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1. 发明申请

US20100197125A1 TECHNIQUE FOR PROCESSING A SUBSTRATE 失效
标题翻译：处理基板的技术
公开(公告)号：US20100197125A1
公开(公告)日：2010-08-05
申请号：US12695729
申请日：2010-01-28
申请人： Russell J. Low , William Weaver , Nicholas P.T. Bateman , Atul Gupta
发明人： Russell J. Low , William Weaver , Nicholas P.T. Bateman , Atul Gupta
IPC分类号： H01L21/266 , H01J37/317 , B05C11/00
CPC分类号： H01L21/266 , H01J37/09 , H01J37/3171 , H01J2237/0458 , H01J2237/31711 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
摘要翻译：公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分。

2. 发明申请

US20110092059A1 TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
标题翻译：加工基材的技术
公开(公告)号：US20110092059A1
公开(公告)日：2011-04-21
申请号：US12756036
申请日：2010-04-07
申请人： Kevin M. Daniels , Russell J. Low , Nicholas P.T. Bateman , Benjamin B. Riordon
发明人： Kevin M. Daniels , Russell J. Low , Nicholas P.T. Bateman , Benjamin B. Riordon
IPC分类号： H01L21/266 , B05C11/00 , B05B5/025
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/08 , H01J2237/303 , H01J2237/31711 , H01L21/266
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
摘要翻译：本文中公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。掩模可以并入基板处理系统中，例如离子注入系统。掩模可以包括设置在第一排中的一个或多个第一孔; 以及设置在第二排中的一个或多个第二孔，每排沿着所述掩模的宽度方向延伸，其中所述一个或多个第一孔和所述一个或多个第二孔是不均匀的。

3. 发明申请

US20120181443A1 MASK HEALTH MONITOR USING A FARADAY PROBE 失效
标题翻译：使用FARADAY PROBE的MASK健康监护仪
公开(公告)号：US20120181443A1
公开(公告)日：2012-07-19
申请号：US13428682
申请日：2012-03-23
申请人： Benjamin B. RIORDON , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
发明人： Benjamin B. RIORDON , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
IPC分类号： G01T1/17
CPC分类号： H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/31711 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
摘要翻译：在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。离子电流测量装置通过离子束平移。使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

4. 发明申请

US20110031408A1 MASK HEALTH MONITOR USING A FARADAY PROBE 失效
标题翻译：使用FARADAY PROBE的MASK健康监护仪
公开(公告)号：US20110031408A1
公开(公告)日：2011-02-10
申请号：US12845665
申请日：2010-07-28
申请人： Benjamin B. Riordon , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
发明人： Benjamin B. Riordon , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/31711 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
摘要翻译：在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。离子电流测量装置通过离子束平移。使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

5. 发明授权

US08685846B2 Technique for processing a substrate 失效
标题翻译：加工基材的技术
公开(公告)号：US08685846B2
公开(公告)日：2014-04-01
申请号：US12695729
申请日：2010-01-28
申请人： Russell J. Low , William T. Weaver , Nicholas P. T. Bateman , Atul Gupta
发明人： Russell J. Low , William T. Weaver , Nicholas P. T. Bateman , Atul Gupta
IPC分类号： H01L21/425
CPC分类号： H01L21/266 , H01J37/09 , H01J37/3171 , H01J2237/0458 , H01J2237/31711 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
摘要翻译：公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分。

6. 发明授权

US08598547B2 Handling beam glitches during ion implantation of workpieces 有权
标题翻译：在离子植入工件期间处理光束毛刺
公开(公告)号：US08598547B2
公开(公告)日：2013-12-03
申请号：US13170815
申请日：2011-06-28
申请人： Russell J. Low , Atul Gupta , William T. Weaver
发明人： Russell J. Low , Atul Gupta , William T. Weaver
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/20 , G21K5/10 , H01J37/304 , H01J37/3045 , H01J37/3171 , H01J2237/20285 , H01J2237/31703 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.
摘要翻译：可以补偿工件（例如太阳能电池）的离子注入期间的毛刺。在一种情况下，在第一速度的第一次通过期间植入工件。该第一次通过导致工件中不均匀剂量的区域。然后在第二次通过期间以第二速度植入工件。第二速度与第一速度不同。第二速度可以对应于整个工件或者对应于工件中不均匀剂量的区域。

