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1. 发明申请

WO2003043093A1 A MASK FOR CRYSTALLIZING POLYSILICON AND A METHOD FOR FORMING THIN FILM TRANSISTOR USING THE MASK 审中-公开
标题翻译：用于晶体结晶的掩模和使用掩模形成薄膜晶体管的方法
公开(公告)号：WO2003043093A1
公开(公告)日：2003-05-22
申请号：PCT/KR2002/000111
申请日：2002-01-24
申请人： SAMSUNG ELECTRONICS CO., LTD. , KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young
发明人： KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young
IPC分类号： H01L29/786
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0268 , H01L21/2026 , H01L29/66757 , H01L29/78675 , Y10S260/35
摘要： A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line. The slit patterns arranged at the respective slit regions in the vertical direction are spaced from each other with a distance of 8*d. Alternatively, the first to fourth slit regions may be arranged in reverse order, or in the vertical direction.
摘要翻译：用于形成多晶硅的掩模具有第一狭缝区域，其中垂直方向上布置多个水平狭缝图案，同时承载相同的宽度，在垂直方向上布置多个水平狭缝图案的第二狭缝区域，同时承载相同的宽度宽度，在垂直方向上布置多个水平狭缝图案同时具有相同宽度的第三狭缝区域，以及沿着垂直方向布置多个水平狭缝图案的第四狭缝区域，同时承载相同的宽度。布置在第一至第四狭缝区域的狭缝图案在第一狭缝区域上与狭缝图案的宽度d成一定比例地沿水平方向的宽度依次增大。沿水平方向布置在第一至第四狭缝区域处的狭缝图案的中心位于相同的线上。在垂直方向的各个狭缝区域上排列的狭缝图案彼此间隔8 * d。或者，第一至第四狭缝区域可以以相反的顺序或在垂直方向上布置。

2. 发明申请

WO2004042781A2 THIN FILM TRANSISTOR ARRAY PANEL 审中-公开
标题翻译：薄膜晶体管阵列
公开(公告)号：WO2004042781A2
公开(公告)日：2004-05-21
申请号：PCT/KR2003/002346
申请日：2003-11-04
申请人： SAMSUNG ELECTRONICS CO., LTD. , LEE, Su-Gyeong , KANG, Sook-Young , KANG, Myung-Koo , KIM, Hyun-Jae , IM, James S.
发明人： LEE, Su-Gyeong , KANG, Sook-Young , KANG, Myung-Koo , KIM, Hyun-Jae , IM, James S.
IPC分类号： H01L
CPC分类号： H01L27/1214 , H01L27/1255 , H01L27/1285 , H01L27/1296 , H01L29/78645
摘要： A thin film transistor array panel is provided, which includes: a substrate including a plurality of pixel areas; a semiconductor layer formed on the substrate and including a plurality of pairs of first and second semiconductor portions in respective pixel areas; a first insulating layer formed on the semiconductor layer; a gate wire formed on the first insulating layer; a second insulating layer formed on the gate wire; a data wire formed on the second insulating layer; a third insulating layer formed on the data wire; a pixel electrode formed on the third insulating layer and connected to the data wire, wherein width and length of at least one of the first and the second semiconductor portions vary between at least two pixel areas.
摘要翻译：提供一种薄膜晶体管阵列面板，其包括：包括多个像素区域的基板; 半导体层，形成在所述基板上，并且在各像素区域中包括多对第一和第二半导体部分; 形成在所述半导体层上的第一绝缘层; 形成在所述第一绝缘层上的栅极线; 形成在栅极线上的第二绝缘层; 形成在所述第二绝缘层上的数据线; 形成在数据线上的第三绝缘层; 形成在第三绝缘层上并连接到数据线的像素电极，其中第一和第二半导体部分中的至少一个的宽度和长度在至少两个像素区域之间变化。

3. 发明申请

WO2003060602A1 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY 审中-公开
标题翻译：薄膜晶体管和液晶显示器
公开(公告)号：WO2003060602A1
公开(公告)日：2003-07-24
申请号：PCT/KR2003/000008
申请日：2003-01-03
申请人： SAMSUNG ELECTRONICS CO., LTD. , KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young , CHUNG, Woo-Suk
发明人： KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young , CHUNG, Woo-Suk
IPC分类号： G02F1/136
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

