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1. 发明授权

US07906401B1 Method of tuning threshold voltages of interdiffusible structures 有权
标题翻译：调整相互扩散结构的阈值电压的方法
公开(公告)号：US07906401B1
公开(公告)日：2011-03-15
申请号：US11602444
申请日：2006-11-01
申请人： Ryan P. Lu , Ayax D. Ramirez , Bruce W. Offord , Stephen D. Russell
发明人： Ryan P. Lu , Ayax D. Ramirez , Bruce W. Offord , Stephen D. Russell
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , H01L21/28079 , H01L29/4908 , H01L29/4958 , H01L29/66772 , H01L29/78
摘要： A method of tuning threshold voltages of interdiffusible structures. The method includes a step of situating an interdiffusible structure in a path of a laser and a step of illuminating the interdiffusible structure with laser energy until a desired threshold voltage is obtained.
摘要翻译：调整相互扩散结构的阈值电压的方法。该方法包括将激光器的路径中的相互扩散结构对置的步骤和用激光能量照射可互换结构的步骤，直到获得期望的阈值电压。

2. 发明授权

US07153749B1 Method of tuning threshold voltages of interdiffusible structures 有权
标题翻译：调整相互扩散结构的阈值电压的方法
公开(公告)号：US07153749B1
公开(公告)日：2006-12-26
申请号：US11070634
申请日：2005-03-02
申请人： Ryan P. Lu , Ayax D. Ramirez , Bruce W. Offord , Stephen D. Russell
发明人： Ryan P. Lu , Ayax D. Ramirez , Bruce W. Offord , Stephen D. Russell
IPC分类号： H01L21/336 , H01L21/00
CPC分类号： H01L21/28079 , H01L21/268 , H01L29/4908 , H01L29/4958 , H01L29/66772 , H01L29/78
摘要： A method of tuning threshold voltages of interdiffusible structures. The method includes a step of situating a interdiffusible structure in a path of a laser and a step of illuminating the interdiffusible structure with laser energy until a desired threshold voltage is obtained.
摘要翻译：调整相互扩散结构的阈值电压的方法。该方法包括将激光的路径中相互扩散的结构对置的步骤以及用激光能量照射可相互扩散的结构的步骤，直至获得所需的阈值电压。

3. 发明授权

US06372592B1 Self-aligned MOSFET with electrically active mask 失效
标题翻译：具有电活动掩模的自对准MOSFET
公开(公告)号：US06372592B1
公开(公告)日：2002-04-16
申请号：US08768694
申请日：1996-12-18
申请人： Stephen D. Russell , Douglas A. Sexton , Bruce W. Offord , George P. Imthurn
发明人： Stephen D. Russell , Douglas A. Sexton , Bruce W. Offord , George P. Imthurn
IPC分类号： H01L21336
CPC分类号： H01L29/6678 , H01L29/458
摘要： A method for making a self-aligned FET with an electrically active mask comprises the steps of forming a semiconductor layer on an insulating substrate, forming an electrically nonconductive oxide layer on the semiconductor layer, forming an electrically conductive metal layer on the oxide layer, patterning the metal layer and the oxide layer to form an electrically active gate on semiconductor layer, introducing dopants into the semiconductor layer to form a source region and a drain region masked by the metal gate, and illuminating the source and the drain regions with a pulsed excimer laser having a wavelength from about 150 nm to 350 nm to anneal the source region and the drain region.
摘要翻译：制造具有电活性掩模的自对准FET的方法包括以下步骤：在绝缘基板上形成半导体层，在半导体层上形成非导电氧化物层，在氧化物层上形成导电金属层，图案化所述金属层和所述氧化物层在半导体层上形成电活性栅极，将掺杂剂引入到所述半导体层中以形成由所述金属栅极掩蔽的源极区域和漏极区域，以及用脉冲准分子照射所述源极区域和所述漏极区域具有从约150nm至350nm的波长的激光器，以退火源极区域和漏极区域。

