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1. 发明申请

WO2012050395A2 APPARATUS AND METHOD FOR RECEIVING MOBILE MESSAGE 审中-公开
标题翻译：用于接收移动信息的装置和方法
公开(公告)号：WO2012050395A2
公开(公告)日：2012-04-19
申请号：PCT/KR2011007671
申请日：2011-10-14
申请人： SAMSUNG ELECTRONICS CO LTD , PARK JAE-HYUN , JEONG EUI-HEON
发明人： PARK JAE-HYUN , JEONG EUI-HEON
IPC分类号： H04W4/12 , H04W52/02 , H04W88/02
CPC分类号： H04W4/14 , H04L51/04 , H04L51/24 , H04L51/38 , H04L67/26 , H04L69/14 , H04M3/42382 , H04M3/487 , H04W4/12
摘要： An apparatus for receiving a mobile message includes an SMS client for receiving a short message by using a short message service; an MM client for receiving a mobile message; and a push client for, when an arrival notification informing that the mobile message has arrived from a push server is received, informing the MM client that the mobile message has arrived and, when the MM client is turned off, waking the MM client, wherein, when the push client is turned off, the SMS client receives the arrival notification from the push server through a short message. The user can select a method of receiving the arrival notification of the mobile message from among an IP push manner and an SMS push manner according to a user's intention and it is possible to solve a problem about an excessive consumption of a battery, which is caused by a push client operated while always staying on in a system, in the conventional mobile message system and simultaneously a user demand for a basic mobile message service may be satisfied.
摘要翻译：一种用于接收移动消息的装置包括：SMS客户端，用于通过使用短消息服务来接收短消息; 用于接收移动消息的MM客户端; 以及推送客户机，当接收到通知来自推送服务器的移动消息已经到达的到达通知时，向MM客户端通知移动消息已经到达，并且当MM客户端被关闭时唤醒MM客户端，其中当推送客户端关闭时，SMS客户端通过短消息接收来自推送服务器的到达通知。用户可以根据用户的意图选择从IP推送方式和SMS推送方式接收移动消息的到达通知的方法，并且可以解决导致的电池过度消耗的问题通过在常规移动消息系统中始终保持在系统中的推送客户端操作，并且同时可以满足用户对基本移动消息服务的需求。

2. 发明专利

JP2006136000A Spread spectrum clock generator and method for generating spread spectrum clock signal 有权
标题翻译：传播频谱时钟发生器和用于产生传播频谱时钟信号的方法
公开(公告)号：JP2006136000A
公开(公告)日：2006-05-25
申请号：JP2005323908
申请日：2005-11-08
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SHIN JONG-SHIN , CHANG DUCK-HYUN , KIM JI-YOUNG , KWAK MYOUNG-BO , SEO IL-WON , KIM CHI-WON , KIM HYUN-GOO , PARK JAE-HYUN
IPC分类号： H03L7/22 , G06F1/04 , H03K7/06 , H03L7/087 , H03L7/18
CPC分类号： H03L7/18 , H03B23/00 , H03L7/0891
摘要： PROBLEM TO BE SOLVED: To provide a spread spectrum clock generator (SSCG) and a method for generating a spread spectrum clock (SSC) signal. SOLUTION: The SSCG may include a controller outputting a given modulation voltage signal on the basis of a difference between an average frequency of a first feedback signal and a comparison frequency signal inputted thereto, or on the basis of total phase variations between a second feedback signal and the comparison frequency signal, and a sub-system for generating a first control voltage as a function of an input reference frequency signal and a second feedback signal inputted thereto. An adder may add the first control voltage signal and the modulation voltage signal to generate a second control voltage signal, and a voltage control oscillator may generate the SSC signal on the basis of the second control voltage signal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供扩频时钟发生器（SSCG）和用于产生扩频时钟（SSC）信号的方法。解决方案：SSCG可以包括：控制器，其基于第一反馈信号的平均频率和输入到其的比较频率信号之间的差异，或者基于第一反馈信号的输入的比较频率信号之间的总相位变化，输出给定的调制电压信号第二反馈信号和比较频率信号，以及用于产生作为输入的参考频率信号和输入的第二反馈信号的函数的第一控制电压的子系统。加法器可以添加第一控制电压信号和调制电压信号以产生第二控制电压信号，并且压控振荡器可以基于第二控制电压信号产生SSC信号。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2008283179A Manufacturing method of phase transition memory element having self-aligned electrode 审中-公开
标题翻译：具有自对准电极的相位过渡记忆元件的制造方法
公开(公告)号：JP2008283179A
公开(公告)日：2008-11-20
申请号：JP2008117615
申请日：2008-04-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM JUNG-IN , OH JAE-HEE , KONG JUN-HYOK , PARK JAE-HYUN , LEE KWANG WOO
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/141 , H01L45/1683