4. 发明申请

WO2003034503A1 A THIN FILM TRANSISTOR USING POLYSILICON AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：一种使用多晶硅的薄膜晶体管及其制造方法
公开(公告)号：WO2003034503A1
公开(公告)日：2003-04-24
申请号：PCT/KR2002/001298
申请日：2002-07-09
申请人： SAMSUNG ELECTRONICS CO., LTD. , KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young , PARK, Cheol-Ho
发明人： KANG, Myung-Koo , KIM, Hyun-Jae , KANG, Sook-Young , PARK, Cheol-Ho
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L29/78675
摘要： In a method of manufacturing a thin film transistor according to the present invention, an amorphous silicon thin film is firstly formed on an insulating substrate and a planarization layer is formed thereon. Thereafter, the amorphous silicon thin film is crystallized by a solidification process using a laser-irradiation to form a polysilicon thin film. Next, the polysilicon thin film and the planarization layer are patterned to form a semiconductor layer, and a gate insulating layer covering the semiconductor layer is formed. Then, a gate electrode is formed on the gate insulating layer opposite the semiconductor layer. Next, impurities are implanted into the semiconductor layer to form a source region and a drain region opposite each other with respect to the gate electrode, and a source electrode and a drain electrode electrically connected to the source region and the drain region, respectively, are formed.
摘要翻译：在本发明的薄膜晶体管的制造方法中，首先在绝缘基板上形成非晶硅薄膜，在其上形成平坦化层。此后，通过使用激光照射的固化工艺使非晶硅薄膜结晶，形成多晶硅薄膜。接下来，对多晶硅薄膜和平坦化层进行构图以形成半导体层，并且形成覆盖半导体层的栅极绝缘层。然后，在与半导体层相对的栅极绝缘层上形成栅电极。接下来，将杂质注入到半导体层中以形成相对于栅极彼此相对的源极区域和漏极区域，并且分别与源极区域和漏极区域电连接的源极电极和漏极电极是形成。

5. 发明申请

WO2003052833A1 A METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING POLY SILICON 审中-公开
标题翻译：使用聚硅制造薄膜晶体管的方法
公开(公告)号：WO2003052833A1
公开(公告)日：2003-06-26
申请号：PCT/KR2002/000131
申请日：2002-01-29
申请人： SAMSUNG ELECTRONICS CO., LTD. , SONG, Jean, Ho , CHOI, Joon, Hoo , CHOI, Beom-Rak , KANG, Myung-Koo , KANG, Sook-Young
发明人： SONG, Jean, Ho , CHOI, Joon, Hoo , CHOI, Beom-Rak , KANG, Myung-Koo , KANG, Sook-Young
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L29/78675
摘要： A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl 2 , SF 6 and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer. A source region and a drain region opposite each other with respect to the gate electrode are formed by implanting impurities into I the semiconductor layer and a source electrode and drain electrode are forined to be electrically connected to the source region and drain region.
摘要翻译：薄膜晶体管的制造方法。在绝缘基板上形成非晶硅薄膜，并通过横向固化工艺使激光束照射到非晶硅薄膜中而形成多晶硅薄膜而结晶。接下来，通过使用包含Cl 2，SF 6和Ar的气体混合物以3:1:2的比例通过等离子体干法蚀刻去除从多晶硅薄膜的表面突出的突出部分，以平滑多晶硅薄膜的表面，并且通过图案化多晶硅薄膜形成半导体层。形成覆盖半导体层的栅极绝缘膜，并且在与半导体层相对的栅极绝缘膜上形成栅电极。通过将杂质注入到半导体层中而形成源极区域和相对于栅极电极相对的漏极区域，源电极和漏极电极被电连接到源极区域和漏极区域。

