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1. 发明申请

WO2016164759A1 LASER IRRADIATION INDUCED SURFACE PLANARIZATION OF POLYCRYSTALLINE SILICON FILMS 审中-公开
标题翻译：激光辐照诱导多晶硅薄膜的表面平面化
公开(公告)号：WO2016164759A1
公开(公告)日：2016-10-13
申请号：PCT/US2016/026698
申请日：2016-04-08
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , IM, James, S. , YU, Miao
发明人： IM, James, S. , YU, Miao
IPC分类号： H01L21/20 , H01L21/302 , B23K26/0622
CPC分类号： H01L21/02686 , B23K26/0081 , B23K26/03 , B23K26/0622 , B23K26/0624 , B23K26/354 , B23K2201/40 , B23K2203/08 , B23K2203/56 , H01L21/02074 , H01L21/02532 , H01L21/02587 , H01L21/02595 , H01L21/302 , H01L21/32115
摘要： A method for planarizing excimer laser annealed (ELA) polycrystalline thin films via laser irradiation. The method includes providing an ELA thin film having an oxide and a top surface with a first surface roughness defined at least by a first plurality of protrusions. The ELA thin film is etched to substantially remove the oxide. At least a portion of the etched ELA thin film is then irradiated using a short-pulse duration excimer laser beam, to form an irradiated thin film with a second surface roughness defined at least by a second plurality of protrusions. The second surface roughness is lower than the first surface roughness.
摘要翻译：一种通过激光照射平面化准分子激光退火（ELA）多晶薄膜的方法。该方法包括提供具有至少由第一多个突起限定的第一表面粗糙度的氧化物和顶表面的ELA薄膜。蚀刻ELA薄膜以基本上除去氧化物。然后使用短脉冲持续时间准分子激光束照射蚀刻的ELA薄膜的至少一部分，以形成具有至少由第二多个突起限定的第二表面粗糙度的经辐射的薄膜。第二表面粗糙度低于第一表面粗糙度。

2. 发明申请

WO2011056787A1 SYSTEMS AND METHODS FOR NON-PERIODIC PULSE PARTIAL MELT FILM PROCESSING 审中-公开
标题翻译：非定期脉冲部分熔体薄膜处理的系统和方法
公开(公告)号：WO2011056787A1
公开(公告)日：2011-05-12
申请号：PCT/US2010/055106
申请日：2010-11-02
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , IM, James, S. , DENG, Yikang , HU, Qiongying , CHUNG, Ui-jin , LIMANOV, Alexander, B.
发明人： IM, James, S. , DENG, Yikang , HU, Qiongying , CHUNG, Ui-jin , LIMANOV, Alexander, B.
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , B23K26/0081 , B23K26/083 , B23K2201/40 , H01L21/02532 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L21/707 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678
摘要： In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.
摘要翻译：一方面，本公开内容涉及一种处理薄膜的方法，包括当沿着第一选定方向前进薄膜时，用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，每个激光器脉冲提供成形的束并且具有足以使薄膜部分熔融并且第一区域重新凝固和结晶以形成第一结晶区域的能量密度，并且用第三激光脉冲和第三激光脉冲照射薄膜的第二区域第四激光脉冲，每个脉冲提供成形光束并且具有足以部分熔化薄膜并且第二区域重新凝固和结晶以形成第二结晶区域的能量密度，其中第一激光脉冲和第二激光脉冲小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。

3. 发明申请

WO2009111326A3 FLASH LIGHT ANNEALING FOR THIN FILMS 审中-公开
公开(公告)号：WO2009111326A3
公开(公告)日：2009-09-11
申请号：PCT/US2009/035537
申请日：2009-02-27
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , IM, James, S. , VAN DER WILT, Paul, C. , CHUNG, Ui-Jin
发明人： IM, James, S. , VAN DER WILT, Paul, C. , CHUNG, Ui-Jin
IPC分类号： H01L21/268
摘要： A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells.

