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1. 发明授权

US06512296B1 Semiconductor structure having heterogenous silicide regions having titanium and molybdenum 失效
标题翻译：具有异质硅化物区域的具有钛和钼的半导体结构
公开(公告)号：US06512296B1
公开(公告)日：2003-01-28
申请号：US09636325
申请日：2000-08-10
申请人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
发明人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
IPC分类号： H01L2348
CPC分类号： H01L29/4933 , H01L21/28052 , H01L21/28518 , H01L21/28568 , H01L21/823418 , H01L21/823443 , H01L29/456
摘要： A process for forming heterogeneous silicide structures on a semiconductor substrate (10) includes implanting molybdenum ions into selective areas of the semiconductor substrate (10) to form molybdenum regions (73, 74, 75, 76). Titanium is then deposited over the semiconductor substrate (10). The semiconductor substrate (10) is annealed at a temperature between approximately 600° C. and approximately 700° C. During the annealing process, the titanium deposited in areas outside the molybdenum regions (73, 74, 75, 76) interacts with silicon on the substrate to form titanium silicide in a high resistivity C49 crystal phase. The titanium deposited in areas within the molybdenum regions (73, 74, 75, 76) interacts with silicon to form titanium silicide in a low resistivity C54 crystal phase because the presence of molybdenum ions in silicon lowers the energy barrier for crystal phase transformation between the C49 phase and the C54 phase.
摘要翻译：在半导体衬底（10）上形成异质硅化物结构的方法包括将钼离子注入到半导体衬底（10）的选择区域中以形成钼区（73,74,75,76）。然后将钛沉积在半导体衬底（10）上。半导体衬底（10）在大约600℃和大约700℃之间的温度下退火。在退火过程中，沉积在钼区域（73,74,75,76）之外的区域中的钛与硅该基板在高电阻率C49晶相中形成硅化钛。在钼区域（73,74,75,76）中的区域中沉积的钛与硅相互作用以在低电阻率C54晶体相中形成硅化钛，因为硅中的钼离子的存在降低了能量势垒以进行晶体相变 C49相和C54相。

2. 发明授权

US06441410B2 MOSFET with lateral resistor ballasting 失效
标题翻译：具有横向电阻器的MOSFET镇流器
公开(公告)号：US06441410B2
公开(公告)日：2002-08-27
申请号：US09809014
申请日：2001-03-16
申请人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
发明人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
IPC分类号： H01L2980
CPC分类号： H01L28/24 , H01L21/28518 , H01L27/0738 , H01L29/41725 , H01L29/435 , H01L29/665
摘要： The current density profile in the conduction channel of a field effect transistor is controlled and thermal gradients are limited under extreme operating conditions by providing lateral resistive ballasting at the source/drain regions adjacent the conduction channel. A distributed resistance is formed by inhibiting conversion of a region of deposited salicide from a high resistance phase state to a low resistance phase state through formation of the deposit with a width or area less than a critical dimension.
摘要翻译：控制场效应晶体管的导通通道中的电流密度分布，并通过在邻近导通通道的源极/漏极区域提供横向电阻镇流，在极端工作条件下限制热梯度。通过形成具有小于临界尺寸的宽度或面积的沉积物，通过抑制沉积的自对准硅化物的区域从高电阻相位状态转变为低电阻相位状态来形成分布电阻。

3. 发明授权

US06268286B1 Method of fabricating MOSFET with lateral resistor with ballasting 失效
标题翻译：制造具有压载式横向电阻器的MOSFET的方法
公开(公告)号：US06268286B1
公开(公告)日：2001-07-31
申请号：US09495499
申请日：2000-02-01
申请人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
发明人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
IPC分类号： H01L2144
CPC分类号： H01L28/24 , H01L21/28518 , H01L27/0738 , H01L29/41725 , H01L29/435 , H01L29/665
摘要： The current density profile in the conduction channel of a field effect transistor is controlled and thermal gradients are limited under extreme operating conditions by providing lateral resistive ballasting at the source/drain regions adjacent the conduction channel. A distributed resistance is formed by inhibiting conversion of a region of deposited salicide from a high resistance phase state to a low resistance phase state through formation of the deposit with a width or area less than a critical dimension.
摘要翻译：控制场效应晶体管的导通通道中的电流密度分布，并通过在邻近导通通道的源极/漏极区域提供横向电阻镇流，在极端工作条件下限制热梯度。通过形成具有小于临界尺寸的宽度或面积的沉积物，通过抑制沉积的自对准硅化物的区域从高电阻相位状态转变为低电阻相位状态来形成分布电阻。

