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1. 发明授权

US07821822B2 Read/write elements for a three-dimensional magnetic memory 有权
标题翻译：用于三维磁记忆体的读/写元件
公开(公告)号：US07821822B2
公开(公告)日：2010-10-26
申请号：US12191956
申请日：2008-08-14
申请人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
发明人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C5/02 , G11C11/1675 , H01L27/228
摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
摘要翻译：公开了用于三维磁存储器的读/写元件。一个实施例描述了集成读/写元件的阵列。阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。第一写入导体和第二写入导体在磁极周围形成电流环。

2. 发明授权

US08018765B2 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US08018765B2
公开(公告)日：2011-09-13
申请号：US12553670
申请日：2009-09-03
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

3. 发明授权

US07606065B2 Three-dimensional magnetic memory having bits transferrable between storage layers 有权
标题翻译：具有可在存储层之间传送的位的三维磁存储器
公开(公告)号：US07606065B2
公开(公告)日：2009-10-20
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

4. 发明申请

US20080151596A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
公开(公告)号：US20080151596A1
公开(公告)日：2008-06-26
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/063 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

5. 发明授权

US07388776B1 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US07388776B1
公开(公告)日：2008-06-17
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

6. 发明授权

US06680832B2 CPP magnetoresistive sensors with in-stack longitudinal biasing and overlapping magnetic shield 失效
标题翻译： CPP磁阻传感器具有堆叠纵向偏置和重叠磁屏蔽
公开(公告)号：US06680832B2
公开(公告)日：2004-01-20
申请号：US09853352
申请日：2001-05-11
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Jordan A. Katine , Jeffrey S. Lille , Ching H. Tsang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/112 , G11B5/313 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor or read head has a magnetic shield geometry that covers the side walls of the sensor structure to prevent side reading caused by magnetic flux entering from adjacent data tracks. The shield geometry includes a bottom shield with a substantially planar surface and a specially shaped top shield. The top shield has substantially vertical portions generally parallel to the side walls of the sensor structure, a horizontal top portion over the trackwidth region of the sensor, and horizontal side portions formed over the portions of the bottom shield on either side of the sensor structure. The insulating gap material that separates the bottom and top shields is in contact with the horizontal portions of the bottom shield and the side walls of the sensor structure.
摘要翻译：电流垂直平面（CPP）磁阻传感器或读头具有覆盖传感器结构的侧壁的磁屏蔽几何形状，以防止由相邻数据轨道进入的磁通量引起的侧读。屏蔽几何形状包括具有基本平坦表面的底部屏蔽和特别形状的顶部屏蔽。顶部屏蔽件具有大致平行于传感器结构的侧壁的大致垂直部分，在传感器的轨道宽度区域上方的水平顶部部分，以及形成在传感器结构的任一侧上的底部屏蔽部分之上的水平侧部分。分离底部和顶部屏蔽件的绝缘间隙材料与底部屏蔽件的水平部分和传感器结构的侧壁接触。

7. 发明授权

US08335056B2 CPP sensors with hard bias structures that shunt sense current towards a shield 有权
标题翻译：具有硬偏压结构的CPP传感器将屏蔽层的感应电流分流
公开(公告)号：US08335056B2
公开(公告)日：2012-12-18
申请号：US11957466
申请日：2007-12-16
申请人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
发明人： Hamid Balamane , Jeffrey R. Childress , Robert E. Fontana, Jr. , Jordan A. Katine , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.
摘要翻译：公开了传感器和相关的制造方法。本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。光圈的宽度控制注入到传感器叠层顶部的电流密度。此外，可以形成硬偏置结构以电耦合到传感器堆叠。传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