4. 发明授权

US07253869B1 Silicon-on-sapphire display with audio transducer and method of fabricating same 有权
标题翻译：具有音频传感器的蓝宝石蓝宝石显示器及其制造方法
公开(公告)号：US07253869B1
公开(公告)日：2007-08-07
申请号：US10901653
申请日：2004-07-29
申请人： Stephen D. Russell , Randy L. Shimabukuro , Bruce W. Offord
发明人： Stephen D. Russell , Randy L. Shimabukuro , Bruce W. Offord
IPC分类号： G02F1/1333
CPC分类号： G02F1/13454
摘要： A liquid crystal display includes: a) a sapphire substrate; b) a single crystal silicon structure disposed on the sapphire substrate to create a silicon-on-sapphire structure; c) a plurality of liquid crystal capacitors disposed on the silicon-on-sapphire structure; d) integrated self-aligned circuitry formed from the crystal silicon structure, where the circuitry modulates the liquid crystal capacitors such that a video image is generated; and e) an integrated audio transducer disposed on the silicon-on-sapphire structure for generating an audible signal.
摘要翻译：液晶显示器包括：a）蓝宝石衬底; b）设置在蓝宝石衬底上的单晶硅结构，以产生蓝宝石结构; c）设置在蓝宝石结构上的多个液晶电容器; d）由晶体硅结构形成的集成自对准电路，其中电路调制液晶电容器，使得产生视频图像; 以及e）设置在蓝宝石结构上的集成音频换能器，用于产生可听见的信号。

5. 依法登记的发明

USH1637H Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) 失效
标题翻译：激光辅助制造蓝宝石（SOS）中的双极晶体管，
公开(公告)号：USH1637H
公开(公告)日：1997-03-04
申请号：US762538
申请日：1991-09-18
申请人： Bruce W. Offord , Stephen D. Russell , Kurt H. Weiner
发明人： Bruce W. Offord , Stephen D. Russell , Kurt H. Weiner
IPC分类号： H01L21/265 , H01L21/268 , H01L21/331 , H01L21/86
CPC分类号： H01L29/66265 , H01L21/26513 , H01L21/268 , H01L21/86
摘要： The fabrication of bipolar junction transistors in silicon-on-sapphire (SOS) relies upon the laser-assisted dopant activation in SOS. A patterned 100% aluminum mask whose function is to reflect laser light from regions where melting of the silicon is undesirable is provided on an SOS wafer to be processed. The wafer is placed within a wafer carrier that is evacuated and backfilled with an inert atmosphere and that is provided with a window transparent to the wavelength of the laser beam to allow illumination of the masked wafer when the carrier is inserted into a laser processing system. A pulsed laser (typically an excimer laser) beam is appropriately shaped and homogenized and one or more pulses are directed onto the wafer. The laser beam pulse energy and pulse duration are set to obtain the optimal fluence impinging on the wafer in order to achieve the desired melt duration and corresponding junction depth. Care must be taken since activation and rapid dopant redistribution occurs when the laser fluence is above the melt threshold and below the ablation threshold. Thus, bipolar junction transistors in SOS utilize a pulsed laser activation of ion implanted dopant atoms. Appropriate masking and pulsed laser illumination assures the electrical activation of the dopant without allowing undesirable diffusion either vertically along crystallographic defects (diffusion pipes) or laterally.
摘要翻译：硅蓝宝石（SOS）中双极结晶体管的制造依赖于SOS中激光辅助的掺杂剂激活。在要处理的SOS晶片上设置图案化的100％铝掩模，其功能是反射来自硅熔化区域的激光。将晶片放置在被惰性气氛中抽真空并回填的晶片载体中，并且其具有对激光束的波长透明的窗口，以允许当载体插入激光加工系统时照射被屏蔽的晶片。脉冲激光（通常是准分子激光器）光束被适当地成形并均匀化，并且一个或多个脉冲被引导到晶片上。设置激光束脉冲能量和脉冲持续时间以获得撞击晶片的最佳注量，以获得所需的熔融持续时间和对应的结深度。必须小心，因为当激光能量密度高于熔融阈值并低于消融阈值时，激活和快速掺杂剂再分配发生。因此，SOS中的双极结晶体管利用离子注入掺杂原子的脉冲激光激活。合适的掩蔽和脉冲激光照射确保掺杂剂的电活化，而不会沿着结晶缺陷（扩散管）或横向垂直地不期望地扩散。

