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1. 发明申请

WO2012039555A3 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：晶片级发光二极管封装及其制造方法
公开(公告)号：WO2012039555A3
公开(公告)日：2012-06-28
申请号：PCT/KR2011006544
申请日：2011-09-05
申请人： SEOUL SEMICONDUCTOR CO LTD , SEO WON CHEOL , KAL DAE SUNG
发明人： SEO WON CHEOL , KAL DAE SUNG
IPC分类号： H01L33/44 , H01L33/02 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/20 , H01L33/387 , H01L33/46 , H01L33/505 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
摘要翻译：本发明的示例性实施例提供了一种晶片级发光二极管（LED）封装及其制造方法。该LED封装包括：半导体堆叠，其包括第一导电类型半导体层，有源层和第二导电类型半导体层; 布置在所述第二导电类型半导体层和所述有源层中的多个接触孔，所述接触孔暴露所述第一导电类型半导体层; 第一凸块，布置在所述半导体堆叠的第一侧上，所述第一凸块经由所述多个接触孔电连接到所述第一导电型半导体层; 布置在所述半导体堆叠的所述第一侧上的第二凸块，所述第二凸块电连接到所述第二导电类型半导体层; 以及覆盖半导体堆叠的侧壁的保护绝缘层。

2. 发明申请

WO2012165819A3 LIGHT EMITTING DIODE ASSEMBLY 审中-公开
标题翻译：发光二极管组件
公开(公告)号：WO2012165819A3
公开(公告)日：2013-03-28
申请号：PCT/KR2012004180
申请日：2012-05-25
申请人： SEOUL SEMICONDUCTOR CO LTD , LEE CHUNG HOON , KAL DAE SUNG , SEO WON CHEOL , YANG YOUNG EUN
发明人： LEE CHUNG HOON , KAL DAE SUNG , SEO WON CHEOL , YANG YOUNG EUN
IPC分类号： H01L33/64 , H01L33/48
CPC分类号： H01L33/64 , F21K9/23 , H01L25/0753 , H01L27/15 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a light emitting diode assembly. The light emitting diode assembly comprises: a red light emitting diode chip; a short-wavelength light emitting diode chip for emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short-wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat-dispersion performance relatively superior to that of the first heat-dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operating time of same.
摘要翻译：公开了一种发光二极管组件。发光二极管组件包括：红色发光二极管芯片; 短波长发光二极管芯片，用于发射波长比从红色发光二极管芯片发射的光的波长相对更短的波长的光; 用于分散在短波长发光二极管芯片中产生的大部分热量的第一散热构件; 以及用于分散红色发光二极管芯片中产生的大部分热量的第二散热构件。此外，第二散热构件具有比第一散热构件相对更高的散热性能。因此，可以防止从红色发光二极管芯片发射的红光中的光谱运动，以防止在相同操作时间期间的颜色坐标变换。

3. 发明申请

WO2010114250A3 LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有发光细胞的多重性的发光装置及其制造方法
公开(公告)号：WO2010114250A3
公开(公告)日：2010-11-25
申请号：PCT/KR2010001804
申请日：2010-03-24
申请人： SEOUL SEMICONDUCTOR CO LTD , SEO WON CHEOL , KAL DAE SUNG , LEE JOON HEE , KIM CHANG YOUN
发明人： SEO WON CHEOL , KAL DAE SUNG , LEE JOON HEE , KIM CHANG YOUN
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/641 , H01L2224/73265 , H01L2224/92247 , H01L2933/0016
摘要： A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.
摘要翻译：公开了一种具有多个发光单元的发光器件。发光器件包括衬底; 位于所述基板上的多个发光单元彼此间隔开，每个所述发光单元包括p型下半导体层，有源层和n型上半导体层; p电极被定位成在衬底和发光单元之间彼此间隔开，各个p电极电连接到相应的下半导体层，每个p电极具有延伸到相邻的一个发光单元; 设置在各个发光单元的上表面上的n电极，其中与每个发光单元电接触的每个n电极的接触表面存在于将所述发光单元平分在所述发光单元的中心的任何直线的两侧发光单元的上表面; 用于覆盖所述发光单元的侧面的侧绝缘层; 以及用于连接p电极和n电极的电线，电线通过侧绝缘层与发光单元的侧面间隔开。

4. 发明申请

WO2011129548A3 SUBSTRATE ASSEMBLY FOR CRYSTAL GROWTH AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：用于使用其的发光装置的晶体生长和制造方法的基板组件
公开(公告)号：WO2011129548A3
公开(公告)日：2012-03-01
申请号：PCT/KR2011002454
申请日：2011-04-07
申请人： SEOUL OPTO DEVICE CO LTD , LEE CHUNG HOON , YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL
发明人： LEE CHUNG HOON , YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL
IPC分类号： H01L33/12 , H01L33/02
CPC分类号： H01L33/0079 , Y10T428/24942
摘要： A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.
摘要翻译：公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

