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    • 1. 发明授权
    • CMOS voltage divider
    • CMOS分压器
    • US06429731B2
    • 2002-08-06
    • US09816934
    • 2001-03-23
    • Thomas BöhmRobert EsterlStefan LammersZoltan Manyoki
    • Thomas BöhmRobert EsterlStefan LammersZoltan Manyoki
    • G05F1595
    • G05F3/242
    • A CMOS voltage divider having a first chain containing series-connected MOS transistors of a first conductivity type is described. Each of the MOS transistors have identical geometrical dimensions and, at the same time, each have identical gate-source voltages. The MOS transistors operate in the linear range of their characteristic curve and between opposite ends of the first chain an input voltage to be divided is present and at whose source terminals the voltage fractions can in each case be picked off. Provision is made of a second chain containing series-connected MOS transistors, complementary to the first MOS transistors. The second chain has the same number of transistors as the first MOS transistors and with the same geometrical dimension in each case. The MOS transistors of the first chain are connected to the MOS transistors of the second chain in such a way that each MOS transistor chain generates the gate-source bias voltage for the respective other MOS transistor chain.
    • 描述了具有包含第一导电类型的串联MOS晶体管的第一链的CMOS分压器。 每个MOS晶体管具有相同的几何尺寸,并且同时具有相同的栅源电压。 MOS晶体管在其特性曲线的线性范围内工作,并且在第一链的相对端之间存在待分割的输入电压,并且在每个情况下,其源极端子的电压分数可以被拾取。 提供了包含与第一MOS晶体管互补的串联MOS晶体管的第二链。 第二链具有与第一MOS晶体管相同数量的晶体管,并且在每种情况下具有相同的几何尺寸。 第一链的MOS晶体管以这样的方式连接到第二链的MOS晶体管,使得每个MOS晶体管链为相应的另一个MOS晶体管链产生栅极 - 源极偏置电压。
    • 9. 发明授权
    • Integrated memory having sense amplifiers disposed on opposite sides of a cell array
    • 具有设置在单元阵列的相对侧上的读出放大器的集成存储器
    • US06259641B1
    • 2001-07-10
    • US09560545
    • 2000-04-28
    • Zoltan ManyokiThomas RöhrThomas Böhm
    • Zoltan ManyokiThomas RöhrThomas Böhm
    • G11C700
    • G11C11/22G11C7/06G11C7/1042
    • An integrated memory includes a cell array having memory cells disposed at points of intersection of first bit lines and second bit lines with word lines in the cell array. When one of the memory cells is addressed, the memory content is not affected if respective bit lines associated with each of the memory cells are at a standby potential. Sense amplifiers for amplifying data read from the memory cells onto the bit lines are included, each associated with respective first and second bit lines and disposed on opposite sides of the cell array. Also provided are first switching elements, through which each bit line is connected to the associated sense amplifier, and second switching elements, through which each bit line is connected, on that side of its first switching element which is remote from the associated sense amplifier, to a standby potential. Column selection lines are each connected to the control connections of the first and second switching elements in at least one of the first and one of the second bit lines. Each bit line is connected to the standby potential through third switching elements. A first control line is connected to all the third switching elements in the first bit lines, and a second control line is connected to all the third switching elements in the second bit lines.
    • 集成存储器包括具有存储单元阵列的单元阵列,该存储单元设置在第一位线和第二位线的交点处与单元阵列中的字线。 当存储器单元之一被寻址时,如果与每个存储器单元相关联的各个位线处于待机电位,则存储器内容不受影响。 包括用于将从存储器单元读取的数据放大到位线的读出放大器,每个与相应的第一和第二位线相关联并且设置在单元阵列的相对侧上。 还提供了第一开关元件,每个位线通过该开关元件连接到相关联的读出放大器,以及在其第一开关元件的远离相关读出放大器的该侧上连接每个位线的第二开关元件, 到备用电位。 列选择线各自连接到第一和第二位线中的至少一个中的第一和第二开关元件的控制连接。 每个位线通过第三个开关元件连接到待机电位。 第一控制线连接到第一位线中的所有第三开关元件,第二控制线连接到第二位线中的所有第三开关元件。