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1. 发明授权

US08772168B2 Formation of the dielectric cap layer for a replacement gate structure 有权
标题翻译：用于替代栅极结构的电介质盖层的形成
公开(公告)号：US08772168B2
公开(公告)日：2014-07-08
申请号：US13353708
申请日：2012-01-19
申请人： Ruilong Xie , Balasubramanian Pranatharthi Haran , David V. Horak , Su Chen Fan
发明人： Ruilong Xie , Balasubramanian Pranatharthi Haran , David V. Horak , Su Chen Fan
IPC分类号： H01L21/311
CPC分类号： H01L29/42376 , H01L21/28088 , H01L29/4966 , H01L29/66545 , H01L29/78
摘要： Gate to contact shorts are reduced by forming dielectric caps in replaced gate structures. Embodiments include forming a replaced gate structure on a substrate, the replaced gate structure including an ILD having a cavity, a first metal on a top surface of the ILD and lining the cavity, and a second metal on the first metal and filling the cavity, planarizing the first and second metals, forming an oxide on the second metal, removing the oxide, recessing the first and second metals in the cavity, forming a recess, and filling the recess with a dielectric material. Embodiments further include dielectric caps having vertical sidewalls, a trapezoidal shape, a T-shape, or a Y-shape.
摘要翻译：通过在更换的栅极结构中形成电介质盖来减少接触短路的栅极。实施例包括在衬底上形成替代的栅极结构，所述替换的栅极结构包括具有空腔的ILD，在ILD的顶表面上的第一金属和衬里的空腔，以及在第一金属上填充空腔的第二金属，平面化第一和第二金属，在第二金属上形成氧化物，去除氧化物，使空腔中的第一和第二金属凹陷，形成凹陷，并用电介质材料填充凹槽。实施例还包括具有垂直侧壁，梯形形状，T形或Y形的电介质盖。

2. 发明申请

US20130328111A1 RECESSING AND CAPPING OF GATE STRUCTURES WITH VARYING METAL COMPOSITIONS 有权
标题翻译：具有不同金属组成的门结构的吸附和封盖
公开(公告)号：US20130328111A1
公开(公告)日：2013-12-12
申请号：US13491857
申请日：2012-06-08
申请人： Ruilong Xie , David V. Horak , Su Chen Fan , Pranatharthiharan Haran Balasubramanian
发明人： Ruilong Xie , David V. Horak , Su Chen Fan , Pranatharthiharan Haran Balasubramanian
IPC分类号： H01L21/28 , H01L29/78
CPC分类号： H01L29/78 , H01L21/28 , H01L21/28132 , H01L21/28247 , H01L21/76897 , H01L29/401 , H01L29/4236 , H01L29/42372 , H01L29/66545 , H01L29/66553
摘要： A method for recessing and capping metal gate structures is disclosed. Embodiments include: forming a dummy gate electrode on a substrate; forming a hard mask over the dummy gate electrode; forming spacers on opposite sides of the dummy gate electrode and the hard mask; forming an interlayer dielectric (ILD) over the substrate adjacent the spacers; forming a first trench in the ILD down to the dummy gate electrode; removing the dummy gate electrode to form a second trench below the first trench; forming a metal gate structure in the first and second trenches; and forming a gate cap over the metal gate structure.
摘要翻译：公开了一种用于凹陷和封盖金属栅极结构的方法。实施例包括：在基板上形成虚拟栅电极; 在虚拟栅电极上形成硬掩模; 在虚拟栅电极和硬掩模的相对侧上形成间隔物; 在邻近所述间隔物的衬底上形成层间电介质（ILD）; 在所述ILD中形成第一沟槽至所述伪栅电极; 去除所述伪栅电极以在所述第一沟槽下方形成第二沟槽; 在所述第一和第二沟槽中形成金属栅极结构; 以及在所述金属栅极结构上形成栅极盖。

