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1. 发明授权

US09318589B2 Insulated gate bipolar transistor 有权
标题翻译：绝缘栅双极晶体管
公开(公告)号：US09318589B2
公开(公告)日：2016-04-19
申请号：US13751916
申请日：2013-01-28
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jaehoon Park , Chang Su Jang , In Hyuk Song , Kee Ju Um , Dong Soo Seo
IPC分类号： H01L29/739 , H01L29/10
CPC分类号： H01L29/7397 , H01L29/1095
摘要： There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area; a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction; a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas, insulation layers formed inside the trenches; gate electrodes buried inside the insulation layers; and a barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area.
摘要翻译：提供了一种绝缘栅双极晶体管，包括：第一导电类型的第一半导体区域; 形成在第一半导体区域的一个表面上的第二导电类型的第二半导体区域; 在第二半导体区域的一个表面上沿长度方向连续形成的第一导电类型的第三半导体区域; 多个沟槽，形成在第三半导体区域之间，延伸到第二半导体区域的内部，并且在长度方向上是连续的; 形成在第三半导体区域的一个表面上的第二导电类型的第四半导体区域，形成在沟槽内的绝缘层; 掩埋在绝缘层内的栅电极; 以及形成在与所述第二半导体区域内的所述第三半导体区域对应的位置中的至少一个的阻挡层。

2. 发明申请

US20150187678A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20150187678A1
公开(公告)日：2015-07-02
申请号：US14270894
申请日：2014-05-06
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Jae Hoon PARK , Sun Jae Yoon , Chang Su Jang , Kee Ju Um , In Hyuk Song
IPC分类号： H01L23/373
CPC分类号： H01L23/367 , H01L29/0834 , H01L29/7397 , H01L29/7813 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A power semiconductor device may include: a first conductivity-type first semiconductor layer; a second conductivity-type second semiconductor layer disposed above the first semiconductor layer; and a heat dissipation trench disposed to penetrate from an upper surface of the second semiconductor layer into a portion of the second semiconductor layer and having an insulating layer disposed on a surface thereof.
摘要翻译：功率半导体器件可以包括：第一导电型第一半导体层; 设置在所述第一半导体层上方的第二导电型第二半导体层; 以及散热沟，其设置成从所述第二半导体层的上表面穿透到所述第二半导体层的一部分中，并且具有设置在其表面上的绝缘层。

3. 外观设计

USD719926S1 Semiconductor device 有权
公开(公告)号：USD719926S1
公开(公告)日：2014-12-23
申请号：US29450511
申请日：2013-03-18
申请人： Samsung Electro-Mechanics Co., Ltd.
设计人： Young Ho Sohn , Si Joong Yang , Young Ki Lee , Jin Su Kim , Dong Hwan Kim , Jong Man Kim , Kee Ju Um , Hyo Jin Lee , Young Hoon Kwak

4. 发明授权

US09281389B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09281389B2
公开(公告)日：2016-03-08
申请号：US13758917
申请日：2013-02-04
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , In Hyuk Song , Dong Soo Seo , Kwang Soo Kim , Kee Ju Um
IPC分类号： H01L29/15 , H01L29/778 , H01L29/06 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/0634 , H01L29/2003
摘要： Disclosed herein is a semiconductor device including: a source electrode formed on one side of an N-type AlGaN layer; N-type and P-type AlGaN layers formed on the other side of the P-type AlGaN layer and formed in a direction perpendicular to the source electrode; a gate electrode formed on one side of the N-type and P-type AlGaN layers; and a drain electrode formed on the other side of the N-type and P-type AlGaN layers.
摘要翻译：本发明公开了一种半导体器件，包括：形成在N型AlGaN层一侧的源电极; 在P型AlGaN层的另一侧形成并且沿垂直于源电极的方向形成的N型和P型AlGaN层; 形成在N型和P型AlGaN层一侧的栅电极; 以及形成在N型和P型AlGaN层的另一侧的漏电极。

5. 发明申请

US20150060999A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20150060999A1
公开(公告)日：2015-03-05
申请号：US14451030
申请日：2014-08-04
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Dong Soo SEO , Jae Hoon Park , In Hyuk Song , Ji Yeon Oh , Kee Ju Um
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0878 , H01L29/42376 , H01L29/435 , H01L29/4983 , H01L29/7813
摘要： A power semiconductor device may include: a drift layer having a first conductivity; a hole accumulating layer formed on the drift layer and having the first conductivity; a well layer formed on the hole accumulating layer and having a second conductivity; an emitter region formed in an internal portion of an upper portion of the well layer and having the first conductivity; and trench gates penetrating through the emitter region, the well layer, and the hole accumulating layer, and having a gate insulating layer formed on a surface thereof. The trench gate may be sequentially divided into a first gate part, a second gate part, and a third gate part from an upper portion thereof depending on a height of a material filled in the trench gate, the first to third gate parts having different resistances from each other.
摘要翻译：功率半导体器件可以包括：具有第一导电性的漂移层; 形成在漂移层上并具有第一导电性的孔积聚层; 形成在所述蓄积层上并具有第二导电性的阱层; 发射极区，形成在所述阱层的上部的内部，并具有第一导电性; 以及穿过发射极区域，阱层和空穴积聚层的沟槽栅极，并且在其表面上形成栅极绝缘层。沟槽栅极可以根据填充在沟槽栅极中的材料的高度从其上部依次分为第一栅极部分，第二栅极部分和第三栅极部分，第一至第三栅极部分具有不同的电阻从彼此。

