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    • 3. 发明公开
    • Negative photoresist composition
    • Negativ arbeitende Photoresistzusammensetzung。
    • EP0592790A1
    • 1994-04-20
    • EP93113271.6
    • 1993-08-19
    • SUMITOMO CHEMICAL COMPANY, LIMITED
    • Ueda, YujiTakeyama, NaokiUeki, HiromiKusumoto, TakehiroNakano, Yuko
    • G03F7/004G03F7/029G03F7/038
    • G03F7/038G03F7/0045
    • A negative photoresist composition suitable for use in far ultraviolet lithographies and particularly KrF excimer laser lithography, excellent in properties such as resolution, sensitivity, film thickness retention, profile, heat resistance, etc., and small in standing wave, which comprises a resin obtainable through a copolymerization of p-hydroxystyrene and styrene, a crosslinking agent, which is a melamine derivative, represented by the general formula (II):

      wherein Z represents -NRR' and the like and R, R' and R₁ to R₄ each represents -CH₂OR a and the like in which R a is lower alkyl group, and a photo-induced acid precursor represented by the general formula (III):

      wherein Y₃ to Y₅ each represents mono-, di- or tri-halogen-substituted alkyl group or the like.
    • 适用于远紫外光刻,特别是KrF准分子激光光刻的负性光致抗蚀剂组合物,其特性如分辨率,灵敏度,膜厚保持性,轮廓,耐热性等优异,驻波小,包括可获得的树脂 通过对羟基苯乙烯和苯乙烯的共聚合,由通式(II)表示的三聚氰胺衍生物的交联剂:其中Z表示-NRR'等,且R,R'和R 1至R 4表示的 各自表示其中R a为低级烷基的-CH 2 OR a等,和由通式(III)表示的光诱导酸前体:其中Y 3〜Y 5各自表示一,二或三 - 取代的烷基等。