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of phase transition memory element having self-aligned electrode. SOLUTION: An inter-layer insulating film having a contact hole is formed on a substrate. A phase transition pattern for partially filling the contact hole is formed. A self-aligned bit extending part is provided to the phase transition pattern to form a bit line traversing over the inter-layer insulating film. The bit extending part is extended to the inside of the contact hole over the phase transition pattern. The bit extending part is brought into contact with the phase transition pattern. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有自对准电极的相变存储元件的制造方法。解决方案：在基板上形成具有接触孔的层间绝缘膜。形成用于部分填充接触孔的相变图案。将自对准位延伸部分提供给相变图案以形成穿过层间绝缘膜的位线。钻头延伸部分在相变图案上延伸到接触孔的内部。位延伸部分与相变图案接触。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2006211673A Multiplexer for soft switching without phase jump and multiplexing method 审中-公开
标题翻译：用于软切换的多路复用器，无相位跳变和多路复用方法
公开(公告)号：JP2006211673A
公开(公告)日：2006-08-10
申请号：JP2006018033
申请日：2006-01-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SHIN JONG-SHIN , KIM JI-YOUNG , KWAK MYOUNG-BO , SEO IL-WON , KIM CHI-WON , KIM HYUN-GOO , PARK JAE-HYUN
IPC分类号： H03K17/693
CPC分类号： H03K17/693
摘要： PROBLEM TO BE SOLVED: To provide a multiplexer for soft switching without a phase jump, and a multiplexing method.
SOLUTION: The multiplexer comprises: a first inverter for inverting and outputting a first input signal; a second inverter for inverting and outputting a second input signal; a first transmission gate for transmitting the output signal of the first inverter to a common output terminal in response to a first control signal; a second transmission gate for transmitting the output signal of the second inverter to the common output terminal in response to a second control signal; and a third inverter for inverting and outputting a signal of the common output terminal, wherein the first control signal and the second control signal are non-overlapping signals which do not overlap with each other.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于没有相位跳变的软开关的多路复用器和多路复用方法。解决方案：多路复用器包括：第一反相器，用于反相并输出第一输入信号; 第二反相器，用于反相和输出第二输入信号; 第一传输门，用于响应于第一控制信号将第一反相器的输出信号发送到公共输出端; 第二传输门，用于响应于第二控制信号将第二反相器的输出信号发送到公共输出端; 以及第三反相器，用于反相和输出公共输出端子的信号，其中第一控制信号和第二控制信号是彼此不重叠的非重叠信号。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2010155234A Hydrocarbon reforming catalyst, manufacturing method thereof and fuel cell containing this catalyst 审中-公开
标题翻译：碳氢化合物改性催化剂，其制造方法和含有该催化剂的燃料电池
公开(公告)号：JP2010155234A
公开(公告)日：2010-07-15
申请号：JP2009293044
申请日：2009-12-24
申请人： Samsung Electronics Co Ltd , Samsung Sdi Co Ltd , 三星エスディアイ株式会社 , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE HYUN-CHUL , LEE DOOHWAN , PARK EUN-DUCK , LEE KANG-HEE , KIM YUN-HA , PARK JAE-HYUN
IPC分类号： B01J23/889 , H01M8/06
CPC分类号： H01M8/0618 , B01J23/78 , B01J23/83 , B01J23/835 , B01J23/8872 , B01J23/888 , B01J23/8892 , B01J23/8896 , B01J35/002 , B01J37/0205 , C01B3/40 , C01B3/48 , C01B2203/0233 , C01B2203/0283 , C01B2203/066 , C01B2203/1041 , C01B2203/1058 , C01B2203/1082 , C01B2203/1235 , H01M8/0625 , Y02P20/52 , Y02P70/56
摘要： PROBLEM TO BE SOLVED: To provide a hydrocarbon reforming catalyst, manufacturing method thereof and a fuel cell containing this catalyst. SOLUTION: This hydrocarbon reforming catalyst contains not less than one kind of oxide carrier 11 selected from the group consisting of Al 2 O 3 , SiO 2 , ZrO 2 , TiO 2 and yttria stabilized zirconia (YSZ); not less than one kind of a metallic oxide 13 selected from the group consisting of nickel, manganese oxide, tin oxide, cerium oxide, rhenium oxide, molybdenum oxide and tungsten oxide, these being supported by the oxide carrier 11 and an alkali metal and an alkaline earth metal 14. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供烃重整催化剂，其制造方法和含有该催化剂的燃料电池。解决方案：该烃重整催化剂含有不少于一种选自Al 2 O 3，SBO 2，SiO 2， / SB>，ZrO 2 ，TiO 2 SBB和氧化钇稳定氧化锆（YSZ）; 不少于一种选自镍，氧化锰，氧化锡，氧化铈，氧化铼，氧化钼和氧化钨的金属氧化物13，它们由氧化物载体11和碱金属和碱土金属14.版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2007005785A Phase-change memory cell having cell diode and bottom electrode self-aligned with each other, and manufacturing method thereof 审中-公开
标题翻译：具有单独二极管的相变存储单元和与每个其它单元自动对准的底电极及其制造方法
公开(公告)号：JP2007005785A
公开(公告)日：2007-01-11
申请号：JP2006150232
申请日：2006-05-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK JAE-HYUN , GO ZAIKI , LEE SE-HO , JEONG WON-CHEOL
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit device having a vertical diode.
