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1. 发明授权

US09622368B2 Semiconductor device 有权
公开(公告)号：US09622368B2
公开(公告)日：2017-04-11
申请号：US14400105
申请日：2012-08-24
申请人： Ryo Tsuda , Kazuhiro Morishita
发明人： Ryo Tsuda , Kazuhiro Morishita
IPC分类号： H01R13/46 , H05K5/00 , H05K7/02 , H01L23/498 , H01L25/11 , H01L23/04 , H01L25/10 , H01L25/18 , H05K1/02 , H01L23/373 , H01L23/24 , H01L23/00
CPC分类号： H05K7/02 , H01L23/04 , H01L23/24 , H01L23/3735 , H01L23/49811 , H01L23/49838 , H01L24/73 , H01L25/105 , H01L25/115 , H01L25/18 , H01L2224/0603 , H01L2224/32225 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H05K1/0263 , H01L2924/00012 , H01L2924/00
摘要： Each of semiconductor module includes a semiconductor chip, a case surrounding the semiconductor chip, and a main electrode connected to the semiconductor chip and led out to an upper surface of case. A connecting electrode is connected and fixed to the main electrodes of the adjacent semiconductor modules. The connecting electrode is formed only of a metal plate.

2. 发明申请

US20150138733A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150138733A1
公开(公告)日：2015-05-21
申请号：US14400105
申请日：2012-08-24
申请人： Ryo Tsuda , Kazuhiro Morishita
发明人： Ryo Tsuda , Kazuhiro Morishita
IPC分类号： H05K7/02 , H01L23/04 , H01L25/10
CPC分类号： H05K7/02 , H01L23/04 , H01L23/24 , H01L23/3735 , H01L23/49811 , H01L23/49838 , H01L24/73 , H01L25/105 , H01L25/115 , H01L25/18 , H01L2224/0603 , H01L2224/32225 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H05K1/0263 , H01L2924/00012 , H01L2924/00
摘要： Each of semiconductor module includes a semiconductor chip, a case surrounding the semiconductor chip, and a main electrode connected to the semiconductor chip and led out to an upper surface of case. A connecting electrode is connected and fixed to the main electrodes of the adjacent semiconductor modules. The connecting electrode is formed only of a metal plate. The rated current, the rated voltage and the circuit configuration can easily be changed by changing the connection using the connecting electrode, thus enabling reduction of the design time and facilitating manufacture management. Only a malfunctioning one of the semiconductor modules may be replaced. There is, therefore, no need to replace the entire device. The connecting electrode is formed of an electrically conductive plate and, therefore, enables reduction of the number of component parts and reduction of the device in size in comparison with the conventional wiring bus bar.
摘要翻译：半导体模块中的每一个包括半导体芯片，围绕半导体芯片的壳体以及连接到半导体芯片并被引导到壳体的上表面的主电极。连接电极连接固定在相邻半导体模块的主电极上。连接电极仅由金属板形成。通过改变使用连接电极的连接，可以方便地改变额定电流，额定电压和电路配置，从而减少设计时间，便于制造管理。可以仅替换半导体模块中的故障的一个。因此，无需更换整个设备。连接电极由导电板形成，因此与传统的布线母线相比，能够减少部件数量和减小装置的尺寸。

