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1. 发明申请

US20120021570A1 METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成微晶半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20120021570A1
公开(公告)日：2012-01-26
申请号：US13184589
申请日：2011-07-18
申请人： Ryota TAJIMA , Tetsuhiro TANAKA , Takashi OHTSUKI , Ryo TOKUMARU , Yuji EGI , Erika KATO , Miyako MORIKUBO
发明人： Ryota TAJIMA , Tetsuhiro TANAKA , Takashi OHTSUKI , Ryo TOKUMARU , Yuji EGI , Erika KATO , Miyako MORIKUBO
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/78696 , C30B25/105 , C30B25/183 , C30B29/06 , C30B29/08 , H01L29/04 , H01L29/78618 , H01L29/78648
摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.
摘要翻译：在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至填充混合晶粒之间的空间。在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

2. 发明申请

US20120208360A1 METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20120208360A1
公开(公告)日：2012-08-16
申请号：US13368379
申请日：2012-02-08
申请人： Tetsuhiro TANAKA , Ryo TOKUMARU , Takashi OHTSUKI , Ryota TAJIMA , Erika KATO
发明人： Tetsuhiro TANAKA , Ryo TOKUMARU , Takashi OHTSUKI , Ryota TAJIMA , Erika KATO
IPC分类号： H01L21/336 , H01L21/3065
CPC分类号： H01L29/66765 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L29/04 , H01L29/78648 , H01L29/78696
摘要： A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.
摘要翻译：使用等离子体CVD装置在基板上形成微晶半导体膜，所述等离子体CVD装置包括反应室，使得将沉积气体和氢气供应到反应室中，其中基板设置在第一电极和第二电极之间; 并且通过向第一电极提供高频电力而在反应室中产生等离子体。注意，在等离子体产生的区域中与衬底的端部重叠的区域中的等离子体密度设定为高于在位于更内侧的区域中的等离子体密度使得微结晶半导体膜形成在位于比衬底的端部更靠内侧的区域上。

3. 发明申请

US20110053358A1 METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造微晶半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20110053358A1
公开(公告)日：2011-03-03
申请号：US12860175
申请日：2010-08-20
申请人： Satoshi TORIUMI , Ryota TAJIMA , Takashi OHTSUKI , Tetsuhiro TANAKA , Ryo TOKUMARU , Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI , Toshiya ENDO , Shunpei YAMAZAKI
发明人： Satoshi TORIUMI , Ryota TAJIMA , Takashi OHTSUKI , Tetsuhiro TANAKA , Ryo TOKUMARU , Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI , Toshiya ENDO , Shunpei YAMAZAKI
IPC分类号： H01L21/20
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/45565 , C23C16/45574 , C23C16/5096 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/0262 , H01L29/66765 , H01L29/78696
摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.
摘要翻译：本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

4. 发明申请

US20110020989A1 METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：形成微晶半导体膜的方法和制造薄膜晶体管的方法
公开(公告)号：US20110020989A1
公开(公告)日：2011-01-27
申请号：US12838023
申请日：2010-07-16
申请人： Ryota TAJIMA , Tetsuhiro TANAKA , Ryo TOKUMARU , Hidekazu MIYAIRI , Mitsuhiro ICHIJO , Taichi NOZAWA
发明人： Ryota TAJIMA , Tetsuhiro TANAKA , Ryo TOKUMARU , Hidekazu MIYAIRI , Mitsuhiro ICHIJO , Taichi NOZAWA
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/28 , C23C16/45523 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L29/78669 , H01L29/78678 , H01L29/78684
摘要： A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.
摘要翻译：形成具有高结晶度的微晶半导体膜。此外，具有优选的电特性和高可靠性的薄膜晶体管和包括薄膜晶体管的显示装置以高生产率制造。以第一流量引入包含硅或锗的沉积气体的步骤，并且以固定速率引入氢气，并且以固定速率引入氢气，并且以第二流量引入含有硅或锗的沉积气体的步骤，从而将含有硅或锗的氢气和沉积气体混合，供给高频电力。因此，在基板上形成微晶半导体膜。

5. 发明申请

US20130071762A1 POWER STORAGE DEVICE 有权
公开(公告)号：US20130071762A1
公开(公告)日：2013-03-21
申请号：US13610951
申请日：2012-09-12
申请人： Ryota TAJIMA , Shunpei Yamazaki , Teppei Oguni , Takeshi Osada , Shinya Sasagawa , Kazutaka Kuriki
发明人： Ryota TAJIMA , Shunpei Yamazaki , Teppei Oguni , Takeshi Osada , Shinya Sasagawa , Kazutaka Kuriki
IPC分类号： H01M4/583 , H01M8/22 , H01M4/64 , B82Y99/00 , B82Y30/00
CPC分类号： H01M4/133 , B82Y30/00 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/625 , H01M10/0525 , H01M10/465 , Y02E60/122 , Y02T10/7011
摘要： A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

