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1. 发明授权

US5759262A Method of forming hemispherical grained silicon 失效
标题翻译：形成半球形晶粒硅的方法
公开(公告)号：US5759262A
公开(公告)日：1998-06-02
申请号：US831181
申请日：1997-04-02
申请人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
IPC分类号： C30B25/02 , C30B25/18 , H01L21/02 , C30B31/22
CPC分类号： C30B29/06 , C30B25/18 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
摘要翻译：公开了一种形成HSG的方法，其中在晶片上形成起始材料层，将起始材料层接种种类并使籽晶层退火。接种和退火步骤可以在不同条件下进行，并且可以彼此独立地变化。

2. 发明授权

US5634974A Method for forming hemispherical grained silicon 失效
标题翻译：形成半球形晶粒硅的方法
公开(公告)号：US5634974A
公开(公告)日：1997-06-03
申请号：US552828
申请日：1995-11-03
申请人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Randhir P. S. Thakur , Avishai Kepten , Michael Sendler
IPC分类号： C30B25/02 , C30B25/18 , H01L21/02 , C30B25/04
CPC分类号： C30B29/06 , C30B25/18 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
摘要翻译：公开了一种形成HSG的方法，其中在晶片上形成起始材料层，将起始材料层接种种类并使籽晶层退火。接种和退火步骤可以在不同条件下进行，并且可以彼此独立地变化。

3. 发明授权

US06444482B1 Method of monitoring power supplied to heat a substrate 失效
标题翻译：监测供应以加热基板的功率的方法
公开(公告)号：US06444482B1
公开(公告)日：2002-09-03
申请号：US09525777
申请日：2000-03-15
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C1646
CPC分类号： H01L28/84 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/02667 , H01L21/2022 , H01L21/3205 , H01L22/26 , Y10S148/003 , Y10S148/122 , Y10S438/964
摘要： Methods for monitoring power supplied to a substrate to form a doped or undoped crystalline semiconductor material are disclosed. The methods include providing a layer of an amorphous semiconductor material, doped or undoped, on a substrate and heating the substrate while monitoring the power applied to a heating element to heat the substrate so as to maintain a desired temperature. A decrease in the power supplied to the substrate is indicative of a conversion of the amorphous semiconductor material to a crystalline form thereof, at which time the power supplied to the heating element is terminated. By selecting the degree of crystallinity of the layer of doped or undoped amorphous semiconductor material on a substrate, the grain size of the resulting crystalline material can be controlled.
摘要翻译：公开了用于监测提供给衬底以形成掺杂或未掺杂的结晶半导体材料的功率的方法。所述方法包括在衬底上提供掺杂或未掺杂的非晶半导体材料层并加热衬底，同时监测施加到加热元件的功率以加热衬底以便保持所需温度。提供给基板的功率的降低表示非晶半导体材料转变为其结晶形式，此时提供给加热元件的功率终止。通过在衬底上选择掺杂或未掺杂的非晶半导体材料层的结晶度，可以控制所得结晶材料的晶粒尺寸。

4. 发明授权

US06177127B1 Method of monitoring emissivity 失效
标题翻译：监测发射率的方法
公开(公告)号：US06177127B1
公开(公告)日：2001-01-23
申请号：US09191236
申请日：1998-11-13
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C1646
CPC分类号： H01L28/84 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/02667 , H01L21/2022 , H01L21/3205 , H01L22/26 , Y10S148/003 , Y10S148/122 , Y10S438/964
摘要： A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process. The power supplied to heat the substrate to a desired temperature can also be monitored, in that a drop in required power is indicative of the formation of polysilicon. By selecting the degree of crystallinity of the layer of doped or undoped amorphous silicon on a substrate, the grain size of the resulting HSG polysilicon can be controlled.
摘要翻译：可靠地形成期望表面粗糙度的多晶硅的方法包括在衬底上提供掺杂或未掺杂的非晶硅层并加热所述衬底，同时监测所述衬底的发射并将所监测的发射与可归因于所采用的加热方式的预期发射。不能归因于加热方式的监测发射的增加表明非晶硅层向粗多晶硅的转变。不受加热制度影响的监测排放的减少表明向多晶硅平滑过渡。监测发射的增加和减少可以用于在形成期望的多晶硅表面粗糙度的时候终止加热状态，或者仅仅被动地监视该过程。为了将衬底加热到所需温度，提供的功率也可以被监测，因为所需功率的下降指示多晶硅的形成。通过选择衬底上掺杂或未掺杂的非晶硅层的结晶度，可以控制得到的HSG多晶硅的晶粒尺寸。

