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    • 1. 发明授权
    • Method for fabricating an electrically addressable silicon-on-sapphire light valve
    • 用于制造电可寻址硅蓝宝石光阀的方法
    • US06617187B1
    • 2003-09-09
    • US09880660
    • 2001-08-03
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • H01L2100
    • H01L29/6678G02F1/13454H01L21/8238H01L21/86H01L27/1214H01L29/78657
    • A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry which is used to control the operation of the pixels.
    • 一种用于制造蓝宝石结构上的单片集成液晶阵列显示和控制电路的方法,包括以下步骤:a)在蓝宝石衬底上形成外延硅层以产生蓝宝石结构; b)离子注入外延硅层; c)退火硅蓝宝石结构; d)氧化所述外延硅层以从所述外延硅层的一部分形成二氧化硅层,从而保留减薄的外延硅层; e)去除二氧化硅层以暴露变薄的外延硅层; f)从所述变薄的外延硅层制造像素阵列; 以及g)从所述变薄的外延硅层制造集成电路,其可操作地耦合以调制像素。 减薄的外延硅支持用于控制像素的操作的器件质量电路的制造。
    • 2. 发明授权
    • Method for fabricating an electrically addressable silicon-on-sapphire light valve
    • 用于制造电可寻址硅蓝宝石光阀的方法
    • US06312968B1
    • 2001-11-06
    • US09047658
    • 1998-03-25
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • H01L2100
    • H01L29/6678G02F1/13454H01L21/8238H01L21/86H01L27/1214H01L29/78657
    • A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry which is used to control the operation of the pixels.
    • 一种用于制造蓝宝石结构上的单片集成液晶阵列显示和控制电路的方法,包括以下步骤:a)在蓝宝石衬底上形成外延硅层以产生蓝宝石结构; b)离子注入外延硅层; c)退火硅蓝宝石结构; d)氧化所述外延硅层以从所述外延硅层的一部分形成二氧化硅层,从而保留减薄的外延硅层; e)去除二氧化硅层以暴露变薄的外延硅层; f)从所述变薄的外延硅层制造像素阵列; 以及g)从所述变薄的外延硅层制造集成电路,其可操作地耦合以调制像素。 减薄的外延硅支持用于控制像素的操作的器件质量电路的制造。
    • 3. 发明授权
    • Ultra-high resolution liquid crystal display on silicon-on-sapphire
    • 硅蓝宝石上的超高分辨率液晶显示器
    • US06190933B1
    • 2001-02-20
    • US09047813
    • 1998-03-25
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • H01L2100
    • H01L29/6678G02F1/13454H01L21/8238H01L21/86H01L27/1214H01L29/78657
    • A liquid crystal array and associated drive circuitry are monolithically formed on a silicon-on-sapphire structure, and are fabricated by a method comprising the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from a portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer wherein each of the pixels includes a liquid crystal capacitor; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry on the silicon-on-sapphire structure which is used to control the operation of the pixels.
    • 液晶阵列和相关联的驱动电路单片地形成在蓝宝石结构上,并且通过包括以下步骤的方法制造:a)在蓝宝石衬底上形成外延硅层以产生蓝宝石上的硅 结构体; b)离子注入外延硅层; c)退火硅蓝宝石结构; d)氧化所述外延硅层以从所述外延硅层的一部分形成二氧化硅层,从而保留减薄的外延硅层; e)去除二氧化硅层以暴露变薄的外延硅层; f)从所述变薄的外延硅层制造像素阵列,其中每个像素包括液晶电容器; 以及g)从所述变薄的外延硅层制造集成电路,其可操作地耦合以调制像素。 减薄的外延硅支持在蓝宝石结构上的器件质量电路的制造,其用于控制​​像素的操作。
    • 8. 发明授权
    • Ultra-high resolution liquid crystal display on silicon-on-sapphire
    • 硅蓝宝石上的超高分辨率液晶显示器
    • US06365936B1
    • 2002-04-02
    • US09607438
    • 2000-06-29
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • Randy L. ShimabukuroStephen D. RussellBruce W. Offord
    • H01L2701
    • H01L29/6678G02F1/13454H01L21/8238H01L21/86H01L27/1214H01L29/78657
    • A liquid crystal array and associated drive circuitry are monolithically formed on a silicon-on-sapphire structure, and are fabricated by a method comprising the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on-sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from a portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer wherein each of the pixels includes a liquid crystal capacitor; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry on the silicon-on-sapphire structure which is used to control the operation of the pixels.
    • 液晶阵列和相关联的驱动电路单片地形成在蓝宝石结构上,并且通过包括以下步骤的方法制造:a)在蓝宝石衬底上形成外延硅层以产生蓝宝石上的硅 结构体; b)离子注入外延硅层; c)退火蓝宝石结构; d)氧化所述外延硅层以从所述外延硅层的一部分形成二氧化硅层,从而保留减薄的外延硅层; e)去除二氧化硅层以暴露变薄的外延硅层; f)从所述变薄的外延硅层制造像素阵列,其中每个像素包括液晶电容器; 以及g)从所述变薄的外延硅层制造集成电路,其可操作地耦合以调制像素。 减薄的外延硅支持在蓝宝石结构上的器件质量电路的制造,其用于控制​​像素的操作。
    • 10. 发明授权
    • Resonance tunable optical filter
    • 共振可调滤光片
    • US06738194B1
    • 2004-05-18
    • US10200712
    • 2002-07-22
    • Ayax D. RamirezStephen D. RussellRandy L. Shimabukuro
    • Ayax D. RamirezStephen D. RussellRandy L. Shimabukuro
    • G02B2700
    • G02B5/22G02B6/266
    • An optical modulating device capable of use as a light valve, display, or optical filter, which uses variation in incident angle to exploit color-selective absorption at a metal-dielectric interface by surface plasmons. The device includes a dielectric layer, at least one metallic layer through which electromagnetic radiation may be transmitted or reflected, and incident and exit layers which are both optically transmissive. A beam steering mechanism controls the incident angle of the electromagnetic radiation. In one embodiment, an external beam steering mechanism is used to set the incident light angle onto the filter. In another embodiment, the filter is formed as an integral part of, for example, a cantilever. The incident light angle is then controlled by the angle of the filter cantilever.
    • 能够用作光阀,显示器或滤光器的光调制装置,其使用入射角度的变化来利用表面等离子体激元在金属 - 电介质界面处利用颜色选择性吸收。 该器件包括电介质层,电磁辐射可透过或反射的至少一个金属层,以及光学透射的入射层和出射层。 光束转向机构控制电磁辐射的入射角。 在一个实施例中,外部光束转向机构用于将入射光角度设置在过滤器上。 在另一个实施例中,过滤器形成为例如悬臂的整体部分。 入射光角然后由过滤器悬臂的角度控制。