4. 发明申请

WO2009111326A2 FLASH LIGHT ANNEALING FOR THIN FILMS 审中-公开
标题翻译：闪光灯对薄膜的退火
公开(公告)号：WO2009111326A2
公开(公告)日：2009-09-11
申请号：PCT/US2009035537
申请日：2009-02-27
申请人： UNIV COLUMBIA , IM JAMES S , VAN DER WILT PAUL C , CHUNG UI-JIN
发明人： IM JAMES S , VAN DER WILT PAUL C , CHUNG UI-JIN
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/02425 , H01L21/02532 , H01L21/02609 , H01L21/02686 , H01L21/2686 , H01L21/67115 , H01L31/0236 , H01L31/028 , H01L31/03762 , H01L31/03921 , H01L31/072 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells.
摘要翻译：制造结晶膜的方法包括在基板上提供包含选定的结晶表面取向的晶粒的膜; 使用脉冲光源照射膜，以在提供混合液/固相的条件下提供膜的脉冲熔融，并允许混合的固/液相在提供具有选定表面取向的织构化多晶层的条件下固化。可以使用一种或多种照射处理。该膜适用于太阳能电池。

5. 发明申请

WO2005029546A3 METHOD AND SYSTEM FOR PROVIDING A CONTINUOUS MOTION SEQUENTIAL LATERAL SOLIDIFICATION FOR REDUCING OR ELIMINATING ARTIFACTS, AND A MASK FOR FACILITATING SUCH ARTIFACT REDUCTION/ELIMINATION 审中-公开
标题翻译：用于提供连续运动的顺序运动的方法和系统，用于减少或消除人造物，以及用于促进减少/消除这种减少
公开(公告)号：WO2005029546A3
公开(公告)日：2009-06-18
申请号：PCT/US2004030324
申请日：2004-09-16
申请人： UNIV COLUMBIA , IM JAMES S
发明人： IM JAMES S
IPC分类号： H01L21/20 , H01L20060101
CPC分类号： B23K26/0676 , B23K26/066 , B23K26/073 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691
摘要： An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. According to this invention, the edge areas of the previously irradiated and resolidified areas which likely have artifacts provided therein are overlapped by the subsequent beamlets. In this manner, the edge areas of the previously resolifiied irradiated areas and artifacts therein are completely melted throughout their thickness. At least the subsequent beamlets are shaped such that the grains of the previously irradiated and resolidified areas which border the edge areas melted by the subsequent beamlets grow into these resolidifying edges areas so as to substantially reduce or eliminate the artifacts.
摘要翻译：用于实现在样品上提供的薄膜的单扫描连续运动连续横向固化的布置，处理和掩模，使得在辐射薄膜的子束边缘处形成的伪影显着减少。根据本发明，先前照射和重新固化的区域中可能具有伪像的边缘区域被随后的子束重叠。以这种方式，先前分解的照射区域的边缘区域和其中的伪像在其厚度上完全熔化。至少后续的子束被成形为使得先前照射和重新固化的区域的与随后的子束熔化的边缘区域相邻的区域的晶粒生长成这些再凝固边缘区域，以便基本上减少或消除伪影。

6. 发明申请

WO2005029548A3 SYSTEM AND PROCESS FOR PROVIDING MULTIPLE BEAM SEQUENTIAL LATERAL SOLIDIFICATION 审中-公开
标题翻译：用于提供多个光束顺序横向固化的系统和方法
公开(公告)号：WO2005029548A3
公开(公告)日：2009-04-02
申请号：PCT/US2004030327
申请日：2004-09-16
申请人： UNIV COLUMBIA , IM JAMES S
发明人： IM JAMES S
IPC分类号： B23K26/00 , H01L20060101 , H01L21/20 , H01L21/268 , H01L21/77 , H01L33/00 , H01S3/23
CPC分类号： H01L21/02691 , B23K26/0604 , B23K26/0608 , B23K26/0613 , B23K26/066 , B23K26/067 , H01L21/02532 , H01L21/02686 , H01L27/1285
摘要： A process and system for processing a thin film on a sample are provided. In particular, a plurality of separated beams each including beam pulses are generated. At least one first beam of the separated beams is forwarded through a mask to irradiate and heat the thin film sample prior to further irradiation. At least one second beam of the separated beams is then forwarded through a mask to further irradiate the thin film sample. Additional separated beams are sent through a mask to produce and further irradiate the thin film until the combined intensity of the beams impinging on the sample is sufficient to melt a section of the thin film throughout its entire thickness.
摘要翻译：提供了用于处理样品上的薄膜的方法和系统。特别地，产生包括光束脉冲的多个分离光束。分离的光束的至少一个第一光束通过掩模传送以在进一步照射之前照射和加热薄膜样品。然后将分离的光束的至少一个第二光束通过掩模进行进一步照射薄膜样品。附加的分离的光束通过掩模发送以产生并进一步照射薄膜，直到撞击在样品上的光束的组合强度足以在其整个厚度上熔化薄膜的一部分。

