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1. 发明授权

US06602763B2 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth 有权
标题翻译：通过横向过度生长制造氮化镓半导体层的方法
公开(公告)号：US06602763B2
公开(公告)日：2003-08-05
申请号：US09780069
申请日：2001-02-09
申请人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
发明人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
IPC分类号： H01L2120
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并且通过开口阵列将掩模下方的氮化镓层生长到掩模上，从而形成杂色的氮化镓半导体层。尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。杂色生长的氮化镓半导体层可能被长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。可以使用金属有机气相外延生长氮化镓半导体层。微电子器件可以形成在杂草生长的氮化镓半导体层中。

2. 发明授权

US06570192B1 Gallium nitride semiconductor structures including lateral gallium nitride layers 有权
标题翻译：包括横向氮化镓层的氮化镓半导体结构
公开(公告)号：US06570192B1
公开(公告)日：2003-05-27
申请号：US09525721
申请日：2000-03-14
申请人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
发明人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
IPC分类号： H01L3300
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层并通过开口阵列生长下面的氮化镓层并在掩模上生长氮化镓半导体层，从而形成杂色的氮化镓半导体层。尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。杂色生长的氮化镓半导体层可能被长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。可以使用金属有机气相外延生长氮化镓半导体层。微电子器件可以形成在杂草生长的氮化镓半导体层中。

3. 发明授权

US6051849A Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer 失效
标题翻译：包括从下面的氮化镓层延伸的侧面氮化镓层的氮化镓半导体结构
公开(公告)号：US6051849A
公开(公告)日：2000-04-18
申请号：US32190
申请日：1998-02-27
申请人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
发明人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
IPC分类号： H01L21/20 , H01L33/00 , H01V33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并且通过开口阵列将掩模下方的氮化镓层生长到掩模上，从而形成杂色的氮化镓半导体层。尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。杂色生长的氮化镓半导体层可能长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。可以使用金属有机气相外延生长氮化镓半导体层。微电子器件可以形成在杂草生长的氮化镓半导体层中。

4. 发明授权

US06897483B2 Second gallium nitride layers that extend into trenches in first gallium nitride layers 有权
标题翻译：第二氮化镓层延伸到第一氮化镓层中的沟槽中
公开(公告)号：US06897483B2
公开(公告)日：2005-05-24
申请号：US10426553
申请日：2003-04-30
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01S5/02 , H01L31/0312 , H01L21/15
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

5. 发明授权

US07195993B2 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches 有权
标题翻译：通过横向生长形成沟槽来制造氮化镓半导体层的方法
公开(公告)号：US07195993B2
公开(公告)日：2007-03-27
申请号：US10915665
申请日：2004-08-10
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L21/36
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

6. 发明授权

US06265289B1 Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby 有权
标题翻译：通过从侧壁横向生长成沟槽来制造氮化镓半导体层的方法，以及由此制造的氮化镓半导体结构
公开(公告)号：US06265289B1
公开(公告)日：2001-07-24
申请号：US09327136
申请日：1999-06-07
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L2136
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A sidewall of an underlying gallium nitride layer is laterally grown into a trench in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer. In one embodiment, the lateral gallium nitride layer is masked with a mask that includes an array of openings therein. The lateral gallium nitride layer is then grown through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. In another embodiment, the lateral gallium nitride layer is grown vertically. A plurality of second sidewalls are formed in the vertically grown gallium nitride layer to define a plurality of second trenches. The plurality of second sidewalls of the vertically grown gallium nitride layer are then laterally grown into the plurality of second trenches, to thereby form a second lateral gallium nitride layer. Microelectronic devices are then formed in the gallium nitride semiconductor layer.
摘要翻译：下面的氮化镓层的侧壁横向生长在下面的氮化镓层中的沟槽中，从而形成横向氮化镓半导体层。然后可以在横向氮化镓层中形成微电子器件。位错缺陷不会从侧壁横向渗透到下面的氮化镓层中的沟槽中，使得侧向氮化镓半导体层相对无缺陷。此外，可以在横向氮化镓层的生长期间不需要掩盖下面的氮化镓层的部分来实现侧壁生长。通过从侧向氮化镓层生长第二氮化镓半导体层，可以进一步降低横向氮化镓半导体层的缺陷密度。在一个实施例中，横向氮化镓层用包括其中的开口阵列的掩模掩蔽。然后横向氮化镓层通过开口阵列生长到掩模上，从而形成过度生长的氮化镓半导体层。在另一个实施例中，横向氮化镓层垂直生长。在垂直生长的氮化镓层中形成多个第二侧壁以限定多个第二沟槽。然后将垂直生长的氮化镓层的多个第二侧壁横向生长成多个第二沟槽，从而形成第二横向氮化镓层。然后在氮化镓半导体层中形成微电子器件。