6. 发明授权

US06954236B1 Silicon-on-sapphire display with wireless interconnections and method of fabricating same 失效
标题翻译：具有无线互连的蓝宝石蓝宝石显示器及其制造方法
公开(公告)号：US06954236B1
公开(公告)日：2005-10-11
申请号：US10911768
申请日：2004-07-29
申请人： Stephen D. Russell , Randy L. Shimabukuro , Bruce W. Offord
发明人： Stephen D. Russell , Randy L. Shimabukuro , Bruce W. Offord
IPC分类号： G02F1/1343 , G02F1/1362
CPC分类号： G02F1/13454
摘要： A liquid crystal display includes: a) a sapphire substrate; b) a single crystal silicon structure disposed on the sapphire substrate to create a silicon-on-sapphire structure; c) a plurality of liquid crystal capacitors disposed on the silicon-on-sapphire structure; d) integrated self-aligned circuitry formed from the crystal silicon structure, where the circuitry modulates the liquid crystal capacitors in response to an input control signal; and e) a receiver disposed on the silicon-on-sapphire structure for receiving electromagnetic radiation and generating the input control signal responsive to the received electromagnetic radiation.
摘要翻译：液晶显示器包括：a）蓝宝石衬底; b）设置在蓝宝石衬底上的单晶硅结构，以产生蓝宝石结构; c）设置在蓝宝石结构上的多个液晶电容器; d）由晶体硅结构形成的集成自对准电路，其中电路响应于输入控制信号调制液晶电容器; 以及e）设置在蓝宝石结构上的接收器，用于接收电磁辐射并响应于所接收的电磁辐射产生输入控制信号。

7. 发明授权

US06617187B1 Method for fabricating an electrically addressable silicon-on-sapphire light valve 有权
标题翻译：用于制造电可寻址硅蓝宝石光阀的方法
公开(公告)号：US06617187B1
公开(公告)日：2003-09-09
申请号：US09880660
申请日：2001-08-03
申请人： Randy L. Shimabukuro , Stephen D. Russell , Bruce W. Offord
发明人： Randy L. Shimabukuro , Stephen D. Russell , Bruce W. Offord
IPC分类号： H01L2100
CPC分类号： H01L29/6678 , G02F1/13454 , H01L21/8238 , H01L21/86 , H01L27/1214 , H01L29/78657
摘要： A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry which is used to control the operation of the pixels.
摘要翻译：一种用于制造蓝宝石结构上的单片集成液晶阵列显示和控制电路的方法，包括以下步骤：a）在蓝宝石衬底上形成外延硅层以产生蓝宝石结构; b）离子注入外延硅层; c）退火硅蓝宝石结构; d）氧化所述外延硅层以从所述外延硅层的一部分形成二氧化硅层，从而保留减薄的外延硅层; e）去除二氧化硅层以暴露变薄的外延硅层; f）从所述变薄的外延硅层制造像素阵列; 以及g）从所述变薄的外延硅层制造集成电路，其可操作地耦合以调制像素。减薄的外延硅支持用于控制像素的操作的器件质量电路的制造。