7. 发明申请

WO2007067541A2 SYSTEMS AND METHODS FOR PROCESSING A FILM, AND THIN FILMS 审中-公开
标题翻译：用于处理薄膜和薄膜的系统和方法
公开(公告)号：WO2007067541A2
公开(公告)日：2007-06-14
申请号：PCT/US2006/046405
申请日：2006-12-05
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , IM, James, S.
发明人： IM, James, S.
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： In some embodiments, a method of processing a film is provided, the method comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting; generating a laser beam having a fluence that is selected to form a mixture of solid and liquid in the film and where a fraction of the film is molten throughout its thickness in an irradiated region; positioning the film relative to the laser beam in preparation for at least partially pre-crystallizing a first region of said plurality of spaced-apart regions; directing the laser beam onto a moving at least partially reflective optical element in the path of the laser beam, the moving optical element redirecting the beam so as to scan a first portion of the first region with the beam in a first direction at a first velocity, wherein the first velocity is selected such that the beam irradiates and forms the mixture of solid and liquid in the first portion of the first region, wherein said first portion of the first region upon cooling forms crystalline grains having predominantly the same crystallographic orientation in at least a single direction; and crystallizing at least the first portion of the first region using laser-induced melting.
摘要翻译：在一些实施例中，提供了一种处理膜的方法，所述方法包括限定多个间隔开的区域，以在膜内预结晶，膜设置在基板上并且能够激光诱导熔化; 产生具有能量密度的激光束，其被选择以在膜中形成固体和液体的混合物，并且其中一部分膜在照射区域中在其整个厚度上熔融; 将膜相对于激光束定位，以准备至少部分预结晶所述多个间隔开的区域的第一区域; 将激光束引导到激光束的路径中的移动的至少部分反射的光学元件上，移动的光学元件重定向光束，以便以第一速度沿第一方向用光束扫描第一区域的第一部分，其中所述第一速度被选择为使得所述光束在所述第一区域的所述第一部分中照射并形成固体和液体的混合物，其中所述第一区域的冷却时的所述第一部分形成具有主要相同的晶体取向的晶粒最少一个方向并且使用激光诱导熔化使至少第一区域的第一部分结晶。

8. 发明申请

WO2007022302A3 HIGH THROUGHPUT CRYSTALLIZATION OF THIN FILMS 审中-公开
公开(公告)号：WO2007022302A3
公开(公告)日：2007-02-22
申请号：PCT/US2006/032037
申请日：2006-08-16
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , IM, James, S.
发明人： IM, James, S.
IPC分类号： H01L21/20
摘要： Under one aspect, a method of processing a film includes defining a plurality of spaced-apart regions to be crystallized within a film, the film being disposed on a substrate and capable of laser-induced melting; generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a length and a width; continuously scanning the film in a first scan with a sequence of laser pulses at a velocity selected such that each pulse irradiates and melts a first portion of a corresponding spaced-apart region, wherein the first portion upon cooling forms one or more laterally grown crystals; and continuously scanning the film in a second time with a sequence of laser pulses at a velocity selected such that each pulse irradiates and melts a second portion of a corresponding spaced-apart region, wherein the first and second portions in each spaced-apart region partially overlap, and wherein the second portion upon cooling forms one or more laterally grown crystals that are extended relative to the one or more laterally grown crystals of the first portion.

