专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5493445A Laser textured surface absorber and emitter 失效
标题翻译：激光纹理表面吸收器和发射器
公开(公告)号：US5493445A
公开(公告)日：1996-02-20
申请号：US274564
申请日：1994-07-13
申请人： Douglas A. Sexton , Stephen D. Russell , Donald J. Albares
发明人： Douglas A. Sexton , Stephen D. Russell , Donald J. Albares
IPC分类号： H01L21/3065 , H01L31/0236 , G02B5/20 , H01J15/00
CPC分类号： H01L21/3065 , H01L31/0236 , Y02E10/50
摘要： A light stop having at least one appropriately laser textured surface assures the absorption of energy including laser emissions that impinge on the at least one surface to thereby inhibit reflected energy therefrom. Optionally, an improved emitter of energy is created by at least one appropriately laser textured surface having an increased surface area of emission to increase the emissive power of the surface to thereby provide improved conductive and radiative cooling. An improved absorber and emitter is fabricated by providing front side and backside textured surfaces. All these capabilities are provided in a variety of structural configurations.
摘要翻译：具有至少一个适当的激光纹理表面的光停止件确保吸收包括激发在至少一个表面上的激光发射的能量，从而抑制反射能量。可选地，改进的能量发射体由具有增加的发射表面积的至少一个适当的激光纹理化表面产生，以增加表面的发射功率，从而提供改进的导电和辐射冷却。通过提供前侧和后侧纹理表面来制造改进的吸收体和发射体。所有这些功能都以各种结构配置提供。

2. 发明授权

US5385633A Method for laser-assisted silicon etching using halocarbon ambients 失效
标题翻译：使用卤代烃环境的激光辅助硅蚀刻方法
公开(公告)号：US5385633A
公开(公告)日：1995-01-31
申请号：US501707
申请日：1990-03-29
申请人： Stephen D. Russell , Douglas A. Sexton , Richard J. Orazi
发明人： Stephen D. Russell , Douglas A. Sexton , Richard J. Orazi
IPC分类号： B01D53/00 , B01J19/12 , H01L21/3065 , H01L31/0236 , B44S1/22
CPC分类号： B01D53/007 , B01J19/121 , H01L21/3065 , H01L31/02363 , Y02E10/50
摘要： An etching process allows a selective single-step patterning of silicon devices in a noncorrosive environment. The etching of silicon relies on a maskless laser-assisted technique in a gaseous halocarbon ambient, such as the gaseous chlorofluorocarbons, dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on silicon occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold (approximately 0.75 J/cm.sup.2). When incident fluence exceeds the ablation threshold (approximately 2.2 J/cm.sup.2) an undesirable, increased surface roughness is observed. Etch rates as large as approximately 15 angstroms per pulse are attained within predetermined processing windows. This provides a means for thin membrane formation in silicon, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.
摘要翻译：蚀刻工艺允许在非腐蚀性环境中硅器件的选择性单步图案化。硅的蚀刻依赖于气态卤代烃环境中的无掩模激光辅助技术，例如气态氯氟烃，二氯二氟甲烷和氯五氟乙烷。当来自248nm的准分子激光器的入射流量超过熔融阈值（约0.75J / cm 2）时，这些环境中的激光辅助光热化学蚀刻反应发生在这些环境中。当入射注量超过烧蚀阈值（约2.2J / cm 2）时，观察到不期望的增加的表面粗糙度。在预定的处理窗口内可获得每脉冲大约15埃的蚀刻速率。这提供了一种在硅中薄膜形成，快速蚀刻和加工封装器件或部分制造的裸片的方法。与常规湿式化学蚀刻相比，加工步骤的减少提高了产量，可靠性和成本。