3. 发明授权

US08679909B2 Recessing and capping of gate structures with varying metal compositions 有权
标题翻译：具有不同金属成分的门结构的凹陷和封盖
公开(公告)号：US08679909B2
公开(公告)日：2014-03-25
申请号：US13491857
申请日：2012-06-08
申请人： Ruilong Xie , David V. Horak , Su Chen Fan , Pranatharthiharan Haran Balasubramanian
发明人： Ruilong Xie , David V. Horak , Su Chen Fan , Pranatharthiharan Haran Balasubramanian
IPC分类号： H01L21/338
CPC分类号： H01L29/78 , H01L21/28 , H01L21/28132 , H01L21/28247 , H01L21/76897 , H01L29/401 , H01L29/4236 , H01L29/42372 , H01L29/66545 , H01L29/66553
摘要： A method for recessing and capping metal gate structures is disclosed. Embodiments include: forming a dummy gate electrode on a substrate; forming a hard mask over the dummy gate electrode; forming spacers on opposite sides of the dummy gate electrode and the hard mask; forming an interlayer dielectric (ILD) over the substrate adjacent the spacers; forming a first trench in the ILD down to the dummy gate electrode; removing the dummy gate electrode to form a second trench below the first trench; forming a metal gate structure in the first and second trenches; and forming a gate cap over the metal gate structure.
摘要翻译：公开了一种用于凹陷和封盖金属栅极结构的方法。实施例包括：在基板上形成虚拟栅电极; 在虚拟栅电极上形成硬掩模; 在虚拟栅电极和硬掩模的相对侧上形成间隔物; 在邻近所述间隔物的衬底上形成层间电介质（ILD）; 在所述ILD中形成第一沟槽至所述伪栅电极; 去除所述伪栅电极以在所述第一沟槽下方形成第二沟槽; 在所述第一和第二沟槽中形成金属栅极结构; 以及在所述金属栅极结构上形成栅极帽。

4. 发明授权

US08679968B2 Method for forming a self-aligned contact opening by a lateral etch 有权
标题翻译：通过横向蚀刻形成自对准接触开口的方法
公开(公告)号：US08679968B2
公开(公告)日：2014-03-25
申请号：US13471846
申请日：2012-05-15
申请人： Ruilong Xie , Su Chen Fan , Pranatharthiharan Haran Balasubramanian , David Vaclav Horak , Ponoth Shom
发明人： Ruilong Xie , Su Chen Fan , Pranatharthiharan Haran Balasubramanian , David Vaclav Horak , Ponoth Shom
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/823475 , H01L21/76897
摘要： A self-aligned source/drain contact formation process without spacer or cap loss is described. Embodiments include providing two gate stacks, each having spacers on opposite sides, and an interlayer dielectric (ILD) over the two gate stacks and in a space therebetween, forming a vertical contact opening within the ILD between the two gate stacks, and laterally removing ILD between the two gate stacks from the vertical contact opening toward the spacers, to form a contact hole.
摘要翻译：描述了没有间隔物或盖损失的自对准源极/漏极接触形成过程。实施例包括提供两个栅极堆叠，每个栅极堆叠在相对的两侧具有间隔物，以及位于两个栅极堆叠之间并在它们之间的空间中的层间电介质（ILD），在两个栅极堆叠之间的ILD内形成垂直接触开口，并横向移除ILD 在两个栅极堆叠之间从垂直接触开口朝向间隔件，形成接触孔。

5. 发明申请

US20130307087A1 METHOD FOR FORMING A SELF-ALIGNED CONTACT OPENING BY A LATERAL ETCH 有权
标题翻译：通过侧向蚀刻形成自对准接触开口的方法
公开(公告)号：US20130307087A1
公开(公告)日：2013-11-21
申请号：US13471846
申请日：2012-05-15
申请人： Ruilong Xie , Su Chen Fan , Pranatharthiharan Haran Balasubramanian , David Vaclav Horak , Ponoth Shom
发明人： Ruilong Xie , Su Chen Fan , Pranatharthiharan Haran Balasubramanian , David Vaclav Horak , Ponoth Shom
IPC分类号： H01L27/088 , H01L21/311
CPC分类号： H01L21/823475 , H01L21/76897
摘要： A self-aligned source/drain contact formation process without spacer or cap loss is described. Embodiments include providing two gate stacks, each having spacers on opposite sides, and an interlayer dielectric (ILD) over the two gate stacks and in a space therebetween, forming a vertical contact opening within the ILD between the two gate stacks, and laterally removing ILD between the two gate stacks from the vertical contact opening toward the spacers, to form a contact hole.
摘要翻译：描述了没有间隔物或盖损失的自对准源极/漏极接触形成过程。实施例包括提供两个栅极堆叠，每个栅极堆叠在相对的两侧具有间隔物，以及位于两个栅极堆叠之间并在它们之间的空间中的层间电介质（ILD），在两个栅极堆叠之间的ILD内形成垂直接触开口，并横向移除ILD 在两个栅极堆叠之间从垂直接触开口朝向间隔件，形成接触孔。