6. 发明申请

WO2004038775A1 METHOD OF POLYCYRSTALLIZATION, METHOD OF MANUFACTURING POLYSILICON THIN FILM TRANSISTOR, AND LASER IRRADIATION DEVICE THEREFOR 审中-公开
标题翻译：聚合方法，多晶硅薄膜晶体管的制造方法及其激光辐射装置
公开(公告)号：WO2004038775A1
公开(公告)日：2004-05-06
申请号：PCT/KR2003/002212
申请日：2003-10-21
申请人： SAMSUNG ELECTRONICS CO., LTD. , KIM, Hyun-Jae , KANG, Myung-Koo
发明人： KANG, Myung-Koo
IPC分类号： H01L21/20
CPC分类号： H01L27/1285 , B23K26/02 , B23K26/066 , H01L21/02532 , H01L21/0268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.
摘要翻译：用于将激光束照射到形成在基板上的非晶硅薄膜上的装置。该装置包括：安装基板的台架; 用于产生激光束的激光振荡器; 用于将激光束聚焦并引导到薄膜上的投影透镜; 用于反射引导到薄膜上的激光束的反射器; 用于控制所述反射器的位置的控制器; 以及用于吸收由反射器反射的激光束的吸收体。

7. 发明申请

WO2004086489A1 SYSTEM AND METHOD OF SILICON CRYSTALLIZATION 审中-公开
标题翻译：非晶硅的结晶装置及方法
公开(公告)号：WO2004086489A1
公开(公告)日：2004-10-07
申请号：PCT/KR2004/000520
申请日：2004-03-12
申请人： SAMSUNG ELECTRONICS CO. LTD. , LEE, Su-Gyeong , KIM, Dong-Byum , KANG, Myung-Koo , CHUNG, Ui-Jin , KIM, Hyun-Jae
发明人： LEE, Su-Gyeong , KIM, Dong-Byum , KANG, Myung-Koo , CHUNG, Ui-Jin , KIM, Hyun-Jae
IPC分类号： H01L21/324
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/067 , B23K26/0673 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L21/268
摘要： A plurality laser beams generated by a plurality of beam generators are synthesized by a beam synthesizer. The synthesized beam is splitted into a plurality of beamlets and provided for a plurality of optical units controlling the beamlets. Each beamlet controlled by each optical unit is illuminated onto an amorphous silicon layer deposited on a substrate that is mounted on a plurality of stages to be polycrystallized.
摘要翻译：由多个光束发生器产生的多个激光束由光束合成器合成。合成的光束被分裂成多个子束并且被设置用于控制子束的多个光学单元。由每个光学单元控制的每个子束被照射到沉积在基板上的非晶硅层上，所述非晶硅层安装在多个阶段上以进行多晶化。

8. 发明申请

WO2004077544A1 CRYSTALLIZATION APPARATUS AND METHOD OF AMORPHOUS SILICON 审中-公开
标题翻译：非晶硅的结晶装置及方法
公开(公告)号：WO2004077544A1
公开(公告)日：2004-09-10
申请号：PCT/KR2004/000382
申请日：2004-02-24
申请人： SAMSUNG ELECTRONICS CO. LTD. , CHUNG, Ui-Jin , KIM, Dong-Byum , LEE, Su-Gyeong , KANG, Myung-Koo , KIM, Hyun-Jae
发明人： CHUNG, Ui-Jin , KIM, Dong-Byum , LEE, Su-Gyeong , KANG, Myung-Koo , KIM, Hyun-Jae
IPC分类号： H01L21/324
CPC分类号： B23K26/0676 , B23K26/06 , B23K26/064 , B23K26/0643 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K2201/40 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
摘要翻译：硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

