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1. 发明授权

US07572334B2 Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application 失效
标题翻译：用于制造太阳能电池应用的大面积多晶硅片的设备
公开(公告)号：US07572334B2
公开(公告)日：2009-08-11
申请号：US11325089
申请日：2006-01-03
申请人： Arnold V. Kholodenko , Robert Z. Bachrach , Mark Mandelboym
发明人： Arnold V. Kholodenko , Robert Z. Bachrach , Mark Mandelboym
IPC分类号： C30B11/00 , B05C11/00
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/10 , Y10T117/1044 , Y10T117/1068
摘要： A method and apparatus for forming a semiconductor sheet suitable for use as a solar cell by depositing an array of solidified drops of a feed material on a sheet support. The desired properties of the sheet fabricated with the teaching of this invention are: flatness, low residual stress, minority carrier diffusion length greater than 40 microns, and minimum grain dimension at least two times the minority carrier diffusion length. In one embodiment, the deposition chamber is adapted to form and process sheets that have a surface area of about 1,000-2,400 cm2.
摘要翻译：一种用于形成适合用作太阳能电池的半导体片的方法和装置，该方法和装置通过在片材载体上沉积馈送材料的固化液滴阵列。通过本发明的教导制造的片材的期望性质是：平坦度，低残余应力，大于40微米的少数载流子扩散长度，以及最小晶粒尺寸至少是少数载流子扩散长度的两倍。在一个实施例中，沉积室适于形成和处理具有约1,000-2,400cm 2的表面积的片材。

2. 发明申请

US20070158654A1 Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application 失效
标题翻译：用于制造太阳能电池应用的大面积多晶硅片的设备
公开(公告)号：US20070158654A1
公开(公告)日：2007-07-12
申请号：US11325089
申请日：2006-01-03
申请人： Arnold V. Kholodenko , Robert Z. Bachrach , Mark Mandelboym
发明人： Arnold V. Kholodenko , Robert Z. Bachrach , Mark Mandelboym
IPC分类号： H01L29/00
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/10 , Y10T117/1044 , Y10T117/1068
摘要： A method and apparatus for forming a semiconductor sheet suitable for use as a solar cell by depositing an array of solidified drops of a feed material on a sheet support. The desired properties of the sheet fabricated with the teaching of this invention are: flatness, low residual stress, minority carrier diffusion length greater than 40 microns, and minimum grain dimension at least two times the minority carrier diffusion length. In one embodiment, the deposition chamber is adapted to form and process sheets that have a surface area of about 1,000-2,400 cm2.
摘要翻译：一种用于形成适合用作太阳能电池的半导体片的方法和装置，该方法和装置通过在片材载体上沉积馈送材料的凝固液滴阵列。通过本发明的教导制造的片材的期望性质是：平坦度，低残余应力，大于40微米的少数载流子扩散长度，以及最小晶粒尺寸至少是少数载流子扩散长度的两倍。在一个实施例中，沉积室适于形成和处理具有约1,000-2,400cm 2的表面积的片材。

3. 发明授权

US06490145B1 Substrate support pedestal 有权
标题翻译：基板支撑基座
公开(公告)号：US06490145B1
公开(公告)日：2002-12-03
申请号：US09908819
申请日：2001-07-18
申请人： Arnold V. Kholodenko , You Wang , Tony S. Kaushal , Semyon L. Kats
发明人： Arnold V. Kholodenko , You Wang , Tony S. Kaushal , Semyon L. Kats
IPC分类号： H01T2300
CPC分类号： H01L21/6833 , H01L21/6831
摘要： A ceramic substrate support and methods for fabricating the same are provided. In one embodiment, a ceramic substrate support for supporting a substrate includes a ceramic body and a porous member disposed therein. The ceramic body generally has an upper portion and a lower portion. The upper portion includes a support surface while the lower portion includes a bottom surface. At least one passage is disposed in the lower portion of the ceramic body. A first end of the passage is at least partially closed by the upper portion of the ceramic body. At least one outlet is disposed through the portion of the ceramic body through the upper portion of the ceramic body and fluidly couples the passage to the support surface.
摘要翻译：提供陶瓷基板支撑件及其制造方法。在一个实施例中，用于支撑衬底的陶瓷衬底支撑件包括陶瓷体和设置在其中的多孔构件。陶瓷体通常具有上部和下部。上部包括支撑表面，而下部包括底面。至少一个通道设置在陶瓷体的下部。通道的第一端至少部分地被陶瓷体的上部封闭。至少一个出口通过陶瓷体的上部穿过陶瓷体的部分，并将通道流体地连接到支撑表面。

4. 发明授权

US06828241B2 Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source 失效
标题翻译：通过从远程等离子体源二次原位激活蚀刻前体而进行有效的清洁
公开(公告)号：US06828241B2
公开(公告)日：2004-12-07
申请号：US10041838
申请日：2002-01-07
申请人： Arnold V. Kholodenko , Peter Porshnev
发明人： Arnold V. Kholodenko , Peter Porshnev
IPC分类号： H01L21302
CPC分类号： H01J37/32862 , B08B7/0035 , C23C14/564 , C23C16/4405 , H01J37/321
摘要： An electro-negative cleaning or etchant gas, such as fluorine, that was ionized from a stable supply gas such as NH3 in a secondary chamber and recombined in the primary chamber, is re-ionized within the primary chamber by electron attachment by ionizing an electron donor gas, such as helium, in the primary chamber.
摘要翻译：在次级室中从稳定的供应气体例如NH 3离子化并在初级室中重新组合的电负性清洁或蚀刻剂气体，例如氟，通过电子附着电离电离在主室内供体气体，如氦气，在主室中。