3. 发明授权

US09023343B2 Phosphorylation-inhibiting agent or dephosphorylating agent for PTEN 有权
标题翻译： PTEN的磷酸化抑制剂或去磷酸化剂
公开(公告)号：US09023343B2
公开(公告)日：2015-05-05
申请号：US13263876
申请日：2010-03-26
申请人： Kazuhiro Morishita , Shingo Nakahata , Makoto Hamasaki
发明人： Kazuhiro Morishita , Shingo Nakahata , Makoto Hamasaki
IPC分类号： A61K38/46 , C12N15/00 , G01N33/53 , C12Q1/48 , A61K31/223 , A61K31/7088 , C07K16/40 , C07K16/44 , C12N9/12 , C12N9/18 , A61K48/00
CPC分类号： C12Q1/485 , A61K31/223 , A61K31/7088 , A61K48/005 , C07K16/40 , C07K16/44 , C07K2317/34 , C12N9/12 , C12N9/18 , G01N2500/00 , A61K2300/00
摘要： Provided is a preventive, progression inhibitor or remedy for a disease one of the causes of which is the activation of the P13K/AKT signaling pathway or vice versa. A phosphorylation-inhibiting and/or dephosphorylating agent, which has an effect of inhibiting the phosphorylation at least at one of the phosphorylation sites of PTEN protein selected from the group consisting of T382, T383 and S380 and/or an effect of dephosphorylating the same, is prepared. Alternatively, a phosphorylation-inhibiting or dephosphorylating agent for PTEN is screened by a method comprising a step for confirming an ability of a test substance to inhibit the phosphorylation at least at one of the phosphorylation sites of PTEN protein selected from the group consisting of T382, T383 and S380 or a dephosphorylation ability thereof. Then, a substance having an effect opposite to the inhibition of PTEN phosphorylation or dephosphorylation thereof, e.g., an antibody against the phosphorylation-inhibiting or dephosphorylating agent for PTEN obtained above, is also obtained.
摘要翻译：提供预防性，进展抑制剂或疾病的补救方法，其原因之一是激活P13K / AKT信号传导途径，反之亦然。一种磷酸化抑制剂和/或去磷酸化剂，其至少在选自T382，T383和S380的PTEN蛋白的磷酸化位点之一处抑制磷酸化和/或使其去磷酸化的作用，准备好了或者，通过包括以下方法筛选用于PTEN的磷酸化抑制剂或去磷酸化剂，所述方法包括用于确认测试物质至少在PTEN蛋白的一个磷酸化位点抑制磷酸化的能力的步骤，所述磷酸化位点选自T382， T383和S380或其去磷酸化能力。然后，也可获得具有与抑制PTEN磷酸化或其去磷酸化作用相反的作用的物质，例如针对上述获得的PTEN的磷酸化抑制或去磷酸化剂的抗体。

4. 发明申请

US20120046451A1 ANTI-lgSF4 ANTIBODY AND UTILIZATION OF THE SAME 审中-公开
标题翻译：抗-IgSF4抗体及其应用
公开(公告)号：US20120046451A1
公开(公告)日：2012-02-23
申请号：US13238096
申请日：2011-09-21
申请人： Yoshikazu Kurosawa , Yasushi Akahori , Nobuhiro Takahashi , Atsushi Sugioka , Nobuhiro Hayashi , Akihiko Takasaki , Kazuhiro Suzuki , Miwa Morita , Gene Kurosawa , Sari Fujiyama , Susumu Tsutsumi , Keiko Ogawa , Kazuki Matsuda , Chiho Muramatsu , Yoshitaka Iba , Mariko Sumitomo , Masachika Azuma , Yoshinori Ukai , Kazuhiro Morishita
发明人： Yoshikazu Kurosawa , Yasushi Akahori , Nobuhiro Takahashi , Atsushi Sugioka , Nobuhiro Hayashi , Akihiko Takasaki , Kazuhiro Suzuki , Miwa Morita , Gene Kurosawa , Sari Fujiyama , Susumu Tsutsumi , Keiko Ogawa , Kazuki Matsuda , Chiho Muramatsu , Yoshitaka Iba , Mariko Sumitomo , Masachika Azuma , Yoshinori Ukai , Kazuhiro Morishita
IPC分类号： C07K16/42
CPC分类号： C07K16/303 , A61K2039/505 , C07K16/2803 , C07K2317/52 , C07K2317/56 , C07K2317/565 , C07K2317/622 , C07K2317/732 , C07K2319/00 , G01N33/57426 , G01N33/57438
摘要： It is intended to clarify a molecule which is available as a target in treating or diagnosing cancer and utilize the molecule in the medical field or the research field. By treating IgSF4, which has been identified as a molecule specifically expressed in lung cancer cells, with an antibody, and ADCC activity is exerted. Based on this finding, an anti-IgSF4 antibody is provided as a means efficacious in treating cancer, etc.
摘要翻译：旨在澄清可用作治疗或诊断癌症并在医学领域或研究领域中利用分子的靶标的分子。通过用抗体处理被鉴定为特异性表达于肺癌细胞中的分子的IgSF4，并施加ADCC活性。基于该发现，提供了抗IgSF4抗体作为治疗癌症等的手段。

5. 发明授权

US06657239B1 Power-switching semiconductor device 有权
标题翻译：电源开关半导体器件
公开(公告)号：US06657239B1
公开(公告)日：2003-12-02
申请号：US09784451
申请日：2001-02-27
申请人： Kazuhiro Morishita , Katsumi Satoh
发明人： Kazuhiro Morishita , Katsumi Satoh
IPC分类号： H01L2945
CPC分类号： H01L29/41716 , H01L29/42308
摘要： In order to reduce a turn-on time of a power switching semiconductor device at a low cost, a first main electrode divided into a plurality of segments forming segment rows of a multi-concentric circle and a control electrode surrounding the segments are formed on a front major surface of a semiconductor substrate, and a second electrode is formed on a rear major surface thereof, and a turn-on operation is performed between the first main electrode and the second main electrode with a control signal inputted from the control electrode, specifying a relationship between a width of a segment and a distance between adjacent segments, and others.
摘要翻译：为了以低成本降低功率开关半导体器件的导通时间，分割成形成多同心圆的段行的多个段的第一主电极和围绕该段的控制电极形成在半导体衬底的前主表面和第二电极形成在其后主表面上，并且利用从控制电极输入的控制信号在第一主电极和第二主电极之间进行导通操作，指定片段的宽度与相邻片段之间的距离之间的关系等。

