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1. 发明申请

US20120208360A1 METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20120208360A1
公开(公告)日：2012-08-16
申请号：US13368379
申请日：2012-02-08
申请人： Tetsuhiro TANAKA , Ryo TOKUMARU , Takashi OHTSUKI , Ryota TAJIMA , Erika KATO
发明人： Tetsuhiro TANAKA , Ryo TOKUMARU , Takashi OHTSUKI , Ryota TAJIMA , Erika KATO
IPC分类号： H01L21/336 , H01L21/3065
CPC分类号： H01L29/66765 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L29/04 , H01L29/78648 , H01L29/78696
摘要： A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.
摘要翻译：使用等离子体CVD装置在基板上形成微晶半导体膜，所述等离子体CVD装置包括反应室，使得将沉积气体和氢气供应到反应室中，其中基板设置在第一电极和第二电极之间; 并且通过向第一电极提供高频电力而在反应室中产生等离子体。注意，在等离子体产生的区域中与衬底的端部重叠的区域中的等离子体密度设定为高于在位于更内侧的区域中的等离子体密度使得微结晶半导体膜形成在位于比衬底的端部更靠内侧的区域上。

2. 发明申请

US20120021570A1 METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成微晶半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20120021570A1
公开(公告)日：2012-01-26
申请号：US13184589
申请日：2011-07-18
申请人： Ryota TAJIMA , Tetsuhiro TANAKA , Takashi OHTSUKI , Ryo TOKUMARU , Yuji EGI , Erika KATO , Miyako MORIKUBO
发明人： Ryota TAJIMA , Tetsuhiro TANAKA , Takashi OHTSUKI , Ryo TOKUMARU , Yuji EGI , Erika KATO , Miyako MORIKUBO
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/78696 , C30B25/105 , C30B25/183 , C30B29/06 , C30B29/08 , H01L29/04 , H01L29/78618 , H01L29/78648
摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.
摘要翻译：在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至填充混合晶粒之间的空间。在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

3. 发明申请

US20110053358A1 METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造微晶半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20110053358A1
公开(公告)日：2011-03-03
申请号：US12860175
申请日：2010-08-20
申请人： Satoshi TORIUMI , Ryota TAJIMA , Takashi OHTSUKI , Tetsuhiro TANAKA , Ryo TOKUMARU , Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI , Toshiya ENDO , Shunpei YAMAZAKI
发明人： Satoshi TORIUMI , Ryota TAJIMA , Takashi OHTSUKI , Tetsuhiro TANAKA , Ryo TOKUMARU , Mitsuhiro ICHIJO , Kazutaka KURIKI , Tomokazu YOKOI , Toshiya ENDO , Shunpei YAMAZAKI
IPC分类号： H01L21/20
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/45565 , C23C16/45574 , C23C16/5096 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/0262 , H01L29/66765 , H01L29/78696
摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.
摘要翻译：本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

4. 发明申请

US20110020989A1 METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：形成微晶半导体膜的方法和制造薄膜晶体管的方法
公开(公告)号：US20110020989A1
公开(公告)日：2011-01-27
申请号：US12838023
申请日：2010-07-16
申请人： Ryota TAJIMA , Tetsuhiro TANAKA , Ryo TOKUMARU , Hidekazu MIYAIRI , Mitsuhiro ICHIJO , Taichi NOZAWA
发明人： Ryota TAJIMA , Tetsuhiro TANAKA , Ryo TOKUMARU , Hidekazu MIYAIRI , Mitsuhiro ICHIJO , Taichi NOZAWA
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/28 , C23C16/45523 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L29/78669 , H01L29/78678 , H01L29/78684
摘要： A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.
摘要翻译：形成具有高结晶度的微晶半导体膜。此外，具有优选的电特性和高可靠性的薄膜晶体管和包括薄膜晶体管的显示装置以高生产率制造。以第一流量引入包含硅或锗的沉积气体的步骤，并且以固定速率引入氢气，并且以固定速率引入氢气，并且以第二流量引入含有硅或锗的沉积气体的步骤，从而将含有硅或锗的氢气和沉积气体混合，供给高频电力。因此，在基板上形成微晶半导体膜。

