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    • 4. 发明授权
    • CMOS voltage controlled ring oscillator
    • CMOS压控环形振荡器
    • US5365204A
    • 1994-11-15
    • US145364
    • 1993-10-29
    • John M. AngiulliArun K. GhoseRichard R. KonianSamuel R. LevineDavid MeltzerWen-Yuan WangLeon L. Wu
    • John M. AngiulliArun K. GhoseRichard R. KonianSamuel R. LevineDavid MeltzerWen-Yuan WangLeon L. Wu
    • H03K3/03H03K3/354H03B5/24
    • H03K3/354H03K3/0315
    • A variable frequency digital ring oscillator which can be formed in a small area for use in testing of chips employs a ring oscillator formed of CMOS inverters, transmission gates and capacitors and CMOS logic as a voltage controlled ring oscillator. A wide range of frequency of oscillation is achieved with small number of components. The ring oscillator circuit's oscillator frequency is controlled only by DC voltages, such as may be provided by (but not limited to) a manufacturing chip tester. The output signal of the oscillator swings between Vdd and Vss and does not need additional level translation circuits to drive CMOS logic. The ring oscillator can be composed of an odd number of CMOS inverters connected in cascade to form a loop. We provide a CMOS transmission gate with PMOS and NMOS transistor device inserted between each adjacent inverter and a MOS capacitor connected between the output of each transmission gate and the Vss supply of the ring oscillator circuit (conventionally ground). The gate voltages of the PMOS and NMOS transistors in the transmission gate are different and provide a different DC voltage between Vdd and Vss. Variation of the gate voltages of the transmission gates controls the frequency of oscillation of the circuit. The use of a plurality of cascaded delay elements between inverters achieves a wider range of oscillation frequency than possible with a single delay element.
    • 可以形成在用于芯片测试的小区域中的可变频数字环形振荡器采用由CMOS反相器,传输门和电容器形成的环形振荡器和作为压控环形振荡器的CMOS逻辑。 通过少量组件实现了宽范围的振荡。 环形振荡器电路的振荡器频率仅由直流电压控制,例如可以由(但不限于)制造芯片测试器提供。 振荡器的输出信号在Vdd和Vss之间摆动,不需要额外的电平转换电路来驱动CMOS逻辑。 环形振荡器可以由串联连接的奇数CMOS反相器组成,形成一个环路。 我们提供一个CMOS传输门,PMOS和NMOS晶体管器件插在每个相邻的反相器和连接在每个传输门的输出和环形振荡器电路的Vss电源(传统接地)之间的MOS电容器。 传输门中PMOS和NMOS晶体管的栅极电压不同,并在Vdd和Vss之间提供不同的直流电压。 传输门的栅极电压的变化控制电路的振荡频率。 在逆变器之间使用多个级联延迟元件实现比单个延迟元件可能的更宽的振荡频率范围。