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1. 发明授权

US06602763B2 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth 有权
标题翻译：通过横向过度生长制造氮化镓半导体层的方法
公开(公告)号：US06602763B2
公开(公告)日：2003-08-05
申请号：US09780069
申请日：2001-02-09
申请人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
发明人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
IPC分类号： H01L2120
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并且通过开口阵列将掩模下方的氮化镓层生长到掩模上，从而形成杂色的氮化镓半导体层。尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。杂色生长的氮化镓半导体层可能被长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。可以使用金属有机气相外延生长氮化镓半导体层。微电子器件可以形成在杂草生长的氮化镓半导体层中。

2. 发明授权

US06570192B1 Gallium nitride semiconductor structures including lateral gallium nitride layers 有权
标题翻译：包括横向氮化镓层的氮化镓半导体结构
公开(公告)号：US06570192B1
公开(公告)日：2003-05-27
申请号：US09525721
申请日：2000-03-14
申请人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
发明人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
IPC分类号： H01L3300
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层并通过开口阵列生长下面的氮化镓层并在掩模上生长氮化镓半导体层，从而形成杂色的氮化镓半导体层。尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。杂色生长的氮化镓半导体层可能被长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。可以使用金属有机气相外延生长氮化镓半导体层。微电子器件可以形成在杂草生长的氮化镓半导体层中。

3. 发明授权

US6051849A Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer 失效
标题翻译：包括从下面的氮化镓层延伸的侧面氮化镓层的氮化镓半导体结构
公开(公告)号：US6051849A
公开(公告)日：2000-04-18
申请号：US32190
申请日：1998-02-27
申请人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
发明人： Robert F. Davis , Ok-Hyun Nam , Tsvetanka Zheleva , Michael D. Bremser
IPC分类号： H01L21/20 , H01L33/00 , H01V33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. Although dislocation defects may propagate vertically from the underlying gallium nitride layer to the grown gallium nitride layer through the mask openings, the overgrown gallium nitride layer is relatively defect free. The overgrown gallium nitride semiconductor layer may be overgrown until the overgrown gallium nitride layer coalesces on the mask, to form a continuous overgrown monocrystalline gallium nitride semiconductor layer. The gallium nitride semiconductor layer may be grown using metalorganic vapor phase epitaxy. Microelectronic devices may be formed in the overgrown gallium nitride semiconductor layer.
摘要翻译：通过用包括其中的开口阵列的掩模掩蔽下面的氮化镓层来制造氮化镓半导体层，并且通过开口阵列将掩模下方的氮化镓层生长到掩模上，从而形成杂色的氮化镓半导体层。尽管位错缺陷可能通过掩模开口从下面的氮化镓层垂直传播到生长的氮化镓层，但是过度生长的氮化镓层相对无缺陷。杂色生长的氮化镓半导体层可能长满，直到杂色的氮化镓层在掩模上聚结，形成连续的长满的单晶氮化镓半导体层。可以使用金属有机气相外延生长氮化镓半导体层。微电子器件可以形成在杂草生长的氮化镓半导体层中。

4. 发明授权

US07195993B2 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches 有权
标题翻译：通过横向生长形成沟槽来制造氮化镓半导体层的方法
公开(公告)号：US07195993B2
公开(公告)日：2007-03-27
申请号：US10915665
申请日：2004-08-10
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L21/36
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

