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    • 1. 发明申请
    • DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR
    • 用于感应耦合等离子体(ICP)反应器的动态离子辐射和离子射孔
    • US20120305184A1
    • 2012-12-06
    • US13455342
    • 2012-04-25
    • Saravjeet SinghGraeme Jamieson ScottAjay Kumar
    • Saravjeet SinghGraeme Jamieson ScottAjay Kumar
    • H01L21/3065
    • H01J37/321H01J37/32623H01J37/32633H01J2237/334
    • Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
    • 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体,设置在处理区域中并具有基板接收表面的基板支撑件,设置在室主体面向基板接收表面的壁上的等离子体源,离子基屏蔽 设置在等离子体源和基板接收表面之间,以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸,形状和/或中心轴位置可以使用插入件来改变。
    • 2. 发明授权
    • Dynamic ion radical sieve and ion radical aperture for an inductively coupled plasma (ICP) reactor
    • 用于电感耦合等离子体(ICP)反应器的动态离子基团筛和离子基团孔
    • US09287093B2
    • 2016-03-15
    • US13455342
    • 2012-04-25
    • Saravjeet SinghGraeme Jamieson ScottAjay Kumar
    • Saravjeet SinghGraeme Jamieson ScottAjay Kumar
    • C23C16/00H01L21/306H01J37/32
    • H01J37/321H01J37/32623H01J37/32633H01J2237/334
    • Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
    • 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体,设置在处理区域中并具有基板接收表面的基板支撑件,设置在室主体面向基板接收表面的壁上的等离子体源,离子基屏蔽 设置在等离子体源和基板接收表面之间,以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸,形状和/或中心轴位置可以使用插入件来改变。