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1. 发明授权

US09281389B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09281389B2
公开(公告)日：2016-03-08
申请号：US13758917
申请日：2013-02-04
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , In Hyuk Song , Dong Soo Seo , Kwang Soo Kim , Kee Ju Um
IPC分类号： H01L29/15 , H01L29/778 , H01L29/06 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/0634 , H01L29/2003
摘要： Disclosed herein is a semiconductor device including: a source electrode formed on one side of an N-type AlGaN layer; N-type and P-type AlGaN layers formed on the other side of the P-type AlGaN layer and formed in a direction perpendicular to the source electrode; a gate electrode formed on one side of the N-type and P-type AlGaN layers; and a drain electrode formed on the other side of the N-type and P-type AlGaN layers.
摘要翻译：本发明公开了一种半导体器件，包括：形成在N型AlGaN层一侧的源电极; 在P型AlGaN层的另一侧形成并且沿垂直于源电极的方向形成的N型和P型AlGaN层; 形成在N型和P型AlGaN层一侧的栅电极; 以及形成在N型和P型AlGaN层的另一侧的漏电极。

2. 发明授权

US09076660B2 Power module package 有权
标题翻译：电源模块封装
公开(公告)号：US09076660B2
公开(公告)日：2015-07-07
申请号：US14103574
申请日：2013-12-11
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Tae Hyun Kim , Kwang Soo Kim , Sun Woo Yun , Young Ki Lee , Do Jae Yoo
IPC分类号： H01L23/12 , H01L23/34 , H01L23/053 , H01L23/373
CPC分类号： H01L23/053 , H01L23/3735 , H01L24/73 , H01L2224/32225 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： Disclosed herein is a power module package including: a first module configured of a first substrate having one surface and the other surface, a first semiconductor chip mounted on one surface of the first substrate, and a first sealing member formed to cover the first semiconductor chip mounted on one surface of the first substrate from both sides in a thickness direction of the first substrate and expose the other surface of the first substrate; and a case enclosing the first module.
摘要翻译：本文公开了一种功率模块封装，包括：第一模块，其由具有一个表面和另一个表面的第一衬底构成，安装在第一衬底的一个表面上的第一半导体芯片和形成为覆盖第一半导体芯片的第一密封构件在第一基板的厚度方向上从两侧安装在第一基板的一个表面上，并露出第一基板的另一个表面; 以及包围第一模块的壳体。

3. 发明申请

US20140177288A1 FLYBACK CONVERTER 有权
标题翻译： FLYBACK转换器
公开(公告)号：US20140177288A1
公开(公告)日：2014-06-26
申请号：US13794036
申请日：2013-03-11
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Wha Jeong , Bum Seok Suh , Kwang Soo Kim
IPC分类号： H02M3/335
CPC分类号： H02M3/285 , H02M3/33507 , H02M3/33569
摘要： There is provided a flyback converter, including: a power supply unit supplying input power; a transformer unit including first and second transformers converting first and second primary current from the power supply unit into first and second secondary current, respectively; a main switch unit including first and second main switches respectively intermitting the first and second primary current flowing in respective primary windings of the first and second transformers; an auxiliary switch unit including first and second auxiliary switches forming respective transfer paths for dump power present before the first and second main switches are switched on; and an auxiliary inductor unit including first and second auxiliary inductors respectively adjusting the amount of current flowing in the first and second auxiliary switches during the switching operation thereof, wherein the first and second main switches perform a switching operation while having a predetermined phase difference therebetween.
摘要翻译：提供了一种反激转换器，包括：提供输入功率的电源单元; 变压器单元，包括分别将第一和第二初级电流从电源单元转换成第一和第二次级电流的第一和第二变压器; 主开关单元包括分别中断在第一和第二变压器的相应初级绕组中流动的第一和第二初级电流的第一和第二主开关; 辅助开关单元，包括第一和第二辅助开关，其形成用于在第一和第二主开关之前存在的倾卸电力的各个传送路径; 以及辅助电感器单元，其包括第一和第二辅助电感器，其分别在其开关操作期间调节在第一和第二辅助开关中流动的电流量，其中第一和第二主开关在它们之间具有预定的相位差的同时进行开关操作。