SOLUTION: An integrated circuit device includes an integrated circuit substrate, and an insulating film formed on the integrated circuit substrate. A contact hole penetrates the insulating film. A vertical diode is provided in a lower region of the contact hole, and a bottom electrode is provided above the vertical diode in the contact hole. The bottom surface of the bottom electrode is positioned above the top surface of the vertical diode. The bottom electrode is self-aligned with the vertical diode. The top surface area of the bottom electrode is smaller than the horizontal section area of the contact hole. A method of manufacturing the integrated circuit device is also provided.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有垂直二极管的集成电路器件。解决方案：集成电路器件包括集成电路衬底和形成在集成电路衬底上的绝缘膜。接触孔穿透绝缘膜。在接触孔的下部区域设置有垂直二极管，在接触孔中的垂直二极管的上方设置有底部电极。底部电极的底表面位于垂直二极管的顶表面之上。底部电极与垂直二极管自对准。底部电极的顶表面积小于接触孔的水平截面面积。还提供了一种制造集成电路器件的方法。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007194638A Nonvolatile memory device, and method of manufacturing same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：JP2007194638A
公开(公告)日：2007-08-02
申请号：JP2007010593
申请日：2007-01-19
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： MOON JUNG-HO , KWON CHUL-SOON , YU JAE-MIN , PARK JAE-HYUN , JEONG YOUNG-CHEON , YOON IN-GU
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7885
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of operating more stably.
SOLUTION: The device comprises a source region formed in a semiconductor substrate, a gate insulating film formed so as to overlap with part of the source region, a floating gate having a structure for forming an electric field constantly in a region that overlaps with the source region and formed on the upper part of the gate insulating film, a control gate formed in an insulating state along one sidewall of the floating gate from the upper part of the floating gate, an insulating film between gates interposed between the floating gate and the control gate, and a drain region formed adjacent to the other side of the control gate.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够更稳定地操作的非易失性存储器件。解决方案：该器件包括形成在半导体衬底中的源极区域，形成为与源极区域的一部分重叠的栅极绝缘膜，具有用于在重叠的区域中恒定形成电场的结构的浮动栅极与源极区域形成并形成在栅极绝缘膜的上部;控制栅极，其从浮置栅极的上部沿着浮置栅极的一个侧壁形成绝缘状态;栅极之间的绝缘膜，位于浮置栅极之间; 和控制栅极，以及与控制栅极的另一侧相邻形成的漏极区域。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006065331A Apparatus and method for controlling music play in mobile communication terminal 审中-公开
标题翻译：用于控制移动通信终端中的音乐播放的装置和方法
公开(公告)号：JP2006065331A
公开(公告)日：2006-03-09
申请号：JP2005245033
申请日：2005-08-25
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： HAN MYOUNG-HWAN , HWANG BYEONG-CHEOL , PARK JAE-HYUN , KANG MYUNG-JI , YI SUN-YOUNG , SHIN SEUNG-WOO , YUN JOONG-SAM , SEO JIN-GYU , KIM JA-YOUNG
IPC分类号： G10H1/00 , H04M1/00 , H04Q7/38
CPC分类号： G10H1/0008 , G10H2220/201 , G10H2220/395 , H04M1/72558 , H04M2250/12
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for controlling music play in a mobile communication terminal. SOLUTION: An apparatus for controlling music play in the mobile communication terminal is characterized in including; a motion recognition sensor unit for a motion of the mobile communication terminal and outputting detection signals; a sound source chip for outputting sound; and a controller for receiving the detection signals from the motion recognition sensor unit, calculating motion values of the mobile communication terminal, and controlling the sound source chip to output sounds dependent on the calculated motion values. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于控制移动通信终端中的音乐播放的装置和方法。解决方案：用于在移动通信终端中控制音乐播放的装置的特征在于包括：运动识别传感器单元，用于移动通信终端的运动并输出检测信号; 用于输出声音的声源芯片; 以及控制器，用于从运动识别传感器单元接收检测信号，计算移动通信终端的运动值，并根据计算的运动值控制声源芯片输出声音。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2007184591A Phase change storage element including contact with multi-bit cell and diameter to be adjusted therein, its manufacturing method, and its program method 有权