5. 发明申请

US20120187408A1 MICROCRYSTALLINE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：微晶半导体膜，其制造方法和制造半导体器件的方法
公开(公告)号：US20120187408A1
公开(公告)日：2012-07-26
申请号：US13355340
申请日：2012-01-20
申请人： Tetsuhiro TANAKA , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
发明人： Tetsuhiro TANAKA , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
IPC分类号： H01L29/04 , H01L21/20 , H01L21/336
CPC分类号： H01L29/78696 , H01L21/02422 , H01L21/0245 , H01L21/02502 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78654 , H01L29/78678
摘要： An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm and lower than or equal to 2.33 g/cm3.
摘要翻译：本发明的一个实施方案是具有大于或等于70nm且小于或等于100nm的厚度的微晶半导体膜，并且包括从微晶半导体膜的表面部分地突出的晶粒。晶粒具有取向平面，并且包括尺寸为13nm以上的微晶。此外，微晶半导体膜的膜密度高于或等于2.25g / cm 3，低于或等于2.35g / cm 3，优选高于或等于2.30g / cm 2且低于或等于2.33g / cm3。

6. 发明申请

US20110260285A1 SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体衬底和制造方法
公开(公告)号：US20110260285A1
公开(公告)日：2011-10-27
申请号：US13177585
申请日：2011-07-07
申请人： Shunpei YAMAZAKI , Mitsuhiro ICHIJO , Makoto FURUNO , Takashi OHTSUKI , Kenichi OKAZAKI , Tetsuhiro TANAKA , Seiji YASUMOTO
发明人： Shunpei YAMAZAKI , Mitsuhiro ICHIJO , Makoto FURUNO , Takashi OHTSUKI , Kenichi OKAZAKI , Tetsuhiro TANAKA , Seiji YASUMOTO
IPC分类号： H01L29/06
CPC分类号： H01L21/76254 , H01L21/84
摘要： To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at. % and hydrogen at 1 at. % to 20 at. %, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH4 and N2O as source gases is in contact with the single-crystal semiconductor layer.
摘要翻译：为了提供包括适用于实际使用的结晶半导体层的半导体衬底，以及使用与半导体层的材料不同的材料用于支撑衬底，以及使用该半导体衬底的半导体器件。半导体基板包括形成接合面的接合层，由含氮的绝缘材料形成的阻挡层，由包含小于20at的氮的绝缘材料形成的凸版层。％和氢气在1 at。％至20 at。％，以及含有卤素的绝缘层，在支撑基板和单晶半导体层之间。半导体器件至少部分地包括上述结构，并且通过使用SiH 4和N 2 O作为源气体的微波等离子体CVD方法形成的栅极绝缘层与单晶半导体层接触。

7. 发明申请

US20110089425A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110089425A1
公开(公告)日：2011-04-21
申请号：US12969789
申请日：2010-12-16
申请人： Mitsuhiro ICHIJO , Kenichi OKAZAKI , Tetsuhiro TANAKA , Takashi OHTSUKI , Seiji YASUMOTO , Shunpei YAMAZAKI
发明人： Mitsuhiro ICHIJO , Kenichi OKAZAKI , Tetsuhiro TANAKA , Takashi OHTSUKI , Seiji YASUMOTO , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L29/92
CPC分类号： H01L27/1266 , C23C16/02 , C23C16/401 , H01L21/02164 , H01L21/02274 , H01L21/02332 , H01L21/0234 , H01L21/02354 , H01L21/02356 , H01L21/02532 , H01L21/02686 , H01L21/31155 , H01L21/3143 , H01L21/31608 , H01L21/67207 , H01L27/1214 , H01L27/1255 , H01L27/13
摘要： A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.
摘要翻译：提供了用作半导体集成电路的绝缘膜的绝缘膜的制造方法，其即使厚度小也能够确保其可靠性。特别地，提供了一种在低基板温度下在具有绝缘表面的基板上制造高品质绝缘膜的方法，该绝缘表面可以被扩大。将甲硅烷气体（SiH 4），一氧化二氮（N 2 O）和稀有气体引入室中以在高于或等于10Pa且低于或等于30Pa的压力下产生高密度等离子体，使得绝缘膜形成在具有绝缘表面的基板上。之后，停止供给单硅烷气体，一边不暴露于空气中一氧化二氮（N2O）和稀有气体被引入到绝缘膜的表面进行等离子体处理。