8. 发明授权

US06440639B1 High-aspect ratio resist development using safe-solvent mixtures of alcohol and water 失效
标题翻译：使用酒精和水的安全溶剂混合物的高纵横比抗蚀剂显影
公开(公告)号：US06440639B1
公开(公告)日：2002-08-27
申请号：US09672187
申请日：2000-09-28
申请人： Robert E. Fontana, Jr. , Jordan A. Katine , Ernst Kratschmer , Michael J. Rooks , Ching H. Tsang , Raman Gobichettipalayam Viswanathan
发明人： Robert E. Fontana, Jr. , Jordan A. Katine , Ernst Kratschmer , Michael J. Rooks , Ching H. Tsang , Raman Gobichettipalayam Viswanathan
IPC分类号： G03C516
CPC分类号： G03F7/322 , G03F7/00
摘要： A high-aspect ratio resist profile is obtained using a development process wherein a mixture of an alcohol and water is used as the developer. The alcohol/water mixture is non-toxic, and does not cause excess swelling and cracking of the resist during the development process.
摘要翻译：使用醇和水的混合物作为显影剂的显影方法获得高纵横比抗蚀剂轮廓。醇/水混合物是无毒的，并且在显影过程中不会引起抗蚀剂的过度膨胀和开裂。

9. 发明授权

US07253991B2 Planar perpendicular recording head 有权
标题翻译：平面垂直记录头
公开(公告)号：US07253991B2
公开(公告)日：2007-08-07
申请号：US10836918
申请日：2004-04-30
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127 , G11B5/31
CPC分类号： G11B5/315 , G11B5/10 , G11B5/1278
摘要： A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
摘要翻译：描述了不需要研磨的用于垂直记录的磁头（滑块）。该头部具有平行于晶片表面的空气轴承表面。线圈和极片由平行于空气轴承表面设置的薄膜形成。标准光刻技术可用于定义形状，间隙和极片尺寸。可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。主回极片和返回极片的厚度由沉积过程而不是研磨来控制。用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。

10. 发明授权

US06847510B2 Magnetic tunnel junction device with bottom free layer and improved underlayer 有权
标题翻译：具有底部自由层和改进的底层的磁隧道连接装置
公开(公告)号：US06847510B2
公开(公告)日：2005-01-25
申请号：US10256722
申请日：2002-09-27
申请人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/31 , G11B5/39 , H01L43/08 , G11C11/16
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) device usable as a magnetic memory cell or magnetoresistive sensor, such as a MTJ read head for magnetic recording, has the free ferromagnetic layer located on the bottom of the device, the bottom free layer being formed on a special underlayer. The MTJ read head may be a flux-guided head that uses the free layer as a flux guide for directing magnetic flux from the magnetic media to the sensing region of the MTJ. The special underlayer for the growth of the free layer is an alloy comprising Mn, one of Pt, Ni, Ir and Os, and an additive X selected from Ta, Al, Ti, Cu, Cr and V. Without the additive, the underlayer alloy is antiferromagnetic. The additive is present in an amount sufficient to render the alloy to have no magnetic ordering, i.e., it is neither antiferromagnetic nor ferromagnetic, but without substantially affecting the preferred crystalline texture and unit cell size so that the underlayer is well-suited as a growth-enhancing underlayer for the free layer.
摘要翻译：可用作磁存储单元或磁阻传感器（例如用于磁记录的MTJ读头）的磁隧道结（MTJ）器件具有位于器件底部的自由铁磁层，底部自由层形成于特殊的底层 MTJ读头可以是磁通引导头，其使用自由层作为磁通引导件，用于将磁通量从磁介质引导到MTJ的感测区域。用于生长自由层的特殊底层是包含Mn，Pt，Ni，Ir和Os之一的合金，以及选自Ta，Al，Ti，Cu，Cr和V的添加剂X.没有添加剂，底层合金是反铁磁的。添加剂的存在量足以使合金不具有磁性排列，即它既不是反铁磁性的也不是铁磁性的，但是基本上不影响优选的晶体结构和晶胞尺寸，使得底层非常适合作为生长 - 增强自由层的底层。

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