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1. 发明申请

US20080085433A1 PROCESS AND CORRESPONDING APPARATUS FOR CONTINUOUSLY PRODUCING GASEOUS HYDROGEN TO BE SUPPLIED TO MICRO FUEL CELLS AND INTEGRATED SYSTEM FOR PRODUCING ELECTRIC ENERGY 有权
标题翻译：用于连续生产供应给微型燃料电池的气化氢的方法和相应装置以及用于生产电能的集成系统
公开(公告)号：US20080085433A1
公开(公告)日：2008-04-10
申请号：US11867893
申请日：2007-10-05
申请人： Roberta Giuffrida , Marco Salanitri , Giuseppe Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
发明人： Roberta Giuffrida , Marco Salanitri , Giuseppe Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
IPC分类号： H01M8/04 , B01J19/00 , H01M8/18
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00828 , B01J2219/00835 , B01J2219/00891 , B01J2219/00907 , C01B3/065 , C01B2203/066 , H01M8/065 , H01M8/1097 , H01M2008/1095 , Y02E60/362
摘要： A process for the production of hydrogen for micro fuel cells, comprises the successive steps of: continuously supplying a catalytic bed with an aqueous solution of sodium borohydride, the catalytic bed being made of at least one metal chosen among cobalt, nickel, platinum, ruthenium with obtainment of hydrogen and of a by-product comprising sodium metaborate, continuously recovering the hydrogen thus obtained and supplying, with said hydrogen as it is as obtained, a micro fuel cell which transforms hydrogen into electric energy. An apparatus provides continuous supply of hydrogen to a micro fuel cell. An integrated system structured for continuously producing and supplying hydrogen to a micro fuel cell and for converting the continuously supplied hydrogen into electric energy.
摘要翻译：用于生产用于微型燃料电池的氢气的方法包括以下连续步骤：连续向催化床提供硼氢化钠水溶液，催化床由选自钴，镍，铂，钌中的至少一种金属制成通过获得氢气和包含偏硼酸钠的副产物，连续回收由此获得的氢气，并将氢气原样供应到将氢气转化为电能的微型燃料电池中。一种装置向微型燃料电池提供氢的连续供应。一种集成系统，其被构造用于连续生产和向微型燃料电池供应氢气，并将连续供应的氢气转化为电能。

2. 发明授权

US08232010B2 Process and corresponding apparatus for continuously producing gaseous hydrogen to be supplied to micro fuel cells and integrated system for producing electric energy 有权
标题翻译：用于连续生产供应给微型燃料电池的气态氢气和用于生产电能的集成系统的工艺和相应的设备
公开(公告)号：US08232010B2
公开(公告)日：2012-07-31
申请号：US11867893
申请日：2007-10-05
申请人： Roberta Giuffrida , Marco Antonio Salanitri , Giuseppe Emanuele Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
发明人： Roberta Giuffrida , Marco Antonio Salanitri , Giuseppe Emanuele Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
IPC分类号： H01M2/16 , H01M8/00
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00828 , B01J2219/00835 , B01J2219/00891 , B01J2219/00907 , C01B3/065 , C01B2203/066 , H01M8/065 , H01M8/1097 , H01M2008/1095 , Y02E60/362
摘要： A process for the production of hydrogen for micro fuel cells, comprises the successive steps of: continuously supplying a catalytic bed with an aqueous solution of sodium borohydride, the catalytic bed being made of at least one metal chosen among cobalt, nickel, platinum, ruthenium with obtainment of hydrogen and of a by-product comprising sodium metaborate, continuously recovering the hydrogen thus obtained and supplying, with said hydrogen as it is as obtained, a micro fuel cell which transforms hydrogen into electric energy. An apparatus provides continuous supply of hydrogen to a micro fuel cell. An integrated system structured for continuously producing and supplying hydrogen to a micro fuel cell and for converting the continuously supplied hydrogen into electric energy.
摘要翻译：用于生产用于微型燃料电池的氢气的方法包括以下连续步骤：连续向催化床提供硼氢化钠水溶液，催化床由选自钴，镍，铂，钌中的至少一种金属制成通过获得氢气和包含偏硼酸钠的副产物，连续回收由此获得的氢气，并将氢气原样供应到将氢气转化为电能的微型燃料电池中。一种装置向微型燃料电池提供氢的连续供应。一种集成系统，其被构造用于连续生产和向微型燃料电池供应氢气，并将连续供应的氢气转化为电能。