6. 发明授权

US08691696B2 Methods for forming an integrated circuit with straightened recess profile 有权
标题翻译：用于形成具有拉直凹槽轮廓的集成电路的方法
公开(公告)号：US08691696B2
公开(公告)日：2014-04-08
申请号：US13476860
申请日：2012-05-21
申请人： Xiuyu Cai , Xunyuan Zhang , Ruilong Xie , Errol T. Ryan , John Iacoponi
发明人： Xiuyu Cai , Xunyuan Zhang , Ruilong Xie , Errol T. Ryan , John Iacoponi
IPC分类号： H01L21/311
CPC分类号： H01L21/311 , H01L21/3105 , H01L21/31116 , H01L21/76801 , H01L21/76816 , H01L21/76828 , H01L21/76831 , H01L29/66545
摘要： Methods are provided for forming an integrated circuit. In an embodiment, the method includes forming a sacrificial mandrel overlying a base substrate. Sidewall spacers are formed adjacent sidewalls of the sacrificial mandrel. The sidewall spacers have a lower portion that is proximal to the base substrate, and the lower portion has a substantially perpendicular outer surface relative to the base substrate. The sidewall spacers also have an upper portion that is spaced from the base substrate. The upper portion has a sloped outer surface. A first dielectric layer is formed overlying the base substrate and is conformal to at least a portion of the upper portion of the sidewall spacers. The upper portion of the sidewall spacers is removed after forming the first dielectric layer to form a recess having a re-entrant profile in the first dielectric layer. The re-entrant profile of the recess is straightened.
摘要翻译：为形成集成电路提供了方法。在一个实施例中，该方法包括形成覆盖在基底衬底上的牺牲心轴。侧壁间隔件形成在牺牲心轴的相邻侧壁处。侧壁间隔件具有靠近基底基底的下部，并且下部具有相对于基底的基本垂直的外表面。侧壁间隔物还具有与基底基板间隔开的上部。上部具有倾斜的外表面。第一电介质层形成在基底衬底上，并且与侧壁间隔物的上部的至少一部分共形。在形成第一介电层之后去除侧壁间隔物的上部，以在第一介电层中形成具有凹入轮廓的凹部。凹槽的重新设计简洁直观。

7. 发明申请

US20140070285A1 METHODS OF FORMING SEMICONDUCTOR DEVICES WITH SELF-ALIGNED CONTACTS AND THE RESULTING DEVICES 有权
标题翻译：用自对准接触形成半导体器件的方法和结果器件
公开(公告)号：US20140070285A1
公开(公告)日：2014-03-13
申请号：US13611652
申请日：2012-09-12
申请人： Ruilong Xie , Ponoth Shom , Xiuyu Cai , Balasubramanian Pranatharthiharan , Robert J. Miller
发明人： Ruilong Xie , Ponoth Shom , Xiuyu Cai , Balasubramanian Pranatharthiharan , Robert J. Miller
IPC分类号： H01L21/28 , H01L29/78
CPC分类号： H01L29/66545 , H01L21/76897 , H01L21/823431 , H01L21/823437 , H01L21/823468 , H01L29/6653 , H01L29/66553 , H01L29/66628 , H01L29/66636
摘要： One method includes forming a sacrificial gate structure above a substrate, forming a first sidewall spacer adjacent a sacrificial gate electrode, removing a portion of the first sidewall spacer to expose a portion of the sidewalls of the sacrificial gate electrode, and forming a liner layer on the exposed sidewalls of the sacrificial gate electrode and above a residual portion of the first sidewall spacer. The method further includes forming a first layer of insulating material above the liner layer, forming a second sidewall spacer above the first layer of insulating material and adjacent the liner layer, performing an etching process to remove the second sidewall spacer and sacrificial gate cap layer to expose an upper surface of the sacrificial gate electrode, removing the sacrificial gate electrode to define a gate cavity at least partially defined laterally by the liner layer, and forming a replacement gate structure in the cavity.
摘要翻译：一种方法包括在衬底上形成牺牲栅极结构，形成邻近牺牲栅电极的第一侧壁间隔物，去除第一侧壁间隔物的一部分以暴露牺牲栅电极的侧壁的一部分，以及在衬底上形成衬层牺牲栅电极的暴露的侧壁和第一侧壁间隔物的残留部分之上。该方法还包括在衬垫层之上形成绝缘材料的第一层，在第一绝缘材料层之上形成第二侧壁隔离层并与衬里层相邻，执行蚀刻工艺以除去第二侧壁间隔物和牺牲栅极盖层，暴露牺牲栅电极的上表面，去除牺牲栅电极以限定通过衬层至少部分地限定的侧壁的栅极腔，以及在空腔中形成替换栅极结构。

