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1. 发明授权

US07362543B2 Magnetoresistive/inductive write head assembly formed with seed layers having a uniform thickness 有权
标题翻译：由具有均匀厚度的种子层形成的磁阻/感应写头组件
公开(公告)号：US07362543B2
公开(公告)日：2008-04-22
申请号：US11108313
申请日：2005-04-18
申请人： Richard Hsiao , Quang Le , Paul P. Nguyen , Son Van Nguyen , Mustafa Pinarbasi , Patrick R. Webb , Howard G. Zolla
发明人： Richard Hsiao , Quang Le , Paul P. Nguyen , Son Van Nguyen , Mustafa Pinarbasi , Patrick R. Webb , Howard G. Zolla
IPC分类号： G11B5/17
CPC分类号： B82Y10/00 , G11B5/17 , G11B5/313 , G11B5/3163 , G11B5/3967 , Y10T29/49043 , Y10T29/49044 , Y10T29/49064 , Y10T29/49073
摘要： The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.
摘要翻译：本发明提供一种用于制造用于磁写头的线圈元件的方法。使用光刻技术在衬底上形成线圈图案。使用反应离子蚀刻蚀刻衬底，在衬底中产生线圈状沟槽。使用离子束沉积沉积薄膜种子层。用金属电镀衬底，用金属填充沟槽。基板进行化学机械抛光以去除多余的金属并平面化写入头的空气轴承表面。

2. 发明授权

US06948231B2 Method of depositing material into high aspect ratio features 失效
标题翻译：将材料沉积成高纵横比特征的方法
公开(公告)号：US06948231B2
公开(公告)日：2005-09-27
申请号：US10153333
申请日：2002-05-21
申请人： Richard Hsiao , Quang Le , Paul P. Nguyen , Son Van Nguyen , Mustafa Pinarbasi , Patrick R. Webb , Howard G. Zolla
发明人： Richard Hsiao , Quang Le , Paul P. Nguyen , Son Van Nguyen , Mustafa Pinarbasi , Patrick R. Webb , Howard G. Zolla
IPC分类号： G11B5/17 , G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/17 , G11B5/313 , G11B5/3163 , G11B5/3967 , Y10T29/49043 , Y10T29/49044 , Y10T29/49064 , Y10T29/49073
摘要： The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.
摘要翻译：本发明提供一种用于制造用于磁写头的线圈元件的方法。使用光刻技术在衬底上形成线圈图案。使用反应离子蚀刻蚀刻衬底，在衬底中产生线圈状沟槽。使用离子束沉积沉积薄膜种子层。用金属电镀衬底，用金属填充沟槽。基板进行化学机械抛光以去除多余的金属并平面化写入头的空气轴承表面。

3. 发明申请

US20100079845A1 Reflection-Controllable Electrochromic Device Using A Base Metal As A Transparent Conductor 有权
标题翻译：使用基础金属作为透明导体的可反射控制电致变色装置
公开(公告)号：US20100079845A1
公开(公告)日：2010-04-01
申请号：US12242917
申请日：2008-10-01
申请人： Zhongchun Wang , Paul P. Nguyen
发明人： Zhongchun Wang , Paul P. Nguyen
IPC分类号： G02F1/153
CPC分类号： G02F1/155 , G02F1/19
摘要： An all-solid-state electrochromic device comprises a transparent base material, and an electrochromic multilayer-stack structure formed on the transparent base material. The electrochromic multilayer-stack structure comprises a first transparent-conductive film formed on the transparent base material, an ion-storage layer formed on the first transparent-conductive film, a solid-electrolyte layer formed on the ion-storage layer, and an electrochromic layer formed on the solid-electrolyte layer. The electrochromic layer comprises a reflection-controllable electrochromic layer. In one exemplary embodiment, the electrochromic layer comprises a reflection-controllable layer that comprises at least one of antimony and an antimony-based alloy. A second transparent-conductive film can be formed on the reflection-controllable layer, or between the reflection-controllable layer and the solid-electrolyte layer. In one exemplary embodiment, the second transparent-conductive layer comprises a base metal and/or a base metal alloy.
摘要翻译：全固体电致变色装置包括透明基材和形成在透明基材上的电致变色多层堆叠结构。电致变色多层堆叠结构包括形成在透明基材上的第一透明导电膜，形成在第一透明导电膜上的离子存储层，形成在离子保存层上的固体电解质层和电致变色层，形成在固体电解质层上。电致变色层包括反射可控电致变色层。在一个示例性实施例中，电致变色层包括反射可控层，其包含锑和锑基合金中的至少一种。第二透明导电膜可以形成在反射可控层上，或反射可控层和固体电解质层之间。在一个示例性实施例中，第二透明导电层包括贱金属和/或贱金属合金。

