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    • 2. 发明授权
    • Free radical-forming activator attached to solid and used to enhance CMP formulations
    • 自由基形成活化剂连接到固体上并用于增强CMP配方
    • US07427305B2
    • 2008-09-23
    • US11405485
    • 2006-04-18
    • Brandon Shane ScottRobert J. Small
    • Brandon Shane ScottRobert J. Small
    • C09G1/02C09G1/04
    • H01L21/3212B24B37/044C03C19/00C09G1/02C09K3/1436C09K3/1445C09K3/1463C23F3/00C23F3/04G11B5/3163G11B5/3169Y02P20/582
    • This invention relates to a method of making selected oxidizers or other free radical-producing compounds become more effective chemical etchants and/or oxidizers for CMP activities by promoting the formation of the free radicals in a CMP composition with one or more activators. The activator comprises iron, copper or combinations thereof. The activator coated abrasive is particularly effective as it brings the activator in close proximity to the targeted material on the substrate surface, and thus facilitates or accelerates the removal reaction substantially at the site of the targeted material. The activator reacts with the per-type oxidizer to form at least one oxygen-containing free radical. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced by this method.
    • 本发明涉及使用一种或多种活化剂促进在CMP组合物中形成自由基,使选择的氧化剂或其它产生自由基的化合物变成更有效的化学蚀刻剂和/或氧化剂用于CMP活性的方法。 活化剂包括铁,铜或其组合。 活化剂涂覆的磨料是特别有效的,因为其使活化剂紧邻基材表面上的目标材料,因此基本上在目标材料的位置促进或加速除去反应。 活化剂与每种类型的氧化剂反应以形成至少一种含氧自由基。 本发明进一步提供了一种在基底表面上抛光特征或层如金属膜的组合物的方法。 本发明另外提供了通过该方法制造的基板。
    • 6. 发明授权
    • Chemical mechanical polishing composition and process
    • 化学机械抛光组合物和工艺
    • US07314823B2
    • 2008-01-01
    • US11194467
    • 2005-08-02
    • Robert J. SmallLaurence McGheeDavid J. MaloneyMaria L. Peterson
    • Robert J. SmallLaurence McGheeDavid J. MaloneyMaria L. Peterson
    • H01L21/44
    • C09G1/02C09K13/00C09K13/06C23F3/00H01L21/02074H01L21/3212Y10S438/959
    • A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
    • 用于化学机械抛光的组合物包括浆料。 在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。 用于化学机械抛光的组合物通过包括有效量的羟胺化合物,过硫酸铵,作为过氧化氢的间接来源的化合物,过乙酸或高碘酸的化学机械抛光来改善。 用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。 施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。 调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。 一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除,以及用于化学机械抛光羟胺化合物,过硫酸铵,化合物为 过氧化氢的间接来源,过乙酸或高碘酸。
    • 8. 发明授权
    • Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
    • 化学机械平面化浆料的组合物接触贵金属特征的基材
    • US07524346B2
    • 2009-04-28
    • US10057206
    • 2002-01-25
    • Robert J. SmallZhefei J. Chen
    • Robert J. SmallZhefei J. Chen
    • C09G1/00C09G1/02C09G1/04
    • H01L21/3212C09G1/02C23F3/00H01L28/60
    • A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4. A method for planarizing a substrate surface having a feature thereon comprising at least one noble metal, noble metal alloy, or noble metal oxide, or a combination thereof, comprises providing a composition or slurry comprising periodic acid and an abrasive in a combined amount sufficient to planarize the substrate surface, and polishing the surface with the slurry. A substrate produced by such a method is also provided.
    • 用于化学机械平面化的组合物包括高碘酸和研磨剂,其组合量足以使其上具有特征的基材表面平坦化,其中包含贵金属,贵金属合金,贵金属氧化物或其任何组合。 在一个实施方案中,高碘酸的存在量为约0.05至约0.3摩尔/千克,磨料的存在量为约0.2至约6重量%。 在另一个实施方案中,组合物还包含pH调节剂,其量足以使组合物的pH在约pH 5至约pH 10或约pH 1至约pH 4的范围内 包括至少一种贵金属,贵金属合金或贵金属氧化物或其组合的其上具有其特征的基材表面的平面化方法包括提供组合物或浆料,所述组合物或浆料包含合成量足够的高碘酸和磨料 平坦化基板表面,并用浆料抛光表面。 还提供了通过这种方法制造的基板。