5. 发明授权

US06265289B1 Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby 有权
标题翻译：通过从侧壁横向生长成沟槽来制造氮化镓半导体层的方法，以及由此制造的氮化镓半导体结构
公开(公告)号：US06265289B1
公开(公告)日：2001-07-24
申请号：US09327136
申请日：1999-06-07
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L2136
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A sidewall of an underlying gallium nitride layer is laterally grown into a trench in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer. In one embodiment, the lateral gallium nitride layer is masked with a mask that includes an array of openings therein. The lateral gallium nitride layer is then grown through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. In another embodiment, the lateral gallium nitride layer is grown vertically. A plurality of second sidewalls are formed in the vertically grown gallium nitride layer to define a plurality of second trenches. The plurality of second sidewalls of the vertically grown gallium nitride layer are then laterally grown into the plurality of second trenches, to thereby form a second lateral gallium nitride layer. Microelectronic devices are then formed in the gallium nitride semiconductor layer.
摘要翻译：下面的氮化镓层的侧壁横向生长在下面的氮化镓层中的沟槽中，从而形成横向氮化镓半导体层。然后可以在横向氮化镓层中形成微电子器件。位错缺陷不会从侧壁横向渗透到下面的氮化镓层中的沟槽中，使得侧向氮化镓半导体层相对无缺陷。此外，可以在横向氮化镓层的生长期间不需要掩盖下面的氮化镓层的部分来实现侧壁生长。通过从侧向氮化镓层生长第二氮化镓半导体层，可以进一步降低横向氮化镓半导体层的缺陷密度。在一个实施例中，横向氮化镓层用包括其中的开口阵列的掩模掩蔽。然后横向氮化镓层通过开口阵列生长到掩模上，从而形成过度生长的氮化镓半导体层。在另一个实施例中，横向氮化镓层垂直生长。在垂直生长的氮化镓层中形成多个第二侧壁以限定多个第二沟槽。然后将垂直生长的氮化镓层的多个第二侧壁横向生长成多个第二沟槽，从而形成第二横向氮化镓层。然后在氮化镓半导体层中形成微电子器件。

6. 发明授权

US06897483B2 Second gallium nitride layers that extend into trenches in first gallium nitride layers 有权
标题翻译：第二氮化镓层延伸到第一氮化镓层中的沟槽中
公开(公告)号：US06897483B2
公开(公告)日：2005-05-24
申请号：US10426553
申请日：2003-04-30
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01S5/02 , H01L31/0312 , H01L21/15
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

7. 发明申请

US20050009304A1 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches 有权
标题翻译：通过横向生长形成沟槽来制造氮化镓半导体层的方法
公开(公告)号：US20050009304A1
公开(公告)日：2005-01-13
申请号：US10915665
申请日：2004-08-10
申请人： Tsvetanka Zheleva , Darren Thomson , Scott Smith , Kevin Linthicum , Thomas Gehrke , Robert Davis
发明人： Tsvetanka Zheleva , Darren Thomson , Scott Smith , Kevin Linthicum , Thomas Gehrke , Robert Davis
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01S5/02 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

8. 发明授权

US08637901B2 Low-defect density gallium nitride semiconductor structures and devices thereof 有权
标题翻译：低缺陷密度氮化镓半导体结构及其器件
公开(公告)号：US08637901B2
公开(公告)日：2014-01-28
申请号：US13568362
申请日：2012-08-07
申请人： Tsvetanka Zheleva , Shah Pankaj , Michael Derenge
发明人： Tsvetanka Zheleva , Shah Pankaj , Michael Derenge
IPC分类号： H01L31/102
CPC分类号： H01L29/778 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L29/2003 , H01L29/66212 , H01L29/66431 , H01L29/66462
摘要： A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer.
摘要翻译：一种低缺陷氮化镓结构，包括：第一氮化镓层，其包含蚀刻到所述第一氮化镓层中的多个氮化镓柱和第一位错密度; 以及第二氮化镓层，其在所述氮化镓柱上延伸并且包括第二位错密度，其中所述第二位错密度可以低于所述第一位错密度。另外，一种制造氮化镓半导体层的方法，其包括用掩模掩蔽下面的氮化镓层，所述掩模包括列阵列，并通过所述列生长下面的氮化镓层，并使用金属有机化学气相沉积从而形成在所述掩模上聚结的双向外延氮化镓层以形成连续的外延单晶氮化镓半导体层。

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