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1. 发明授权

US06444482B1 Method of monitoring power supplied to heat a substrate 失效
标题翻译：监测供应以加热基板的功率的方法
公开(公告)号：US06444482B1
公开(公告)日：2002-09-03
申请号：US09525777
申请日：2000-03-15
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C1646
CPC分类号： H01L28/84 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/02667 , H01L21/2022 , H01L21/3205 , H01L22/26 , Y10S148/003 , Y10S148/122 , Y10S438/964
摘要： Methods for monitoring power supplied to a substrate to form a doped or undoped crystalline semiconductor material are disclosed. The methods include providing a layer of an amorphous semiconductor material, doped or undoped, on a substrate and heating the substrate while monitoring the power applied to a heating element to heat the substrate so as to maintain a desired temperature. A decrease in the power supplied to the substrate is indicative of a conversion of the amorphous semiconductor material to a crystalline form thereof, at which time the power supplied to the heating element is terminated. By selecting the degree of crystallinity of the layer of doped or undoped amorphous semiconductor material on a substrate, the grain size of the resulting crystalline material can be controlled.
摘要翻译：公开了用于监测提供给衬底以形成掺杂或未掺杂的结晶半导体材料的功率的方法。所述方法包括在衬底上提供掺杂或未掺杂的非晶半导体材料层并加热衬底，同时监测施加到加热元件的功率以加热衬底以便保持所需温度。提供给基板的功率的降低表示非晶半导体材料转变为其结晶形式，此时提供给加热元件的功率终止。通过在衬底上选择掺杂或未掺杂的非晶半导体材料层的结晶度，可以控制所得结晶材料的晶粒尺寸。

2. 发明授权

US06177127B1 Method of monitoring emissivity 失效
标题翻译：监测发射率的方法
公开(公告)号：US06177127B1
公开(公告)日：2001-01-23
申请号：US09191236
申请日：1998-11-13
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C1646
CPC分类号： H01L28/84 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/02667 , H01L21/2022 , H01L21/3205 , H01L22/26 , Y10S148/003 , Y10S148/122 , Y10S438/964
摘要： A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process. The power supplied to heat the substrate to a desired temperature can also be monitored, in that a drop in required power is indicative of the formation of polysilicon. By selecting the degree of crystallinity of the layer of doped or undoped amorphous silicon on a substrate, the grain size of the resulting HSG polysilicon can be controlled.
摘要翻译：可靠地形成期望表面粗糙度的多晶硅的方法包括在衬底上提供掺杂或未掺杂的非晶硅层并加热所述衬底，同时监测所述衬底的发射并将所监测的发射与可归因于所采用的加热方式的预期发射。不能归因于加热方式的监测发射的增加表明非晶硅层向粗多晶硅的转变。不受加热制度影响的监测排放的减少表明向多晶硅平滑过渡。监测发射的增加和减少可以用于在形成期望的多晶硅表面粗糙度的时候终止加热状态，或者仅仅被动地监视该过程。为了将衬底加热到所需温度，提供的功率也可以被监测，因为所需功率的下降指示多晶硅的形成。通过选择衬底上掺杂或未掺杂的非晶硅层的结晶度，可以控制得到的HSG多晶硅的晶粒尺寸。

3. 发明授权

US5962065A Method of forming polysilicon having a desired surface roughness 失效
标题翻译：形成具有所需表面粗糙度的多晶硅的方法
公开(公告)号：US5962065A
公开(公告)日：1999-10-05
申请号：US922958
申请日：1997-09-03
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C16/24 , C23C16/56 , H01L21/20 , H01L21/3205 , H01L21/66 , C23C16/46
CPC分类号： H01L22/26 , C23C16/24 , C23C16/56 , H01L21/3205 , H01L21/2022 , Y10S438/964
摘要： A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process.
摘要翻译：可靠地形成期望表面粗糙度的多晶硅的方法包括在衬底上提供掺杂或未掺杂的非晶硅层并加热所述衬底，同时监测所述衬底的发射并将所监测的发射与可归因于所采用的加热方式的预期发射。不能归因于加热方式的监测发射的增加表明非晶硅层向粗多晶硅的转变。不受加热制度影响的监测排放的减少表明向多晶硅平滑过渡。监测发射的增加和减少可以用于在形成期望的多晶硅表面粗糙度的时候终止加热状态，或者仅仅被动地监视该过程。

4. 发明授权

US5759262A Method of forming hemispherical grained silicon 失效
标题翻译：形成半球形晶粒硅的方法
公开(公告)号：US5759262A
公开(公告)日：1998-06-02
申请号：US831181
申请日：1997-04-02
申请人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
IPC分类号： C30B25/02 , C30B25/18 , H01L21/02 , C30B31/22
CPC分类号： C30B29/06 , C30B25/18 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
摘要翻译：公开了一种形成HSG的方法，其中在晶片上形成起始材料层，将起始材料层接种种类并使籽晶层退火。接种和退火步骤可以在不同条件下进行，并且可以彼此独立地变化。