5. 发明申请

WO2010050694A3 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2010050694A3
公开(公告)日：2010-07-15
申请号：PCT/KR2009006120
申请日：2009-10-22
申请人： SEOUL OPTO DEVICE CO LTD , LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
发明人： LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , SEO WON CHEOL , YE KYUNG HEE , YOON YEO JIN
IPC分类号： H01L33/08
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： Disclosed is a light emitting diode having a plurality of light emitting cells. The light emitting diode comprises half-wave light emitting units each of which has at least one light emitting cell and a first and a second terminal, and full-wave light emitting units each of which has at least one light emitting cell and a third terminal and a fourth terminal. The third terminals of the full-wave light emitting units are electrically and commonly connected to the second terminals of two half-wave light emitting units, and the fourth terminals of the full-wave light emitting units are electrically and commonly connected to the first terminals of another two half-wave light emitting units. Further, one of the half-wave light emitting units is connected in series between the third terminal of one of said two full-wave light emitting units disposed adjacent to each other and the fourth terminal of the other of the two full-wave light emitting units. Another half-wave light emitting unit is connected in series between the fourth terminal of one of said two full-wave light emitting units and the third terminal of the other of the two-full wave light emitting units. Whereby, the efficiency of using light emitting cells can be improved, and a light emitting diode which is stable to reverse voltage can be obtained.
摘要翻译：公开了具有多个发光单元的发光二极管。发光二极管包括半波发光单元，每个发光单元具有至少一个发光单元和第一和第二端子，全波发光单元各自具有至少一个发光单元和第三端子和第四终端。全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且全波发光单元的第四端子电连接到第一端子的另外两个半波发光单元。此外，半波发光单元中的一个串联连接在彼此相邻布置的所述两个全波发光单元中的一个的第三端子和两个全波发光区域中的另一个的第四端子单位。另一个半波发光单元串联连接在所述两个全波发光单元之一的第四端与两全波发光单元中另一个的第三端之间。由此，可以提高使用发光单元的效率，可以获得对反向电压稳定的发光二极管。

6. 发明申请

WO2011115361A3 LIGHT-EMITTING DEVICE HAVING A PLURALITY OF LIGHT-EMITTING CELLS 审中-公开
标题翻译：具有多个发光细胞的发光器件
公开(公告)号：WO2011115361A3
公开(公告)日：2011-11-10
申请号：PCT/KR2011000213
申请日：2011-01-12
申请人： SEOUL OPTO DEVICE CO LTD , YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL , YANG YOUNG EUN , LEE SUM GEUN
发明人： YE KYUNG HEE , KAL DAE SUNG , SEO WON CHEOL , YANG YOUNG EUN , LEE SUM GEUN
IPC分类号： H01L33/08 , H05B37/02
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H05B33/0821 , H01L2924/00
摘要： The light-emitting device according to the present invention comprises: at least three pairs of half-wave light-emitting units comprising half-wave light-emitting units in pairs in which terminals of the same polarity are electrically connected together, arranged in such a way that the terminals of the same polarity that are electrically connected together in any one pair have the opposite polarity to terminals of the same polarity that are electrically connected together in any other pair to which the first pair is adjacent; and full-wave light-emitting units electrically connected to two adjacent pairs of half-wave light-emitting units, wherein each of the half-wave light-emitting units and each of the full-wave light-emitting units has at least one light-emitting cell, and each of the terminals of the full-wave light-emitting units is respectively electrically connected to the terminals of the same polarity that are electrically connected together in the half-wave light-emitting units.
摘要翻译：根据本发明的发光器件包括：至少三对半波发光单元，它们成对地包括半波发光单元，其中相同极性的端子电连接在一起，以这样的方式布置使得在任何一对中电连接在一起的相同极性的端子具有与在第一对所邻接的任何其他对中的电连接在一起的相同极性的端子相反的极性; 以及全波发光单元，电性连接至相邻的两对半波发光单元，其中每一半波发光单元及每一全波发光单元具有至少一光源发射单元，并且全波发光单元的每个端子分别电连接到在半波发光单元中电连接在一起的相同极性的端子。

