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1. 发明授权

EP0592790B1 Negative photoresist composition 有权
标题翻译：负光致抗蚀剂成分
公开(公告)号：EP0592790B1
公开(公告)日：1998-03-11
申请号：EP93113271.6
申请日：1993-08-19
申请人： SUMITOMO CHEMICAL COMPANY LIMITED
发明人： Ueda, Yuji , Takeyama, Naoki , Ueki, Hiromi , Kusumoto, Takehiro , Nakano, Yuko
IPC分类号： G03F7/004 , G03F7/029 , G03F7/038
CPC分类号： G03F7/038 , G03F7/0045

2. 发明公开

EP0592790A1 Negative photoresist composition 有权
标题翻译： Negativ arbeitende Photoresistzusammensetzung。
公开(公告)号：EP0592790A1
公开(公告)日：1994-04-20
申请号：EP93113271.6
申请日：1993-08-19
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Ueda, Yuji , Takeyama, Naoki , Ueki, Hiromi , Kusumoto, Takehiro , Nakano, Yuko
IPC分类号： G03F7/004 , G03F7/029 , G03F7/038
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative photoresist composition suitable for use in far ultraviolet lithographies and particularly KrF excimer laser lithography, excellent in properties such as resolution, sensitivity, film thickness retention, profile, heat resistance, etc., and small in standing wave, which comprises a resin obtainable through a copolymerization of p-hydroxystyrene and styrene, a crosslinking agent, which is a melamine derivative, represented by the general formula (II):

wherein Z represents -NRR' and the like and R, R' and R₁ to R₄ each represents -CH₂OR a and the like in which R a is lower alkyl group, and a photo-induced acid precursor represented by the general formula (III):

wherein Y₃ to Y₅ each represents mono-, di- or tri-halogen-substituted alkyl group or the like.
摘要翻译：适用于远紫外光刻，特别是KrF准分子激光光刻的负性光致抗蚀剂组合物，其特性如分辨率，灵敏度，膜厚保持性，轮廓，耐热性等优异，驻波小，包括可获得的树脂通过对羟基苯乙烯和苯乙烯的共聚合，由通式（II）表示的三聚氰胺衍生物的交联剂：其中Z表示-NRR'等，且R，R'和R 1至R 4表示的各自表示其中R a为低级烷基的-CH 2 OR a等，和由通式（III）表示的光诱导酸前体：其中Y 3〜Y 5各自表示一，二或三 - 取代的烷基等。

3. 发明授权

EP0589451B1 Photoresist Compositiom 失效
标题翻译：光刻胶组合
公开(公告)号：EP0589451B1
公开(公告)日：1998-12-02
申请号：EP93115350.6
申请日：1993-09-23
申请人： Sumitomo Chemical Company, Limited
发明人： Kusumoto, Takehiro , Takeyama, Naoki , Ueda, Yuji , Ueki, Hiromi , Nakano, Yuko
IPC分类号： G03F7/004
CPC分类号： G03F7/0045

4. 发明授权

EP0588092B1 Negtive photoresist composition 失效转让
标题翻译：负光致抗蚀剂成分
公开(公告)号：EP0588092B1
公开(公告)日：1996-03-27
申请号：EP93113272.4
申请日：1993-08-19
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Ueda, Yuji , Takeyama, Naoki , Ueki, Hiromi , Kusumoto, Takehiro , Nakano, Yuko
IPC分类号： G03F7/038 , G03F7/004 , G03F7/029
CPC分类号： G03F7/038 , G03F7/0045

5. 发明公开

EP0588092A3 Negtive photoresist composition 失效转让
公开(公告)号：EP0588092A3
公开(公告)日：1994-05-04
申请号：EP93113272.4
申请日：1993-08-19
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Ueda, Yuji , Takeyama, Naoki , Ueki, Hiromi , Kusumoto, Takehiro , Nakano, Yuko
IPC分类号： G03F7/038 , G03F7/004 , G03F7/029
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative photoresist composition comprising an alkali-soluble resin containing a mixture of Resin A obtainable through a copolymerization of p-hydroxystyrene and styrene and Resin B obtainable through a hydrogenation of poly(p-hydroxystyrene), a photo-induced acid precursor and a crosslinking agent. This negative photoresist composition is suitable for use in far ultraviolet (particularly KrF excimer laser) lithography, excellent in various properties such as resolution, sensitivity, film thickness retention, profile, heat resistance, etc., and small in standing wave.

6. 发明授权

EP0632327B1 Photoresist composition 失效
标题翻译：光刻胶组合物
公开(公告)号：EP0632327B1
公开(公告)日：2000-09-06
申请号：EP94108468.3
申请日：1994-06-01
申请人： SUMITOMO CHEMICAL COMPANY LIMITED
发明人： Nakano, Yuko , Takeyama, Naoki , Ueda, Yuji , Kusumoto, Takehiro , Oka, Hiromi
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/121 , Y10S430/122 , Y10S430/125