3. 发明授权

US5310990A Method of laser processing ferroelectric materials 失效
标题翻译：激光加工铁电材料的方法
公开(公告)号：US5310990A
公开(公告)日：1994-05-10
申请号：US709671
申请日：1991-06-03
申请人： Stephen D. Russell , Douglas A. Sexton
发明人： Stephen D. Russell , Douglas A. Sexton
IPC分类号： B23K26/00 , C21D8/12 , H01L21/02 , H01L21/3105 , H01L21/311 , H01L21/314 , B23K26/12
CPC分类号： H01L28/55 , B23K26/362 , C21D8/1294 , H01L21/3105 , H01L21/31105 , H01L21/31116 , H01L21/31122
摘要： Processing methods transform ferroelectric precursor films into a desired crystalline structure without adversely heating nearby materials and circuitry such as those found associated with lead zirconate titanate films. The thin film sample is placed within an appropriate chamber, where a suitable ambient is in contact with the thin film sample. The ambient may be air, oxygen or any other ambient which is known in the art to be appropriate for annealing ferroelectric materials. In this regard annealing in air can done without the processing chamber. The process for annealing relies upon continuous wave (CW) laser annealing, pulse UV annealing with or without a laser and various combinations of thermal pretreatment and processing to allow solid state diffusion in accordance with parameters appropriate for a particular application. Methods of laser patterning thin film ferroelectrics without adversely damaging adjacent or underlying layers, e.g. electrodes, are also disclosed.
摘要翻译：加工方法将铁电前体膜转变成所需的晶体结构，而不会不利地加热附近的材料和电路，例如与锆钛酸铅薄膜相关的那些。将薄膜样品放置在合适的室内，其中合适的环境与薄膜样品接触。环境可以是空气，氧气或本领域已知的适于退火铁电材料的任何其它环境。在这方面，空气中的退火可以在没有处理室的情况下完成。退火的过程依赖于连续波（CW）激光退火，有或没有激光的脉冲UV退火以及热预处理和处理的各种组合，以根据适合于特定应用的参数进行固态扩散。激光图案化薄膜铁电体的方法，而不会不利地损坏相邻或下层，例如，电极也被公开。

4. 发明授权

US5225371A Laser formation of graded junction devices 失效
标题翻译：分级结器件的激光形成
公开(公告)号：US5225371A
公开(公告)日：1993-07-06
申请号：US856010
申请日：1992-03-17
申请人： Douglas A. Sexton , Stephen D. Russell
发明人： Douglas A. Sexton , Stephen D. Russell
IPC分类号： H01L21/20
CPC分类号： H01L21/2026 , Y10S117/904 , Y10S438/936
摘要： A method for fabricating graded heterojunction electronic devices uses laser melting and recrystallization of layered films to create an epitaxial alloy heterojunction. Layering an appropriately doped polysilicon film over a germanium film that has been deposited upon a base region allows the laser melting and recrystallization thereof to create a graded epitaxial silicon/germanium alloy heterojunction. Other film materials could be selected for other graded heterojunctions. The method provides for sufficient device design flexibility including deeper junction formation and reduces the problems associated with contamination.
摘要翻译：用于制造渐变异质结电子器件的方法使用层状膜的激光熔融和再结晶以产生外延合金异质结。在已经沉积在基极区上的锗膜上层叠适当掺杂的多晶硅膜允许其激光熔化和重结晶以产生渐变的外延硅/锗合金异质结。可以选择其他膜材料用于其他分级异质结。该方法提供足够的器件设计灵活性，包括更深的结形成并减少与污染相关的问题。

5. 发明授权

US5840592A Method of improving the spectral response and dark current characteristics of an image gathering detector 失效
标题翻译：提高图像采集检测器的光谱响应和暗电流特性的方法
公开(公告)号：US5840592A
公开(公告)日：1998-11-24
申请号：US273445
申请日：1994-07-05
申请人： Stephen D. Russell , Douglas A. Sexton , Eugene P. Kelley , Ronald E. Reedy
发明人： Stephen D. Russell , Douglas A. Sexton , Eugene P. Kelley , Ronald E. Reedy
IPC分类号： G01R31/311 , G09G3/00 , H01L27/148 , H01L31/18 , H01L21/265
CPC分类号： H01L31/1864 , H01L27/1464 , H01L27/14806 , G01R31/311 , G09G3/006 , Y02E10/50 , Y10S148/093 , Y10S148/094
摘要： A method of simultaneously improving the spectral response and dark current characteristics of an image gathering detector is disclosed. The method uses an excimer laser to redistribute and activate ion implanted dopant species in the backside of an image gathering device such as a backside-illuminated CCD. Alternately, the excimer laser is used to incorporate dopants from a gaseous ambient into the backside of the image gathering device and simultaneously redistribute and activate the dopants. The redistribution of the dopant is controlled by the laser pulses and provides for a peak dopant concentration at the back surface of the image gathering device which provides for improved spectral response and simultaneously improves dark current characteristics.
摘要翻译：公开了同时提高图像采集检测器的光谱响应和暗电流特性的方法。该方法使用准分子激光器在诸如背面照射CCD的图像采集装置的背面中重新分布并激活离子注入的掺杂物质。或者，准分子激光器用于将来自气态环境的掺杂剂并入图像采集装置的背面，同时重新分布并激活掺杂剂。掺杂剂的再分布由激光脉冲控制，并且在图像采集装置的背面提供峰值掺杂剂浓度，其提供改进的光谱响应并同时改善暗电流特性。

