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    • 3. 发明授权
    • Optoelectronic integrated circuit multiplex
    • 光电集成电路多路复用
    • US4718063A
    • 1988-01-05
    • US746704
    • 1985-06-20
    • Ronald E. ReedyJay H. HarrisDonald J. Albares
    • Ronald E. ReedyJay H. HarrisDonald J. Albares
    • H04J14/08H04J3/04
    • H04J14/08
    • An apparatus and method for improving VLSI and VHSIC system data transmission relies on a plurality of optoelectronic switches actuated by pulses from at least one light source, a laser. Differing lengths of optical fibers couple the pulsed light from the laser at different times to create a sequence of actuation light pulses for the plurality of optoelectronic switches each time the light source is pulsed. Thus the information appearing at a plurality of parallel data nodes is converted to serial form at an output bonding pad on the chip. Optionally, a similar pulsing of electrooptic switches coupled to an input bonding pad converts serial data to parallel form. Faster input and output switching times are provided, reliability and complexity are reduced, particularly as compared to off-chip coupling arrangements, and power consumption and dissipation are reduced.
    • 用于改进VLSI和VHSIC系统数据传输的装置和方法依赖于由至少一个光源(激光)的脉冲致动的多个光电开关。 不同长度的光纤在不同时间将来自激光器的脉冲光耦合,以在每次光源被脉冲时产生用于多个光电开关的致动光脉冲序列。 因此,出现在多个并行数据节点处的信息在芯片上的输出接合焊盘处被转换为串行形式。 可选地,耦合到输入接合焊盘的电光开关的类似脉冲将串行数据转换为并行形式。 提供了更快的输入和输出切换时间,降低了可靠性和复杂性,特别是与片外耦合布置相比,功耗和功耗降低。
    • 4. 发明授权
    • Integrated optical wavelength demultiplexer
    • 集成光波长解复用器
    • US4696536A
    • 1987-09-29
    • US750630
    • 1985-07-01
    • Donald J. AlbaresRonald E. Reedy
    • Donald J. AlbaresRonald E. Reedy
    • G02B6/12G02B6/34G02B6/42
    • G02B6/12007G02B6/12004G02B6/2938G02B6/4215G02B6/4259G02B6/4274G02B6/2931
    • An optical wavelength demultiplexer is fabricated as an integral part of an integrated circuit chip. A waveguide in a common substrate having a chirped diffraction grating receives a number of wavelengths of optically modulated data from a single mode fiber. The wavelengths are diffracted from the plane of the lines of the grating into discrete beams angles through the substrate and impinge on appropriately located photodetectors. Signals provided by the detectors are fed to and processed by other integrated circuitry also contained on the chip. The common transparent substrate such as fused silica, glass, sapphire, lithium niobate or lithium tantalate mount semiconductor films of Si, Ge, GaAs or quanternary alloys that have the detectors and other integrated circuitry that are created by conventional CVD techniques. The waveguide and appropriate chirp grating are formed by established deposition and photolithographic procedures ot assure the separation of as many as fifty discrete beams of as many different wavelengths and their projection onto a like number of photodetectors to provide for a heretofore unattainable degree of optical wavelength demultiplexing.
    • 制造光学波长解复用器作为集成电路芯片的组成部分。 具有啁啾衍射光栅的公共衬底中的波导从单模光纤接收多个光调制数据的波长。 波长从光栅线的平面衍射成通过衬底的离散束角,并撞击适当定位的光电检测器。 由检测器提供的信号被馈送到也包含在芯片上的其它集成电路并由其处理。 诸如熔融石英,玻璃,蓝宝石,铌酸锂或钽酸锂的常见的透明基底安装有Si,Ge,GaAs或季铵合金的半导体膜,其具有通过常规CVD技术产生的检测器和其它集成电路。 波导和适当的啁啾光栅通过建立的沉积和光刻过程形成,确保分离多达五十个具有许多不同波长的离散束,并将其投影到相同数目的光电检测器上,以提供迄今为止无法达到的光学波长解复用程度 。
    • 5. 发明授权
    • Method and apparatus for an optically clocked optoelectronic track and hold device
    • 用于光时钟光电跟踪和保持装置的方法和装置
    • US07307266B1
    • 2007-12-11
    • US10730713
    • 2003-11-26
    • Chen-Kuo SunRichard C. EdenChing-Ten ChangDonald J. Albares
    • Chen-Kuo SunRichard C. EdenChing-Ten ChangDonald J. Albares
    • G02B27/00G02B6/28G01J1/04G11C27/02H03K17/74H03M1/00
    • G11C27/02G11C27/024G11C27/026H03K17/04H03K17/16H03K17/74H03K17/78
    • A method and apparatus for optically clocked optoelectronic track and hold (“OCOETH”) device. The OCOETH device includes a diode bridge, input node, at least two current sources and at least two photodetectors. The input node is operatively coupled to the diode bridge and can receive an analog input signal. The at least two current sources are operatively coupled to the diode bridge and can forward bias the diode bridge. The at least two photodetectors are operatively coupled to the diode bridge and can receive an optical input clocking signal, and can reverse bias and forward bias the diode bridge in response to the optical input clocking signal. The hold capacitor is operatively coupled to the diode bridge and can track the analog input signal when the diode bridge is forward biased, and can hold the analog input signal when the diode bridge switches from forward biased to reverse biased.
