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1. 发明公开

EP2108118A1 VIDEO RATE-ENABLING PROBES FOR ATOMIC FORCE MICROSCOPY 审中-公开
标题翻译：探头用于启用视频速率核电观察
公开(公告)号：EP2108118A1
公开(公告)日：2009-10-14
申请号：EP08725061.9
申请日：2008-01-31
申请人： Lee, Chung Hoon
发明人： The designation of the inventor has not yet been filed
IPC分类号： G01N23/00
CPC分类号： G01Q70/10 , G01N23/00 , G01Q60/38 , G01Q70/14 , G01Q70/16
摘要： Method for producing a probe for atomic force microscopy with a silicon nitride cantilever and an integrated single crystal silicon tetrahedral tip with high resonant frequencies and low spring constants intended for high speed AFM imaging.

2. 发明专利

DE102010010211A1 Lichtemittierende Vorrichtung 未知
公开(公告)号：DE102010010211A1
公开(公告)日：2010-12-09
申请号：DE102010010211
申请日：2010-03-04
申请人： KAL DAE SUNG , KIM DAE WON , LEE CHUNG HOON , NAM KI BUM
发明人： KAL DAE SUNG , KIM DAE WON , LEE CHUNG HOON , NAM KI BUM
IPC分类号： H01L33/06 , H01S5/34

3. 发明公开

EP2108118A4 VIDEO RATE-ENABLING PROBES FOR ATOMIC FORCE MICROSCOPY 审中-公开
标题翻译：探头用于启用视频速率核电观察
公开(公告)号：EP2108118A4
公开(公告)日：2012-09-19
申请号：EP08725061
申请日：2008-01-31
申请人： LEE CHUNG HOON
IPC分类号： G01N23/00
CPC分类号： G01Q70/10 , G01N23/00 , G01Q60/38 , G01Q70/14 , G01Q70/16

4. 发明公开

EP2226854A1 Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：EP2226854A1
公开(公告)日：2010-09-08
申请号：EP09010817.6
申请日：2009-08-24
申请人： Lee, Chung Hoon , Kim, Dae Won , Kal, Dae Sung , Nam, Ki Bum
发明人： Lee, Chung Hoon , Kim, Dae Won , Kal, Dae Sung , Nam, Ki Bum
IPC分类号： H01L33/08 , H01L33/32 , H01L33/06 , H01S5/343 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate (11), a first semiconductor layer (15) on the substrate (11), a second semiconductor layer (19) on the first semiconductor layer (15), and a multi-quantum well structure (17) including at least one well layer (17b) and at least one barrier layer (17a) between the first and second semiconductor layers. A carrier trap portion (27) is formed in at least one layer within the multi-quantum well structure (17). The carrier trap portion (27) has a band-gap energy that gradually decreases from a periphery of the carrier trap portion to a center thereof.
摘要翻译：发光器件可以用于发光二极管和激光二极管。该发光器件包括衬底（11），衬底（11）上的第一半导体层（15），第一半导体层（15）上的第二半导体层（19）以及多量子阱结构（17））包括至少一个阱层（17b）和位于第一和第二半导体层之间的至少一个阻挡层（17a）。载流子捕获部分（27）形成在多量子阱结构（17）内的至少一个层中。载流子收集部分（27）具有从载流子收集部分的外围向其中心逐渐减小的带隙能量。

5. 发明专利

TWI473296B 發光裝置有权
简体标题：发光设备
公开(公告)号：TWI473296B
公开(公告)日：2015-02-11
申请号：TW098120243
申请日：2009-06-17
申请人：李貞勳 , LEE, CHUNG-HOON , 金大原 , KIM, DAE-WON , 葛大成 , KAL, DAE-SUNG , 南基範 , NAM, KI-BUM
发明人：李貞勳 , LEE, CHUNG-HOON , 金大原 , KIM, DAE-WON , 葛大成 , KAL, DAE-SUNG , 南基範 , NAM, KI-BUM
IPC分类号： H01L33/06 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412