5. 发明授权

US5688550A Method of forming polysilicon having a desired surface roughness 失效
标题翻译：形成具有所需表面粗糙度的多晶硅的方法
公开(公告)号：US5688550A
公开(公告)日：1997-11-18
申请号：US572968
申请日：1995-12-15
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C16/24 , C23C16/56 , H01L21/20 , H01L21/3205 , H01L21/66
CPC分类号： H01L22/26 , C23C16/24 , C23C16/56 , H01L21/3205 , H01L21/2022 , Y10S438/964
摘要： A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process.
摘要翻译：可靠地形成期望表面粗糙度的多晶硅的方法包括在衬底上提供掺杂或未掺杂的非晶硅层并加热所述衬底，同时监测所述衬底的发射并将所监测的发射与可归因于所采用的加热方式的预期发射。不能归因于加热方式的监测发射的增加表明非晶硅层向粗多晶硅的转变。不受加热制度影响的监测排放的减少表明向多晶硅平滑过渡。监测发射的增加和减少可以用于在形成期望的多晶硅表面粗糙度的时候终止加热状态，或者仅仅被动地监视该过程。

6. 发明授权

US5634974A Method for forming hemispherical grained silicon 失效
标题翻译：形成半球形晶粒硅的方法
公开(公告)号：US5634974A
公开(公告)日：1997-06-03
申请号：US552828
申请日：1995-11-03
申请人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
IPC分类号： C30B25/02 , C30B25/18 , H01L21/02 , C30B25/04
CPC分类号： C30B29/06 , C30B25/18 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
摘要翻译：公开了一种形成HSG的方法，其中在晶片上形成起始材料层，将起始材料层接种种类并使籽晶层退火。接种和退火步骤可以在不同条件下进行，并且可以彼此独立地变化。

7. 发明授权

US09082714B2 Use of etch process post wordline definition to improve data retention in a flash memory device 有权
标题翻译：使用蚀刻处理后字幕定义来改善闪存设备中的数据保留
公开(公告)号：US09082714B2
公开(公告)日：2015-07-14
申请号：US13993444
申请日：2011-09-22
申请人： Randy J. Koval , Max F. Hineman , Ronald A. Weimer , Vinayak K. Shamanna , Thomas M. Graettinger , William R. Kueber , Christopher Larsen , Alex J. Schrinsky
发明人： Randy J. Koval , Max F. Hineman , Ronald A. Weimer , Vinayak K. Shamanna , Thomas M. Graettinger , William R. Kueber , Christopher Larsen , Alex J. Schrinsky
IPC分类号： H01L21/76 , H01L21/306 , H01L29/51 , H01L29/788 , H01L29/792 , H01L27/115
CPC分类号： H01L21/30604 , H01L21/76 , H01L27/11521 , H01L27/11568 , H01L29/513 , H01L29/788 , H01L29/7881 , H01L29/792
摘要： Embodiments of the present disclosure are directed towards use of an etch process post wordline definition to improve data retention in a flash memory device. In one embodiment, a method includes forming a plurality of wordline structures on a substrate, wherein individual wordline structures of the plurality of wordline structures include a control gate having an electrically conductive material and a cap having an electrically insulative material formed on the control gate, depositing an electrically insulative material to form a liner on a surface of the individual wordline structures, and etching the liner to remove at least a portion of the liner. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例涉及使用蚀刻处理后字幕定义来改善闪存器件中的数据保持。在一个实施例中，一种方法包括在衬底上形成多个字线结构，其中多个字线结构中的各个字线结构包括具有导电材料的控制栅极和在控制栅极上形成有电绝缘材料的盖，沉积电绝缘材料以在单个字线结构的表面上形成衬垫，以及蚀刻衬垫以去除衬垫的至少一部分。可以描述和/或要求保护其他实施例。