6. 发明授权

US5451378A Photon controlled decomposition of nonhydrolyzable ambients 失效
标题翻译：光子控制不可水解环境的分解
公开(公告)号：US5451378A
公开(公告)日：1995-09-19
申请号：US861410
申请日：1992-03-31
申请人： Stephen D. Russell , Douglas A. Sexton
发明人： Stephen D. Russell , Douglas A. Sexton
IPC分类号： A62D3/00 , A62D3/17 , A62D3/34 , A62D3/35 , A62D101/22 , B01D53/00 , B01J19/12
CPC分类号： B01J19/121 , B01D53/007 , B01J19/123 , H01L21/3065 , H01L31/0236 , Y02E10/50 , Y10S422/906
摘要： A method and apparatus to decompose nonhydrolyzable ambients such as chloluorocarbons and nitrogen trifluoride which enables the conventional disposal of their byproducts are disclosed. It employs photo-decomposition of the nonhydrolyzable ambient using UV light and a mediating species to allow chemical reactions to occur which form an effluent which is hydrolyzed by conventional methods. This abatement process is amenable to point-of-use decomposition systems required for modular cluster tool systems used in microelectronic device fabrication.
摘要翻译：公开了分解不可水解环境的方法和装置，例如氯氟烃和三氟化氮，其能够常规处理其副产物。它使用UV光和介质物质对不可水解环境进行光分解，以允许发生化学反应，形成通过常规方法水解的流出物。该减排过程适用于微电子器件制造中使用的模块化集群工具系统所需的使用点分解系统。

7. 发明授权

US06372592B1 Self-aligned MOSFET with electrically active mask 失效
标题翻译：具有电活动掩模的自对准MOSFET
公开(公告)号：US06372592B1
公开(公告)日：2002-04-16
申请号：US08768694
申请日：1996-12-18
申请人： Stephen D. Russell , Douglas A. Sexton , Bruce W. Offord , George P. Imthurn
发明人： Stephen D. Russell , Douglas A. Sexton , Bruce W. Offord , George P. Imthurn
IPC分类号： H01L21336
CPC分类号： H01L29/6678 , H01L29/458
摘要： A method for making a self-aligned FET with an electrically active mask comprises the steps of forming a semiconductor layer on an insulating substrate, forming an electrically nonconductive oxide layer on the semiconductor layer, forming an electrically conductive metal layer on the oxide layer, patterning the metal layer and the oxide layer to form an electrically active gate on semiconductor layer, introducing dopants into the semiconductor layer to form a source region and a drain region masked by the metal gate, and illuminating the source and the drain regions with a pulsed excimer laser having a wavelength from about 150 nm to 350 nm to anneal the source region and the drain region.
摘要翻译：制造具有电活性掩模的自对准FET的方法包括以下步骤：在绝缘基板上形成半导体层，在半导体层上形成非导电氧化物层，在氧化物层上形成导电金属层，图案化所述金属层和所述氧化物层在半导体层上形成电活性栅极，将掺杂剂引入到所述半导体层中以形成由所述金属栅极掩蔽的源极区域和漏极区域，以及用脉冲准分子照射所述源极区域和所述漏极区域具有从约150nm至350nm的波长的激光器，以退火源极区域和漏极区域。

8. 发明授权

US5688715A Excimer laser dopant activation of backside illuminated CCD's 失效
标题翻译：准分子激光掺杂剂激活背面照射CCD
公开(公告)号：US5688715A
公开(公告)日：1997-11-18
申请号：US514922
申请日：1995-08-14
申请人： Douglas A. Sexton , Stephen D. Russell , Ronald E. Reedy , Eugene P. Kelley
发明人： Douglas A. Sexton , Stephen D. Russell , Ronald E. Reedy , Eugene P. Kelley
IPC分类号： G01R31/311 , H01L21/3065 , H01L27/148 , H01L31/0236 , H01L21/263
CPC分类号： H01L21/3065 , H01L27/1464 , H01L27/14806 , H01L31/0236 , G01R31/311 , Y02E10/50 , Y10S148/09
摘要： A method uses an excimer laser to activate previously implanted dopant species in the backside of a backside-illuminated CCD or to incorporate dopant ions from a gaseous ambient into the backside of a backside-illuminated CCD and simultaneously activate. The controlled ion implantation of the backside and subsequent thin layer heating by the short wavelength pulsed excimer laser energy activates the dopant and provides for an improved dark current response and improved spectral response. The energy of the pulsed excimer laser is applied uniformly across a backside-illuminated CCD in a very thin layer of the semiconductor substrate (usually silicon) material that requires annealing to uniformly activate the dopant. The very thin layer of the material can be heated to exceedingly high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Repair of semiconductor dies by effecting a uniform annealing enables salvage and utilization of otherwise discardable components by bringing their dark current response to within an acceptable range.
摘要翻译：一种方法使用准分子激光器激活背面照射的CCD的背面中的先前注入的掺杂物质，或者将来自气体环境的掺杂剂离子掺入背面照射的CCD的背面并同时激活。通过短波长脉冲准分子激光能量的背侧和随后的薄层加热的受控离子注入激活掺杂剂并提供改进的暗电流响应和改进的光谱响应。将脉冲准分子激光器的能量均匀地涂覆在半导体衬底（通常是硅）材料的非常薄的背面照射的CCD中，其需要退火以均匀地激活掺杂剂。该材料的非常薄的层可以以纳秒级时间刻度加热至非常高的温度，同时大部分精细CCD基板保持在低温。通过进行均匀退火对半导体管芯进行修复，可使其暗电流响应在可接受的范围内，从而能够回收和利用其他可丢弃元件。

