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1. 发明申请

WO2012099436A3 METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY 审中-公开
标题翻译：制造发光二极管的方法和制造的发光二极管
公开(公告)号：WO2012099436A3
公开(公告)日：2012-09-20
申请号：PCT/KR2012000549
申请日：2012-01-20
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , KIM JONG UK , SON JUN HO , SONG YANG HEE , KIM BUEM JOON , YOO CHUL JONG
发明人： LEE JONG LAM , KIM JONG UK , SON JUN HO , SONG YANG HEE , KIM BUEM JOON , YOO CHUL JONG
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L2933/0091
摘要： The present invention relates to a method for manufacturing a light-emitting diode, in which the tilt angle of a convex-concave portion formed in a semiconductor layer are adjusted through the variation of a dry-etching condition using the difference between etching speeds (etching rates) of a nanostructure and a semiconductor layer during dry etching, to thereby improve light extraction efficiency. The present invention also relates to a light-emitting diode manufactured by the method. The present invention is a method for manufacturing a light-emitting diode in which an active layer and a second semiconductor layer are sequentially formed on a first semiconductor layer, wherein the method comprises: a step of coating a nanostructure onto the second semiconductor layer; and a step of dry-etching the nanostructure together with the second semiconductor layer using the nanostructure as a mask, to thus form a convex-concave portion in the second semiconductor layer. The nanostructure uses a material which enables easier dry-etching than the material of the second semiconductor layer, and a dry-etching condition is set in consideration of the difference in the etching rate between the second semiconductor layer and the nanostructure, so as to adjust the tilt angle of the side surface of the convex-concave portion formed in the second semiconductor layer.
摘要翻译：本发明涉及一种用于制造发光二极管的方法，其中通过使用蚀刻速度差（蚀刻速率）之间的干蚀刻条件的变化来调节形成在半导体层中的凸凹部分的倾斜角度速率）的干燥蚀刻中的纳米结构和半导体层，从而提高光提取效率。本发明还涉及通过该方法制造的发光二极管。本发明是一种制造发光二极管的方法，其中有源层和第二半导体层依次形成在第一半导体层上，其中该方法包括：将纳米结构涂覆在第二半导体层上的步骤; 以及使用纳米结构作为掩模将纳米结构与第二半导体层一起干蚀刻的步骤，从而在第二半导体层中形成凸凹部。纳米结构使用能够比第二半导体层的材料更容易干蚀刻的材料，并且考虑到第二半导体层和纳米结构之间的蚀刻速率的差异来设定干法蚀刻条件，以便调整形成在第二半导体层中的凸凹部的侧面的倾斜角度。

2. 发明申请

WO2012091329A3 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED THEREBY 审中-公开
标题翻译：制造发光器件的方法和由其制造的发光器件
公开(公告)号：WO2012091329A3
公开(公告)日：2012-08-23
申请号：PCT/KR2011009647
申请日：2011-12-15
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , SONG YANG HEE , YOO CHUL JONG
发明人： LEE JONG LAM , SONG YANG HEE , YOO CHUL JONG
IPC分类号： H01L33/22 , H01L33/50
CPC分类号： H01L33/007 , H01L33/06 , H01L33/24 , H01L33/38
摘要： The present invention relates to a light-emitting device having a significantly enhanced light-emitting efficiency, by expanding the coating area of a fluorescent body being coated on a light-emitting diode, and placing the coating location close to an active layer (SQW or MQW). The method for manufacturing a light-emitting device of the present invention comprises a step for forming a concavo-convex portion on one surface of the light-emitting diode by forming the concavo-convex portion on the surface of a substrate, and forming consecutively on the substrate a first semiconductor layer, an active layer, and a second semiconductor layer so that the shape of the concavo-convex portion is maintained; and a step for coating the fluorescent body on the concave portion of the concavo-convex portion formed on the light-emitting diode so as to be inserted thereby.
摘要翻译：本发明涉及一种具有显着增强的发光效率的发光装置，其通过扩大涂覆在发光二极管上的荧光体的涂覆区域并且将涂覆位置放置在靠近有源层（SQW或 MQW）。本发明的发光装置的制造方法包括：通过在基板的表面形成凹凸部，在发光二极管的一个面上形成凹凸部的工序，所述衬底包括第一半导体层，有源层和第二半导体层，从而保持所述凹凸部分的形状; 以及将荧光体涂覆在形成在发光二极管上的凹凸部分的凹入部分以便插入其中的步骤。

