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1. 发明申请

WO2011028076A3 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：WO2011028076A3
公开(公告)日：2011-05-26
申请号：PCT/KR2010006056
申请日：2010-09-07
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE , SON JUN HO , KIM BUEM JOON
发明人： LEE JONG LAM , SONG YANG HEE , SON JUN HO , KIM BUEM JOON
IPC分类号： H01L33/36 , H01L33/38 , H01L33/40
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/32 , H01L33/387
摘要： Provided is: a semiconductor light-emitting element comprising a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer, wherein the nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting element of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained, while the contact layer acts as a diffusion barrier layer and inhibits deterioration due to the heat generated in a nitrogen-atmosphere heat treatment and in high-temperature and high-current injection conditions and hence the thermal stability is outstanding.
摘要翻译：提供：半导体发光元件，包括具有发光结构的半导体层; 以及在所述半导体层上结合有纳米点层，接触层，防扩散层和覆盖层的欧姆电极，其中所述纳米点层形成在所述半导体层的N-极性表面上并且由包含 Ag，Al和Au中的至少一种。还提供了其制造方法。在这种类型的半导体发光元件中，在具有纳米点层/接触层/扩散防止层/盖层的多层结构的欧姆电极中，纳米点层构成氮化物半导体的N极表面并改善了电荷注入特性，使得可以获得优异的欧姆特性，而接触层用作扩散阻挡层并且抑制由于在氮气氛热处理中产生的热量以及在高温和高电流注射条件，因此热稳定性非常好。

2. 发明申请

WO2011065766A3 VERTICAL GALLIUM NITRIDE-BASED LIGHT EMTTTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：立式氮化镓轻触发二极管及其制造方法
公开(公告)号：WO2011065766A3
公开(公告)日：2011-08-25
申请号：PCT/KR2010008403
申请日：2010-11-25
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM
发明人： LEE JONG LAM
IPC分类号： H01L33/16
CPC分类号： H01L33/22 , H01L33/30 , H01L33/305 , H01L33/405 , H01L2933/0083
摘要： The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based pi-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based pi-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based pi-V group compound semiconductor layer on the p-type GaN-based pi-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening.
摘要翻译：本公开提供了一种垂直GaN基半导体二极管及其制造方法。 GaN基p-V族半导体器件包括衬底，衬底上的p型欧姆电极层，p型欧姆电极层上的p型GaN基p-V族化合物半导体层，n 在p型GaN基p-V族化合物半导体层上的n型GaN基p-V族化合物半导体层和n型GaN基IE-V族化合物半导体上的n型欧姆电极层层。 p型欧姆电极层是高反射率为70％以上的Ag系高反射性电极，n型GaN系EV基化合物半导体层的表面经受以下工序中的至少一种：形成光子晶体和表面粗糙化的过程。

3. 发明申请

WO2012020968A3 SEMICONDUCTOR LIGHT EMITTING DIODE HAVING OHMIC ELECTRODE STRUCTURE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有OHMIC电极结构的半导体发光二极管及其制造方法
公开(公告)号：WO2012020968A3
公开(公告)日：2012-05-18
申请号：PCT/KR2011005796
申请日：2011-08-09
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE
发明人： LEE JONG LAM , SONG YANG HEE
IPC分类号： H01L33/36
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Disclosed are a semiconductor light emitting diode having an ohmic electrode structure and a method for manufacturing the same. According to one aspect of the present invention, the semiconductor light emitting diode comprises: a light emitting structure having an upper surface which is in an N-plane; and an ohmic electrode structure positioned on said light emitting structure. Said ohmic electrode structure comprises, from the N-plane of said light emitting structure, a lower diffusion prevention layer, a contact layer, an upper diffusion prevention layer, and an A1 protection layer. By adopting the multilayered ohmic electrode structure that includes the lower diffusion prevention layer / contact layer / upper diffusion prevention layer / A1 protection layer, deterioration of the ohmic contact property on the N-plane semiconductor layer is prevented in such a manner that a semiconductor light emitting diode with excellent thermal stability can be provided.
摘要翻译：公开了具有欧姆电极结构的半导体发光二极管及其制造方法。根据本发明的一个方面，半导体发光二极管包括：发光结构，其上表面处于N平面; 以及位于所述发光结构上的欧姆电极结构。所述欧姆电极结构包括从所述发光结构的N平面的下扩散防止层，接触层，上扩散防止层和A1保护层。通过采用包含下扩散防止层/接触层/上扩散防止层/ A1保护层的多层欧姆电极结构，能够防止在N平面半导体层上的欧姆接触特性的劣化，使得半导体光可以提供具有优异热稳定性的发光二极管。

