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    • 6. 发明授权
    • Data processing system having centralized memory refresh
    • 数据处理系统具有集中的内存刷新
    • US4317169A
    • 1982-02-23
    • US12081
    • 1979-02-14
    • William Panepinto, Jr.Ming T. MiuChester M. Nibby, Jr.Jian-Kuo Shen
    • William Panepinto, Jr.Ming T. MiuChester M. Nibby, Jr.Jian-Kuo Shen
    • G06F12/00G11C11/406G06F13/00
    • G11C11/406
    • In a data processing system which includes a central processing unit and one or more main memory units for storing program software instructions and program data, logic is provided within the CPU to signal the main memory units, comprised of semiconductor random access memory chips, that a memory refresh operation can be performed. The logic is organized such that the memory refresh operation signal may be given to the main memory units in parallel with and without detracting from other CPU operations. Further, logic is provided within the CPU to interrupt the CPU normal processing and perform a memory refresh operation if one has not been performed with a predetermined time period. Logic is provided within each main memory unit to accept the memory refresh signals from the CPU and to discard those memory refresh signals that would refresh the memory more frequently than required to retain the memory contents thus reducing main memory power consumption.
    • 在包括中央处理单元和用于存储程序软件指令和程序数据的一个或多个主存储器单元的数据处理系统中,在CPU内提供逻辑以对由半导体随机存取存储器芯片组成的主存储器单元进行信号, 可以执行存储器刷新操作。 逻辑被组织使得可以将存储器刷新操作信号并行并且不降低其他CPU操作的情况下给予主存储器单元。 此外,在CPU内提供中断CPU正常处理的逻辑,并且如果在预定时间段内未执行存储器刷新操作则执行存储器刷新操作。 在每个主存储器单元内提供逻辑以接受来自CPU的存储器刷新信号,并且丢弃将比保持存储器内容所需的频率更新的内存刷新信号,从而减少主存储器功耗的那些存储器刷新信号。
    • 10. 发明授权
    • Sequential word aligned address apparatus
    • 顺序字对齐地址设备
    • US4376972A
    • 1983-03-15
    • US110521
    • 1980-01-08
    • Robert B. JohnsonChester M. Nibby, Jr.Dana W. Moore
    • Robert B. JohnsonChester M. Nibby, Jr.Dana W. Moore
    • G11C11/401G06F12/02G06F12/04G06F12/06G06F13/12G06F13/00
    • G06F12/04G06F12/02
    • A memory subsystem which couples to a multiword bus for processing memory requests received therefrom includes at least a pair of independently addressable dynamic memory module units. Each memory unit includes a number of rows of random access memory (RAM) chips. The subsystem further includes an adder circuit, a pair of tri-state operated address register circuits and timing circuits. The address circuits include a pair of tri-state operated address registers which couple to the bus and to the set of address lines to each memory unit. In response to a memory request, the registers store row and column address portions of a chip address of the memory request. A multibit adder circuit is connected to increment by one the low order row address when the least significant address bits of the memory request indicate a subboundary address condition thereby enabling access to a pair of sequential word locations. Whenever a memory request specifies an address which cannot access a double word, boundary circuits upon detecting the condition cause the timing circuits to generate only timing signals necessary for accessing the first word location.
    • 耦合到多字总线以用于处理从其接收的存储器请求的存储器子系统包括至少一对独立可寻址的动态存储器模块单元。 每个存储器单元包括多行随机存取存储器(RAM)芯片。 子系统还包括加法器电路,一对三态操作地址寄存器电路和定时电路。 地址电路包括一对三态操作地址寄存器,其耦合到总线和到每个存储器单元的地址线集合。 响应于存储器请求,寄存器存储存储器请求的芯片地址的行和列地址部分。 当存储器请求的最低有效地址位指示子边界地址条件从而使得能够访问一对顺序字位置时,多位加法器电路被连接以递增一个低位行地址。 每当存储器请求指定不能访问双字的地址时,边界电路在检测到条件时,使定时电路仅产生访问第一字位置所必需的定时信号。