4. 发明授权

US06187617B1 Semiconductor structure having heterogeneous silicide regions and method for forming same 失效
标题翻译：具有异质硅化物区域的半导体结构及其形成方法
公开(公告)号：US06187617B1
公开(公告)日：2001-02-13
申请号：US09363558
申请日：1999-07-29
申请人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
发明人： Robert J. Gauthier, Jr. , Randy W. Mann , Steven H. Voldman
IPC分类号： H01L21336
CPC分类号： H01L29/4933 , H01L21/28052 , H01L21/28518 , H01L21/28568 , H01L21/823418 , H01L21/823443 , H01L29/456
摘要： A process for forming heterogeneous silicide structures on a semiconductor substrate (10) includes implanting molybdenum ions into selective areas of the semiconductor substrate (10) to form molybdenum regions (73, 74, 75, 76). Titanium is then deposited over the semiconductor substrate (10). The semiconductor substrate (10) is annealed at a temperature between approximately 600° C. and approximately 700° C. During the annealing process, the titanium deposited in areas outside the molybdenum regions (73, 74, 75, 76) interacts with silicon on the substrate to form titanium silicide in a high resistivity C49 crystal phase. The titanium deposited in areas within the molybdenum regions (73, 74, 75, 76) interacts with silicon to form titanium silicide in a low resistivity C54 crystal phase because the presence of molybdenum ions in silicon lowers the energy barrier for crystal phase transformation between the C49 phase and the C54 phase.
摘要翻译：在半导体衬底（10）上形成异质硅化物结构的方法包括将钼离子注入到半导体衬底（10）的选择区域中以形成钼区（73,74,75,76）。然后将钛沉积在半导体衬底（10）上。半导体衬底（10）在大约600℃和大约700℃之间的温度下退火。在退火过程中，沉积在钼区域（73,74,75,76）之外的区域中的钛与硅该基板在高电阻率C49晶相中形成硅化钛。在钼区域（73,74,75,76）中的区域中沉积的钛与硅相互作用以在低电阻率C54晶体相中形成硅化钛，因为硅中的钼离子的存在降低了能量势垒以进行晶体相变 C49相和C54相。

5. 发明授权

US06646305B2 Grounded body SOI SRAM cell 有权
标题翻译：接地体SOI SRAM单元
公开(公告)号：US06646305B2
公开(公告)日：2003-11-11
申请号：US09915061
申请日：2001-07-25
申请人： Fariborz Assaderaghi , Andres Bryant , Peter E. Cottrell , Robert J. Gauthier, Jr. , Randy W. Mann , Edward J. Nowak , Jed H. Rankin
发明人： Fariborz Assaderaghi , Andres Bryant , Peter E. Cottrell , Robert J. Gauthier, Jr. , Randy W. Mann , Edward J. Nowak , Jed H. Rankin
IPC分类号： H01L2701
CPC分类号： H01L27/1203 , H01L27/1104
摘要： A semiconductor memory device comprising: an SOI substrate having a thin silicon layer on top of a buried insulator; and an SRAM comprising four NFETs and two PFETs located in the thin silicon layer, each the NFET and PFET having a body region between a source region and a drain region, wherein the bodies of two of the NFETs are electrically connected to ground. Additionally, the bodies of the two PFETs are electrically connected to VDD.
摘要翻译：一种半导体存储器件，包括：在衬底绝缘体的顶部上具有薄硅层的SOI衬底; 以及包括四个NFET和位于薄硅层中的两个PFET的SRAM，每个NFET和PFET具有在源极区域和漏极区域之间的主体区域，其中两个NFET的主体电连接到地。另外，两个PFET的主体电连接到VDD。