7. 发明申请

WO2010093190A2 LED CHIP FOR HIGH VOLTAGE OPERATION AND LED PACKAGE INCLUDING THE SAME 审中-公开
标题翻译：用于高电压操作的LED芯片和包括其的LED封装
公开(公告)号：WO2010093190A2
公开(公告)日：2010-08-19
申请号：PCT/KR2010000892
申请日：2010-02-12
申请人： SEOUL SEMICONDUCTOR CO LTD , LEE CHUNG HOON , SEO WON CHEOL , YOON YEO JIN , SHIN JIN CHEOL
发明人： LEE CHUNG HOON , SEO WON CHEOL , YOON YEO JIN , SHIN JIN CHEOL
IPC分类号： H01L33/16 , H01L33/02
CPC分类号： H01L27/153 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H05B33/0821 , H01L2924/00014
摘要： A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m=n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is defined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2 x (n/m) is not more than 2V.
摘要翻译：公开了一种用于高电压操作的发光二极管（LED）芯片和包括其的LED封装。 LED芯片包括基板，形成在基板上并包括串联连接的n个发光单元的第一阵列和形成在基板上并包括串联连接的m（m = n）个发光单元的第二阵列。在LED芯片的操作期间，第一阵列和第二阵列通过彼此反向并联连接来操作。此外，当将第一阵列的驱动电压定义为Vd1，将第二阵列的驱动电压定义为Vd2时，Vd1与Vd2之间的差（n / m）不大于2V。

8. 发明申请

WO2012118303A1 LIGHT-EMITTING DIODE CHIP 审中-公开
标题翻译：发光二极管芯片
公开(公告)号：WO2012118303A1
公开(公告)日：2012-09-07
申请号：PCT/KR2012001435
申请日：2012-02-24
申请人： SEOUL OPTO DEVICE CO LTD , LEE KYU HO , SUH DAE WOONG , SEO WON CHEOL , KIM CHANG HOON , LEE SUNG HYUN , IN CHI HYUN
发明人： LEE KYU HO , SUH DAE WOONG , SEO WON CHEOL , KIM CHANG HOON , LEE SUNG HYUN , IN CHI HYUN
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/483 , H01L33/0095 , H01L33/22
摘要： The present invention relates to a light-emitting diode chip. According to the present invention, the light-emitting diode chip comprises: a substrate, the thickness of which is greater than 120 µm; and a light-emitting diode provided on the surface of the substrate, at one side thereof.
摘要翻译：发光二极管芯片技术领域本发明涉及发光二极管芯片。根据本发明，发光二极管芯片包括：厚度大于120μm的衬底; 以及设置在基板表面上的发光二极管的一侧。

9. 发明申请

WO2012044011A3 WAFER LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：水平发光二极管封装及其制造方法
公开(公告)号：WO2012044011A3
公开(公告)日：2012-06-07
申请号：PCT/KR2011007028
申请日：2011-09-23
申请人： SEOUL OPTO DEVICE CO LTD , SEO WON CHEOL
发明人： SEO WON CHEOL
IPC分类号： H01L33/48 , H01L33/50
CPC分类号： H01L33/486 , H01L24/97 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2224/16 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2924/181 , H01L2924/00
摘要： An exemplary embodiment of the present invention discloses a wafer level light emitting diode package that includes a first substrate having an insulating-reflecting layer and an electrode pattern arranged on a surface of the first substrate, and a conductive via, a terminal on which the first substrate is arranged, a second substrate arranged on the first substrate, the second substrate including a cavity-forming opening, the cavity-forming opening exposing the electrode pattern, and a light-emitting chip arranged on the electrode pattern. The light-emitting chip is a flip-bonded light-emitting structure without a chip substrate, and the conductive via electrically connects the electrode pattern and the terminal.
摘要翻译：本发明的一个示例性实施例公开了一种晶片级发光二极管封装，其包括具有绝缘反射层和布置在第一衬底的表面上的电极图案的第一衬底和导电通孔，衬底布置，布置在第一衬底上的第二衬底，第二衬底包括腔形成开口，暴露电极图案的腔形成开口和布置在电极图案上的发光芯片。发光芯片是没有芯片衬底的触发式发光结构，导电通孔电连接电极图案和端子。

10. 发明申请

WO2009084857A3 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2009084857A3
公开(公告)日：2009-10-08
申请号：PCT/KR2008007658
申请日：2008-12-24
申请人： SEOUL OPTO DEVICE CO LTD , SEO WON CHEOL , KIM CHANG YOUN , YOON YEO JIN
发明人： SEO WON CHEOL , KIM CHANG YOUN , YOON YEO JIN
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L2224/73265
摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers includes an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
摘要翻译：这里公开了一种发光二极管。发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。在牺牲基板上生长半导体层，并且支撑基板与牺牲基板均匀。

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