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    • 8. 发明授权
    • Method and apparatus for chemical-mechanical jet etching of semiconductor structures
    • 半导体结构化学机械喷射蚀刻的方法和装置
    • US06699356B2
    • 2004-03-02
    • US09932396
    • 2001-08-17
    • Robert Z. BachrachJeffrey D. Chinn
    • Robert Z. BachrachJeffrey D. Chinn
    • B05C500
    • H01L21/6708B05B1/20B05B7/06B05B7/0884
    • A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.
    • 化学机械喷射蚀刻方法在硅片,砷化镓衬底或类似的平坦半导体工件上快速去除大量晶片薄化中的材料,或在10-100微米范围内的蚀刻速率下产生大尺寸特征 工件厚度每分钟。 可选地包括双孔喷嘴的喷嘴或喷嘴阵列将蚀刻剂流体的高压射流输送到工件的表面。 加工蚀刻剂包括携带颗粒材料的液体或气体。 如果需要,液体可以是化学蚀刻剂或化学蚀刻剂的溶剂。 不被蚀刻的区域可以通过图案化掩模与射流屏蔽,或者喷射可以被引导到要从中除去材料的区域,如在晶片变薄或直接写入中,这取决于所需的尺寸 特征或蚀刻区域。
    • 10. 发明授权
    • Factory automation apparatus and method for handling, moving and storing
semiconductor wafer carriers
    • 用于处理,移动和存储半导体晶片载体的工厂自动化设备和方法
    • US5957648A
    • 1999-09-28
    • US764661
    • 1996-12-11
    • Robert Z. Bachrach
    • Robert Z. Bachrach
    • B65G49/07H01L21/677B65G1/12
    • H01L21/67769H01L21/67727H01L21/6773H01L21/67736Y10S414/139Y10S414/14
    • An improved apparatus and method is provided for handling, moving and storing semiconductor wafer carriers. The apparatus comprises two physically separate load ports, each coupled to a vertical transfer mechanism. Coupled between the two vertical transfer mechanisms is a horizontal transfer mechanism which extends above the footprint of the fabrication tool to which wafers are to be supplied. In a preferred embodiment the horizontal transfer mechanism comprises a bi-level conveyor comprised of a series of dual compartment segments. The dual compartment segments are coupled such that they may shift between a neutral and a positive position while maintaining a continuous movement channel between the two vertical transfer mechanisms. In this manner a wafer carrier may be placed within a first compartment of a neutrally positioned segment for movement; to store the wafer carrier the segment is shifted to the positive position. Thus a continuous movement channel comprised of the first or second compartments of a plurality of segments is maintained. The horizontal movement channel of a number of apparati may be interconnected to provide a local interconnection of fabrication tools.
    • 提供一种用于处理,移动和存储半导体晶片载体的改进的装置和方法。 该装置包括两个物理上分离的装载端口,每个装载端口连接到垂直传送机构。 在两个垂直传送机构之间耦合的是水平传送机构,其延伸到要供应晶片的制造工具的覆盖区之上。 在优选实施例中,水平传送机构包括由一系列双隔室段组成的双层输送机。 双隔室段联接,使得它们可以在中性位置和正位置之间移动,同时保持两个垂直传送机构之间的连续移动通道。 以这种方式,晶片载体可以放置在用于运动的中性定位段的第一隔室内; 为了存储晶片载体,该段移动到正位置。 因此,维持由多个段的第一或第二隔室构成的连续运动通道。 多个装置的水平运动通道可以互连以提供制造工具的局部互连。