6. 发明授权

US07075153B2 Grounded body SOI SRAM cell 有权
标题翻译：接地体SOI SRAM单元
公开(公告)号：US07075153B2
公开(公告)日：2006-07-11
申请号：US10640807
申请日：2003-08-14
申请人： Fariborz Assaderaghi , Andres Bryant , Peter E. Cottrell , Robert J. Gauthier, Jr. , Randy W. Mann , Edward J. Nowak , Jed H. Rankin
发明人： Fariborz Assaderaghi , Andres Bryant , Peter E. Cottrell , Robert J. Gauthier, Jr. , Randy W. Mann , Edward J. Nowak , Jed H. Rankin
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L27/1203 , H01L27/1104
摘要： A semiconductor memory device comprising: an SOI substrate having a thin silicon layer on top of a buried insulator; and an SRAM comprising four NFETs and two PFETs located in the thin silicon layer, each the NFET and PFET having a body region between a source region and a drain region, wherein the bodies of two of the NFETs are electrically connected to ground. Additionally, the bodies of the two PFETs are electrically connected to VDD.
摘要翻译：一种半导体存储器件，包括：在衬底绝缘体的顶部上具有薄硅层的SOI衬底; 以及包括四个NFET和位于薄硅层中的两个PFET的SRAM，每个NFET和PFET具有在源极区域和漏极区域之间的主体区域，其中两个NFET的主体电连接到地。另外，两个PFET的主体电连接到V DD。

7. 发明授权

US07166904B2 Structure and method for local resistor element in integrated circuit technology 有权
标题翻译：集成电路技术中局部电阻元件的结构与方法
公开(公告)号：US07166904B2
公开(公告)日：2007-01-23
申请号：US10708023
申请日：2004-02-03
申请人： Jason P. Gill , Terence B. Hook , Randy W. Mann , William J. Murphy , William R. Tonti , Steven H. Voldman
发明人： Jason P. Gill , Terence B. Hook , Randy W. Mann , William J. Murphy , William R. Tonti , Steven H. Voldman
IPC分类号： H01L29/00
CPC分类号： H01L27/11 , H01L27/0288 , H01L27/0802 , H01L27/1112 , H01L27/1203 , H01L29/7304 , H01L29/7378 , H01L29/7391 , H01L29/78 , Y10S257/903 , Y10S257/904
摘要： A method and system for forming a semiconductor device having superior ESD protection characteristics. A resistive material layer is disposed within a contact hole on at least one of the contact stud upper and lower surface. In preferred embodiments, the integral resistor has a resistance value of between about one Ohm and about ten Ohms, or between 10 and 100 Ohms. Embodiments of the resistive layer include sputtered silicon material, a tunnel oxide, a tunnel nitride, a silicon-implanted oxide, a silicon-implanted nitride, or an amorphous polysilicon. Embodiments of the invention include SRAMs, bipolar transistors, SOI lateral diodes, MOSFETs and SiGe Transistors.
摘要翻译：一种用于形成具有优异的ESD保护特性的半导体器件的方法和系统。电阻材料层设置在触头螺柱上下表面中的至少一个上的接触孔内。在优选实施例中，积分电阻器的电阻值介于约1欧姆至约10欧姆之间，或10欧姆至100欧姆之间。电阻层的实施例包括溅射硅材料，隧道氧化物，隧道氮化物，硅注入氧化物，注入硅的氮化物或非晶多晶硅。本发明的实施例包括SRAM，双极晶体管，SOI横向二极管，MOSFET和SiGe晶体管。