6. 发明授权

KR100931483B1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：KR100931483B1
公开(公告)日：2009-12-11
申请号：KR20090053181
申请日：2009-06-16
申请人： LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , NAM KI BUM
发明人： LEE CHUNG HOON , KIM DAE WON , KAL DAE SUNG , NAM KI BUM
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： PURPOSE: A light emitting device is provided to solve a problem that quantum efficiency is degraded due to a crystal defect by including a carrier trap portion in at least one layer. CONSTITUTION: In a light emitting device, a first semiconductor layer(15) is formed on a substrate(11). A buffer layer(13) is arranged between the substrate and the semiconductor layer. A second semiconductor layer(19) is formed on the semiconductor layer. A multi quantum well structure includes at least one barrier(17a) and well layer(17b) which is between the first semiconductor layer and the second semiconductor layer. A bend gap energy is decreased from the outer of the carrier trap to the center of it. The carrier trap is buried into inside of the well.
摘要翻译：目的：提供一种发光器件，用于通过在至少一层中包含载流子捕获部分来解决量子效率由于晶体缺陷而劣化的问题。构成：在发光器件中，在基板（11）上形成第一半导体层（15）。在衬底和半导体层之间布置缓冲层（13）。在半导体层上形成第二半导体层（19）。多量子阱结构包括位于第一半导体层和第二半导体层之间的至少一个势垒（17a）和阱层（17b）。弯曲间隙能量从载体陷阱的外部减小到其中心。载体陷阱埋在井内。

7. 发明申请

WO2012102501A2 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THEREOF 审中-公开
标题翻译：晶片级发光二极管封装及其制造方法
公开(公告)号：WO2012102501A2
公开(公告)日：2012-08-02
申请号：PCT/KR2012000314
申请日：2012-01-13
申请人： SEOUL OPTO DEVICE CO LTD , SUH DAE WOONG , LEE CHUNG HOON
发明人： SUH DAE WOONG , LEE CHUNG HOON
IPC分类号： H01L33/48 , H01L21/78 , H01L33/36
CPC分类号： H01L33/44 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a wafer-level light emitting diode package and a method for manufacturing thereof. The method comprises the following steps: forming a plurality of semiconductor laminated structures on a first substrate; preparing second substrate first lead electrodes and second lead electrodes which are arranged to correspond to a plurality of semiconductor laminated structures; coupling a plurality of semiconductor laminated structures to the second substrate; and partitioning the first and the second substrates to a plurality of packages after coupling the substrates. Therefore, the wafer-level light emitting diode package is provided.
摘要翻译：公开了一种晶片级发光二极管封装及其制造方法。该方法包括以下步骤：在第一衬底上形成多个半导体层叠结构; 制备布置成对应于多个半导体层压结构的第二衬底第一引线电极和第二引线电极; 将多个半导体叠层结构耦合到所述第二衬底; 以及在耦合基板之后将第一基板和第二基板分隔成多个封装。因此，提供了晶圆级发光二极管封装。

