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1. 发明授权

US07951696B2 Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes 失效
标题翻译：使用非接触印刷方法同时形成N型和P型掺杂区的方法
公开(公告)号：US07951696B2
公开(公告)日：2011-05-31
申请号：US12241396
申请日：2008-09-30
申请人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
发明人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
IPC分类号： H01L21/22
CPC分类号： H01L21/228 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.
摘要翻译：提供了使用非接触印刷方法同时形成具有相反导电性的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：沉积第一液体掺杂剂，该第一液体掺杂剂包括覆盖在半导体材料的第一区域上的第一导电率确定型掺杂元素，并沉积包含第二区域的第二导电率确定型掺杂元素的第二液体掺杂剂的半导体材料。第一导电率确定型掺杂元素和第二导电率确定型掺杂元素具有相反的导电性。第一导电率确定型掺杂剂元素的至少一部分和第二导电率确定型掺杂元素的至少一部分分别同时扩散到第一区域和第二区域中。

2. 发明申请

US20100081264A1 METHODS FOR SIMULTANEOUSLY FORMING N-TYPE AND P-TYPE DOPED REGIONS USING NON-CONTACT PRINTING PROCESSES 失效
标题翻译：使用非接触式印刷工艺同时形成N型和P型掺杂区域的方法
公开(公告)号：US20100081264A1
公开(公告)日：2010-04-01
申请号：US12241396
申请日：2008-09-30
申请人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
发明人： Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
IPC分类号： H01L21/22
CPC分类号： H01L21/228 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.
摘要翻译：提供了使用非接触印刷方法同时形成具有相反导电性的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：沉积第一液体掺杂剂，该第一液体掺杂剂包括覆盖在半导体材料的第一区域上的第一导电率确定型掺杂元素，并且沉积包含第二区域的第二导电性确定型掺杂元素的第二液体掺杂剂的半导体材料。第一导电率确定型掺杂元素和第二导电率确定型掺杂元素具有相反的导电性。第一导电率确定型掺杂剂元素的至少一部分和第二导电率确定型掺杂元素的至少一部分分别同时扩散到第一区域和第二区域中。

3. 发明申请

US20100167511A1 METHODS FOR SIMULTANEOUSLY FORMING DOPED REGIONS HAVING DIFFERENT CONDUCTIVITY-DETERMINING TYPE ELEMENT PROFILES 失效
标题翻译：同时形成具有不同电导率确定型元件型材的区域的方法
公开(公告)号：US20100167511A1
公开(公告)日：2010-07-01
申请号：US12344748
申请日：2008-12-29
申请人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
发明人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L21/2225 , H01L31/022441 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.
摘要翻译：提供了同时形成具有不同导电率确定型元件轮廓的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：将第一导电决定型元件从第一掺杂剂扩散到半导体材料的第一区域中以形成掺杂的第一区域。第二导电率确定型元件同时从第二掺杂剂扩散到半导体材料的第二区域中以形成掺杂的第二区域。第一导电率确定型元件具有与第二导电率确定型元件相同的导电率确定类型。掺杂的第一区域具有与掺杂的第二区域的掺杂物分布不同的掺杂剂分布。

4. 发明授权

US07820532B2 Methods for simultaneously forming doped regions having different conductivity-determining type element profiles 失效
标题翻译：同时形成具有不同导电率确定型元素分布的掺杂区的方法
公开(公告)号：US07820532B2
公开(公告)日：2010-10-26
申请号：US12344748
申请日：2008-12-29
申请人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
发明人： Roger Yu-Kwan Leung , Nicole Rutherford , Anil Bhanap
IPC分类号： H01L21/04
CPC分类号： H01L21/2255 , H01L21/2225 , H01L31/022441 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.
摘要翻译：提供了同时形成具有不同导电率确定型元件轮廓的掺杂区域的方法。在一个示例性实施例中，一种方法包括以下步骤：将第一导电率确定型元件从第一掺杂剂扩散到半导体材料的第一区域中以形成掺杂的第一区域。第二导电率确定型元件同时从第二掺杂剂扩散到半导体材料的第二区域中以形成掺杂的第二区域。第一导电率确定型元件具有与第二导电率确定型元件相同的导电率确定类型。掺杂的第一区域具有与掺杂的第二区域的掺杂物分布不同的掺杂剂分布。

5. 发明申请

US20060141641A1 Repair and restoration of damaged dielectric materials and films 有权
标题翻译：损坏的介质材料和薄膜的修复和修复
公开(公告)号：US20060141641A1
公开(公告)日：2006-06-29
申请号：US10543347
申请日：2004-01-26
申请人： Wenya Fan , Victor Lu , Michael Thomas , Brian Daniels , Tiffany Nguyen , De-Ling Zhou , Ananth Naman , Lei Jin , Anil Bhanap
发明人： Wenya Fan , Victor Lu , Michael Thomas , Brian Daniels , Tiffany Nguyen , De-Ling Zhou , Ananth Naman , Lei Jin , Anil Bhanap
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
摘要翻译：本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