    • 一种用于光时钟光电跟踪和保持(“OCOETH”)设备的方法和装置。 OCOETH装置包括二极管桥,输入节点,至少两个电流源和至少两个光电检测器。 输入节点可操作地耦合到二极管电桥并且可以接收模拟输入信号。 至少两个电流源可操作地耦合到二极管桥并且可以对二极管桥进行正向偏置。 所述至少两个光电检测器可操作地耦合到二极管电桥并且可以接收光输入时钟信号,并且可以响应于光输入时钟信号而反向偏置和向前偏置二极管桥。 保持电容器可操作地耦合到二极管电桥,并且可以在二极管电桥正向偏置时跟踪模拟输入信号,并且当二极管电桥从正向偏置切换到反向偏置时,可以保持模拟输入信号。
    • 6. 发明授权
    • Method for characterization of optical waveguide devices using partial
coherence interferometry
    • 使用部分相干干涉测量的光波导器件的表征方法
    • US5341205A
    • 1994-08-23
    • US643385
    • 1991-01-15
    • Matthew N. McLandrichDonald J. AlbaresStephen A. Pappert
    • Matthew N. McLandrichDonald J. AlbaresStephen A. Pappert
    • G01B9/02G01B11/06G01M11/00G01N21/84
    • G01M11/31G01B11/0675G01B9/02065
    • An optical system and method include a short coherence length edge, emitt LED, a fiber optic coupler probe, and a Michelson interferometer to measure the parameter of thickness of optical devices, such as thin silicon substrate samples and to characterize other parameters of optical waveguide devices such as absolute attenuation, effective refractive index, and changes in these parameters with the application of a modulation voltage or an external disturbance. The measurable thickness range from a few to hundreds of microns with a thickness precision exceeding 0.1 micron for a 10 micron sample. In situ localized measurements of samples in an etching chamber are obtainable to control processing and provide for thickness uniformity. Attenuation measurements for optical waveguides compare the values of interferogram maxima at the values of the reference arm path length to changes corresponding to one and two times the optical path length of the sample. Effective refractive index is determined by counting the number of fringes in the recorded interferogram between successive maxima. Changes in these parameters due to an external disturbance are measured by comparing the interferograms before and after. The sample stays in the system during all measurements which can also indicate the degree of coupling or interaction between simultaneous refractive index and absorption changes.
    • 光学系统和方法包括短相干长度边缘,发射LED,光纤耦合器探针和迈克尔逊干涉仪,以测量光学器件(例如薄硅衬底样品)的厚度参数,并表征光波导器件的其他参数 例如绝对衰减,有效折射率以及这些参数随着调制电压或外部干扰的应用而发生的变化。 对于10微米样品,可测量的厚度范围从几百微米到几百微米,厚度精度超过0.1微米。 可以对蚀刻室中的样品进行原位局部测量,以控制处理并提供厚度均匀性。 光波导的衰减测量将参考臂路径长度的干涉图最大值与对应于样品的光程长度的一倍和两倍的变化进行比较。 通过计数连续最大值之间的记录干涉图中条纹数来确定有效折射率。 通过比较前后的干涉图来测量由于外部干扰引起的这些参数的变化。 样品在所有测量过程中停留在系统中,这也可以指示同时折射率和吸收变化之间的耦合度或相互作用程度。