4. 发明申请

US20140117408A1 UNIT POWER MODULE AND POWER MODULE PACKAGE COMPRISING THE SAME 有权
标题翻译：单元功率模块和功率模块包装盒
公开(公告)号：US20140117408A1
公开(公告)日：2014-05-01
申请号：US13782859
申请日：2013-03-01
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD
发明人： Tae Hyun Kim , Bum Seok Suh , Do Jae Yoo , Kwang Soo Kim
IPC分类号： H01L27/07
CPC分类号： H01L24/34 , H01L24/33 , H01L24/36 , H01L24/40 , H01L24/41 , H01L2224/40095 , H01L2224/40137 , H01L2224/83801 , H01L2224/84801 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： Disclosed herein is a unit power module including: a first semiconductor chip having one surface on which a 1-1-th electrode and a 1-2-th electrode spaced apart from the 1-1-th electrode are formed and the other surface on which a 1-3-th electrode is formed, a second semiconductor chip having one surface on which a 2-1-th electrode is formed and the other surface on which a 2-2-th electrode is formed, a first metal plate contacting the 1-1-th electrode of the first semiconductor chip and the 2-1-th electrode of the second semiconductor chip, a second metal plate contacting the 1-2-th electrode of the first semiconductor chip and spaced apart from the first metal plate, a third metal plate contacting the 1-3-th electrode of the first semiconductor chip and the 2-2-th electrode of the second semiconductor chip, and a sealing member formed to surround the first metal plate, the second metal plate, and the third metal plate.
摘要翻译：这里公开了一种单位功率模块，包括：第一半导体芯片，其具有一个表面，其上形成有与第1-1电极间隔开的第1-1电极和第1-2电极，另一个表面在形成有第1-3电极的第二半导体芯片，形成有第2-1电极的一个表面的第二半导体芯片和形成有第2-2电极的另一表面，第一金属板接触第一半导体芯片的第1-1电极和第二半导体芯片的第2-1电极，与第一半导体芯片的第1-2电极接触并与第一半导体芯片间隔开的第二金属板与第一半导体芯片的第1-3电极和第二半导体芯片的第2-2电极接触的第三金属板和形成为围绕第一金属板，第二金属板，和第三金属板。

5. 发明申请

US20140117373A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140117373A1
公开(公告)日：2014-05-01
申请号：US13758917
申请日：2013-02-04
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , In Hyuk Song , Dong Soo Seo , Kwang Soo Kim , Kee Ju Um
IPC分类号： H01L29/78 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/0634 , H01L29/2003
摘要： Disclosed herein is a semiconductor device including: a source electrode formed on one side of an N-type AlGaN layer; N-type and P-type AlGaN layers formed on the other side of the P-type AlGaN layer and formed in a direction perpendicular to the source electrode; a gate electrode formed on one side of the N-type and P-type AlGaN layers; and a drain electrode formed on the other side of the N-type and P-type AlGaN layers.
摘要翻译：本发明公开了一种半导体器件，包括：形成在N型AlGaN层一侧的源电极; 在P型AlGaN层的另一侧形成并且沿垂直于源电极的方向形成的N型和P型AlGaN层; 形成在N型和P型AlGaN层一侧的栅电极; 以及形成在N型和P型AlGaN层的另一侧的漏电极。

6. 发明申请

US20130337613A1 POWER MODULE PACKAGE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20130337613A1
公开(公告)日：2013-12-19
申请号：US13973644
申请日：2013-08-22
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kwang Soo Kim , Young Ki Lee , Seog Moon Choi , Jin Suk Son
IPC分类号： H01L21/50
CPC分类号： H01L21/50 , H01L21/565 , H01L23/24 , H01L23/3107 , H01L23/4334 , H01L23/49537 , H01L23/49575 , H01L23/49586 , H01L24/73 , H01L25/072 , H01L2224/32245 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00012 , H01L2924/00
摘要： Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and second lead frames; and semiconductor devices mounted on second surfaces of the first and second lead frames.

7. 发明授权

US09356116B2 Power semiconductor device and method of fabricating the same 有权
标题翻译：功率半导体装置及其制造方法
公开(公告)号：US09356116B2
公开(公告)日：2016-05-31
申请号：US13890680
申请日：2013-05-09
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jaehoon Park , In Hyuk Song , Dong Soo Seo , Kwang Soo Kim , Kee Ju Um
IPC分类号： H01L29/66 , H01L29/739 , H01L27/088 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/768 , H01L29/78 , H01L51/05 , H01L27/08 , H01L27/092 , H01L31/111
CPC分类号： H01L29/66348 , H01L27/0817 , H01L27/088 , H01L27/0921 , H01L29/0847 , H01L29/1033 , H01L29/1079 , H01L29/41733 , H01L29/4232 , H01L29/66325 , H01L29/66333 , H01L29/66477 , H01L29/66484 , H01L29/66954 , H01L29/7393 , H01L29/7397 , H01L29/768 , H01L29/78 , H01L31/111 , H01L31/1113 , H01L51/0512
摘要： There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer, a first conductive type emitter layer formed in the body layer and formed to be spaced apart from the first gate, a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate, and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer.
摘要翻译：提供了一种功率半导体器件，包括第一导电型漂移层; 形成在漂移层上的第二导电型体层，形成在漂移层下面的第二导电型集电极层; 通过贯穿本体层和漂移层的一部分而形成的第一栅极，形成在主体层中并形成为与第一栅极间隔开的第一导电型发射极层，覆盖主体层的上部的第二栅极和发射极层，并且在第一栅极上形成为平面型栅极，以及在第一和第二栅极的接触表面之间形成的偏析阻挡层，其具有主体层，发射极层和漂移层。