4. 发明申请

WO2012005459A3 LIGHT-EMITTING DEVICE HAVING AN MGO PYRAMID STRUCTURE AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：具有MGO金字塔结构的发光器件及其制造方法
公开(公告)号：WO2012005459A3
公开(公告)日：2012-05-03
申请号：PCT/KR2011004592
申请日：2011-06-23
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM , SON JUN HO , YU HAK KI
发明人： LEE JONG LAM , SON JUN HO , YU HAK KI
IPC分类号： H01L33/28 , H01L33/22
CPC分类号： H01L33/58 , H01L33/007 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0058
摘要： The present invention relates to a light-emitting device having a gallium nitride-based group III-V compound semiconductor and a manufacturing method for same. The light-emitting device having a gallium nitride-based group III-V compound semiconductor comprises: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index control layers which have refractive indices less than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, and the pyramid structure is formed on the surface of the second refractive index control layer. According to one embodiment of the present invention, the first and second refractive index control layers can be included in the upper portion of the light-emitting device having a gallium nitride-based group III-V compound semiconductor, and the pyramid structure can be formed in the second refractive index control layer, thereby increasing the surface light outputted by one and half times more than that of typical light-emitting diodes.
摘要翻译：本发明涉及具有氮化镓系III-V族化合物半导体的发光装置及其制造方法。具有氮化镓基III-V族化合物半导体的发光器件包括：衬底; 形成在基板上的p型欧姆电极层; 在p型欧姆电极层上形成的p型氮化镓系III-V族化合物半导体层，形成在所述p型氮化镓系III-V族化合物半导体层上的n型氮化镓系III-V族化合物半导体层，在n型氮化镓系III-V族化合物半导体层上形成的n型欧姆电极层，以及折射率小于n型氮化镓系III-V族化合物半导体层和n型欧姆电极层的折射率的第一和第二折射率控制层，并且金字塔结构形成在第二折射率控制层。根据本发明的一个实施例，第一和第二折射率控制层可以被包括在具有氮化镓基III-V族化合物半导体的发光器件的上部，并且可以形成金字塔结构在第二折射率控制层中，由此使输出的表面光增加比典型发光二极管的多1.5倍。

5. 发明申请

WO2011065745A3 LIGHT-EMITTING DIODE PACKAGE 审中-公开
标题翻译：发光二极管封装
公开(公告)号：WO2011065745A3
公开(公告)日：2011-09-15
申请号：PCT/KR2010008353
申请日：2010-11-24
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM , SON JUN HO
发明人： LEE JONG LAM , SON JUN HO
IPC分类号： H01L33/48
CPC分类号： H01L33/486 , H01L33/02 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： Disclosed is a light-emitting diode package, comprising high-output and high-efficiency light-emitting diodes in which the efficiency droop phenomenon, which occurs in response to the injection of high current, is prevented to achieve improved light emission efficiency. The light-emitting diode package is configured such that the surface of a base on which the light-emitting diodes are to be attached is curved by means of a device or a specific structure, and the light-emitting diodes are die-bonded to the curved surface so as to enable the light-emitting diodes to be bent by the curvature of the curved surface. Here, stresses are applied to the light-emitting diodes, thus causing changes in a band structure of a quantum well layer. In the thus-produced light-emitting diode package, efficiency droop, which occurs in response to the injection of high current, is reduced to achieve the high output and high efficiency of the package.
摘要翻译：公开了一种发光二极管封装，其包括高输出和高效率的发光二极管，其中响应于高电流的注入而出现的效率下垂现象被阻止以实现改进的发光效率。发光二极管封装被构造成使得其上要附接发光二极管的基座的表面借助于装置或特定结构弯曲，并且发光二极管被芯片接合到弯曲的表面，以使得发光二极管能够通过曲面的弯曲而弯曲。这里，应力被施加到发光二极管，从而引起量子阱层的能带结构的变化。在这样制造的发光二极管封装中，响应于注入高电流而出现的效率下降被减小以实现封装的高输出和高效率。