4. 发明申请

US20090323161A1 ELECTRICAL CHARACTERISTICS OF ELECTROCHROMIC DEVICES 有权
标题翻译：电光器件的电气特性
公开(公告)号：US20090323161A1
公开(公告)日：2009-12-31
申请号：US12165598
申请日：2008-06-30
申请人： Eugene Anthony Fuss , Roger W. Phillips , Paul P. Nguyen
发明人： Eugene Anthony Fuss , Roger W. Phillips , Paul P. Nguyen
IPC分类号： G02F1/153
CPC分类号： G02F1/1533 , G02F1/155 , G02F2001/1536 , G02F2001/1555 , G02F2201/07
摘要： One exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and an electrochromic layer. Another exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and a counter electrode. Yet another exemplary embodiment of an electrochromic device comprises a type-2 ion-blocking layer formed on a transparent conductive layer as an ion diffusion barrier overlayer. Still another exemplary embodiment of an electrochromic device comprises a transparent conductive layer formed from tantalum nitride.
摘要翻译：电致变色器件的一个示例性实施例包括形成在透明导电层和电致变色层之间的氮化钽 - 氮化物离子阻挡层。电致变色器件的另一示例性实施例包括在透明导电层和对电极之间形成的氮化钽 - 氮化物离子阻挡层。电致变色器件的另一示例性实施例包括形成在作为离子扩散阻挡层的透明导电层上的2型离子阻挡层。电致变色器件的另一示例性实施例包括由氮化钽形成的透明导电层。

5. 发明申请

US20090302403A1 SPIN TORQUE TRANSFER MAGNETIC MEMORY CELL 审中-公开
标题翻译：旋转转矩磁记忆细胞
公开(公告)号：US20090302403A1
公开(公告)日：2009-12-10
申请号：US12176295
申请日：2008-07-18
申请人： Paul P. Nguyen
发明人： Paul P. Nguyen
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161
摘要： A spin-torque magnetic memory element comprises a large magnetic volume, and a thick magnetic layer. The magnetic layer comprises a nearly round shape, a small intrinsic anisotropy and a uniaxial anisotropy that is substantially based on the shape. In one exemplary embodiment, the nearly round shape substantially comprises about a 60 nm by about a 40 nm ellipse shape, and the thick magnetic layer comprises a thickness of about 20 nm to about 100 nm, preferably about 40 nm. In another exemplary embodiment, the thick magnetic layer comprises a first layer of magnetic material that comprises a reasonably high unaxial magnetic anisotropy; and a second layer of magnetic material comprises between about no anisotropy (i.e., 0 anisotropy) and a much lower unaxial magnetic anisotropy than the first layer of magnetic material.
摘要翻译：自旋扭矩磁存储元件包括大的磁体积和厚的磁性层。磁性层包括基本上基于形状的近似圆形，小的本征各向异性和单轴各向异性。在一个示例性实施例中，近似圆形基本上包括约60nm至约40nm的椭圆形状，厚磁层包括约20nm至约100nm，优选约40nm的厚度。在另一示例性实施例中，厚磁性层包括第一层磁性材料，其包含相当高的单轴磁各向异性; 并且第二层磁性材料包括与第一层磁性材料相比几乎不具有各向异性（即，各向异性）和低的单轴磁各向异性。