5. 发明授权

US06689418B2 Apparatus for wafer rinse and clean and edge etching 失效
标题翻译：晶圆清洗和边缘蚀刻装置
公开(公告)号：US06689418B2
公开(公告)日：2004-02-10
申请号：US09922130
申请日：2001-08-03
申请人： Donald J. K. Olgado , Avi Tepman , Yeuk-Fai Edwin Mok , Arnold V. Kholodenko
发明人： Donald J. K. Olgado , Avi Tepman , Yeuk-Fai Edwin Mok , Arnold V. Kholodenko
IPC分类号： B05D312
CPC分类号： H01L21/68728 , B08B3/048 , C11D7/08 , C11D7/265 , C11D11/0047 , H01L21/67057
摘要： An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed. The method includes plating the copper layer over the front side of the substrate in a plating device and then transferring the substrate from the plating device to rinsing and cleaning station. At the rinsing and cleaning station, the substrate is dropped front side down onto a pool of rinsing liquid so that the surface tension of the liquid holds the substrate in suspension thereby preventing the backside of said substrate from sinking under an upper surface of the pool and then, while the substrate is suspended in the pool, it is secured with a first set of fingers.
摘要翻译：一种用于冲洗双面基板的一侧并从基板的边缘和/或背面去除不想要的材料的装置和方法。该方法的一个实施例涉及冲洗和清洁具有正面的衬底，集成电路将在其上形成背面。该实施例包括将衬底正面朝下放置到冲洗液池上，使得衬底的前侧与溶液接触，同时衬底被溶液的表面张力保持悬浮，从而防止了衬底的背面从池的上表面下沉。接下来，当衬底在所述漂洗液体中悬浮时，衬底通过其边缘用第一组手指固定，并且在一些实施例中，衬底随后被旋转。在另一实施例中，公开了一种在衬底前侧形成铜层的方法。该方法包括在电镀装置中在基板的正面上电镀铜层，然后将基板从电镀装置转移到冲洗和清洗台。在冲洗和清洁站处，基板被正面向下落到冲洗液池上，使得液体的表面张力将基板保持在悬浮状态，从而防止所述基板的背面沉入池的上表面，并且然后，当衬底悬挂在池中时，其用第一组手指固定。

6. 发明授权

US06676760B2 Process chamber having multiple gas distributors and method 失效
标题翻译：具有多个气体分配器和方法的处理室
公开(公告)号：US06676760B2
公开(公告)日：2004-01-13
申请号：US09930938
申请日：2001-08-16
申请人： Arnold V. Kholodenko , Dan Katz , Wing L. Cheng
发明人： Arnold V. Kholodenko , Dan Katz , Wing L. Cheng
IPC分类号： C23C1600
CPC分类号： C23C16/45519 , C23C16/455
摘要： A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.
摘要翻译：基板处理室具有用于支撑基板的基板支撑件和围绕基板支撑件的排气导管。第一工艺气体分配器以第一流量引导诸如非反应性气体的第一工艺气体，例如基板周边和朝向排气管道，以在衬底周围形成非反应性气体帘幕。第二工艺气体分配器以比第一流量低的第二流量向衬底的中心部分引导第二工艺气体，例如反应性CVD或蚀刻剂气体。气体激发器激励腔室中的第一和第二处理气体。控制器操作衬底支撑件，气体流量计，气体激励器和节流阀，以处理通电气体中的衬底。

7. 发明授权

US06736668B1 High temperature electrical connector 失效
标题翻译：高温电连接器
公开(公告)号：US06736668B1
公开(公告)日：2004-05-18
申请号：US09663864
申请日：2000-09-15
申请人： Arnold V. Kholodenko , Senh Thach , Wing L. Cheng , Alvin Lau , Dennis S. Grimard
发明人： Arnold V. Kholodenko , Senh Thach , Wing L. Cheng , Alvin Lau , Dennis S. Grimard
IPC分类号： H01R1300
CPC分类号： H01R13/533 , H01R2201/24
摘要： An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.
摘要翻译：电耦合器包括具有上端和下端的内连接器，限定内连接器的绝缘外连接器元件和设置在内连接器的上端上的导热凸缘和用于传导来自电导体的热的外连接器。电导体可以用于半导体晶片处理的衬底支撑件中。衬底支撑件包括具有嵌入其中的电极的卡盘体，以及耦合到电极并从所述卡盘体突出的上部阳连接器。具有电耦合器的冷却板位于卡盘主体附近。上部阳连接器插入电耦合器中，并且耦合到电耦合器的下部的电源卡住并将晶片偏置到所述卡盘的上表面。导热凸缘传导和传递从上阳连接器和电耦合器产生的热量到冷却板。

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