8. 发明申请

US20090097320A1 Memory Cells, Electronic Systems, Methods Of Forming Memory Cells, And Methods of Programming Memory Cells 有权
标题翻译：记忆单元，电子系统，形成记忆单元的方法，以及编程记忆单元的方法
公开(公告)号：US20090097320A1
公开(公告)日：2009-04-16
申请号：US11871339
申请日：2007-10-12
申请人： Kyu S. Min , Rhett T. Brewer , Tejas Krishnamohan , Thomas M. Graettinger , D. V. Ramaswamy , Ronald A. Weimer , Arup Bhattacharyya
发明人： Kyu S. Min , Rhett T. Brewer , Tejas Krishnamohan , Thomas M. Graettinger , D. V. Ramaswamy , Ronald A. Weimer , Arup Bhattacharyya
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： G11C16/0483 , B82Y10/00 , G11C11/5671 , G11C16/0475 , G11C2216/06 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/42348 , Y10S977/943
摘要： Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material may be present as a plurality of discrete isolated islands, such as nanodots. Some embodiments include methods of forming memory cells in which two charge-trapping zones are formed over tunnel dielectric, with the zones being vertically displaced relative to one another, and with the zone closest to the tunnel dielectric having deeper traps than the other zone. Some embodiments include electronic systems comprising memory cells. Some embodiments include methods of programming memory cells having vertically-stacked charge-trapping zones.
摘要翻译：一些实施例包括具有通过介电材料彼此间隔开的垂直堆叠的电荷捕获区的存储单元。电介质材料可以包括高k材料。一个或多个电荷捕获区可以包括金属材料。这种金属材料可以作为多个离散的隔离岛存在，例如纳米点。一些实施例包括形成存储器单元的方法，其中在隧道电介质上形成两个电荷捕获区，其中区域相对于彼此垂直位移，并且最靠近隧道电介质的区域具有比另一区更深的陷阱。一些实施例包括包括存储器单元的电子系统。一些实施例包括编程具有垂直堆叠的电荷捕获区的存储器单元的方法。

9. 发明授权

US07489000B2 Capacitor structures with oxynitride layer between capacitor plate and capacitor dielectric layer 有权
标题翻译：在电容器板和电容器介质层之间具有氧氮化物层的电容器结构
公开(公告)号：US07489000B2
公开(公告)日：2009-02-10
申请号：US11358647
申请日：2006-02-21
申请人： Ronald A. Weimer
发明人： Ronald A. Weimer
IPC分类号： H01L29/94
CPC分类号： H01L21/02332 , H01L21/0214 , H01L21/0217 , H01L21/02183 , H01L21/02337 , H01L21/3144 , H01L21/31604 , H01L27/0805 , H01L28/56 , H01L28/84
摘要： Methods for fuming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO) anneal of a polysilicon layer such as an HSG polysilicon capacitor electrode, at less than 800° C., is utilized to grow a thin oxide (oxynitride) layer of about 40 angstroms or less over the polysilicon layer. The NO anneal provides a nitrogen layer at the polysilicon-oxide interface that limits further oxidation of the polysilicon layer and growth of the oxide layer. The oxide layer is exposed to a nitrogen-containing gas to nitridize the surface of the oxide layer and reduce the effective dielectric constant of the oxide layer. The process is particularly useful in forming high K dielectric insulating layers such as tantalum pentoxide over polysilicon. The nitridized oxynitride layer inhibits oxidation of the underlying polysilicon layer in a post-treatment oxidizing anneal of the high K dielectric, thus maintaining the oxide layer as a thin layer over the polysilicon layer.
摘要翻译：提供了在多晶硅衬底上形成电介质层的方法，其用于构建电容器和其它半导体电路部件。利用多晶硅层（例如HSG多晶硅电容器电极）在小于800℃下的自限制性一氧化氮（NO）退火，以在多晶硅上生长约40埃或更少的薄氧化物（氧氮化物）层层。 NO退火在多晶硅 - 氧化物界面处提供氮层，限制多晶硅层的进一步氧化和氧化物层的生长。将氧化物层暴露于含氮气体中以氮化氧化物层的表面并降低氧化物层的有效介电常数。该方法特别适用于在多晶硅上形成高K电介质绝缘层，例如五氧化二钽。氮化氮氧化物层在高K电介质的后处理氧化退火中抑制下面的多晶硅层的氧化，从而将氧化物层保持在多晶硅层上的薄层。

10. 发明授权

US07344755B2 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers 有权
标题翻译：加工微型工件的方法和装置; 调节ALD反应室的方法
公开(公告)号：US07344755B2
公开(公告)日：2008-03-18
申请号：US10646673
申请日：2003-08-21
申请人： Kevin L. Beaman , Ronald A. Weimer , Lyle D. Breiner , Er-Xuan Ping , Trung T. Doan , Cem Basceri , David J. Kubista , Lingyi A. Zheng
发明人： Kevin L. Beaman , Ronald A. Weimer , Lyle D. Breiner , Er-Xuan Ping , Trung T. Doan , Cem Basceri , David J. Kubista , Lingyi A. Zheng
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/4404
摘要： The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCl4 and NH3) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.
摘要翻译：本公开提供了可用于处理微特征工件（例如半导体晶片）的方法和装置。一些方面在分批过程中沉积TiN具有特殊的用途。一个实施方案包括通过同时引入第一和第二预处理前体（例如，TiCl 4和NH 3）来预处理处理室的表面，以将预处理材料沉积在室表面上。在预处理之后，可以将第一微特征工件放置在腔室中，并且可以通过交替地引入量的第一和第二沉积前体将TiN沉积在微特征工件上。

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