9. 发明授权

US5354420A Method for laser-assisted etching of III-V and II-VI semiconductor compounds using chlorofluorocarbon ambients 失效
标题翻译：使用氯氟烃环境对III-V和II-VI半导体化合物进行激光辅助蚀刻的方法
公开(公告)号：US5354420A
公开(公告)日：1994-10-11
申请号：US508317
申请日：1990-04-10
申请人： Stephen D. Russell , Douglas A. Sexton , Richard J. Orazi
发明人： Stephen D. Russell , Douglas A. Sexton , Richard J. Orazi
IPC分类号： B01D53/00 , B01J19/12 , H01L21/3065 , H01L31/0236 , B44C1/22
CPC分类号： B01D53/007 , B01J19/121 , H01L21/3065 , H01L31/02363 , Y02E10/50
摘要： An etching process allows a selective single-step patterning of III-V or II-VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.
摘要翻译：蚀刻工艺允许在非腐蚀性环境中III-V或II-VI半导体化合物器件如GaAs和InP或CdS和ZnSe的选择性单步图案化。蚀刻依赖于气态氯氟烃环境中的无掩模激光辅助技术，例如气态二氯二氟甲烷和氯五氟乙烷。当来自248nm的准分子激光器的入射注量超过熔体阈值时，III-V或II-VI半导体化合物中的激光辅助光热化学蚀刻反应发生在这些环境中。这提供了在III-V或II-VI半导体化合物中薄膜形成的手段，快速蚀刻和封装器件或部分制造的裸片的加工。与常规湿式化学蚀刻相比，加工步骤的减少提高了产量，可靠性和成本。

10. 发明授权

US5323013A Method of rapid sample handling for laser processing 失效
标题翻译：激光加工快速样品处理方法
公开(公告)号：US5323013A
公开(公告)日：1994-06-21
申请号：US861409
申请日：1992-03-31
申请人： Eugene P. Kelly , Stephen D. Russell , Douglas A. Sexton
发明人： Eugene P. Kelly , Stephen D. Russell , Douglas A. Sexton
IPC分类号： H01L21/677 , B01J19/12
CPC分类号： H01L21/67778
摘要： A method of rapid sample handling in a production environment for laser processing of individual microelectronic die is particularly suited for handling partially fabricated die and die which are susceptible to mechanical and electrostatic damage, such as backside illuminated CCDs requiring backside dopant activation and laser texturing of sidewalls. Securing a die within a modified sample holder provides for electrostatic and mechanical protection during laser processing. Placing the modified die holder onto a feeder base portion that engages a "tractor-feed" translation subsystem protects the die during a translation and positioning of the die below and aligned with a laser processing structure. A window holder is engaged with the die holder to seal the die in a processing chamber and to assure an appropriate pressurizing with a gaseous ambient for a desired processing. Illuminating, repetitively if desired, the die in the chamber with a laser beam of appropriate size, laser fluence, repetition rate and number of pulses processes the die. Next, the processed die is translated from beneath laser processing structure while the next die is correctly positioned for processing.
摘要翻译：在用于单个微电子管芯的激光加工的生产环境中快速样品处理的方法特别适用于处理易受机械和静电损伤的部分制造的管芯和管芯，例如需要背面掺杂剂激活的背面照射CCD和侧壁的激光纹理化。固定在改进的样品架内的模头可在激光加工过程中提供静电和机械保护。将改进的模具座放置在接合“拖拉机进给”翻译子系统的馈送器基座部分上，在下述的模具的平移和定位以及与激光加工结构对准的情况下，保护模具。窗口支架与模具座接合以将模具密封在处理室中并且确保用气体环境适当地加压以进行所需的处理。如果需要，重复地照明，具有适当尺寸的激光束的腔室中的模具，激光能量密度，重复率和脉冲数处理模具。接下来，将加工的模具从激光加工结构下方转换，同时下一个模具被正确定位用于处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式