8. 发明授权

US09117877B2 Methods of forming a dielectric cap layer on a metal gate structure 有权
标题翻译：在金属栅极结构上形成电介质盖层的方法
公开(公告)号：US09117877B2
公开(公告)日：2015-08-25
申请号：US13350908
申请日：2012-01-16
申请人： Xiuyu Cai , Ruilong Xie , Jin Cho , John Iacoponi
发明人： Xiuyu Cai , Ruilong Xie , Jin Cho , John Iacoponi
IPC分类号： H01L21/311 , H01L21/762 , H01L29/78 , H01L29/66
CPC分类号： H01L29/785 , H01L21/76232 , H01L29/0649 , H01L29/0653 , H01L29/66795
摘要： Disclosed herein are various methods of forming isolation structures on FinFETs and other semiconductor devices, and the resulting devices that have such isolation structures. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define a fin for a FinFET device, forming a layer of insulating material in the trenches, wherein the layer of insulating material covers a lower portion of the fin but not an upper portion of the fin, forming a protective material on the upper portion of the fin, and performing a heating process in an oxidizing ambient to form a thermal oxide region on the covered lower portion of the fin.
摘要翻译：本文公开了在FinFET和其它半导体器件上形成隔离结构的各种方法，以及具有这种隔离结构的所得器件。在一个示例中，该方法包括在半导体衬底中形成多个间隔开的沟槽，其中沟槽限定用于FinFET器件的鳍片，在沟槽中形成绝缘材料层，其中绝缘材料层覆盖下部翅片的一部分而不是翅片的上部，在翅片的上部形成保护材料，并且在氧化环境中进行加热处理，以在翅片的被覆盖的下部形成热氧化物区域。

9. 发明申请

US20140035010A1 INTEGRATED CIRCUIT HAVING A REPLACEMENT GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有替代盖结构的集成电路及其制造方法
公开(公告)号：US20140035010A1
公开(公告)日：2014-02-06
申请号：US13562659
申请日：2012-07-31
申请人： Xiuyu Cai , Ruilong Xie , Kangguo Cheng , Ali Khakifirooz
发明人： Xiuyu Cai , Ruilong Xie , Kangguo Cheng , Ali Khakifirooz
IPC分类号： H01L29/772 , H01L21/283
CPC分类号： H01L21/76834 , H01L21/28518 , H01L21/76897 , H01L29/165 , H01L29/6653 , H01L29/66545 , H01L29/66628 , H01L29/7834
摘要： A method for fabricating an integrated circuit includes forming a temporary gate structure on a semiconductor substrate. The temporary gate structure includes a temporary gate material disposed between two spacer structures. The method further includes forming a first directional silicon nitride liner overlying the temporary gate structure and the semiconductor substrate, etching the first directional silicon nitride liner overlying the temporary gate structure and the temporary gate material to form a trench between the spacer structures, while leaving the directional silicon nitride liner overlying the semiconductor substrate in place, and forming a replacement metal gate structure in the trench. An integrated circuit includes a replacement metal gate structure overlying a semiconductor substrate, a silicide region overlying the semiconductor substrate and positioned adjacent the replacement gate structure; a directional silicon nitride liner overlying a portion of the replacement gate structure; and a contact plug in electrical communication with the silicide region.
摘要翻译：一种用于制造集成电路的方法包括在半导体衬底上形成临时栅极结构。临时栅极结构包括设置在两个间隔结构之间的临时栅极材料。该方法还包括形成覆盖临时栅极结构和半导体衬底的第一定向硅氮化物衬垫，蚀刻覆盖临时栅极结构的第一定向氮化硅衬底和临时栅极材料，以在间隔物结构之间形成沟槽，同时留下定向氮化硅衬垫覆盖半导体衬底就位，并在沟槽中形成置换金属栅极结构。集成电路包括覆盖半导体衬底的替代金属栅极结构，覆盖半导体衬底并邻近置换栅结构定位的硅化物区; 覆盖所述替代栅极结构的一部分的定向氮化硅衬垫; 以及与硅化物区域电连通的接触插塞。

10. 发明申请

US20130307032A1 METHODS OF FORMING CONDUCTIVE CONTACTS FOR A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成半导体器件导电性接触的方法
公开(公告)号：US20130307032A1
公开(公告)日：2013-11-21
申请号：US13473284
申请日：2012-05-16
申请人： Vimal Kamineni , Ruilong Xie
发明人： Vimal Kamineni , Ruilong Xie
IPC分类号： H01L29/78 , H01L23/48 , H01L21/768
CPC分类号： H01L23/5283 , H01L21/28562 , H01L21/76849 , H01L23/485 , H01L23/5226 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： One illustrative method disclosed herein involves forming a contact opening in a layer of insulating material, forming a layer of conductive material above the layer of insulating material that overfills the contact opening, performing at least one chemical mechanical polishing process to remove portions of the conductive material positioned outside of the contact opening and thereby define a conductive contact positioned in the contact opening and, after performing the chemical mechanical polishing process, performing a selective metal deposition process to selectively form additional metal material on an upper surface of the conductive contact.
摘要翻译：本文公开的一种说明性方法包括在绝缘材料层中形成接触开口，在覆盖接触开口的绝缘材料层之上形成导电材料层，执行至少一种化学机械抛光工艺以去除部分导电材料位于接触开口的外侧，从而限定位于接触开口中的导电接触，并且在执行化学机械抛光工艺之后，执行选择性金属沉积工艺以在导电接触件的上表面上选择性地形成额外的金属材料。

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