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    • 6. 发明授权
    • Writing a circuit design pattern with shaped particle beam flashes
    • 编写具有成形粒子束闪光的电路设计图案
    • US07476880B2
    • 2009-01-13
    • US11243299
    • 2005-10-03
    • Benyamin BullerRichard L. LozesRobert M. Sills
    • Benyamin BullerRichard L. LozesRobert M. Sills
    • G21K5/10H01J37/08
    • H01J37/302B82Y10/00B82Y40/00H01J37/3174H01J2237/31776Y10S430/143
    • A shaped particle beam writing strategy can be used to write a pattern with a particle beam onto a substrate. The pattern comprises a circuit design that is fractured into a plurality of arbitrary polygons. The writing strategy comprises transforming and fracturing the arbitrary polygons into a plurality of restricted polygons, each restricted polygon being represented by a location coordinate, at least two dimension coordinates, and at least one external edge indicator. Thereafter, the restricted polygons are tiled into a set of tiles comprising interior tiles and external edge tiles. Flash data is assigned for each tile such that the interior tiles are assigned a first flash area and the external edge tiles are assigned a second flash area that is smaller than the first flash area. The flash data is arranged in a selected order to write the pattern with a modulated particle beam, such as an electron beam, on a substrate.
    • 可以使用成形的粒子束写入策略来将具有粒子束的图案写入到衬底上。 该图案包括断裂成多个任意多边形的电路设计。 写入策略包括将任意多边形变换和压缩成多个受限多边形,每个受限多边形由位置坐标,至少两个维度坐标以及至少一个外部边缘指示符表示。 此后,将限制的多边形平铺成包括内部瓦片和外部边缘瓦片的一组瓦片。 为每个瓦片指定闪存数据,使得内部瓦片被分配第一闪光区域,并且外部边缘瓦片被分配比第一闪光区域小的第二闪光区域。 闪光数据以选定的顺序排列,以便在衬底上用诸如电子束的调制的粒子束来写入图案。
    • 7. 发明授权
    • Placement effects correction in raster pattern generator
    • 栅格图案生成器中的放置效果校正
    • US07476879B2
    • 2009-01-13
    • US11241887
    • 2005-09-30
    • Richard L. LozesBenyamin Buller
    • Richard L. LozesBenyamin Buller
    • G21G5/00H01J37/302
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31769H01J2237/31796Y10S430/143
    • A method for generating a charged particle beam flash. The method includes computing an array of dose correction multipliers, based, at least in part, on a resist sensitivity correction factor, and computing a displacement vector to account for placement effects, such as resist charging. The displacement vector is defined as {right arrow over (δ)}c=dP{circle around (×)}{right arrow over (K)} , where {right arrow over (δ)}c—represents the displacement vector, d represents the array of dose correction multipliers, P represents pattern exposure data, {circle around (×)} represents a mathematical convolution operation, and {right arrow over (K)} represents a Poisson kernel converted to a spatial domain. The method further includes using the displacement vector to modify position of the charged particle beam flash.
    • 一种产生带电粒子束闪光的方法。 该方法包括至少部分地基于抗蚀剂敏感度校正因子来计算剂量校正乘数的阵列,以及计算位移矢量以考虑诸如抗蚀剂充电的放置效应。 位移矢量被定义为{右箭头(delta)} c = dP {(x)周围的圆({K}}右箭头}),其中{右箭头((delta)} c-表示位移矢量,d 表示剂量校正乘数的阵列,P表示图案曝光数据,{circle around(x)}表示数学卷积运算,{right arrow over(K)}表示转换为空间域的泊松核。 该方法还包括使用位移矢量来修改带电粒子束闪光的位置。
    • 8. 发明授权
    • Beam exposure writing strategy system and method
    • 光束曝光写作策略系统及方法
    • US07244953B2
    • 2007-07-17
    • US11243304
    • 2005-10-03
    • Benyamin BullerRichard L. Lozes
    • Benyamin BullerRichard L. Lozes
    • H01J37/302
    • H01J37/3174B82Y10/00B82Y40/00H01J37/3026H01J2237/30488H01J2237/30494
    • A beam exposure writing strategy method and system are disclosed for exposing a desired pattern on a substrate, by raster scanning a beam such as a particle beam, across a major field on the substrate. The beam is also vector scanned across a minor field of the substrate superimposed along the major field raster scan. The beam is selectively blanked and unblanked as the beam is being scanned. The unblanked flashes of the beam are modulated in coordination with the raster and vector scanning to expose the desired pattern on the substrate. The disclosed system and method generating an adjustable length microvector having a maximum range of at least about M times a nominal length λ, where M is equal to at least four and λ is substantially equal to a dimension of a nominal flash area, the nominal flash location dimension being substantially greater than a field cell dimension.
    • 公开了一种束曝光写入策略方法和系统,用于通过在衬底上的主场上光栅扫描诸如粒子束的光束来在衬底上暴露期望的图案。 光束也沿着主场光栅扫描叠加的衬底的次视场矢量扫描。 当光束被扫描时,光束被选择性地消隐并且被清除。 与光栅和矢量扫描协调地调制光束的未闪烁闪光以暴露衬底上的期望图案。 所公开的系统和方法产生可调长度的微向量,其具有至少约公称长度λ的M倍的最大范围,其中M等于至少四个,并且λ基本上等于标称闪光区域的尺寸,标称闪光 位置尺寸基本上大于场单元尺寸。