3. 发明申请

WO2013012195A2 METHOD FOR MANUFACTURING SUBSTRATE AND METHOD OR MANUFACTURING ELECTRONIC DEVICE USING SAME 审中-公开
标题翻译：制造衬底的方法和使用该方法或制造电子器件的方法
公开(公告)号：WO2013012195A2
公开(公告)日：2013-01-24
申请号：PCT/KR2012005466
申请日：2012-07-10
申请人： POSTECH ACAD IND FOUND , LEE JONG LAM , YOO CHUL JONG , KIM KI SOO , SON JUN HO
发明人： LEE JONG LAM , YOO CHUL JONG , KIM KI SOO , SON JUN HO
IPC分类号： H01L21/027
CPC分类号： H01L21/32139
摘要： The present invention relates to a method for significantly reduce manufacturing cost of an electronic device by selectively forming a nano-dimple on a metal layer that is patterned at a low cost. The method, according to the present invention comprises the steps of: (a) forming the metal layer on a substrate; (b) forming a mask layer, which is provided with a predetermined pattern, on the metal layer; (c) forming a metal oxide having self-alignment nano-holes on the metal layer, which is exposed, by submerging the substrate in an acid solution and applying a voltage; and (d) forming the nano-dimple on the metal layer by removing the metal oxide by means of etching.
摘要翻译：本发明涉及一种通过在以低成本图案化的金属层上选择性地形成纳米凹坑来显着降低电子器件的制造成本的方法。根据本发明的方法包括以下步骤：（a）在衬底上形成金属层; （b）在所述金属层上形成具有预定图案的掩模层; （c）通过将所述衬底浸没在酸溶液中并施加电压，在暴露的所述金属层上形成具有自对准纳米孔的金属氧化物; （d）通过蚀刻除去金属氧化物，在金属层上形成纳米凹坑。

4. 发明公开

KR20120077612A Manufacturing method for light emitting element and light emitting element manufactrued thereby 审中-公开
标题翻译：用于发光元件和发光元件的制造方法
公开(公告)号：KR20120077612A
公开(公告)日：2012-07-10
申请号：KR20100139640
申请日：2010-12-30
申请人： POSTECH ACAD IND FOUND
发明人： LEE JONG LAM , SONG YANG HEE , YOO CHUL JONG
IPC分类号： H01L33/22 , H01L33/50
CPC分类号： H01L33/007 , H01L33/06 , H01L33/24 , H01L33/38 , H01L33/22 , H01L33/42 , H01L33/50 , H01L2933/0091
摘要： PURPOSE: A manufacturing method of a light emitting device and the light emitting device manufactured thereby are provided to improve light emitting efficiency by arranging a coating area of a fluorescent substance to be close to an active layer(SQW or MQW). CONSTITUTION: An n-type gallium nitride semiconductor layer(n-GaN) is formed on a sapphire substrate(S1-1). An etching protection film on which a pattern is formed is formed(S1-2). An uneven portion serving as a template of a pillar shape or a hole shape is formed on an n-GaN layer(S1-3). The shape of the uneven portion on the n-GaN layer is maintained by epitaxially growing an active layer(MQW) through an MOCVD(Metalorganic Chemical Vapor Deposition) method or an MBE(Molecular Beam Epitaxy) method(S1-4). A PN junction light emitting diode substrate is manufactured on the top of the active layer while The shape of the uneven portion is to be maintained by epitaxially growing p-type Gallium Nitride(p-GaN) layer(S1-5).
摘要翻译：目的：提供一种发光器件的制造方法和由此制造的发光器件，以通过将荧光物质的涂布面积设置为接近活性层（SQW或MQW）来提高发光效率。构成：在蓝宝石衬底（S1-1）上形成n型氮化镓半导体层（n-GaN）。形成有图案的蚀刻保护膜（S1-2）。在n-GaN层（S1-3）上形成作为柱状或孔状的模板的凹凸部。通过MOCVD（金属有机化学气相沉积）法或MBE（分子束外延）法（S1-4）外延生长活性层（MQW）来维持n-GaN层上的不均匀部分的形状。在有源层的顶部制造PN结发光二极管衬底，而通过外延生长p型氮化镓（p-GaN）层（S1-5）来保持不平坦部分的形状。

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