7. 发明授权

US06608327B1 Gallium nitride semiconductor structure including laterally offset patterned layers 失效
标题翻译：包括横向偏移的图案化层的氮化镓半导体结构
公开(公告)号：US06608327B1
公开(公告)日：2003-08-19
申请号：US09031843
申请日：1998-02-27
申请人： Robert F. Davis , Ok-Hyun Nam
发明人： Robert F. Davis , Ok-Hyun Nam
IPC分类号： H01L310256
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a first mask that includes a first array of openings therein and growing the underlying gallium nitride layer through the first array of openings and onto the first mask, to thereby form a first overgrown gallium nitride semiconductor layer. The first overgrown layer is then masked with the second mask that includes a second array of openings therein. The second array of openings is laterally offset from the first array of openings. The first overgrown gallium nitride layer is then grown through the second array of openings and onto the second mask, to thereby form a second overgrown gallium nitride semiconductor layer. Microelectronic devices may then be formed in the second overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括第一阵列开口的第一掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并通过第一开口阵列生长下面的氮化镓层，并且形成第一掩模杂草生长的氮化镓半导体层。然后用包括其中的第二开口阵列的第二掩模掩蔽第一长满的层。第二阵列的开口横向偏离第一阵列的开口。然后通过第二阵列的开口将第一长满的氮化镓层生长到第二掩模上，从而形成第二长满的氮化镓半导体层。然后可以在第二长满的氮化镓半导体层中形成微电子器件。

8. 发明申请

US20110272004A1 Solar panels with opaque EVA film backseets 审中-公开
标题翻译：太阳能电池板采用不透明EVA膜背衬
公开(公告)号：US20110272004A1
公开(公告)日：2011-11-10
申请号：US12800004
申请日：2010-05-06
申请人： Robert F. Davis , E. David Santoleri
发明人： Robert F. Davis , E. David Santoleri
IPC分类号： H01L31/048
CPC分类号： B32B17/10788 , B32B17/10018 , B32B2327/12 , B32B2367/00 , H01L31/049 , Y02E10/50
摘要： Laminates of ethylene-vinyl acetate copolymer resin with opacifying pigment provide excellent performance as backing sheets for photovoltaic cells.
摘要翻译：具有不透明颜料的乙烯 - 乙酸乙烯酯共聚物树脂的层压材料作为光伏电池的背衬片提供优异的性能。

9. 发明申请

US20110120522A1 BRIGHT WHITE PROTECTIVE LAMINATES 审中-公开
标题翻译：明亮的白色保护层压板
公开(公告)号：US20110120522A1
公开(公告)日：2011-05-26
申请号：US13017504
申请日：2011-01-31
申请人： Carl P. Kernander , Robert F. Davis , Frank A. Mannarino , Marina Temchenko
发明人： Carl P. Kernander , Robert F. Davis , Frank A. Mannarino , Marina Temchenko
IPC分类号： H01L31/042 , B32B27/36 , B32B27/08 , B32B27/06
CPC分类号： B32B27/08 , B32B7/12 , B32B15/08 , B32B17/10623 , B32B17/10788 , B32B27/06 , B32B27/20 , B32B27/30 , B32B27/304 , B32B27/306 , B32B2307/712 , B32B2457/00 , H01L31/049 , H02S40/22 , Y02E10/52 , Y10T428/26 , Y10T428/269 , Y10T428/3154 , Y10T428/31544 , Y10T428/31678 , Y10T428/31681 , Y10T428/31699 , Y10T428/31786 , Y10T428/31797 , Y10T428/31935
摘要： Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.
摘要翻译：具有耐候性薄膜的第一外层，至少一个中间层和含有不透明量的白色颜料的第二外层的层压体。层压板特别适用于保护光伏电池，太阳能电池板和电路板。在光伏电池中，层压板导致发电量增加。

10. 发明授权

US07723154B1 Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities 失效
标题翻译：形成具有浅受主电导率的氧化锌基II-VI化合物半导体层的方法
公开(公告)号：US07723154B1
公开(公告)日：2010-05-25
申请号：US11551058
申请日：2006-10-19
申请人： Bunmi T. Adekore , Jonathan M. Pierce , Robert F. Davis , George B. Kenney
发明人： Bunmi T. Adekore , Jonathan M. Pierce , Robert F. Davis , George B. Kenney
IPC分类号： H01L21/00
CPC分类号： H01L21/02565 , H01L21/0237 , H01L21/02554 , H01L21/02573 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/425
摘要： A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.
摘要翻译： p型ZnO基II-VI化合物半导体层在其中具有大于约1×1017cm-3的净p型掺杂剂浓度的银，钾和/或金掺杂剂。形成层的方法包括使用原子层沉积（ALD）技术。这种技术包括将基底暴露于气体组合中：在处理时间间隔内以至少两个浓度水平重复过渡浓度的锌的第一反应气体，含有氧的第二反应气体和p型掺杂气体含有选自银，钾和金的至少一种p型掺杂剂物质。第二反应气体中的氧浓度也可以在至少两个浓度水平之间重复地转变。第一反应气体中的锌的浓度和第二反应气体中的氧浓度可以以交替的顺序转变，使得第一反应气体中相对较高的锌浓度与第二反应气体中相对较低的氧浓度重叠，反之亦然。

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