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    • 9. 发明申请
    • INTEGRATED CIRCUIT HAVING A REPLACEMENT GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME
    • 具有替代盖结构的集成电路及其制造方法
    • US20140035010A1
    • 2014-02-06
    • US13562659
    • 2012-07-31
    • Xiuyu CaiRuilong XieKangguo ChengAli Khakifirooz
    • Xiuyu CaiRuilong XieKangguo ChengAli Khakifirooz
    • H01L29/772H01L21/283
    • H01L21/76834H01L21/28518H01L21/76897H01L29/165H01L29/6653H01L29/66545H01L29/66628H01L29/7834
    • A method for fabricating an integrated circuit includes forming a temporary gate structure on a semiconductor substrate. The temporary gate structure includes a temporary gate material disposed between two spacer structures. The method further includes forming a first directional silicon nitride liner overlying the temporary gate structure and the semiconductor substrate, etching the first directional silicon nitride liner overlying the temporary gate structure and the temporary gate material to form a trench between the spacer structures, while leaving the directional silicon nitride liner overlying the semiconductor substrate in place, and forming a replacement metal gate structure in the trench. An integrated circuit includes a replacement metal gate structure overlying a semiconductor substrate, a silicide region overlying the semiconductor substrate and positioned adjacent the replacement gate structure; a directional silicon nitride liner overlying a portion of the replacement gate structure; and a contact plug in electrical communication with the silicide region.
    • 一种用于制造集成电路的方法包括在半导体衬底上形成临时栅极结构。 临时栅极结构包括设置在两个间隔结构之间的临时栅极材料。 该方法还包括形成覆盖临时栅极结构和半导体衬底的第一定向硅氮化物衬垫,蚀刻覆盖临时栅极结构的第一定向氮化硅衬底和临时栅极材料,以在间隔物结构之间形成沟槽,同时留下 定向氮化硅衬垫覆盖半导体衬底就位,并在沟槽中形成置换金属栅极结构。 集成电路包括覆盖半导体衬底的替代金属栅极结构,覆盖半导体衬底并邻近置换栅结构定位的硅化物区; 覆盖所述替代栅极结构的一部分的定向氮化硅衬垫; 以及与硅化物区域电连通的接触插塞。