6. 发明申请

US20130071751A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20130071751A1
公开(公告)日：2013-03-21
申请号：US13613013
申请日：2012-09-13
申请人： Ryota TAJIMA , Takeshi OSADA
发明人： Ryota TAJIMA , Takeshi OSADA
IPC分类号： H01M4/66 , H01M4/583
CPC分类号： H01M4/134 , H01G11/26 , H01G11/36 , H01G11/70 , H01M4/366 , H01M4/587 , H01M4/624 , H01M4/625 , H01M4/667 , H01M4/70 , H01M10/052 , H01M2004/025 , Y02E60/13 , Y02T10/7022
摘要： A power storage device in which charge capacity and discharge capacity are high and deterioration in battery characteristics due to charge/discharge is small is provided. A power storage device in which charge capacity and discharge capacity are high and output characteristics are excellent is provided. A power storage device in which charge capacity and discharge capacity are high and cycle characteristics are excellent is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector, an active material including a plurality of protrusions protruding from the current collector and an outer shell in contact with and attached to surfaces of the plurality of protrusions, and graphene in contact with and attached to the outer shell. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.
摘要翻译：提供了充电容量和放电容量高的充电装置，并且由于充电/放电而导致的电池特性的劣化小。提供了充电容量和放电容量高，输出特性优异的蓄电装置。提供了充电容量和放电容量高，循环特性优异的蓄电装置。蓄电装置包括负极。负极包括集电体，包括从集电体突出的多个突起的活性材料和与多个突起的表面接触并连接到多个突起的表面的外壳，以及与外壳接触并附接到外壳的石墨烯。多个突起的轴线朝向相同的方向。在集电体和多个突起之间可以设置公共部分。

7. 发明申请

US20090233425A1 PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：等离子体处理装置和制造半导体器件的方法
公开(公告)号：US20090233425A1
公开(公告)日：2009-09-17
申请号：US12400844
申请日：2009-03-10
申请人： Makoto FURUNO , Tetsuo SUGIYAMA , Taichi NOZAWA , Mitsuhiro ICHIJO , Ryota TAJIMA , Shunpei YAMAZAKI
发明人： Makoto FURUNO , Tetsuo SUGIYAMA , Taichi NOZAWA , Mitsuhiro ICHIJO , Ryota TAJIMA , Shunpei YAMAZAKI
IPC分类号： H01L21/205 , C23C14/34
CPC分类号： H01L27/127 , C23C16/24 , C23C16/509 , H01L21/67207 , H01L27/1214 , H01L27/1288 , H01L29/04 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented.
摘要翻译：通过包括串联连接的第一和第二涡轮分子泵的抽空单元，将反应室中的极限压力降低到超高真空。通过刀刃式金属密封法兰，反应室中的泄漏量减少。将微晶半导体膜和非晶半导体膜堆叠在相同的反应室中，其中压力降低至超高真空。通过形成覆盖微晶半导体膜的表面的非晶半导体膜，可以防止微晶半导体膜的氧化。

8. 发明申请

US20130071739A1 NEGATIVE ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE 有权
标题翻译：用于蓄电装置和蓄电装置的负极
公开(公告)号：US20130071739A1
公开(公告)日：2013-03-21
申请号：US13613874
申请日：2012-09-13
申请人： Ryota TAJIMA , Shunpei Yamazaki , Hideomi Suzawa , Takeshi Osada
发明人： Ryota TAJIMA , Shunpei Yamazaki , Hideomi Suzawa , Takeshi Osada
IPC分类号： H01M4/583 , H01M4/70 , H01M4/62 , B82Y30/00
CPC分类号： H01G11/30 , B82Y30/00 , H01G11/26 , H01G11/66 , H01M4/13 , H01M4/134 , H01M4/386 , H01M4/62 , H01M4/625 , H01M10/0525 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a negative electrode for a power storage device in which charge/discharge capacity is high and deterioration in battery characteristics due to charge/discharge is small. The negative electrode for a power storage device includes a negative electrode active material having a plurality of protrusions and a bar which serves as a connecting bridge over a first protrusion and a second protrusion among the plurality of protrusions. The bar is provided in a direction perpendicular to a direction in which a current collector is bent. An axis of the first protrusion and an axis of the second protrusion are oriented in the same direction. Further, a graphene covering a side surface of the protrusion or covering the side surface of the protrusion and a top surface of the bar may be provided.
摘要翻译：提供了一种蓄电装置的负极，其充放电容量高，充放电引起的电池特性的劣化小。蓄电装置用负极包括具有多个突起的负极活性物质和作为多个突起之间的第一突起和第二突起的连接桥的棒。该杆沿垂直于集电体弯曲方向的方向设置。第一突起的轴线和第二突起的轴线朝向相同的方向。此外，可以提供覆盖突起的侧表面或覆盖突起的侧表面和条的顶表面的石墨烯。

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