8. 发明申请

US20090011611A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090011611A1
公开(公告)日：2009-01-08
申请号：US12130307
申请日：2008-05-30
申请人： Mitsuhiro ICHIJO , Tetsuhiro TANAKA , Takashi OHTSUKI , Seiji YASUMOTO , Kenichi OKAZAKI , Shunpei YAMAZAKI , Naoya SAKAMOTO
发明人： Mitsuhiro ICHIJO , Tetsuhiro TANAKA , Takashi OHTSUKI , Seiji YASUMOTO , Kenichi OKAZAKI , Shunpei YAMAZAKI , Naoya SAKAMOTO
IPC分类号： H01L21/469
CPC分类号： H01L21/31608 , C23C16/4404 , H01L21/0214 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/3145 , H01L21/3185 , H01L27/1214 , H01L27/1259 , H01L29/4908
摘要： It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件具有包含其中抑制混合杂质的膜的半导体元件。另一个目的是提供一种以高产率制造半导体器件的方法。在制造半导体器件的方法中，其中绝缘膜与使用等离子体CVD装置的具有绝缘表面的衬底上提供的半导体层形成接触，在等离子体CVD装置的反应室的内壁涂覆有不含杂质的薄膜，在反应室中引入基板，并将绝缘膜沉积在基板上。结果，可以形成其中杂质减少量的绝缘膜。

9. 发明申请

US20120115290A1 MANUFACTURING METHOD OF CRYSTALLINE SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：晶体管半导体膜的制造方法和半导体器件的制造方法
公开(公告)号：US20120115290A1
公开(公告)日：2012-05-10
申请号：US13283809
申请日：2011-10-28
申请人： Tetsuhiro TANAKA
发明人： Tetsuhiro TANAKA
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/78696 , C23C16/345 , C23C16/45565 , C23C16/5096 , C23C16/56 , H01J37/32018 , H01J37/3244 , H01J37/32449 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The crystalline semiconductor film is formed following steps that supplying a film formation gas to a second gas diffusion area from a gas introduction port provided in an upper electrode; supplying the film formation gas to a first gas diffusion area from the second gas diffusion area through holes provided in a dispersion plate between the first gas diffusion area and the second gas diffusion area; supplying the film formation gas into a treatment room from the first gas diffusion area through holes in a shower plate between the first gas diffusion area and the treatment room; generating glow discharge plasma by supplying high frequency electricity from an electrode surface of the upper electrode; generating crystal nuclei on a substrate provided over a lower electrode facing the upper electrode; and growing the crystal nuclei. A portion of the dispersion plate which faces the gas introduction port has no hole.
摘要翻译：结晶半导体膜形成如下步骤：从设置在上电极中的气体导入口向第二气体扩散区域供给成膜气体; 通过设置在第一气体扩散区域和第二气体扩散区域之间的分散板中的孔从第二气体扩散区域向第一气体扩散区域供给成膜气体; 从所述第一气体扩散区域通过所述第一气体扩散区域和所述处理室之间的喷淋板的孔中的所述成膜气体供给到处理室; 通过从上电极的电极表面提供高频电力产生辉光放电等离子体; 在设置在面向上电极的下电极上的基板上产生晶核; 并生长晶核。面对气体导入口的分散板的一部分没有孔。

10. 发明申请

US20120289005A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120289005A1
公开(公告)日：2012-11-15
申请号：US13466480
申请日：2012-05-08
申请人： Tetsuhiro TANAKA , Shinya SASAGAWA
发明人： Tetsuhiro TANAKA , Shinya SASAGAWA
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78672 , H01L29/788
摘要： A thin film transistor having low off-state current and excellent electrical characteristics can be manufactured. In an inverted staggered thin film transistor including a semiconductor film in which at least a microcrystalline semiconductor region and an amorphous semiconductor region are stacked, a conductive film and an etching protective film are stacked over the semiconductor film; a mask is formed over the etching protective film; first etching treatment in which the etching protective film, the conductive film, and the amorphous semiconductor region are partly etched is performed; then, the mask is removed. Next, second etching treatment in which the exposed amorphous semiconductor region and the microcrystalline semiconductor region are partly dry-etched is performed using the etched etching protective film as a mask so that the microcrystalline semiconductor region is partly exposed to form a back channel region.
摘要翻译：可以制造具有低截止电流和优异电特性的薄膜晶体管。在包括半导体膜的倒置交错薄膜晶体管中，其中层叠有至少一个微晶半导体区域和非晶半导体区域，在半导体膜上层叠导电膜和蚀刻保护膜; 在蚀刻保护膜上形成掩模; 执行其中蚀刻保护膜，导电膜和非晶半导体区域被部分蚀刻的第一蚀刻处理; 然后，去除面具。接下来，使用蚀刻蚀刻保护膜作为掩模进行其中暴露的非晶半导体区域和微晶半导体区域被部分干法蚀刻的第二蚀刻处理，使得微晶半导体区域部分地暴露以形成背沟道区域。

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