8. 发明授权

US08569116B2 Integrated circuit with a fin-based fuse, and related fabrication method 有权
标题翻译：具有鳍式保险丝的集成电路及相关制造方法
公开(公告)号：US08569116B2
公开(公告)日：2013-10-29
申请号：US13171228
申请日：2011-06-28
申请人： Randy W. Mann , Kingsuk Maitra , Anurag Mittal
发明人： Randy W. Mann , Kingsuk Maitra , Anurag Mittal
IPC分类号： H01L21/82 , H01L21/479 , H01L21/44
CPC分类号： H01L23/62 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： Methods of fabricating an integrated circuit with a fin-based fuse, and the resulting integrated circuit with a fin-based fuse are provided. In the method, a fin is created from a layer of semiconductor material and has a first end and a second end. The method provides for forming a conductive path on the fin from its first end to its second end. The conductive path is electrically connected to a programming device that is capable of selectively directing a programming current through the conductive path to cause a structural change in the conductive path to increase resistance across the conductive path.
摘要翻译：提供了制造具有鳍式保险丝的集成电路的方法，以及所得到的具有鳍式保险丝的集成电路。在该方法中，由半导体材料层产生翅片并具有第一端和第二端。该方法提供了在翅片上从其第一端到其第二端形成导电路径。导电路径电连接到编程设备，该编程设备能够选择性地将编程电流引导通过导电路径，从而导致导电路径中的结构变化，以增加穿过导电路径的电阻。

9. 发明授权

US07696034B2 Methods of base formation in a BiCOMS process 失效
标题翻译： BiCOMS工艺中碱形成的方法
公开(公告)号：US07696034B2
公开(公告)日：2010-04-13
申请号：US12128077
申请日：2008-05-28
申请人： Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , Beth Ann Rainey , Jae-Sung Rieh , Andreas D. Stricker
发明人： Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , Beth Ann Rainey , Jae-Sung Rieh , Andreas D. Stricker
IPC分类号： H01L21/8238
CPC分类号： H01L29/66242 , H01L21/28518 , H01L21/8249 , H01L27/0623 , H01L29/0804 , H01L29/456 , H01L29/7371
摘要： Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
摘要翻译：提供了制造具有凸起非本征基极的异质结双极晶体管的方法，其中通过在以自对准方式延伸到发射极区域的凸起的外部基极之上形成硅化物来降低基极电阻。在形成凸起的外基之后，将硅化物形成结合到BiCMOS工艺流程中。本发明还提供了一种异质结双极晶体管，其具有凸起的外部基极和位于凸起外部基极顶部的硅化物。凸起的外基极上面的硅化物以自对准的方式延伸到发射极。发射极通过间隔物与硅化物分离。

10. 发明授权

US06967351B2 Finfet SRAM cell using low mobility plane for cell stability and method for forming 有权
标题翻译： Finfet SRAM单元使用低迁移率平面进行电池稳定性和形成方法
公开(公告)号：US06967351B2
公开(公告)日：2005-11-22
申请号：US10011351
申请日：2001-12-04
申请人： David M. Fried , Randy W. Mann , K. Paul Muller , Edward J. Nowak
发明人： David M. Fried , Randy W. Mann , K. Paul Muller , Edward J. Nowak
IPC分类号： H01L21/8244 , H01L21/84 , H01L27/12 , H01L29/04
CPC分类号： H01L27/11 , H01L21/84 , H01L27/1203 , H01L29/785 , Y10S257/903
摘要： The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relatively high gain FinFET transistors in a high carrier mobility plane. Thus formed, the FinFETs formed in the high mobility plane have a relatively higher gain than the FinFETs formed in the low mobility plane. The embodiments are of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell. In this application, the bodies of the n-type FinFETs used as transfer devices are formed along the {110} plane. The bodies of the n-type FinFETs and p-type FinFETs used as the storage latch are formed along the {100}. Thus formed, the transfer devices will have a gain approximately half that of the n-type storage latch devices, facilitating proper SRAM operation.
摘要翻译：本发明提供了一种用于形成它的器件设计和方法，其导致Fin场效应晶体管具有不同的增益而不会不利地影响器件密度。本发明在低载流子迁移率平面中形成相对较低的增益FinFET晶体管，并在高载流子迁移率平面内形成相对较高的增益FinFET晶体管。如此形成的，在高迁移率平面中形成的FinFET具有比在低迁移率平面中形成的FinFET更高的增益。这些实施例特别适用于静态随机存取存储器（SRAM）单元的设计和制造。在这种应用中，用作转移装置的n型FinFET的主体沿{110}平面形成。用作存储锁存器的n型FinFET和p型FinFET的主体沿{100}形成。如此形成的，传送装置的增益大约是n型存储锁存装置的增益的一半，有利于适当的SRAM操作。

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