5. 发明授权

US5962065A Method of forming polysilicon having a desired surface roughness 失效
标题翻译：形成具有所需表面粗糙度的多晶硅的方法
公开(公告)号：US5962065A
公开(公告)日：1999-10-05
申请号：US922958
申请日：1997-09-03
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C16/24 , C23C16/56 , H01L21/20 , H01L21/3205 , H01L21/66 , C23C16/46
CPC分类号： H01L22/26 , C23C16/24 , C23C16/56 , H01L21/3205 , H01L21/2022 , Y10S438/964
摘要： A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process.
摘要翻译：可靠地形成期望表面粗糙度的多晶硅的方法包括在衬底上提供掺杂或未掺杂的非晶硅层并加热所述衬底，同时监测所述衬底的发射并将所监测的发射与可归因于所采用的加热方式的预期发射。不能归因于加热方式的监测发射的增加表明非晶硅层向粗多晶硅的转变。不受加热制度影响的监测排放的减少表明向多晶硅平滑过渡。监测发射的增加和减少可以用于在形成期望的多晶硅表面粗糙度的时候终止加热状态，或者仅仅被动地监视该过程。

6. 发明授权

US5688550A Method of forming polysilicon having a desired surface roughness 失效
标题翻译：形成具有所需表面粗糙度的多晶硅的方法
公开(公告)号：US5688550A
公开(公告)日：1997-11-18
申请号：US572968
申请日：1995-12-15
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C16/24 , C23C16/56 , H01L21/20 , H01L21/3205 , H01L21/66
CPC分类号： H01L22/26 , C23C16/24 , C23C16/56 , H01L21/3205 , H01L21/2022 , Y10S438/964
摘要： A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process.
摘要翻译：可靠地形成期望表面粗糙度的多晶硅的方法包括在衬底上提供掺杂或未掺杂的非晶硅层并加热所述衬底，同时监测所述衬底的发射并将所监测的发射与可归因于所采用的加热方式的预期发射。不能归因于加热方式的监测发射的增加表明非晶硅层向粗多晶硅的转变。不受加热制度影响的监测排放的减少表明向多晶硅平滑过渡。监测发射的增加和减少可以用于在形成期望的多晶硅表面粗糙度的时候终止加热状态，或者仅仅被动地监视该过程。

7. 发明申请

US20060110531A1 Method for depositing a coating having a relatively high dielectric constant onto a substrate 审中-公开
公开(公告)号：US20060110531A1
公开(公告)日：2006-05-25
申请号：US11115027
申请日：2005-04-26
申请人： Jane Chang , You-Sheng Lin , Avishai Kepten , Michael Sendler , Sagy Levy , Robin Bloom
发明人： Jane Chang , You-Sheng Lin , Avishai Kepten , Michael Sendler , Sagy Levy , Robin Bloom
IPC分类号： C23C16/00
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45525 , C23C16/45527 , C23C16/52 , H01L21/02148 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.

8. 发明授权

US06884719B2 Method for depositing a coating having a relatively high dielectric constant onto a substrate 失效
标题翻译：将具有较高介电常数的涂层沉积到基底上的方法
公开(公告)号：US06884719B2
公开(公告)日：2005-04-26
申请号：US10101539
申请日：2002-03-19
申请人： Jane Chang , You-Sheng Lin , Avishai Kepten , Michael Sendler , Sagy Levy , Robin Bloom
发明人： Jane Chang , You-Sheng Lin , Avishai Kepten , Michael Sendler , Sagy Levy , Robin Bloom
IPC分类号： B05D3/02 , C23C16/00 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/469
CPC分类号： C23C16/45527 , C23C16/40 , C23C16/45525 , C23C16/52 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.
摘要翻译：提供了一种用于在诸如半导体晶片的衬底上沉积高k电介质涂层的方法。将基板进行一个或多个反应循环。例如，在典型的反应循环中，将基板加热到一定的沉积温度。此后，在一个实施方案中，将一种或多种反应性有机金属气体前体供应至反应器容器。在一定的氧化温度下，氧化气体也被提供给衬底以氧化和/或致密化层。结果，形成具有等于至少约一个单层的厚度的金属氧化物涂层，并且在一些情况下形成两个或更多个单层。所得到的金属氧化物涂层的介电常数通常大于约4，在某些情况下，介电常数为约10至约80。

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