6. 发明公开

KR20120005326A Light-emitting device having mgo pyramid structure and method for manufacturing the same 有权
标题翻译：具有MGO PYRAMID结构的发光装置及其制造方法
公开(公告)号：KR20120005326A
公开(公告)日：2012-01-16
申请号：KR20100066021
申请日：2010-07-08
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND
发明人： LEE JONG LAM , SON JUNG HO , YU HAK KI
IPC分类号： H01L33/28 , H01L33/22
CPC分类号： H01L33/58 , H01L33/007 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0058
摘要： PURPOSE: A light emitting device having an MgO pyramid structure and a manufacturing method thereof are provided to improve optical power of a light emitting diode by preventing total reflection which is generated in a semiconductor layer and aeropause of the light emitting diode. CONSTITUTION: A first semiconductor layer is formed on the upper side of a substrate(500). A active layer(230) is placed between the first semiconductor layer and a second semiconductor layer. A refractive index control layer comprises a first refractive index control layer(300) and a second refractive index control layer(400). A refractive index of the first refractive index control layer is smaller than a refractive index of the first semiconductor layer. A refractive index of the second refractive index control layer is smaller than the refractive index of the first refractive index control layer.
摘要翻译：目的：提供具有MgO金字塔结构的发光器件及其制造方法，以通过防止在半导体层中产生的全反射和发光二极管的空气停止来提高发光二极管的光功率。构成：在基板（500）的上侧形成有第一半导体层。有源层（230）被放置在第一半导体层和第二半导体层之间。折射率控制层包括第一折射率控制层（300）和第二折射率控制层（400）。第一折射率控制层的折射率小于第一半导体层的折射率。第二折射率控制层的折射率小于第一折射率控制层的折射率。

7. 发明申请

WO2012046991A3 PATTERNING METHOD OF SEMICONDUCTOR AND SEMICONDUCTOR DEVICE THAT CONTAINS PATTERN FORMED BY PATTERNING METHOD 审中-公开
标题翻译：通过图形化方法形成图形的半导体器件和半导体器件的绘图方法
公开(公告)号：WO2012046991A3
公开(公告)日：2012-06-07
申请号：PCT/KR2011007309
申请日：2011-10-04
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE
发明人： LEE JONG LAM , SONG YANG HEE
IPC分类号： H01L21/027
CPC分类号： H01L21/3086 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The present invention relates to a patterning method of a semiconductor and a semiconductor device that contains a pattern formed by the patterning method. According to the present invention, the patterning method of the semiconductor comprises the steps of: forming a dry etching protective film on a semiconductor; forming a nano-imprint resist film on said dry etching protective film; forming a pattern on said nano-imprint resist film by using a nano-imprint stamper; forming a pattern on said dry etching protective film by using the pattern, which is formed on said nano-imprint resist film; and forming a pattern on said semiconductor by using the pattern, which is formed on said dry etching protective film. According to the present invention, the invention provides a patterning method of a semiconductor and a semiconductor device that contains a pattern formed by the patterning method, wherein patterns can be formed on a large-scale semiconductor without restrictions on depth.
摘要翻译：本发明涉及包含通过图案化方法形成的图案的半导体和半导体器件的图案化方法。根据本发明，半导体的图案化方法包括以下步骤：在半导体上形成干蚀刻保护膜; 在所述干蚀刻保护膜上形成纳米压印抗蚀剂膜; 通过使用纳米压印压模在所述纳米压印抗蚀剂膜上形成图案; 通过使用形成在所述纳米压印抗蚀剂膜上的图案在所述干蚀刻保护膜上形成图案; 以及通过使用形成在所述干蚀刻保护膜上的图案在所述半导体上形成图案。根据本发明，本发明提供一种包含由图案化方法形成的图案的半导体和半导体器件的图案化方法，其中可以在大规模半导体上形成图案，而不受深度限制。