6. 外观设计

USD719113S1 Semiconductor device 有权
公开(公告)号：USD719113S1
公开(公告)日：2014-12-09
申请号：US29450491
申请日：2013-03-18
申请人： Samsung Electro-Mechanics Co., Ltd.
设计人： Young Ho Sohn , Si Joong Yang , Young Ki Lee , Jin Su Kim , Dong Hwan Kim , Jong Man Kim , Kee Ju Um , Hyo Jin Lee , Young Hoon Kwak

7. 发明申请

US20140117373A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140117373A1
公开(公告)日：2014-05-01
申请号：US13758917
申请日：2013-02-04
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , In Hyuk Song , Dong Soo Seo , Kwang Soo Kim , Kee Ju Um
IPC分类号： H01L29/78 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/0634 , H01L29/2003
摘要： Disclosed herein is a semiconductor device including: a source electrode formed on one side of an N-type AlGaN layer; N-type and P-type AlGaN layers formed on the other side of the P-type AlGaN layer and formed in a direction perpendicular to the source electrode; a gate electrode formed on one side of the N-type and P-type AlGaN layers; and a drain electrode formed on the other side of the N-type and P-type AlGaN layers.
摘要翻译：本发明公开了一种半导体器件，包括：形成在N型AlGaN层一侧的源电极; 在P型AlGaN层的另一侧形成并且沿垂直于源电极的方向形成的N型和P型AlGaN层; 形成在N型和P型AlGaN层一侧的栅电极; 以及形成在N型和P型AlGaN层的另一侧的漏电极。

8. 发明授权

US09318599B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US09318599B2
公开(公告)日：2016-04-19
申请号：US14331603
申请日：2014-07-15
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Jae Kyu Sung , Jae Hoon Park , Kee Ju Um , In Hyuk Song
IPC分类号： H01L29/78 , H01L29/423 , H01L29/10 , H01L29/06
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0649 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/7397
摘要： A power semiconductor device may include: a first conductive type drift layer in which trench gates are formed; a second conductive type well region formed on the drift layer so as to contact the trench gate; a first conductive type source region formed on the well region so as to contact the trench gate; and a device protection region formed below a height of a lowermost portion of the source region in a height direction.
摘要翻译：功率半导体器件可以包括：形成有沟槽栅极的第一导电型漂移层; 形成在所述漂移层上以与所述沟槽栅极接触的第二导电类型阱区; 形成在所述阱区上以便与所述沟槽栅极接触的第一导电型源极区; 以及在高度方向上形成在源极区域的最下部的高度以下的器件保护区域。

9. 发明授权

US09184247B2 Power semiconductor device capable of maintaining a withstand voltage 有权
标题翻译：能够保持耐压的功率半导体器件
公开(公告)号：US09184247B2
公开(公告)日：2015-11-10
申请号：US13795858
申请日：2013-03-12
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Kee Ju Um , Chang Su Jang , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/732 , H01L29/739 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/06
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/41741 , H01L29/66348 , H01L29/7397
摘要： Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer.
摘要翻译：这里公开了功率半导体器件。功率半导体器件包括形成为与第二导电类型阱层的一侧接触的第二导电型第一结端接延伸（JTE）层，形成在其上的第二导电型第二JTE层线作为第二导电型第一JTE层，并且形成为在基板的长度方向上与第二导电型第一JTE层间隔开，并且形成为与第二导电型第一JTE层接触的多晶硅层第二导电类型阱层和第二导电型第一JTE层的上部。

10. 发明授权

US09153678B2 Power semiconductor device and method of manufacturing the same 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US09153678B2
公开(公告)日：2015-10-06
申请号：US13871082
申请日：2013-04-26
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kee Ju Um , In Hyuk Song , Chang Su Jang , Jaehoon Park , Dong Soo Seo
IPC分类号： H01L29/78 , H01L29/66 , H01L29/739 , H01L29/06
CPC分类号： H01L29/7397 , H01L29/0615 , H01L29/0619 , H01L29/0688 , H01L29/0847 , H01L29/1095 , H01L29/42372 , H01L29/4238 , H01L29/66348
摘要： There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion.
摘要翻译：提供了一种功率半导体器件，包括形成在有源区中的触点，从第一区延伸形成第一终端区并与触点交替形成的沟槽栅，形成在有源区的触点和沟槽栅极，形成在第一端接区域中的第一导电阱延伸部分和第二端接区域的一部分，以及形成在第二端接区域中并接触阱延伸部分的第一导电场限制环。

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