6. 发明授权

US06624448B2 Semiconductor device with multiple supporting points 有权
标题翻译：具有多个支撑点的半导体器件
公开(公告)号：US06624448B2
公开(公告)日：2003-09-23
申请号：US09822342
申请日：2001-04-02
申请人： Kazunori Taguchi , Kazuhiro Morishita , Kenji Oota
发明人： Kazunori Taguchi , Kazuhiro Morishita , Kenji Oota
IPC分类号： H01L2974
CPC分类号： H01L24/72 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01033 , H01L2924/1301 , H01L2924/14 , H01L2924/19041 , H01L2924/30107 , H01L2924/00
摘要： A semiconductor device having a supporting member that reduces a resonance phenomenon. A pair of reinforcing members is fixed on a gate drive substrate with spacers interposed there between and upright portions of the pair of reinforcing members are fastened with screws on a side wall of a cathode flange. A spacer is fixed on the gate drive substrate and a projection of the spacer is inserted in an engaging member fixed on the bottom of the cathode fin electrode and thus fixed on the bottom of the cathode fin electrode. The pair of upright portions as the first and second supporting points and the projection of the spacer as the third supporting point stably support the gate drive substrate on the cathode fin electrode without freedom of rotation at the three positions arranged to surround an opening.
摘要翻译：一种具有减少共振现象的支撑构件的半导体器件。一对加强构件固定在栅极驱动基板上，其间隔着间隔件，一对加强构件的直立部分用螺钉紧固在阴极凸缘的侧壁上。间隔件固定在栅极驱动基板上，并且间隔件的突起插入固定在阴极鳍电极的底部上的接合构件中，并因此固定在阴极鳍电极的底部。作为第一支撑点和第二支撑点的一对直立部分和作为第三支撑点的间隔件的突出部在围绕开口的三个位置处稳定地支撑阴极鳍电极上的栅极驱动基板，而不会旋转自如。

7. 发明授权

US06521918B2 Semiconductor device and driving method thereof 有权
公开(公告)号：US06521918B2
公开(公告)日：2003-02-18
申请号：US09566738
申请日：2000-05-09
申请人： Kenji Oota , Kazuhiro Morishita , Katsumi Satoh
发明人： Kenji Oota , Kazuhiro Morishita , Katsumi Satoh
IPC分类号： H01L31111
CPC分类号： H01L29/0692 , H01L29/742 , H01L29/744
摘要： To make it possible to control turn-off operation even after switch over to transistor operation after commutation of the main current from cathode electrode to gate electrode in turn-off operation, a semiconductor device according to the invention comprises a first electrode, a first region of first conduction type provided on the first electrode, a second region of second conduction type provided on the first region, a third region and a fourth region of first conduction type respectively provided on the second region with a predetermined distance from each other to allow formation of a channel region on the second region, a fifth region of second conduction type provided on the third region, a second electrode provided on the fifth region, a gate electrode established in contact with the fourth region and a control electrode provided on a separate region between the third and fourth regions on the second region to control the channel region through an insulation layer.

8. 发明授权

US06227500B1 Meter mounting structure and meter mounting method 有权
标题翻译：仪表安装结构和仪表安装方法
公开(公告)号：US06227500B1
公开(公告)日：2001-05-08
申请号：US09281070
申请日：1999-03-09
申请人： Shigemitsu Inaba , Kazuhiro Morishita
发明人： Shigemitsu Inaba , Kazuhiro Morishita
IPC分类号： G12B900
CPC分类号： B60K37/06 , B60K37/02 , B60K2350/941 , B60K2350/946 , G01D11/30
摘要： A meter is mounted to an instrument panel. The meter has an engaging portion in the form of a projection-like rotation shaft and projections located on the side walls of the meter. The instrument panel has a support groove and guide grooves. The meter is inserted into the instrument panel so that the projection-like rotation portion engages with the support groove of the panel. The meter is rotated about the projection-like rotation portion while the projections on the side wall of the meter engage with the guide grooves of the instrument panel.
摘要翻译：仪表安装在仪表板上。仪表具有呈突起状旋转轴的形式的接合部分和位于仪表侧壁上的凸起。仪表板具有支撑槽和引导槽。仪表被插入到仪表板中，使得突起状旋转部分与面板的支撑槽接合。仪表在突出状旋转部分周围旋转，同时仪表侧壁上的突起与仪表板的导向槽接合。