7. 发明公开

EP0588092A2 Negtive photoresist composition 失效转让
标题翻译：负性光刻胶组合物
公开(公告)号：EP0588092A2
公开(公告)日：1994-03-23
申请号：EP93113272.4
申请日：1993-08-19
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Ueda, Yuji , Takeyama, Naoki , Ueki, Hiromi , Kusumoto, Takehiro , Nakano, Yuko
IPC分类号： G03F7/038 , G03F7/004 , G03F7/029
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative photoresist composition comprising an alkali-soluble resin containing a mixture of Resin A obtainable through a copolymerization of p-hydroxystyrene and styrene and Resin B obtainable through a hydrogenation of poly(p-hydroxystyrene), a photo-induced acid precursor and a crosslinking agent. This negative photoresist composition is suitable for use in far ultraviolet (particularly KrF excimer laser) lithography, excellent in various properties such as resolution, sensitivity, film thickness retention, profile, heat resistance, etc., and small in standing wave.
摘要翻译：一种负型光致抗蚀剂组合物，其包含含有通过对羟基苯乙烯和苯乙烯的共聚合可获得的树脂A与可通过氢化聚（对羟基苯乙烯），光致酸前体和交联获得的树脂B的混合物的碱溶性树脂剂。这种负型光刻胶组合物适用于远紫外（尤其是KrF准分子激光）光刻，在各种性能如分辨率，灵敏度，膜厚保持率，轮廓，耐热性等方面都很出色，驻波很小。

8. 发明授权

EP0607899B1 Positive photoresist composition 失效
标题翻译：所述的正性光刻胶组合物
公开(公告)号：EP0607899B1
公开(公告)日：2000-06-14
申请号：EP94100582.9
申请日：1994-01-17
申请人： SUMITOMO CHEMICAL COMPANY LIMITED
发明人： Takeyama, Naoki , Ueki, Hiromi , Ueda, Yuji , Kusumoto, Takehiro , Nakano, Yuko
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111

9. 发明公开

EP0607899A2 Positive photoresist composition 失效
标题翻译：阳光照射光。
公开(公告)号：EP0607899A2
公开(公告)日：1994-07-27
申请号：EP94100582.9
申请日：1994-01-17
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Takeyama, Naoki , Ueki, Hiromi , Ueda, Yuji , Kusumoto, Takehiro , Nakano, Yuko
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： The present invention provides a positive photoresist composition comprising an alkali-soluble resin containing a copolymer of p-vinylphenol or a derivative thereof and styrene, a dissolution inhibitor and a photo-induced acid precursor. This positive photoresist composition exhibits excellent sensitivity and resolution while maintaining excellence in other properties such as heat resistance, film thickness retention, adhesion and profile, in the far ultraviolet ray lithography.
摘要翻译：本发明提供一种正型光致抗蚀剂组合物，其包含含有对乙烯基苯酚或其衍生物与苯乙烯的共聚物的碱溶性树脂，溶解抑制剂和光诱导的酸前体。这种正性光致抗蚀剂组合物在远紫外线光刻中表现出优异的灵敏度和分辨率，同时保持了其它性能如耐热性，膜厚保持性，粘合性和轮廓的卓越性。

10. 发明公开

EP0589451A2 Photoresist Compositiom 失效
标题翻译： Fotoresist-Zusammensetzungen。
公开(公告)号：EP0589451A2
公开(公告)日：1994-03-30
申请号：EP93115350.6
申请日：1993-09-23
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Kusumoto, Takehiro , Takeyama, Naoki , Ueda, Yuji , Ueki, Hiromi , Nakano, Yuko
IPC分类号： G03F7/004
CPC分类号： G03F7/0045
摘要： A negative photoresist composition comprising an alkali-soluble resin, a crosslinking agent and a photo-induced acid precursor, wherein said photo-induced acid precursor comprises at least one sulfonic acid ester represented by the following formula (I); and a positive photoresist composition comprising an alkali-soluble resin, a dissolution inhibitor and a photo-induced acid precursor, wherein said photo-induced acid precursor comprises at least one sulfonic acid ester represented by the following formula (I):
wherein R 1 represents an optionally substituted arylene, alkylene or alkenylene group; and R 2 represents an optionally substituted alkyl or aryl group, provided that when R 2 is an alkyl or aryl group having a substituent, said substituent cannot be a fluorine atom.
Said negative and positive photoresist compositions are excellent in properties such as heat resistance, film thickness retention, coating characteristics, profile, etc. and, in addition, exhibit excellent sensitivity and resolution when used in the exposure light region using a far ultraviolet ray, including excimer laser, as a light source.
摘要翻译：包含碱溶性树脂，交联剂和光诱导酸前体的负性光致抗蚀剂组合物，其中所述光致酸性前体包含至少一种由下式（I）表示的磺酸酯; 以及包含碱溶性树脂，溶解抑制剂和光诱导酸前体的正性光致抗蚀剂组合物，其中所述光致酸性前体包含至少一种由下式（I）表示的磺酸酯：其中 R 1表示任选取代的亚芳基，亚烷基或亚烯基; 并且R 2表示任选取代的烷基或芳基，条件是当R 2为具有取代基的烷基或芳基时，所述取代基不能为氟原子。所述负极性和正性光致抗蚀剂组合物的耐热性，膜厚保持性，涂布特性，轮廓等性质优异，另外在使用远紫外线的曝光用光区域使用时，具有优异的灵敏度和分辨率，包括准分子激光，作为光源。

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