专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1997036461A1 DEVICE AND METHOD FOR PLASMA TREATMENT 审中-公开
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：WO1997036461A1
公开(公告)日：1997-10-02
申请号：PCT/JP1997001070
申请日：1997-03-27
申请人： SUMITOMO METAL INDUSTRIES, LTD. , MABUCHI, Hiroshi , HAYAMI, Toshihiro , IDA, Hideo , MURAKAMI, Tomomi , TAKEDA, Naohiko , TSUYUGUCHI, Junya , KATAYAMA, Katsuo
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： H05H01/46
CPC分类号： B05D1/62 , C23C16/4401 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J2237/022
摘要： A device and method for plasma treatment used for etching, ashing, CVD, etc., at the time of manufacturing large scale integrated circuits (LSI) and liquid crystal displays (LCD). The device is a plasma treatment device which generates a plasma by using microwaves introduced through a microwave introducing window and controls the ions in the plasma with a high frequency impressed upon a sample stage and the counter electrode (grounding electrode) opposing to the sample stage is provided at the peripheral edge of the microwave introducing window. In the plasma treatment method, a sample is treated with a plasma by using the plasma treatment device. When the device and method are used, particles or metallic contaminants adhering to the sample are reduced and the manufacturing yield of a semiconductor device, etc., is improved.
摘要翻译：在制造大规模集成电路（LSI）和液晶显示器（LCD）时用于蚀刻，灰化，CVD等的等离子体处理的装置和方法。该装置是通过使用通过微波引入窗口引入的微波产生等离子体的等离子体处理装置，并以施加在样品台上的高频率控制等离子体中的离子，并且与样品台相对的对置电极（接地电极）为设置在微波引入窗口的外围边缘处。在等离子体处理方法中，通过使用等离子体处理装置，用等离子体处理样品。当使用装置和方法时，附着在样品上的颗粒或金属污染物被降低，并且半导体装置等的制造成品率得到改善。

2. 发明申请

WO1997036462A1 DEVICE AND METHOD FOR PLASMA TREATMENT 审中-公开
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：WO1997036462A1
公开(公告)日：1997-10-02
申请号：PCT/JP1997001071
申请日：1997-03-27
申请人： SUMITOMO METAL INDUSTRIES, LTD. , MABUCHI, Hiroshi , TSUYUGUCHI, Junya , KATAYAMA, Katsuo , HAYAMI, Toshihiro , IDA, Hideo , MURAKAMI, Tomomi , TAKEDA, Naohiko
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： H05H01/46
CPC分类号： B05D1/62 , C23C16/4401 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J2237/022
摘要： A device and method used for etching, ashing, CVD, etc., at the time of manufacturing large scale integrated circuits (LSI) and liquid crystal displays (LCD). The device is a plasma treatment device provided with a dielectric plate for microwave waveguide, a microwave introducing window counterposed to the dielectric plate, and a reaction vessel in which a sample stage is so positioned that the table faces to the microwave introducing window. The device has a recessed section in the area of the microwave introducing window facing the sample stage. In the method, a sample is treated with a plasma by using the plasma treatment device. The plasma density in the area facing the sample and the treating speed of the sample with the plasma are increased. When etching a fine hole pattern, the pattern missing is improved. Therefore, a semiconductor device having a fine pattern can be manufactured and, at the same time, the manufacturing yield of the device, etc., is improved.
摘要翻译：在制造大规模集成电路（LSI）和液晶显示器（LCD）时用于蚀刻，灰化，CVD等的器件和方法。该装置是设置有用于微波波导的电介质板，与电介质板对置的微波导入窗口的等离子体处理装置，以及反应容器，其中样品台被定位成使得台面朝向微波导入窗。该装置在面向样品台的微波引入窗口的区域中具有凹陷部分。在该方法中，通过使用等离子体处理装置用等离子体处理样品。样品面积的等离子体密度和样品与等离子体的处理速度增加。当蚀刻细孔图案时，图案缺失得到改善。因此，可以制造具有精细图案的半导体器件，并且同时提高了器件的制造成品率等。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式