9. 发明申请

WO2009113749A1 WAFER TESTING SYSTEM COMPRISING CHILLER 审中-公开
标题翻译：包括冷冻机的水果测试系统
公开(公告)号：WO2009113749A1
公开(公告)日：2009-09-17
申请号：PCT/KR2008/001499
申请日：2008-03-17
申请人： SEMICS INC. , KANG, Myung-Koo , PARK, Chan-Min , KANG, Kun-Su
发明人： KANG, Myung-Koo , PARK, Chan-Min , KANG, Kun-Su
IPC分类号： H01L21/66
CPC分类号： H01L21/67109 , G01R31/2877
摘要： A wafer test system including a wafer prober device having a chuck is provided. The wafer test system includes: a dry air supply device receiving compressed air and dehumidifying the compressed air; a cooling device including a container for storing liquefied gas; and a central control device cooling dry air supplied from the dry air supply device, mixing the cooled dry air with a predetermined amount of the liquefied gas stored in the container, and supplying the mixture to the chuck of the wafer prober device. Accordingly, the wafer test system has refrigeration efficiency optimized for testing a wafer in an ultra-low temperature environment by using the wafer prober device, thereby reducing a preparation time for testing the wafer in the ultra-low temperature environment.
摘要翻译：提供了包括具有卡盘的晶片探测器装置的晶片测试系统。晶片测试系统包括：干燥空气供应装置，接收压缩空气并对压缩空气进行除湿; 冷却装置，包括用于储存液化气体的容器; 以及中央控制装置，其冷却从干燥空气供给装置供给的干燥空气，将冷却的干燥空气与存储在容器中的规定量的液化气体混合，将混合物供给到晶片探测装置的卡盘。因此，晶片测试系统具有优化的制冷效率，用于通过使用晶片探针器件在超低温环境中测试晶片，从而减少了在超低温环境下测试晶片的准备时间。

10. 发明申请

WO2006031037A1 ILLUMINATING DEVICE USING LIGHT SOURCE DEVICE 审中-公开
标题翻译：使用光源设备的照明设备
公开(公告)号：WO2006031037A1
公开(公告)日：2006-03-23
申请号：PCT/KR2005/002998
申请日：2005-09-12
申请人： KANG, Myung-Koo
发明人： KANG, Myung-Koo
IPC分类号： F21V8/00
CPC分类号： G02B6/0006 , G03B15/02
摘要： Disclosed is an illuminating device using light emitting elements. The illuminating device includes a plurality of focusing lens sets (2) including light emitting elements and a lens assembly for gathering light such that the light radiated from the light emitting elements is directed to a single focusing point within a predetermined incident angle, a light transfer unit (3) spaced apart from the focusing lens sets (2) by a predetermined distance and including an optical fiber or an optical waveguide having a light incident surface formed at the focusing point and a light emitting surface formed in opposition to the light incident surface, and a light radiating unit (4) connected to the light emitting surface of the light transfer unit (3) in order to radiate the light generated from the light emitting surface toward a predetermined area. The light emitting elements, such as laser diodes or LEDs, are used as light sources. Light generated from the light emitting element is focused onto the light incident surface of the optical fiber or the optical waveguide spaced apart from the light emitting element by a predetermine distance, so that the light emits through the light emitting surface by passing through the optical fiber or the optical waveguide, thereby illuminating a desired place. The illuminating device effectively illuminates a specific area located within a short distance or a long distance (more than 1 Km) from the illuminating device. If the light radiating unit (4) is fabricated in the form of a projection lens set equipped with a reverse-zoom lens, the illuminating device maximizes the light efficiency in cooperation with an external device, such as a camera using a zoom lens.
摘要翻译：公开了使用发光元件的照明装置。照明装置包括多个包括发光元件的聚焦透镜组（2）和用于聚集光的透镜组件，使得从发光元件辐射的光被引导到预定入射角内的单个聚焦点，光传输单元（3）与聚焦透镜组（2）间隔预定距离，并且包括具有形成在聚焦点处的光入射表面的光纤或光波导和与光入射面成反比的发光面以及连接到光传输单元（3）的发光表面的光辐射单元（4），以便将从发光表面产生的光朝向预定区域辐射。诸如激光二极管或LED的发光元件被用作光源。从发光元件产生的光被聚焦在与光发射元件间隔开的光纤或光波导的光入射面上预定的距离，使得光通过光纤通过发光表面或光波导，从而照亮所需的位置。照明装置有效地照射距离照明装置短距离或长距离（大于1公里）的特定区域。如果以配备有反变焦镜头的投影透镜组的形式制造光照射单元（4），则照明装置与诸如使用变焦透镜的照相机等外部装置协调使光效达到最大。

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