专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012005459A3 LIGHT-EMITTING DEVICE HAVING AN MGO PYRAMID STRUCTURE AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：具有MGO金字塔结构的发光器件及其制造方法
公开(公告)号：WO2012005459A3
公开(公告)日：2012-05-03
申请号：PCT/KR2011004592
申请日：2011-06-23
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND , LEE JONG LAM , SON JUN HO , YU HAK KI
发明人： LEE JONG LAM , SON JUN HO , YU HAK KI
IPC分类号： H01L33/28 , H01L33/22
CPC分类号： H01L33/58 , H01L33/007 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0058
摘要： The present invention relates to a light-emitting device having a gallium nitride-based group III-V compound semiconductor and a manufacturing method for same. The light-emitting device having a gallium nitride-based group III-V compound semiconductor comprises: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index control layers which have refractive indices less than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, and the pyramid structure is formed on the surface of the second refractive index control layer. According to one embodiment of the present invention, the first and second refractive index control layers can be included in the upper portion of the light-emitting device having a gallium nitride-based group III-V compound semiconductor, and the pyramid structure can be formed in the second refractive index control layer, thereby increasing the surface light outputted by one and half times more than that of typical light-emitting diodes.
摘要翻译：本发明涉及具有氮化镓系III-V族化合物半导体的发光装置及其制造方法。具有氮化镓基III-V族化合物半导体的发光器件包括：衬底; 形成在基板上的p型欧姆电极层; 在p型欧姆电极层上形成的p型氮化镓系III-V族化合物半导体层，形成在所述p型氮化镓系III-V族化合物半导体层上的n型氮化镓系III-V族化合物半导体层，在n型氮化镓系III-V族化合物半导体层上形成的n型欧姆电极层，以及折射率小于n型氮化镓系III-V族化合物半导体层和n型欧姆电极层的折射率的第一和第二折射率控制层，并且金字塔结构形成在第二折射率控制层。根据本发明的一个实施例，第一和第二折射率控制层可以被包括在具有氮化镓基III-V族化合物半导体的发光器件的上部，并且可以形成金字塔结构在第二折射率控制层中，由此使输出的表面光增加比典型发光二极管的多1.5倍。

2. 发明申请

WO2013006017A3 SUBSTRATE FOR SOLAR CELL AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：用于太阳能电池的基板及其制造方法
公开(公告)号：WO2013006017A3
公开(公告)日：2013-03-14
申请号：PCT/KR2012005395
申请日：2012-07-06
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , YU HAK KI , DONG WAN JAE , JUNG GWAN HO
发明人： LEE JONG LAM , YU HAK KI , DONG WAN JAE , JUNG GWAN HO
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/0392 , H01L31/02366 , Y02E10/50
摘要： The present invention relates to a substrate for a solar cell and a method for manufacturing same. The substrate for a solar cell, according to the present invention, is with a substrate for a solar cell having an electrode and an active layer, and comprises a substrate member and a film on one side of the substrate member, wherein the film is made of a material having an anisotropic crystal structure, and has a plurality of concave and convex parts on the surface thereof, the concave and convex parts being spontaneously generated from surface energy differentials of the crystal face of the anisotropic crystal structure. Having the film on one surface of the substrate member by depositing a material having an anisotropic crystal structure, to the present invention enables a spontaneous formation of convex and concave parts on the surface of the film from the surface energy differentials of the crystal face of the anisotropic crystal structure, thereby scattering and expanding the incident light on the solar cell to increase the amount of light that is absorbed in the photoactive layer. Thus the substrate for a solar cell having a plurality of concave and convex parts, which increase the pathways for the light to penetrate the photoactive layer, can be formed easily and at a low cost, and regardless of the kinds of substrate members used for the substrate for a solar cell, a plurality of concave and convex parts can be stably formed on the substrate for a solar cell.
摘要翻译：本发明涉及太阳能电池用基板及其制造方法。根据本发明的用于太阳能电池的基板具有用于具有电极和有源层的太阳能电池的基板，并且包括基板部件和在基板部件的一侧上的膜，其中所述膜被制成具有各向异性晶体结构的材料，并且在其表面上具有多个凹凸部分，由各向异性晶体结构的晶面的表面能量差自发产生凹凸部。通过沉积具有各向异性晶体结构的材料，在基板部件的一个表面上具有该膜，本发明能够从膜的表面的表面能量差自发形成膜表面的凸部和凹部各向异性晶体结构，从而将入射光散射并膨胀在太阳能电池上，以增加在光敏层中吸收的光量。因此，能够容易且低成本地形成具有多个凹凸部的太阳能电池用基板，该多个凹部和凸部增加了光穿透光活性层的路径，并且不管用于用于太阳能电池的基板，可以在太阳能电池基板上稳定地形成多个凹凸部。