9. 发明授权

US06218683B1 Diode 有权
标题翻译：二极管
公开(公告)号：US06218683B1
公开(公告)日：2001-04-17
申请号：US09463407
申请日：2000-02-01
申请人： Shinji Koga , Kazuhiro Morishita , Katsumi Satoh
发明人： Shinji Koga , Kazuhiro Morishita , Katsumi Satoh
IPC分类号： H01L2974
CPC分类号： H01L29/32 , H01L29/861 , H01L29/868
摘要： The present invention relates to a diode, and has an object to simultaneously implement a high di/dt capability, a low reverse recovery loss and a low forward voltage and to suppress generation of voltage oscillation. In order to achieve the above-mentioned object, life time killers are selectively introduced into a semiconductor substrate (20) comprising a P layer (1), an N− layer (21) and an N+ layer (3). A density of the introduced life time killers is the highest in a first region (6) adjacent to the P layer (1), and is the second highest in a second region (7) in the N− layer (21). The life time killers are not introduced into a third region (2). Accordingly, a life time in the N− layer (21) is expressed by the first region (6)
摘要翻译：本发明涉及一种二极管，其目的在于同时实现高di / dt能力，低反向恢复损耗和低正向电压，并抑制电压振荡的产生。为了实现上述目的，将寿命杀手选择性地引入到包括P层（1），N层（21）和N +层（3）的半导体衬底（20）中。引入的寿命杀伤剂的密度在与P层（1）相邻的第一区域（6）中是最高的，并且是N层（21）中的第二区域（7）中的第二高度。生命时代的杀手并没有被引入第三个地区（2）。因此，通过第一区域（6）<第二区域（7）<第三区域（2）表示N层（21）中的寿命。第二区域（7）和第三区域（2）与P层（1）相邻。此外，第二区域（7）环绕第三区域（2）。

10. 发明授权

US5554051A Double-lock type connector 失效
标题翻译：双锁式连接器
公开(公告)号：US5554051A
公开(公告)日：1996-09-10
申请号：US397497
申请日：1995-03-02
申请人： Yasuhisa Shinji , Kazuhiro Morishita
发明人： Yasuhisa Shinji , Kazuhiro Morishita
IPC分类号： H01R13/42 , H01R13/422 , H01R13/436
CPC分类号： H01R13/4368 , H01R13/4223
摘要： A double-lock type connector includes a housing having a pair of locking lances for locking a terminal, and a holder having a pair of locking arms for locking the terminal when inserted into the housing. The housing has a pair of guide paths into which the pair of locking arms advance, and a pair of paths continuous with the pair of guide paths. While the holder is in the temporarily locked position where the locking arms are out of engagement with the terminals, a lance-unlocking tool is inserted into the housing form an opening on one side of the housing and an arm-unlocking tool is inserted into the housing from an opening on the other side of the housing. Thus, the locking lances and locking arms are both out of engagement with the terminal. The locking arms are at the guide paths when the holder is in the temporarily locked position. The arm-unlocking tool has a pair of prongs that goes into contact with the pair of locking arms when inserted into the housing. The arm-unlocking tool has a pair of prongs that goes into contact with the surface of the locking arm facing the terminal when inserted into the housing. The arm-unlocking tool is then pulled out of the housing together with the wires connected to the terminals, while the prongs of the arm-unlocking tool urging the locking arms to deflect away from each other.
摘要翻译：双锁式连接器包括具有用于锁定端子的一对锁定矛杆的壳体和具有一对锁定臂的保持器，用于当插入到壳体中时锁定终端。壳体具有一对引导路径，一对锁定臂前进到该引导路径以及与该对引导路径连续的一对路径。当保持器处于临时锁定位置，其中锁定臂与端子脱离接合时，喷枪解锁工具被插入到壳体中，形成在壳体的一侧上的开口，并且将臂解锁工具插入到从外壳的另一侧的开口的外壳。因此，锁定杆和锁定臂都与端子脱离啮合。当保持器处于临时锁定位置时，锁定臂位于引导路径处。手臂解锁工具具有一对插脚，当插入到外壳中时，它们与一对锁定臂接触。手臂解锁工具具有一对插脚，当插入到外壳中时，它们与面向端子的锁定臂的表面接触。然后将臂解锁工具与连接到端子的电线一起从壳体中拉出，同时臂解锁工具的插脚推动锁定臂彼此偏离。

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