标题翻译：相变存储元件，包括与要调整的多位单元和直径的接触，其制造方法及其程序方法
公开(公告)号：JP2007184591A
公开(公告)日：2007-07-19
申请号：JP2006346152
申请日：2006-12-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEONG WON-CHEOL , KIM HYUNG-JUN , LEE SE-HO , PARK JAE-HYUN , JEONG CHANG-WOOK
IPC分类号： H01L27/105 , G11C13/00 , H01L45/00
摘要： PROBLEM TO BE SOLVED: To provide a phase change storage element including a contact where a multi-bit cell and a diameter are adjustable, and to provide its manufacturing method, and its program method. SOLUTION: The phase change storage element includes a chalcogenide element containing substance to be changed into a crystalline state or amorphous state with the impression of a heating current. The first contact is connected to the first region of a chalcogenide element so as to have a first cross sectional region. The second contact is connected to the second region of the chalcogenide element so as to have a second cross sectional region. The first programmable region of the chalcogenide substance is limited within the first region of the chalcogenide element and the state of the first programmable region is programmed by resistance related to the first contact. The second programmable region of the chalcogenide substance is limited within the second region of the chalcogenide element and the state of the second programmable region is programmed by resistance related to the second contact. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括多位单元和直径可调的接点的相变存储元件，并提供其制造方法及其程序方法。解决方案：相变存储元件包括硫族化物元素，其含有待加热电流的变形为结晶状态或非晶状态的物质。第一触点连接到硫族化物元件的第一区域以具有第一横截面区域。第二接触件连接到硫族化物元件的第二区域以具有第二横截面区域。硫族化物物质的第一可编程区域被限制在硫族化物元素的第一区域内，并且通过与第一接触相关的电阻对第一可编程区域的状态进行编程。硫族化物物质的第二可编程区域在硫族化物元素的第二区域内被限制，并且通过与第二接触相关的电阻对第二可编程区域的状态进行编程。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006054046A Method of operating magnetic ram device using spin injection, and magnetic ram device 有权
标题翻译：使用旋转注射操作磁性RAM器件的方法和磁性RAM器件
公开(公告)号：JP2006054046A
公开(公告)日：2006-02-23
申请号：JP2005234722
申请日：2005-08-12
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEONG WON-CHEOL , KIM KI-NAM , JEONG HONG-SIK , JEONG GI-TAE , PARK JAE-HYUN
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide a method for operating a magnetic RAM device including a memory cell having a magnetic tunnel junction structure on a substrate. SOLUTION: The method is provided for operating the magnetic RAM device including the memory cell having the magnetic tunnel junction structures 41a, 41b on the substrate 1. The method includes steps of: impressing a writing current pulse through the magnetic tunnel junction structures 41a, 41b; and impressing a writing magnetic field pulse onto the magnetic tunnel junction structures, wherein at least a portion of the writing magnetic field pulse is overlapping in time with respect to at least a portion of the writing current pulse. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种在基板上操作包括具有磁性隧道结结构的存储单元的磁性RAM器件的方法。解决方案：提供了用于操作包括在衬底1上具有磁性隧道结结构41a，41b的存储单元的磁性RAM器件的方法。该方法包括以下步骤：通过磁性隧道结结构施加写入电流脉冲 41a，41b; 并将写入磁场脉冲施加到磁性隧道结结构上，其中写入磁场脉冲的至少一部分相对于写入电流脉冲的至少一部分在时间上重叠。版权所有（C）2006，JPO＆NCIPI

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