3. 发明申请

WO2013006016A3 SOLAR CELL ELEMENT AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：太阳能电池元件及其制造方法
公开(公告)号：WO2013006016A3
公开(公告)日：2013-02-28
申请号：PCT/KR2012005394
申请日：2012-07-06
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , YU HAK KI , DONG WAN JAE , JUNG GWAN HO
发明人： LEE JONG LAM , YU HAK KI , DONG WAN JAE , JUNG GWAN HO
IPC分类号： H01L31/042 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L51/442 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to a solar cell element and a manufacturing method for same. The solar cell element, according to the present invention, comprises: a substrate which transmits light; a first electrode, which is formed on the substrate and made of conductive and light-transmitting material, and which comprises a plurality of nano branch structures, each of which has a nano-scale tree branch shape; a photoactive layer, which is formed on the first electrode provided with an electron donor and an electron acceptor; and a second electrode, which is formed on the photoactive layer made of a conductive material. Tthe present invention can increase light pathways in the photoactive layer by having a plurality of nano branch structures, in which the first electrode effectively expands and scatters incident light, and thereby can improve the efficiency of the solar cell element by increasing the amount of light absorbed in the photoactive layer. Further, as the photoactive layer is formed on the upper surface of the first electrode with the nano branch structure of the first electrode embedded therein, the present invention can rapidly transfer an electron charge generated in the interior of the photoactive layer to the nano branch structure of the first electrode, thereby further improving the efficiency of the solar cell element.
摘要翻译：太阳能电池元件及其制造方法技术领域本发明涉及太阳能电池元件及其制造方法。根据本发明的太阳能电池元件包括：透光的基板; 第一电极，其形成在基板上并且由导电和透光材料制成，并且包括多个纳米分支结构，每个具有纳米级树枝形状; 光电活性层，其形成在具有电子给体和电子受体的第一电极上; 以及形成在由导电材料制成的光活性层上的第二电极。本发明可以通过具有多个纳米分支结构来增加光活性层中的光通路，其中第一电极有效地扩散和散射入射光，从而可以通过增加吸收的光量来提高太阳能电池元件的效率在光敏层。此外，由于在第一电极的上表面上形成有第一电极的上表面，因此本发明可以将在光活性层内部产生的电子电荷迅速转移到纳米分支结构从而进一步提高太阳能电池元件的效率。

4. 发明公开

KR20120005326A Light-emitting device having mgo pyramid structure and method for manufacturing the same 有权
标题翻译：具有MGO PYRAMID结构的发光装置及其制造方法
公开(公告)号：KR20120005326A
公开(公告)日：2012-01-16
申请号：KR20100066021
申请日：2010-07-08
申请人： SEOUL OPTO DEVICE CO LTD , POSTECH ACAD IND FOUND
发明人： LEE JONG LAM , SON JUNG HO , YU HAK KI
IPC分类号： H01L33/28 , H01L33/22
CPC分类号： H01L33/58 , H01L33/007 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0058
摘要： PURPOSE: A light emitting device having an MgO pyramid structure and a manufacturing method thereof are provided to improve optical power of a light emitting diode by preventing total reflection which is generated in a semiconductor layer and aeropause of the light emitting diode. CONSTITUTION: A first semiconductor layer is formed on the upper side of a substrate(500). A active layer(230) is placed between the first semiconductor layer and a second semiconductor layer. A refractive index control layer comprises a first refractive index control layer(300) and a second refractive index control layer(400). A refractive index of the first refractive index control layer is smaller than a refractive index of the first semiconductor layer. A refractive index of the second refractive index control layer is smaller than the refractive index of the first refractive index control layer.
摘要翻译：目的：提供具有MgO金字塔结构的发光器件及其制造方法，以通过防止在半导体层中产生的全反射和发光二极管的空气停止来提高发光二极管的光功率。构成：在基板（500）的上侧形成有第一半导体层。有源层（230）被放置在第一半导体层和第二半导体层之间。折射率控制层包括第一折射率控制层（300）和第二折射率控制层（400）。第一折射率控制层的折射率小于第一半导体层的折射率。第二折射率控制层的折射率小于第一折射率控制层的折射率。