8. 发明申请

WO2012091329A3 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED THEREBY 审中-公开
标题翻译：制造发光器件的方法和由其制造的发光器件
公开(公告)号：WO2012091329A3
公开(公告)日：2012-08-23
申请号：PCT/KR2011009647
申请日：2011-12-15
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE , YOO CHUL JONG
发明人： LEE JONG LAM , SONG YANG HEE , YOO CHUL JONG
IPC分类号： H01L33/22 , H01L33/50
CPC分类号： H01L33/007 , H01L33/06 , H01L33/24 , H01L33/38
摘要： The present invention relates to a light-emitting device having a significantly enhanced light-emitting efficiency, by expanding the coating area of a fluorescent body being coated on a light-emitting diode, and placing the coating location close to an active layer (SQW or MQW). The method for manufacturing a light-emitting device of the present invention comprises a step for forming a concavo-convex portion on one surface of the light-emitting diode by forming the concavo-convex portion on the surface of a substrate, and forming consecutively on the substrate a first semiconductor layer, an active layer, and a second semiconductor layer so that the shape of the concavo-convex portion is maintained; and a step for coating the fluorescent body on the concave portion of the concavo-convex portion formed on the light-emitting diode so as to be inserted thereby.
摘要翻译：本发明涉及一种具有显着增强的发光效率的发光装置，其通过扩大涂覆在发光二极管上的荧光体的涂覆区域并且将涂覆位置放置在靠近有源层（SQW或 MQW）。本发明的发光装置的制造方法包括：通过在基板的表面形成凹凸部，在发光二极管的一个面上形成凹凸部的工序，所述衬底包括第一半导体层，有源层和第二半导体层，从而保持所述凹凸部分的形状; 以及将荧光体涂覆在形成在发光二极管上的凹凸部分的凹入部分以便插入其中的步骤。

9. 发明申请

WO2012091325A3 METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE USING NANO-STRUCTURES AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY 审中-公开
标题翻译：使用纳米结构制造发光二极管及其制造的发光二极管的方法
公开(公告)号：WO2012091325A3
公开(公告)日：2012-08-23
申请号：PCT/KR2011009625
申请日：2011-12-14
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , KIM JONG UK , SON JUN HO
发明人： LEE JONG LAM , KIM JONG UK , SON JUN HO
IPC分类号： H01L33/22
CPC分类号： H01L33/22
摘要： The present invention relates to a method for manufacturing a light-emitting diode having improved light extraction efficiency through dry-etching that utilizes nano-structures, and to a light-emitting diode having excellent light extraction efficiency manufactured through the method. The present invention relates to a method for manufacturing a vertical-type light-emitting diode, which has an active layer and a second semiconductor layer formed on a first semiconductor layer consecutively, the method comprising: (a) a step for coating nano-structures having a sphere shape on the second semiconductor layer; (b) a step for forming a concavo-convex portion on the second semiconductor layer by dry-etching the second semiconductor layer using the nano-structures as a mask; and (c) a step for micro-patterning so that sub-concavo-convex portions are formed on each of the concavo-convex surfaces that make up the concavo-convex portion by wet-etching the concavo-convex portion.
摘要翻译：本发明涉及通过利用纳米结构的干法蚀刻来提高光提取效率的发光二极管的制造方法以及通过该方法制造的具有优异的光提取效率的发光二极管。本发明涉及一种用于制造垂直型发光二极管的方法，所述垂直型发光二极管具有连续形成在第一半导体层上的有源层和第二半导体层，所述方法包括：（a）将纳米结构在所述第二半导体层上具有球形; （b）通过使用纳米结构作为掩模干蚀刻第二半导体层，在第二半导体层上形成凹凸部的步骤; （c）通过对凹凸部进行湿式蚀刻，在构成凹凸部的各凹凸面上形成副凹凸部的微构图工序。

10. 发明公开

KR20100074090A Gan compound semiconductor light emitting element 有权
标题翻译： GAN化合物半导体发光元件
公开(公告)号：KR20100074090A
公开(公告)日：2010-07-01
申请号：KR20100046148
申请日：2010-05-17
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH FOUNDATION
发明人： LEE JONG LAM
IPC分类号： H01L33/36 , H01L33/02
CPC分类号： H01L33/10 , H01L33/38 , H01L33/405 , H01L33/44
摘要： PURPOSE: A GaN based compound semiconductor light emitting device is provided to improve a light output property by increasing the doping on an n-GaN layer. CONSTITUTION: A reflective film is formed on a metal support layer(100). A p-nitride semiconductor layer, an active layer(130) and an n-nitride semiconductor layer are successively formed on the reflective film. An anti-reflective film is formed on an n-nitride semiconductor layer. An n type electrode is provided. An insulation film including an opening is formed on the lower side of a p-nitride semiconductor layer. A reflective film electrode(110) is formed on the lower side of the insulation layer.
摘要翻译：目的：提供GaN基化合物半导体发光器件，以通过增加n-GaN层上的掺杂来改善光输出特性。构成：在金属支撑层（100）上形成反射膜。在反射膜上依次形成氮化钛半导体层，有源层（130）和氮化N-半导体层。在氮化物半导体层上形成抗反射膜。提供n型电极。包含开口的绝缘膜形成在p氮化物半导体层的下侧。反射膜电极（110）形成在绝缘层的下侧。

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