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    • 6. 发明申请
    • SCALABLE DISTRIBUTED MEMORY AND I/O MULTIPROCESSOR SYSTEM
    • 可分配的分布式存储器和I / O多处理器系统
    • US20120317328A1
    • 2012-12-13
    • US13590936
    • 2012-08-21
    • Linda J. RankinPaul R. PierceGregory E. DermerWen-Hann WangKai ChengRichard H. HofsheierNitin Y. Borkar
    • Linda J. RankinPaul R. PierceGregory E. DermerWen-Hann WangKai ChengRichard H. HofsheierNitin Y. Borkar
    • G06F13/28G06F13/00
    • G06F13/4022G06F13/4027
    • A multiprocessor system comprises at least one processing module, at least one I/O module, and an interconnect network to connect the at least one processing module with the at least one input/output module. In an example embodiment, the interconnect network comprises at least two bridges to send and receive transactions between the input/output modules and the processing module. The interconnect network further comprises at least two crossbar switches to route the transactions over a high bandwidth switch connection. Using embodiments of the interconnect network allows high bandwidth communication between processing modules and I/O modules. Standard processing module hardware can be used with the interconnect network without modifying the BIOS or the operating system. Furthermore, using the interconnect network of embodiments of the present invention is non-invasive to the processor motherboard. The processor memory bus, clock, and reset logic all remain intact.
    • 多处理器系统包括至少一个处理模块,至少一个I / O模块和互连网络,以将所述至少一个处理模块与所述至少一个输入/输出模块连接。 在示例实施例中,互连网络包括用于在输入/输出模块和处理模块之间发送和接收事务的至少两个桥。 互连网络还包括至少两个交叉开关以通过高带宽交换机连接路由交易。 使用互连网络的实施例允许处理模块和I / O模块之间的高带宽通信。 标准处理模块硬件可以与互连网络一起使用,而无需修改BIOS或操作系统。 此外,使用本发明的实施例的互连网络对于处理器主板是非侵入性的。 处理器内存总线,时钟和复位逻辑都保持不变。
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
    • 半导体器件及其制造方法
    • US20110101370A1
    • 2011-05-05
    • US12916346
    • 2010-10-29
    • Kai ChengStefan Degroote
    • Kai ChengStefan Degroote
    • H01L29/66H01L21/20
    • H01L21/02389H01L21/02422H01L21/0245H01L21/02458H01L21/0254H01L21/02639H01L29/0649H01L29/2003H01L29/66477H01L29/7786
    • A semiconductor device and method of manufacturing the device is disclosed. In one aspect, the device includes a semiconductor substrate and a GaN-type layer stack on top of the semiconductor substrate. The GaN-type layer stack has at least one buffer layer, a first active layer and a second active layer. Active device regions are definable at an interface of the first and second active layer. The semiconductor substrate is present on an insulating layer and is patterned to define trenches according to a predefined pattern, which includes at least one trench underlying the active device region. The trenches extend from the insulating layer into at least one buffer layer of the GaN-type layer stack and are overgrown within the at least one buffer layer, so as to obtain that the first and the second active layer are continuous at least within the active device regions.
    • 公开了一种半导体器件及其制造方法。 一方面,该器件在半导体衬底的顶部上包​​括半导体衬底和GaN型层叠层。 GaN型层堆叠具有至少一个缓冲层,第一有源层和第二有源层。 有源器件区可以在第一和第二有源层的界面处被定义。 半导体衬底存在于绝缘层上,并被图案化以根据预定图案限定沟槽,其包括位于有源器件区域下方的至少一个沟槽。 沟槽从绝缘层延伸到GaN型层堆叠的至少一个缓冲层中,并且在至少一个缓冲层内长满,从而获得第一和第二活性层至少在活性物质内连续 设备区域。