5. 发明授权

KR101135928B1 Method of forming zinc oxide thin layer on silicon substrate using buffer layer 有权
标题翻译：使用缓冲层在硅衬底上形成氧化锌薄膜的方法
公开(公告)号：KR101135928B1
公开(公告)日：2012-04-13
申请号：KR20100102960
申请日：2010-10-21
申请人： POSTECH ACAD IND FOUND
发明人： YU HAK KI , LEE JONG LAM
IPC分类号： H01L31/0224
CPC分类号： H01L31/0392 , H01L31/18
摘要： PURPOSE: A method of forming a zinc oxide thin layer on a silicon substrate using a buffer layer is provided to reduce the lattice mismatch degrees between a ZnO(Zinc Oxide) thin film and a Si(Sillicon) substrate. CONSTITUTION: A MgO(Magnesium Oxide) buffer layer(20) is formed on a Si(Sillicon) substrate(10). A ZnO(Zinc Oxide) thin film layer(30) is formed on the MgO buffer layer. A buffer layer and a ZnO thin film are deposited in the same deposition method. The buffer layer consists of a multi-layered structure having more than 2 layers. The deposition method is an electron beam deposition method, a pulse laser deposition method, or a chemical vapor deposition method.
摘要翻译：目的：提供使用缓冲层在硅衬底上形成氧化锌薄层的方法，以减少ZnO（氧化锌）薄膜和Si（Sillicon）衬底之间的晶格失配度。构成：在Si（硅衬底）衬底（10）上形成MgO（氧化镁）缓冲层（20）。在MgO缓冲层上形成ZnO（氧化锌）薄膜层（30）。以相同的沉积方法沉积缓冲层和ZnO薄膜。缓冲层由具有多于2层的多层结构组成。沉积法是电子束沉积法，脉冲激光沉积法或化学气相沉积法。

6. 发明公开

KR20120077596A Method of manufacturing light emitting diode using zinc oxide nano-rods as a mask 审中-公开
标题翻译：使用氧化锌纳米线作为掩模制造发光二极管的方法
公开(公告)号：KR20120077596A
公开(公告)日：2012-07-10
申请号：KR20100139613
申请日：2010-12-30
申请人： POSTECH ACAD IND FOUND , UNIST ACADEMY IND RES CORP
发明人： LEE JONG LAM , YU HAK KI , KIM BUEM JOON , SON JUN HO , BAIK JEONG MIN , YE BYEONG UK
IPC分类号： H01L33/28
CPC分类号： H01L33/0087 , H01L21/02458 , H01L33/22 , H01L33/32 , H01L2933/0083
摘要： PURPOSE: A method of manufacturing a light emitting diode is provided to reduce damage to an electrode layer by forming a nanostructure for a mask through hydrothermal synthesis at low temperature of less than 100°C. CONSTITUTION: A nitride base semiconductor layer is laminated and a light emitting device is manufactured. Surface processing is performed to form a zinc oxide nanostructure on the top of the nitride base semiconductor layer(S10). The nanostructure consisting of zinc oxide is formed on the surface of the nitride base semiconductor layer by putting a light emitting device in an autoclave and using an aqueous solution for forming the zinc oxide(S20). The nanostructure consisting of nitride is formed on the nitride base semiconductor layer by dry-etching the surface of the nitride base semiconductor layer on which the zinc oxide nanostructure is formed(S30).
摘要翻译：目的：提供一种制造发光二极管的方法，以通过在低于100℃的低温下通过水热合成形成用于掩模的纳米结构来减少对电极层的损伤。构成：层叠氮化物半导体层，制造发光元件。进行表面处理以在氮化物基底半导体层的顶部形成氧化锌纳米结构（S10）。通过将发光元件放入高压釜中并使用形成氧化锌的水溶液，在氮化物基底半导体层的表面上形成由氧化锌构成的纳米结构体（S20）。通过干法蚀刻形成有氧化锌纳米结构的氮化物基底半导体层的表面，在氮化物基底半导体层上形成由氮化物构成的纳米结构（S30）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式