8. 发明授权

US09318423B2 Leadless package type power semiconductor module 有权
标题翻译：无铅封装型功率半导体模块
公开(公告)号：US09318423B2
公开(公告)日：2016-04-19
申请号：US14572763
申请日：2014-12-16
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kwang Soo Kim , Kee Ju Um , Suk Ho Lee , Joon Seok Chae
IPC分类号： H01L23/495 , H01L23/02 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , H01L25/18 , H01L23/31
CPC分类号： H01L23/49548 , H01L23/3107 , H01L23/49531 , H01L23/49537 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/48 , H01L24/49 , H01L25/18 , H01L2224/48091 , H01L2224/48106 , H01L2224/48108 , H01L2224/48137 , H01L2224/48145 , H01L2224/48177 , H01L2224/49171 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： There is provided a leadless package type power semiconductor module. According to an exemplary embodiment of the present disclosure, the leadless package type power semiconductor module includes: connection terminals of a surface mounting type (SMT) formed at edges at which respective sides of four surfaces meet each other; a first mounting area connected to the connection terminals through a bridge to be disposed at a central portion thereof and mounted with power devices or control ICs electrically connected to the power devices to control the power devices; and second mounting areas formed between the connection terminals and mounted with the power devices or the control ICs, wherein the first mounting area is disposed at a different height from the second mounting area through the bridge to generate a phase difference from the second mounting area. Therefore, it is possible to implement a high-integration, high-performance, and small power semiconductor module by applying a three-dimensional structure deviating from a one-dimensional flat structure.
摘要翻译：提供无引线封装型功率半导体模块。根据本公开的示例性实施例，无引线封装型功率半导体模块包括：形成在四个表面的相应边缘彼此相遇的边缘处的表面安装型（SMT）的连接端子; 第一安装区域，其通过桥接器连接到连接端子，以布置在其中心部分，并安装有电连接到电力设备的功率器件或控制IC以控制功率器件; 以及形成在所述连接端子之间并且安装有所述功率器件或所述控制IC的第二安装区域，其中所述第一安装区域设置在与所述第二安装区域不同的高度，以通过所述桥接器产生与所述第二安装区域的相位差。因此，可以通过应用偏离一维平面结构的三维结构来实现高集成度，高性能和小功率半导体模块。

9. 发明授权

US09318352B2 Power module package and method for manufacturing the same 有权
标题翻译：电源模块封装及其制造方法
公开(公告)号：US09318352B2
公开(公告)日：2016-04-19
申请号：US13973644
申请日：2013-08-22
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kwang Soo Kim , Young Ki Lee , Seog Moon Choi , Jin Suk Son
IPC分类号： H01L23/495 , H01L25/07 , H01L21/50 , H01L23/433 , H01L23/24 , H01L23/31 , H01L21/56
CPC分类号： H01L21/50 , H01L21/565 , H01L23/24 , H01L23/3107 , H01L23/4334 , H01L23/49537 , H01L23/49575 , H01L23/49586 , H01L24/73 , H01L25/072 , H01L2224/32245 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00012 , H01L2924/00
摘要： Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and second lead frames; and semiconductor devices mounted on second surfaces of the first and second lead frames.
摘要翻译：这里公开了功率模块封装及其制造方法。功率模块封装包括彼此相对设置的第一和第二引线框架; 形成在所述第一引线框架和所述第二引线框架中的两个或第二引线框架中的一个的一个第一表面的一部分上; 以及安装在第一和第二引线框架的第二表面上的半导体器件。

10. 发明授权

US09270197B2 Power factor correction apparatus and method for correcting power factor using the same 有权
标题翻译：功率因数校正装置及其功率因数校正方法
公开(公告)号：US09270197B2
公开(公告)日：2016-02-23
申请号：US13862131
申请日：2013-04-12
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： In Wha Jeong , Bum Seok Suh , Kwang Soo Kim
IPC分类号： H02M7/06 , H02M1/42 , H02M3/158
CPC分类号： H02M7/066 , H02M1/4225 , H02M3/158 , H02M3/1584 , Y02B70/126
摘要： There are provided a power factor correction device and a method for controlling power factor correction using the same. The power factor correction device includes a power factor correction circuit and a control circuit. The power factor correction circuit includes first and second inductors connected to an input power source stage and first and second main switches performing a switching operation on the first and second inductors, respectively. The control circuit may provide control signals to the first and second main switches, respectively, and when phase currents flowing in the respective first and second inductors are unbalanced, the control circuit may change a phase of at least one of the first and second main switches to correct an imbalance of the phases.
摘要翻译：提供了功率因数校正装置和使用其进行功率因数校正的方法。功率因数校正装置包括功率因数校正电路和控制电路。功率因数校正电路包括连接到输入电源级的第一和第二电感器以及分别对第一和第二电感器执行开关操作的第一和第二主开关。控制电路可以分别向第一和第二主开关提供控制信号，并且当在相应的第一和第二电感器中流动的相电流不平衡时，控制电路可以改变第一和第二主开关中的至少一个的相位纠正阶段的不平衡。

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