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    • 1. 发明申请
    • Repair and restoration of damaged dielectric materials and films
    • 损坏的介质材料和薄膜的修复和修复
    • US20060141641A1
    • 2006-06-29
    • US10543347
    • 2004-01-26
    • Wenya FanVictor LuMichael ThomasBrian DanielsTiffany NguyenDe-Ling ZhouAnanth NamanLei JinAnil Bhanap
    • Wenya FanVictor LuMichael ThomasBrian DanielsTiffany NguyenDe-Ling ZhouAnanth NamanLei JinAnil Bhanap
    • H01L21/00H01L21/31
    • H01L21/31058H01L21/3105H01L21/76801H01L2924/0002H01L2924/00
    • Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
    • 本文描述了修复材料中空隙的方法,其包括:a)提供具有多个反应性硅烷醇基团的材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法,其包括:a)提供具有多个反应性硅烷醇基团的缺碳材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外,本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法,其包括:a)提供具有多个反应性硅烷醇基团的膜; b)将膜放入等离子体室中; c)将多个含反应性有机部分的硅烷引入所述室中; 和d)允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述,其包括:a)具有多个硅原子的无机材料; 和b)多个含有机部分的硅烷化合物,其中硅烷化合物通过至少一些硅原子与无机材料偶联。
    • 2. 发明授权
    • Repair and restoration of damaged dielectric materials and films
    • 损坏的介质材料和薄膜的修复和修复
    • US07915181B2
    • 2011-03-29
    • US10543347
    • 2004-01-26
    • Wenya FanVictor LuMichael ThomasBrian DanielsTiffany NguyenDe-Ling ZhouAnanth NamanLei JinAnil Bhanap
    • Wenya FanVictor LuMichael ThomasBrian DanielsTiffany NguyenDe-Ling ZhouAnanth NamanLei JinAnil Bhanap
    • H01L21/31
    • H01L21/31058H01L21/3105H01L21/76801H01L2924/0002H01L2924/00
    • Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
    • 本文描述了修复材料中空隙的方法,其包括:a)提供具有多个反应性硅烷醇基团的材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法,其包括:a)提供具有多个反应性硅烷醇基团的缺碳材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外,本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法,其包括:a)提供具有多个反应性硅烷醇基团的膜; b)将膜放入等离子体室中; c)将多个含反应性有机部分的硅烷引入所述室中; 和d)允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述,其包括:a)具有多个硅原子的无机材料; 和b)多个含有机部分的硅烷化合物,其中硅烷化合物通过至少一些硅原子与无机材料偶联。
    • 9. 发明授权
    • Construction element made of a ferromagnetic shape memory material and use thereof
    • 由铁磁形状记忆材料制成的结构元件及其用途
    • US08786276B2
    • 2014-07-22
    • US12995618
    • 2009-06-02
    • Sebastian FaehlerMichael ThomasOleg HeczkoJoerg BuschbeckJeffrey McCord
    • Sebastian FaehlerMichael ThomasOleg HeczkoJoerg BuschbeckJeffrey McCord
    • G01R33/02
    • H01L41/12F03G7/065H01L41/125H01L41/20H01L41/47
    • The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ≦50 μm is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component.
    • 本发明涉及材料科学领域,涉及可用于例如微型部件,微型传感器和微型致动器的部件。 本发明的目的是公开其中发生明显更大的相对长度变化的部件。 该目的是通过铁磁形状记忆材料的一个部件来实现的,该方法是通过一种方法产生的,其中至少一个牺牲层被施加到单晶或双轴织构的衬底上,牺牲层上形成铁磁形状的外延或纹理化层 施加层厚度为< nlE;50μm的记忆材料,随后至少部分去除牺牲层,并且在层施加之间或之后,实现至少铁磁形状记忆材料的结构,使得实现纵横比 其中至少一个长度比层的厚度或部件的最短尺寸大至少3倍。
    • 10. 发明授权
    • Device and method for microstructured plasma treatment
    • 微结构等离子体处理装置及方法
    • US08758697B2
    • 2014-06-24
    • US12996824
    • 2009-06-09
    • Michael ThomasClaus-Peter KlagesAntje Zanker
    • Michael ThomasClaus-Peter KlagesAntje Zanker
    • B01J19/08
    • B29C59/14B29C2059/023H05H1/2406H05H2001/2431
    • The invention relates to a device for the microstructured plasma treatment of a film substrate, especially of a plastic film. Said device comprises a rotatably received cylindrical electrode the surface of which contains or consists of metal, especially chromium, the surface having microstructured depressions, a planar high-voltage electrode the surface of which has a shape complementary to that of the cylindrical electrode and can be arranged on a section of the surface of the cylindrical electrode in a substantially form-fit manner, a transport device for transporting the film substrate to be treated between the surface of the cylindrical electrode and the high-voltage electrode, and a device for feeding a process gas to the surface of the cylindrical electrode and to the interspace between the cylindrical electrode and the high-voltage electrode.
    • 本发明涉及用于薄膜基材,特别是塑料薄膜的微结构等离子体处理的装置。 所述装置包括可旋转接收的圆柱形电极,其表面包含金属,特别是铬,具有微结构凹陷的表面,平坦的高压电极,其表面具有与圆柱形电极的形状互补的形状,并且可以是 以大致成形的方式配置在圆筒形电极的表面的一部分上,用于输送在圆筒形电极的表面和高压电极之间待处理的薄膜基板的输送装置,以及用于输送 处理气体到圆柱形电极的表面和圆柱形电极和高压电极之间的间隙。