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1. 发明授权

US5733705A Acid Scavengers for use in chemically amplified photoresists 失效
标题翻译：用于化学放大光致抗蚀剂的酸清除剂
公开(公告)号：US5733705A
公开(公告)日：1998-03-31
申请号：US730687
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译：质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。

2. 发明授权

US5667938A Acid scavengers for use in chemically amplified photoresists 失效
标题翻译：用于化学放大光致抗蚀剂的酸清除剂
公开(公告)号：US5667938A
公开(公告)日：1997-09-16
申请号：US731224
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译：质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。

3. 发明授权

US5609989A Acid scavengers for use in chemically amplified photoresists 失效
公开(公告)号：US5609989A
公开(公告)日：1997-03-11
申请号：US466568
申请日：1995-06-06
申请人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
发明人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

4. 发明授权

US06340734B1 Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method 有权
标题翻译：倍半硅氧烷聚合物，合成方法，光致抗蚀剂组合物和多层平版印刷方法
公开(公告)号：US06340734B1
公开(公告)日：2002-01-22
申请号：US09454563
申请日：1999-12-07
申请人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
IPC分类号： C08G7706
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/128
摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
摘要翻译：通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

5. 发明授权

US6087064A Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method 有权
标题翻译：倍半硅氧烷聚合物，合成方法，光致抗蚀剂组合物和多层平版印刷方法
公开(公告)号：US6087064A
公开(公告)日：2000-07-11
申请号：US146867
申请日：1998-09-03
申请人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
IPC分类号： G03F7/004 , G03F7/075 , G03C1/725
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/128
摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr.sub.3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
摘要翻译：通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

6. 发明授权

US06344305B1 Radiation sensitive silicon-containing resists 失效
标题翻译：辐射敏感含硅抗蚀剂
公开(公告)号：US06344305B1
公开(公告)日：2002-02-05
申请号：US09654350
申请日：2000-09-01
申请人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
发明人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.
摘要翻译：提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物。一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线，光束和离子束照射。

7. 发明授权

US06187505B1 Radiation sensitive silicon-containing resists 失效
标题翻译：辐射敏感含硅抗蚀剂
公开(公告)号：US06187505B1
公开(公告)日：2001-02-13
申请号：US09241441
申请日：1999-02-02
申请人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
发明人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.
摘要翻译：提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物。一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线，光束和离子束照射。

8. 发明授权

US06268436B1 Approach to formulating irradiation sensitive positive resists 失效
标题翻译：制定辐射敏感阳性抗蚀剂的方法
公开(公告)号：US06268436B1
公开(公告)日：2001-07-31
申请号：US09473225
申请日：1999-12-27
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Quighuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Quighuang Lin
IPC分类号： C08L6500
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/107 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
摘要翻译：本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基团保护，并且所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

9. 发明授权

US06200726B1 Optimization of space width for hybrid photoresist 失效
标题翻译：混合光刻胶的空间宽度优化
公开(公告)号：US06200726B1
公开(公告)日：2001-03-13
申请号：US09170756
申请日：1998-10-13
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ahmad D. Katnani , Paul A. Rabidoux
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ahmad D. Katnani , Paul A. Rabidoux
IPC分类号： G03C173
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , G03F7/095 , H01L21/0274 , H01L21/3085 , H01L28/82 , Y10S430/106 , Y10S430/115 , Y10S430/128
摘要： A photo resist composition contains at least one photoacid generator (PAG), wherein at least two photoacids are produced upon exposure of the photo resist to actinic energy and wherein the photo resist is capable of producing a hybrid response. The function of providing generation of two photoacids in a hybrid resist is to optimize the use of hybrid resist by varying the hybrid space width. The at least two photoacids may differ in their effectiveness at catalyzing at least one mechanism of the hybrid response. In particular, one photoacid may be a weaker acid and another may be a stronger acid, wherein there exists a difference of at least four orders of magnitude between the acid dissociation constant (Ka) of the weaker acid and the stronger acid. A method for optimizing space width in a hybrid photo resist includes the steps of: 1) selecting a desired space width; 2) selecting at least one photoacid generator (PAG), wherein at least two photoacids will be produced upon exposure to actinic energy in relative proportions sufficient to produce the desired space width in the hybrid photo resist; and 3) forming a hybrid photo resist composition comprising the at least one PAG. The step of selecting at least one PAG may include first determining the space width produced alone by each photoacid in a group of candidate photoacids and then selecting the photoacids and corresponding at least one PAG that will produce the desired space width.
摘要翻译：光致抗蚀剂组合物含有至少一种光致酸发生剂（PAG），其中当光致抗蚀剂暴露于光化能时，产生至少两种光酸，并且其中光致抗蚀剂能产生杂化响应。在混合抗蚀剂中提供两种光酸的产生的功能是通过改变混合空间宽度来优化混合抗蚀剂的使用。至少两种光酸在催化至少一种混合反应机制方面的有效性可能不同。特别地，一种光致酸可以是较弱的酸，而另一种可能是较强的酸，其中在较弱酸的酸解离常数（Ka）和较强酸之间存在至少四个数量级的差异。一种用于优化混合光刻胶中的空间宽度的方法包括以下步骤：1）选择期望的空间宽度; 2）选择至少一种光致酸产生剂（PAG），其中当以相对比例暴露于足以产生混合光致抗蚀剂中所需空间宽度的光化能时，将产生至少两种光酸; 和3）形成包含所述至少一种PAG的混合光刻胶组合物。选择至少一个PAG的步骤可以包括首先确定由一组候选光酸中的每个光酸酸单独产生的空间宽度，然后选择将产生所需空间宽度的光酸和相应的至少一个PAG。

10. 发明授权

US6043003A E-beam application to mask making using new improved KRS resist system 有权
公开(公告)号：US6043003A
公开(公告)日：2000-03-28
申请号：US356309
申请日：1999-07-16
申请人： James J. Bucchignano , Wu-Song Huang , Ahmad D. Katnani , Kim Y. Lee , Wayne M. Moreau , Karen E. Petrillo
发明人： James J. Bucchignano , Wu-Song Huang , Ahmad D. Katnani , Kim Y. Lee , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039 , G03F7/30
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/143
摘要： The present invention relates to chemically amplified resists and resist systems wherein some of the polar functional groups of the aqueous base soluble polymer or copolymers are protected with a cyclic aliphatic ketal protecting group such as methoxycyclohexanyl. The resists and the resist systems of the present invention containing the new protecting group have improved shelf-life and vacuum stability as compared to the prior art resists. Thus, the resists of the present invention are highly useful in e-beam lithographic applications.

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