6. 发明授权

US07915181B2 Repair and restoration of damaged dielectric materials and films 有权
标题翻译：损坏的介质材料和薄膜的修复和修复
公开(公告)号：US07915181B2
公开(公告)日：2011-03-29
申请号：US10543347
申请日：2004-01-26
申请人： Wenya Fan , Victor Lu , Michael Thomas , Brian Daniels , Tiffany Nguyen , De-Ling Zhou , Ananth Naman , Lei Jin , Anil Bhanap
发明人： Wenya Fan , Victor Lu , Michael Thomas , Brian Daniels , Tiffany Nguyen , De-Ling Zhou , Ananth Naman , Lei Jin , Anil Bhanap
IPC分类号： H01L21/31
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
摘要翻译：本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

7. 发明申请

US20050095840A1 Repairing damage to low-k dielectric materials using silylating agents 有权
标题翻译：使用硅烷化剂修复对低k电介质材料的损坏
公开(公告)号：US20050095840A1
公开(公告)日：2005-05-05
申请号：US10940682
申请日：2004-09-15
申请人： Anil Bhanap , Teresa Ramos , Nancy Iwamoto , Roger Leung , Ananth Naman
发明人： Anil Bhanap , Teresa Ramos , Nancy Iwamoto , Roger Leung , Ananth Naman
IPC分类号： H01L21/4763
CPC分类号： H01L21/31058 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76801
摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.
摘要翻译：用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。该方法阻止了这些膜中应力诱发的空隙的形成。通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。之后通过通孔和沟槽填充金属并进行退火处理。在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质膜的疏水性。

8. 发明申请

US20070039817A1 Copper-containing pvd targets and methods for their manufacture 审中-公开
标题翻译：含铜的目标及其制造方法
公开(公告)号：US20070039817A1
公开(公告)日：2007-02-22
申请号：US10549401
申请日：2004-08-20
申请人： Brian Daniels , Michael Thomas , Susand Strothers , Wuwen Yi , Anil Bhanap , Eal Lee , Cara Hutchinson , Christie Hausman
发明人： Brian Daniels , Michael Thomas , Susand Strothers , Wuwen Yi , Anil Bhanap , Eal Lee , Cara Hutchinson , Christie Hausman
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/3414 , B32B15/012 , C23C14/16 , C23C14/185 , C23C14/3407 , H01L21/2855 , H01L21/76841 , H01L21/76843 , H01L21/76871 , H01L21/76877 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a physical vapor deposition target containing copper and at least two additional elements selected from Ag, Al, As, Au, B, Be, Ca, Cd, Co, Cr, Fe, Ga, Ge, Hf, Hg, In, Ir, Li, Mg, Mn, Nb, Ni, Pb, Pd, Pt, Sb, Sc, Si, Sn, Ta, Te, Ti, V, W, Zn and Zr, a total amount of the at least two additional elements being from 100 ppm to 10 atomic %. The invention additionally includes thin films and interconnects which contain the mixture of copper and at least two added elements. The invention also includes forming a copper-containing target. A mixture of copper and two or more elements is formed. The mixture is cast by melting and is subsequently cooled to form a billet which is worked utilizing one or both of equal channel angular extrusion and thermomechanical processing to form a target.
摘要翻译：本发明包括含有铜和至少两种选自Ag，Al，As，Au，B，Be，Ca，Cd，Co，Cr，Fe，Ga，Ge，Hf，Hg，In， Ir，Li，Mg，Mn，Nb，Ni，Pb，Pd，Pt，Sb，Sc，Si，Sn，Ta，Te，Ti，V，W，Zn和Zr中的至少两种添加元素为100〜10原子％。本发明还包括含有铜和至少两种添加元素的混合物的薄膜和互连。本发明还包括形成含铜靶。形成铜和两种或更多种元素的混合物。混合物通过熔融铸造并随后冷却以形成坯料，其利用等通道角挤压和热机械加工中的一种或两种来形成靶。

9. 发明申请

US20060216952A1 Vapor phase treatment of dielectric materials 失效
标题翻译：介电材料的气相处理
公开(公告)号：US20060216952A1
公开(公告)日：2006-09-28
申请号：US11086010
申请日：2005-03-22
申请人： Anil Bhanap , Robert Roth , Kikue Burnham , Brian Daniels , Denis Endisch , Ilan Golecki
发明人： Anil Bhanap , Robert Roth , Kikue Burnham , Brian Daniels , Denis Endisch , Ilan Golecki
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/56 , H01L21/02203 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02359 , H01L21/3105 , H01L21/76814
摘要： The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
摘要翻译：本发明涉及一种用于涂覆有机硅酸盐玻璃介电薄膜的表面改性剂组合物的方法。更具体地说，本发明涉及一种在底物上处理硅酸盐或有机硅酸盐电介质膜的方法，该膜包含硅烷醇部分或已从其中除去至少一些先前存在的含碳部分。当膜是多孔的时，该处理向膜中加入含碳部分并且/或密封膜的表面孔。

10. 发明申请

US20060057855A1 Method for making toughening agent materials 有权
公开(公告)号：US20060057855A1
公开(公告)日：2006-03-16
申请号：US10940686
申请日：2004-09-15
申请人： Teresa Ramos , Robert Roth , Anil Bhanap , Paul Apen , Denis Endisch , Brian Daniels , Ananth Naman , Nancy Iwamoto , Roger Leung
发明人： Teresa Ramos , Robert Roth , Anil Bhanap , Paul Apen , Denis Endisch , Brian Daniels , Ananth Naman , Nancy Iwamoto , Roger Leung
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/02216 , H01L21/02126 , H01L21/316 , H01L21/31695 , H01L21/76814 , H01L21/76826
摘要： A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

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