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1. 发明申请

US20060194144A1 Low blur molecular resist 失效
公开(公告)号：US20060194144A1
公开(公告)日：2006-08-31
申请号：US11068339
申请日：2005-02-28
申请人： Ratnam Sooriyakumaran , Hoa Truong
发明人： Ratnam Sooriyakumaran , Hoa Truong
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/106
摘要： A molecular resist composition and method of use is disclosed wherein the composition includes no silicon containing material, no polymeric material, and a substituted oligosaccharide, wherein the substituted oligosaccharide is substituted with at least one acid-cleavable —OR group, wherein the substituted oligosaccharide has 2 to 10 monosaccharides, wherein the molecular resist may be initially insoluble in developer, which may be an aqueous alkaline solution or developer consisting essentially of water. In some embodiments, the molecular resist may become soluble in the developer consisting essentially of water upon exposure to radiation having a wavelength of 193 nm or less and a post-exposure bake temperature from about room temperature to about 110° C. The resist material of the present invention may be used to print feature sizes wherein developed images may have a line/spacing not greater than than 120 nm when the developer consists essentially of water or an aqueous alkaline solution.

2. 发明申请

US20050112382A1 Molecular photoresists containing nonpolymeric silsesquioxanes 有权
标题翻译：含有非聚合倍半硅氧烷的分子光刻胶
公开(公告)号：US20050112382A1
公开(公告)日：2005-05-26
申请号：US10721302
申请日：2003-11-24
申请人： Robert Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong
发明人： Robert Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong
IPC分类号： B32B25/20 , C07F7/21 , G03F7/004 , G03F7/075
CPC分类号： C07F7/21 , G03F7/0045 , G03F7/0755 , Y10S430/106 , Y10S430/127 , Y10T428/31663
摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.
摘要翻译：提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T T的温度下从倍半硅氧烷中裂解通常在T T以下至少5℃。倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

3. 发明申请

US20070254235A1 SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY 有权
标题翻译：自拍贴图
公开(公告)号：US20070254235A1
公开(公告)日：2007-11-01
申请号：US11380731
申请日：2006-04-28
申请人： ROBERT ALLEN , PHILLIP BROCK , CARL LARSON , DANIEL SANDERS , RATNAM SOORIYAKUMARAN , LINDA SUNDBERG , HOA TRUONG , GREGORY WALLRAFF
发明人： ROBERT ALLEN , PHILLIP BROCK , CARL LARSON , DANIEL SANDERS , RATNAM SOORIYAKUMARAN , LINDA SUNDBERG , HOA TRUONG , GREGORY WALLRAFF
IPC分类号： G03C1/00
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/0757
摘要： Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要翻译：公开了可用于浸没式光刻中而不使用另外的顶涂层的抗蚀剂组合物。抗蚀剂组合物包含光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和自 - 面漆抗蚀剂添加剂。还公开了使用抗蚀剂组合物在衬底上形成图案化材料层的方法。

4. 发明申请

US20060128914A1 photoresist composition 有权
标题翻译：光致抗蚀剂组合物
公开(公告)号：US20060128914A1
公开(公告)日：2006-06-15
申请号：US11330659
申请日：2006-01-12
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F220/22
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化的直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2）（CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2））或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

5. 发明申请

US20050124774A1 Low activation energy photoresists 有权
标题翻译：低活化能光刻胶
公开(公告)号：US20050124774A1
公开(公告)日：2005-06-09
申请号：US10729169
申请日：2003-12-04
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard Dipietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard Dipietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F12/20 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0046 , G03F7/0397
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯属单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

6. 发明申请

US20050019696A1 Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US20050019696A1
公开(公告)日：2005-01-27
申请号：US10916934
申请日：2004-08-12
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F20/22 , C08F220/28 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/73
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物：其中R 1表示氢（H），1至20个碳的直链或支链烷基，或半或全氟化线性或碳原子数为1〜20的支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基（CF 3）基团的取代的脂族基团，或取代或未取代的芳族基团; 并且其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

7. 发明申请

US20080193879A1 SELF-TOPCOATING PHOTORESIST FOR PHOTOLITHOGRAPHY 有权
标题翻译：自拍贴图光刻机
公开(公告)号：US20080193879A1
公开(公告)日：2008-08-14
申请号：US12023108
申请日：2008-01-31
申请人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Truong , Gregory M. Wallraff
发明人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Truong , Gregory M. Wallraff
IPC分类号： C08F220/22 , G03F7/004 , G03F7/20
CPC分类号： G03F7/2041 , C08F220/22 , G03F7/0046 , G03F7/0397 , G03F7/11 , Y10S430/108 , Y10S430/111
摘要： Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
摘要翻译：光刻胶添加剂聚合物和光致抗蚀剂制剂，可用于浸没式光刻，而不使用额外的面漆。抗蚀剂组合物包括光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和光致抗蚀剂添加剂聚合物。还有一种使用包括光致抗蚀剂添加剂聚合物的光致抗蚀剂制剂的方法。

8. 发明申请

US20070254236A1 HIGH CONTACT ANGLE TOPCOAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESS 失效
标题翻译：高接触角顶板材料及其在成像过程中的应用
公开(公告)号：US20070254236A1
公开(公告)日：2007-11-01
申请号：US11380744
申请日：2006-04-28
申请人： ROBERT ALLEN , PHILLIP BROCK , CARL LARSON , RATNAM SOORIYAKUMARAN , LINDA SUNDBERG , HOA TRUONG
发明人： ROBERT ALLEN , PHILLIP BROCK , CARL LARSON , RATNAM SOORIYAKUMARAN , LINDA SUNDBERG , HOA TRUONG
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0752 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.
摘要翻译：公开了一种用于施加在光致抗蚀剂材料上的面漆材料。面漆材料包含酸惰性化合物。面漆材料还包括聚合物或低聚物或保持架结构，其与成像层混合可忽略，并且可溶于碱性显影液。还公开了在基材上形成图案化材料层的方法和包含面漆材料的涂布基材。

9. 发明申请

US20070231734A1 Low activation energy dissolution modification agents for photoresist applications 有权
标题翻译：用于光刻胶应用的低活化能溶解改性剂
公开(公告)号：US20070231734A1
公开(公告)日：2007-10-04
申请号：US11239507
申请日：2005-09-29
申请人： Robert Allen , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong
发明人： Robert Allen , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , C07J9/005 , C07J17/00 , G03F7/0392 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115
摘要： A photoresist composition including a polymer, a photo acid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
摘要翻译：包含聚合物，光酸产生剂和溶解改性剂的光致抗蚀剂组合物，使用光致抗蚀剂组合物形成图像的方法和溶解改性剂组合物。溶解改性剂不溶于含水碱性显影剂中，并且抑制聚合物在显影剂中的溶解，直至酸被光致酸性发生剂暴露于光化辐射为止，因此溶解改性剂在合适的温度下变得可溶于显影剂，允许聚合物溶解在显影剂中。 DMA是用酸不稳定的乙氧基乙基，四氢呋喃基和天竺葵酰基保护的葡糖苷，胆酸盐，柠檬酸盐和金刚烷二羧酸盐。

10. 发明申请

US20050123852A1 Method for patterning a low activation energy photoresist 有权
标题翻译：图案化低活化能光致抗蚀剂的方法
公开(公告)号：US20050123852A1
公开(公告)日：2005-06-09
申请号：US10729452
申请日：2003-12-04
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： G03F7/004 , G03F7/039 , G03F7/40
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟基烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯烃单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

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