8. 发明授权

US06312968B1 Method for fabricating an electrically addressable silicon-on-sapphire light valve 失效
标题翻译：用于制造电可寻址硅蓝宝石光阀的方法
公开(公告)号：US06312968B1
公开(公告)日：2001-11-06
申请号：US09047658
申请日：1998-03-25
申请人： Randy L. Shimabukuro , Stephen D. Russell , Bruce W. Offord
发明人： Randy L. Shimabukuro , Stephen D. Russell , Bruce W. Offord
IPC分类号： H01L2100
CPC分类号： H01L29/6678 , G02F1/13454 , H01L21/8238 , H01L21/86 , H01L27/1214 , H01L29/78657
摘要： A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry which is used to control the operation of the pixels.
摘要翻译：一种用于制造蓝宝石结构上的单片集成液晶阵列显示和控制电路的方法，包括以下步骤：a）在蓝宝石衬底上形成外延硅层以产生蓝宝石结构; b）离子注入外延硅层; c）退火硅蓝宝石结构; d）氧化所述外延硅层以从所述外延硅层的一部分形成二氧化硅层，从而保留减薄的外延硅层; e）去除二氧化硅层以暴露变薄的外延硅层; f）从所述变薄的外延硅层制造像素阵列; 以及g）从所述变薄的外延硅层制造集成电路，其可操作地耦合以调制像素。减薄的外延硅支持用于控制像素的操作的器件质量电路的制造。

9. 发明授权

US06190933B1 Ultra-high resolution liquid crystal display on silicon-on-sapphire 失效
标题翻译：硅蓝宝石上的超高分辨率液晶显示器
公开(公告)号：US06190933B1
公开(公告)日：2001-02-20
申请号：US09047813
申请日：1998-03-25
申请人： Randy L. Shimabukuro , Stephen D. Russell , Bruce W. Offord
发明人： Randy L. Shimabukuro , Stephen D. Russell , Bruce W. Offord
IPC分类号： H01L2100
CPC分类号： H01L29/6678 , G02F1/13454 , H01L21/8238 , H01L21/86 , H01L27/1214 , H01L29/78657
摘要： A liquid crystal array and associated drive circuitry are monolithically formed on a silicon-on-sapphire structure, and are fabricated by a method comprising the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from a portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer wherein each of the pixels includes a liquid crystal capacitor; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry on the silicon-on-sapphire structure which is used to control the operation of the pixels.
摘要翻译：液晶阵列和相关联的驱动电路单片地形成在蓝宝石结构上，并且通过包括以下步骤的方法制造：a）在蓝宝石衬底上形成外延硅层以产生蓝宝石上的硅结构体; b）离子注入外延硅层; c）退火硅蓝宝石结构; d）氧化所述外延硅层以从所述外延硅层的一部分形成二氧化硅层，从而保留减薄的外延硅层; e）去除二氧化硅层以暴露变薄的外延硅层; f）从所述变薄的外延硅层制造像素阵列，其中每个像素包括液晶电容器; 以及g）从所述变薄的外延硅层制造集成电路，其可操作地耦合以调制像素。减薄的外延硅支持在蓝宝石结构上的器件质量电路的制造，其用于控制像素的操作。

10. 发明授权

US07466369B1 Portable projector using a transmissive microdisplay 失效
标题翻译：便携式投影机使用透射微显示器
公开(公告)号：US07466369B1
公开(公告)日：2008-12-16
申请号：US11637576
申请日：2006-12-12
申请人： Bruce W. Offord , Stephen D. Russell , Randy L. Shimabukuro
发明人： Bruce W. Offord , Stephen D. Russell , Randy L. Shimabukuro
IPC分类号： G02F1/1335
CPC分类号： H04N9/3173
摘要： A portable micro-display projector uses a light transmissive liquid crystal display system wherein light is projected co-linearly from a light source through, and is selectively altered by, a transmissive liquid crystal display or liquid crystal light valve of the light transmissive liquid crystal display system.
摘要翻译：便携式微型显示投影仪使用透光型液晶显示系统，其中光从光源共线投射，并被透光液晶显示器的透射型液晶显示器或液晶光阀选择性地改变系统。

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