3. 发明授权

US07674694B2 Process for manufacturing a TFT device with source and drain regions having gradual dopant profile 有权
标题翻译：用于制造具有逐渐掺杂剂分布的源区和漏区的TFT器件的工艺
公开(公告)号：US07674694B2
公开(公告)日：2010-03-09
申请号：US12031456
申请日：2008-02-14
申请人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Guglielmo Fortunato , Luigi Mariucci , Massimo Cuscuna
发明人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Guglielmo Fortunato , Luigi Mariucci , Massimo Cuscuna
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A process for realizing TFT devices on a substrate comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device.
摘要翻译：用于在衬底上实现TFT器件的工艺包括以下步骤：级联地形成非晶硅层和重掺杂非晶硅层，在设置有开口的重掺杂非晶硅层上形成光刻掩模，通过开口去除重掺杂的非晶硅层，用于实现重掺杂非晶硅层的相对部分，其横截面尺寸随着离开非晶硅层而减小，除去光刻掩模，进行扩散和激活步骤包含在非晶硅层内部的重掺杂非晶硅层的部分中的掺杂物，用于实现所述TFT器件的源极/漏极区域。

4. 发明申请

US20080213961A1 PROCESS FOR MANUFACTURING A TFT DEVICE WITH SOURCE AND DRAIN REGIONS HAVING GRADUAL DOPANT PROFILE 有权
标题翻译：用于生产具有粗糙型配置文件的源和漏区的TFT设备的过程
公开(公告)号：US20080213961A1
公开(公告)日：2008-09-04
申请号：US12031456
申请日：2008-02-14
申请人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Guglielmo Fortunato , Luigi Mariucci , Massimo Cuscuna
发明人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Guglielmo Fortunato , Luigi Mariucci , Massimo Cuscuna
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/78621 , H01L29/66757
摘要： Process for realizing TFT devices on a substrate which comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device.
摘要翻译：一种用于在衬底上实现TFT器件的方法，包括以下步骤：级联地形成非晶硅层和重掺杂非晶硅层，在设置有开口的重掺杂非晶硅层上形成光刻掩模，通过开口去除重掺杂的非晶硅层，用于实现重掺杂非晶硅层的相对部分，其横截面尺寸随着离开非晶硅层而减小，除去光刻掩模，进行扩散和激活步骤包含在非晶硅层内部的重掺杂非晶硅层的部分中的掺杂物，用于实现所述TFT器件的源极/漏极区域。

5. 发明授权

US08575720B2 Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device 有权
标题翻译：用于在惰性基板上集成至少包括无源元件和有源元件的器件以及相应的集成器件的工艺
公开(公告)号：US08575720B2
公开(公告)日：2013-11-05
申请号：US11803716
申请日：2007-05-14
申请人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
发明人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
IPC分类号： H01L27/08
CPC分类号： H01L21/84 , H01L27/12
摘要： A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.
摘要翻译：描述了一种在惰性基板上集成具有至少一个无源部件和一个有源部件的装置的方法。该方法包括：将保护电介质层沉积在惰性衬底上; 在保护电介质层上形成多晶硅岛; 有源元件在多晶硅岛上的集成; 覆盖电介质层沉积在保护电介质层和有源元件上; 将被动元件集成在覆盖介电层上; 在与所述有源部件的有源区域对应的覆盖介电层中实现的开口中形成第一接触结构; 以及与被动部件对应地形成第二接触结构。还描述了通过该方法获得的集成装置。