9. 发明申请

WO2007022234A1 SYSTEMS AND METHODS FOR UNIFORM SEQUENTIAL LATERAL SOLIDIFICATION OF THIN FILMS USING HIGH FREQUENCY LASERS 审中-公开
标题翻译：用于使用高频激光器对薄膜进行统一的连续凝固的系统和方法
公开(公告)号：WO2007022234A1
公开(公告)日：2007-02-22
申请号：PCT/US2006/031929
申请日：2006-08-16
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK , IM, James, S.
发明人： IM, James, S.
IPC分类号： H01L21/20
CPC分类号： H01L27/1296 , B23K26/0622 , B23K26/073 , B23K26/0861 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要： Under one aspect, a method for processing a thin film includes generating a first set of shaped beamlets from a first laser beam pulse, each of the beamlets of the first set of beamlets having a length defining the y-direction, a width defining the x-direction, and a fluence that is sufficient to substantially melt a film throughout its thickness in an irradiated film region and further being spaced in the x-direction from adjacent beamlets of the first set of beamlets by gaps; irradiating a first region of the film with the first set of shaped beamlets to form a first set of molten zones which laterally crystallize upon cooling to form a first set of crystallized regions including crystal grains that are substantially parallel to the x-direction and having a length and width substantially the same as the length .and width of each of the shaped beamlets and being separated from adjacent crystallized regions by gaps substantially the same as the gaps separating the shaped beamlets; generating a second set of shaped beamlets from a second laser beam pulse, each beamlet of the second set of beamlets having a length, width, fluence, and spacing that is substantially the same as the length, width, fluence, and spacing of each beamlet of the first set of beamlets; and continuously scanning the film so as to irradiate a second region of the film with the second set of shaped beamlets to form a second set of molten zones that are displaced in the x-direction from the first set of crystallized regions, wherein at least one molten zone of the second set of molten zones partially overlaps at least one crystallized region of the first set of crystallized regions and crystallizes upon cooling to form elongations of crystals in said at least one crystallized region.
摘要翻译：在一个方面，一种用于处理薄膜的方法包括：从第一激光束脉冲产生第一组成形的子束，第一组子束的每个子束具有限定y的长度 - 方向，限定x方向的宽度以及充足的能量密度，该能量密度足以在辐射膜区域的整个厚度上基本上熔化膜，并且进一步在x方向上与第一组小射束的相邻小射束间隔开间隙 ; 用所述第一组成形的小束照射所述膜的第一区域以形成第一组熔融区域，所述第一组熔融区域在冷却时横向结晶以形成第一组结晶区域，所述第一组结晶区域包括晶粒，所述晶粒基本平行于所述x方向并且具有长度和宽度基本上与每个成形小射束的长度和宽度相同，并且通过与分隔成形小射束的间隙基本相同的间隙与相邻结晶区分开; 从第二激光束脉冲产生第二组成形的小束，第二组小束中的每一个小束具有与每个小束的长度，宽度，注量和间距基本相同的长度，宽度，注量和间距的第一组子束; 并且连续地扫描所述膜以便用所述第二组成形的小束照射所述膜的第二区域以形成从所述第一组结晶化区域沿x方向移位的第二组熔融区域，其中至少一个第二组熔融区的熔融区与第一组结晶区的至少一个结晶区部分重叠，并在冷却时结晶，以在所述至少一个结晶区中形成晶体伸长。

10. 发明申请

WO2006055003A1 SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED POLY-SILICON FILMS 审中-公开
标题翻译：用于创建晶体取向控制的聚硅膜的系统和方法
公开(公告)号：WO2006055003A1
公开(公告)日：2006-05-26
申请号：PCT/US2004/039055
申请日：2004-11-18
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OFNEW YORK , IM, James, S. , VAN DER WILT, Paul, Christian
发明人： IM, James, S. , VAN DER WILT, Paul, Christian
IPC分类号： H01L21/20 , B23K26/00
CPC分类号： H01L21/02609 , B23K26/0622 , B23K26/066 , C30B13/24 , H01L21/02595 , H01L21/02678 , H01L21/02686 , H01L21/2026
摘要： In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.
摘要翻译：根据一个方面，本发明提供了一种用于提供具有受控微结构以及结晶织构的多晶膜的方法。该方法提供具有特定结晶取向的细长晶粒或单晶岛。特别地，在衬底上处理膜的方法包括产生具有主要以一个优选结晶方向取向的晶粒的织构化膜; 然后使用顺序横向固化结晶产生微结构，其提供以优选结晶取向定向的晶粒的位置控制生长。

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