6. 发明授权

US07531882B2 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization 有权
标题翻译：具有高垂直各向异性和面内平衡磁化的自由层的自旋转移磁性元件
公开(公告)号：US07531882B2
公开(公告)日：2009-05-12
申请号：US11239969
申请日：2005-09-30
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： H01L43/00
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。至少一个自由层具有高的垂直各向异性。高垂直各向异性具有垂直各向异性能，其至少为平面外退磁能的百分之二十。

7. 发明授权

US07242045B2 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US07242045B2
公开(公告)日：2007-07-10
申请号：US10783416
申请日：2004-02-19
申请人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： H01L29/76
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

8. 发明授权

US06933155B2 Methods for providing a sub .15 micron magnetic memory structure 有权
标题翻译：提供15微米磁记忆体结构的方法
公开(公告)号：US06933155B2
公开(公告)日：2005-08-23
申请号：US10443936
申请日：2003-05-21
申请人： Frank Albert , Yiming Huai , Paul P. Nguyen
发明人： Frank Albert , Yiming Huai , Paul P. Nguyen
IPC分类号： H01L21/00 , H01L43/12
CPC分类号： H01L43/12
摘要： A method for providing a magnetic element is disclosed. The method includes providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method also includes defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish, polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法。该方法包括提供至少一个磁性元件层并提供用于掩蔽该至少一个磁性元件层的一部分的硬掩模结构。硬掩模结构由可刻蚀硬掩模结构的硬掩模材料制成。在确定磁性元件的宽度的同时，硬掩模结构还用作掩模。该方法还包括通过使用硬掩模结构作为掩模去除至少一个磁性元件层的一部分来限定磁性元件的宽度。硬掩模结构优选地用作平面化步骤的抛光停止，例如化学机械抛光，可以提供抛光抗蚀结构以改善结合有磁性元件的磁性存储器的平坦化。

9. 发明授权

US06847547B2 Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element 有权
标题翻译：使用自旋转移的磁静电耦合磁性元件和使用该磁性元件的MRAM器件
公开(公告)号：US06847547B2
公开(公告)日：2005-01-25
申请号：US10377689
申请日：2003-02-28
申请人： Frank Albert , Yiming Huai , Paul P. Nguyen
发明人： Frank Albert , Yiming Huai , Paul P. Nguyen
IPC分类号： G11C11/16 , G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure and at least one spin valve. The dual spin tunnel/valve structure includes a nonmagnetic spacer layer between a pinned layer and a free layer, another pinned layer and a barrier layer between the free layer and the other pinned layer. The free layers of the dual spin tunnel/valve structure and the spin valve are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure and the spin valve. In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件和相应的存储器的方法和系统。在一个方面，该方法和系统包括提供双自旋隧道/阀结构和至少一个自旋阀。双自旋隧道/阀结构包括在被钉扎层和自由层之间的非磁性间隔层，在自由层和另一个钉扎层之间的另一个钉扎层和阻挡层。双自旋隧道/阀结构和自旋阀的自由层是静磁耦合的。在一个实施例中，分离层位于双自旋隧道/阀结构和自旋阀之间。在另一方面，该方法和系统包括提供两个双自旋阀，其间的自旋隧道结，在一个实施例中，分离层。在两个方面，磁性元件配置成当写入电流通过磁性元件时，使用自旋转移来写入自由层。

10. 发明申请

US20110140217A1 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION 审中-公开
公开(公告)号：US20110140217A1
公开(公告)日：2011-06-16
申请号：US12938988
申请日：2010-11-03
申请人： Paul P. Nguyen , Yiming Huai , Eugene Chen
发明人： Paul P. Nguyen , Yiming Huai , Eugene Chen
IPC分类号： H01L29/82
CPC分类号： G01R33/1284 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3272 , H01F10/3286 , H01F41/302 , H01L43/08
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.

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