8. 发明申请

WO2009028818A2 LIGHT EMITTING DEVICE EMPLOYING NON-STOICHIOMETRIC TETRAGONAL ALKALINE EARTH SILICATE PHOSPHORS 审中-公开
标题翻译：使用非化学计量比例的四硼酸碱土硅酸盐磷光体的发光装置
公开(公告)号：WO2009028818A2
公开(公告)日：2009-03-05
申请号：PCT/KR2008/004734
申请日：2008-08-14
申请人： SEOUL SEMICONDUCTOR CO., LTD. , LEE, Chung Hoon , TEWS, Walter , ROTH, Gundula , TEWS, Stefan
发明人： LEE, Chung Hoon , TEWS, Walter , ROTH, Gundula , TEWS, Stefan
IPC分类号： H01L33/00
CPC分类号： C09K11/7734 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/19107 , H05B33/14 , H01L2924/00014
摘要： Disclosed is a light emitting device employing non- stoichiometric tetragonal Alkaline Earth Silicate phosphors. The light emitting device comprises a light emitting diode emitting light of ultraviolet or visible light, and non-stoichiometric luminescent material disposed around the light emitting diode. The luminescent material adsorbs at least a portion of the light emitted from the light emitting diode and emits light having a different wavelength from the absorbed light. The non-stoichiometric luminescent material has tetragonal crystal structure, and contains more silicon in the crystal lattice than that in the crystal lattice of silicate phosphors having stoichiometric crystal structure. The luminescent material is represented as the formula (Ba u Sr v Ca w Cu x ) 3-y (Zn,Mg,Mn) z Si 1+b 0 5+2b :Eu a . Light emitting devices having improved temperature and humidity stability can be provided by employing the non-stoichiometric tetragonal Alkaline Earth Silicate phosphors.
摘要翻译：公开了采用非化学计量的四方碱土硅酸盐磷光体的发光器件。该发光装置包括发射紫外或可见光的发光二极管和设置在发光二极管周围的非化学计量的发光材料。发光材料吸收从发光二极管发射的光的至少一部分并且发射具有与吸收的光不同的波长的光。非化学计量的发光材料具有四方晶体结构，并且晶格中的硅比具有化学计量晶体结构的硅酸盐磷光体的晶格中的硅多。该发光材料由下式表示（Ba u Sr （锌，镁，锰）<子>ž的Si <子> 1 + b 0 <子> 5 + 2b中：Eu的<子>一< /子>。具有改进的温度和湿度稳定性的发光器件可以通过采用非化学计量的四方碱土硅酸盐磷光体来提供。

9. 发明申请

WO2008094688A9 VIDEO RATE-ENABLING PROBES FOR ATOMIC FORCE MICROSCOPY 审中-公开
标题翻译：原子力显微镜的视频率启用探针
公开(公告)号：WO2008094688A9
公开(公告)日：2008-12-24
申请号：PCT/US2008001370
申请日：2008-01-31
申请人： LEE CHUNG HOON
IPC分类号： G01N23/00
CPC分类号： G01Q70/10 , G01N23/00 , G01Q60/38 , G01Q70/14 , G01Q70/16
摘要： Method for producing a probe for atomic force microscopy with a silicon nitride cantilever and an integrated single crystal silicon tetrahedral tip with high resonant frequencies and low spring constants intended for high speed AFM imaging.
摘要翻译：一种用于制造具有氮化硅悬臂和用于高速AFM成像的具有高共振频率和低弹簧常数的集成单晶硅四面体尖端的用于原子力显微镜的探针的方法。

10. 发明申请

WO2007069869A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2007069869A1
公开(公告)日：2007-06-21
申请号：PCT/KR2006/005500
申请日：2006-12-15
申请人： SEOUL SEMICONDUCTOR.CO., LTD. , LEE, Chung Hoon , ROTH, Gundula , TEWS, Walter
发明人： LEE, Chung Hoon , ROTH, Gundula , TEWS, Walter
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , C09K11/661 , C09K11/663 , C09K11/7734 , C09K11/7792 , H01L25/0753 , H01L27/15 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H05B33/0803 , H05B33/0809 , H05B33/0821 , H05B33/10 , H05B33/14 , H01L2924/00 , H01L2924/00014
摘要： The present invention relates to a light emitting device comprising at least one light emitting diode which emits light in a predetermined wavelength region, copper- alkaline earth metal based inorganic mixed crystals activated by rare earths, which include copper- alkaline earth silicate phosphors which are disposed around the light emitting diode and absorb a portion of the light emitted from the light emitting diode and to emit light different in wavelength from the absorbed light.
摘要翻译：本发明涉及一种发光装置，其包括发射预定波长区域的光的至少一个发光二极管，由稀土活化的铜 - 碱土金属基无机混合晶体，所述无机混合晶体包括铜碱土金属硅酸盐荧光体围绕发光二极管并吸收从发光二极管发出的一部分光并发射波长与吸收光不同的光。

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