6. 发明申请

US20080029816A1 Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device 有权
标题翻译：用于在惰性基板上集成至少包括无源元件和有源元件的器件以及相应的集成器件的工艺
公开(公告)号：US20080029816A1
公开(公告)日：2008-02-07
申请号：US11803716
申请日：2007-05-14
申请人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Tramontana
发明人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Tramontana
IPC分类号： H01L27/06 , H01L21/00
CPC分类号： H01L21/84 , H01L27/12
摘要： A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.
摘要翻译：描述了一种在惰性基板上集成具有至少一个无源部件和一个有源部件的装置的方法。该方法包括：在惰性衬底上沉积保护电介质层; 在保护电介质层上形成多晶硅岛; 有源元件在多晶硅岛上的集成; 覆盖电介质层沉积在保护电介质层和有源元件上; 将被动元件集成在覆盖介电层上; 在与所述有源部件的有源区域对应的覆盖介电层中实现的开口中形成第一接触结构; 以及与被动部件对应地形成第二接触结构。还描述了通过该方法获得的集成装置。

7. 发明申请

US20100216046A1 FUEL CELL FORMED IN A SINGLE LAYER OF MONOCRYSTALLINE SILICON AND FABRICATION PROCESS 有权
标题翻译：在单层硅和制造工艺单层中形成的燃料电池
公开(公告)号：US20100216046A1
公开(公告)日：2010-08-26
申请号：US12773190
申请日：2010-05-04
申请人： Giuseppe D'Arrigo , Salvatore Coffa
发明人： Giuseppe D'Arrigo , Salvatore Coffa
IPC分类号： H01M8/24
CPC分类号： H01M8/1004 , H01M8/1097 , H01M2008/1095
摘要： Fuel cells are formed in a single layer of conductive monocrystalline silicon including a succession of electrically isolated conductive silicon bodies separated by narrow parallel trenches etched through the whole thickness of the silicon layer. Semicells in a back-to-back configuration are formed over etch surfaces of the separation trenches. Each semicell formed on the etch surface of one of the silicon bodies forming an elementary cell in cooperation with an opposite semicell formed on the etch surface of the next silicon body of the succession, is separated by an ion exchange membrane resin filling the separation trench between the opposite semicells forming a solid electrolyte of the elementary cell. Each semicell includes a porous conductive silicon region permeable to fluids, extending for a certain depth from the etch surface of the silicon body, at least partially coated by a non passivable metallic material. Each of the porous and fluid permeable regions communicates with a feed duct of a fuel fluid or of oxygen gas that extends parallel to the etch surface inside the conductive silicon body.
摘要翻译：燃料电池形成在单层导电单晶硅中，包括一系列电绝缘的导电硅体，这些导电硅体由通过硅层的整个厚度蚀刻的窄平行沟槽分开。背对背配置的半规格形成在分离沟槽的蚀刻表面上。与形成在下一次硅体的蚀刻表面上形成的相反的半导体协作的形成元件单元的硅体之一上形成的每个半单元被填充分离槽之间的离子交换膜树脂隔开，相反的半细胞形成基本细胞的固体电解质。每个半腔包括可渗透流体的多孔导电硅区域，其延伸至硅体的蚀刻表面一定深度，至少部分地由不可通行的金属材料涂覆。多孔和流体渗透区域中的每一个与在导电硅体内部平行于蚀刻表面延伸的燃料流体或氧气的进料管道连通。