7. 发明授权

US08461030B2 Apparatus and method for controllably implanting workpieces 有权
公开(公告)号：US08461030B2
公开(公告)日：2013-06-11
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

8. 发明申请

US20120043712A1 MECHANISM AND METHOD FOR ALIGNING A WORKPIECE TO A SHADOW MASK 审中-公开
标题翻译：将工件对准阴影掩模的机制和方法
公开(公告)号：US20120043712A1
公开(公告)日：2012-02-23
申请号：US12858131
申请日：2010-08-17
申请人： William Weaver , Russell J. Low , Steven M. Anella , Robert J. Mitchell
发明人： William Weaver , Russell J. Low , Steven M. Anella , Robert J. Mitchell
IPC分类号： H01L21/68 , B23Q3/00
CPC分类号： H01J37/20 , H01J37/3171 , H01J37/32412 , H01J2237/20207 , H01J2237/31711 , Y10T29/49895
摘要： A workpiece support is disclosed in which the platen, and thus the workpiece, can be tilted about at least two axis, which allows gravity to align the workpiece with a shadow mask in two orthogonal directions. In some embodiments, the workpiece support utilizes an axis of rotation that is orthogonal to the surface of the workpiece, in conjunction with a second axis that is parallel to the surface of the workpiece. Additionally, a method of aligning the workpiece using this workpiece support is also disclosed. Further, the workpiece support can be utilized to remove the workpiece from the support after implantation is completed.
摘要翻译：公开了一种工件支撑件，其中压板以及因此工件可以围绕至少两个轴线倾斜，这允许重力在两个正交方向上将工件与荫罩对准。在一些实施例中，工件支撑件与平行于工件表面的第二轴线结合使用与工件表面正交的旋转轴线。此外，还公开了使用该工件支撑件对准工件的方法。此外，可以利用工件支撑件在植入完成之后将工件从支撑件移除。

9. 发明授权

US08461556B2 Using beam blockers to perform a patterned implant of a workpiece 有权
标题翻译：使用光束阻挡器来执行工件的图案化植入
公开(公告)号：US08461556B2
公开(公告)日：2013-06-11
申请号：US12877666
申请日：2010-09-08
申请人： Daniel Distaso , Russell J. Low
发明人： Daniel Distaso , Russell J. Low
IPC分类号： G21K5/10
CPC分类号： H01J37/3026 , H01J37/3171 , H01J2237/31703
摘要： Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second current regions. These current regions may be unequal. The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.
摘要翻译：离子束阻挡单元中的阻挡剂选择性地阻挡或修整离子束。在一种情况下，离子束具有第一电流区域和第二电流区域。这些当前区域可能不相等。然后将离子束植入工件中以形成具有不同剂量的区域。可以扫描工件以使其整个表面被植入。

10. 发明授权

US08330127B2 Flexible ion source 有权
标题翻译：柔性离子源
公开(公告)号：US08330127B2
公开(公告)日：2012-12-11
申请号：US12080028
申请日：2008-03-31
申请人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
发明人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
IPC分类号： G21K5/00
CPC分类号： H01J27/022 , H01J37/04 , H01J37/08 , H01J37/16 , H01J2237/082
摘要： Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
摘要翻译：公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。将优选由钨构成的两个衬垫元件插入到离子源室中，一个放置在两个侧壁中的每一个上。这些插入物被电偏置以便引起垂直于所施加的磁场的电场。已经意外地发现这种布置不仅增加了离子室壳体的寿命，而且延长了间接加热的阴极（IHC）和排斥器的使用寿命。此外，使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子，或者在较低功率水平下产生相等数量的离子。

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