8. 发明申请

US20050017251A1 IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers 有权
标题翻译：基于SWNT（单壁碳纳米管）的IR发光体，半导体SWNTs发光二极管和激光器
公开(公告)号：US20050017251A1
公开(公告)日：2005-01-27
申请号：US10867569
申请日：2004-06-14
申请人： Vincenzo Vinciguerra , Francesco Buonocore , Maria Bevilacqua , Salvatore Coffa
发明人： Vincenzo Vinciguerra , Francesco Buonocore , Maria Bevilacqua , Salvatore Coffa
IPC分类号： H01L33/18 , H01L33/24 , H01L51/30 , H01L27/15
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y20/00 , H01L33/18 , H01L33/24 , Y10S977/75
摘要： The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.
摘要翻译：本发明涉及利用半导体单壁碳纳米管（SWNT）的新型发光体。给出了实验证明，在标准硅技术中，如何设计在红外线IR中发射的发光二极管（LED），其中发光是由半导体单壁碳纳米管（SWNTs）上的电子和空穴的辐射复合引起的， LED）。我们还将展示如何实现这些SWNTs-LED，以便基于SWNT的发射性质建立激光源。还给出了这种装置的制造过程的描述。

9. 发明授权

US06828598B1 Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device 有权
标题翻译：用于电光应用的半导体器件，用于制造所述器件的方法和相应的半导体激光器件
公开(公告)号：US06828598B1
公开(公告)日：2004-12-07
申请号：US09653390
申请日：2000-09-01
申请人： Salvatore Coffa , Sebania Libertino , Mario Saggio , Ferruccio Frisina
发明人： Salvatore Coffa , Sebania Libertino , Mario Saggio , Ferruccio Frisina
IPC分类号： H01L3300
CPC分类号： H01S5/305 , H01S3/1603 , H01S3/1628 , H01S5/3004 , H01S5/3068
摘要： A semiconductor device for electro-optic applications includes a rare-earth ions doped P/N junction integrated on a semiconductor substrate. The semiconductor device may be used to obtain laser action in silicon. The rare-earth ions are in a depletion layer of the doped P/N junction, and are for providing a coherent light source cooperating with a waveguide defined by the doped P/N junction. The doped P/N junction may be the base-collector region of a bipolar transistor, and is reverse biased so that the rare-earth ions provide the coherent light.
摘要翻译：用于电光应用的半导体器件包括集成在半导体衬底上的稀土离子掺杂P / N结。半导体器件可用于在硅中获得激光作用。稀土离子在掺杂的P / N结的耗尽层中，并且用于提供与由掺杂的P / N结限定的波导配合的相干光源。掺杂的P / N结可以是双极晶体管的基极 - 集电极区域，并且被反向偏置，使得稀土离子提供相干光。

10. 发明授权

US06433399B1 Infrared detector device of semiconductor material and manufacturing process thereof 有权
标题翻译：半导体材料红外探测器及其制造工艺
公开(公告)号：US06433399B1
公开(公告)日：2002-08-13
申请号：US09415022
申请日：1999-10-07
申请人： Albert Polman , Nicholas Hamelin , Peter Kik , Salvatore Coffa , Ferruccio Frisina , Mario Saggio
发明人： Albert Polman , Nicholas Hamelin , Peter Kik , Salvatore Coffa , Ferruccio Frisina , Mario Saggio
IPC分类号： H01L310232
CPC分类号： G02B6/12004 , H01L31/0352 , H01L31/103
摘要： An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projecting structure extending on a substrate, including a reflecting layer and laterally delimited by a protection and containment oxide region. At least one portion of the waveguide is formed by the PN junction and has an end fed with light to be detected. The detector device has electrodes disposed laterally to and on the waveguide to enable efficient gathering of charge carriers generated by photoconversion.
摘要翻译：具有由掺杂有稀土离子的第一半导体材料区域和具有相反掺杂型的第二半导体材料区域形成的PN结的红外检测器装置。检测器装置包括由在衬底上延伸的突出结构形成的波导，包括反射层，并由保护和容纳氧化物区域横向界定。波导的至少一部分由PN结形成，并且具有馈送待检测光的端部。检测器装置具有横向设置在波导上的电极，以使得能够有效地收集通过光转换产生的电荷载流子。

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