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1. 发明授权

US08913350B2 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements 有权
标题翻译：通过覆盖层诱导垂直各向异性和使用这种磁性元件的存储器来提供具有改进性能的磁性隧道接合元件的方法和系统
公开(公告)号：US08913350B2
公开(公告)日：2014-12-16
申请号：US12538489
申请日：2009-08-10
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC分类号： G11B5/33 , B82Y40/00 , G11C11/16 , H01L43/08 , G01R33/09 , B82Y25/00 , H01F41/30 , H01F10/32 , H01F41/34
CPC分类号： G01R33/098 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/325 , H01F41/34 , H01L43/08
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。该方法和系统包括提供固定，非磁性间隔物和自由层。自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。非磁性间隔层位于被钉扎层和自由层之间。该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

2. 发明授权

US08582253B1 Magnetic sensor having a high spin polarization reference layer 有权
标题翻译：具有高自旋极化参考层的磁传感器
公开(公告)号：US08582253B1
公开(公告)日：2013-11-12
申请号：US13488219
申请日：2012-06-04
申请人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
发明人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , G01R33/093 , G01R33/098 , G11B5/1278 , G11B5/3906 , H01L43/08
摘要： A magnetic sensor configured to reside in proximity to a recording medium during use having a high spin polarization reference layer stack above AFM layers. The reference layer stack comprises a first boron-free ferromagnetic layer above the AFM coupling layer; a magnetic coupling layer on and in contact with the first boron-free ferromagnetic layer; a second ferromagnetic layer comprising boron deposited on and contact with the magnetic coupling layer; and a boron-free third ferromagnetic layer on and in contact the second ferromagnetic layer. A barrier layer is deposited on and in contact with the boron-free third ferromagnetic layer. In one aspect of the invention, the magnetic coupling layer may comprise at least one of Ta, Ti, or Hf. A process for providing the magnetic sensor is also provided.
摘要翻译：磁传感器被配置为在使用期间驻留在记录介质附近，在AFM层上方具有高自旋极化参考层堆叠。参考层堆叠包括在AFM耦合层上方的第一无硼铁磁层; 与第一无硼铁磁层接触并与之接触的磁耦合层; 第二铁磁层，其包含沉积在磁耦合层上并与其接触的硼; 以及在第二铁磁层上并与之接触的无硼第三铁磁层。阻挡层沉积在无硼第三铁磁层上并与无硼第三铁磁层接触。在本发明的一个方面，磁耦合层可以包括Ta，Ti或Hf中的至少一种。还提供了一种用于提供磁传感器的过程。

3. 发明申请

US20120155156A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 审中-公开
标题翻译：用于提供具有通过覆盖层改善的性能的磁性隧道结构元件的方法和系统使用这种磁性元件诱导的各向异性和记忆
公开(公告)号：US20120155156A1
公开(公告)日：2012-06-21
申请号：US13035726
申请日：2011-02-25
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang , Kiseok Moon , Mohamad Towfik Krounbi
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang , Kiseok Moon , Mohamad Towfik Krounbi
IPC分类号： G11C11/02 , G11B5/84 , G11B5/64
CPC分类号： G11C11/1675 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/325 , H01F41/34
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。该方法和系统包括提供固定，非磁性间隔物和自由层。自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。非磁性间隔层位于被钉扎层和自由层之间。该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

4. 发明授权

US07973349B2 Magnetic device having multilayered free ferromagnetic layer 有权
标题翻译：具有多层自由铁磁层的磁性器件
公开(公告)号：US07973349B2
公开(公告)日：2011-07-05
申请号：US11498294
申请日：2006-08-01
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。每个自由铁磁层可以包括两层或更多层，并且可以是包括第一和第二铁磁层的多层自由铁磁性堆叠和在第一和第二铁磁层之间的非磁性间隔物。

5. 发明申请

US20090050991A1 Magnetic Element Having Low Saturation Magnetization 有权
标题翻译：具有低饱和磁化的磁性元件
公开(公告)号：US20090050991A1
公开(公告)日：2009-02-26
申请号：US11843496
申请日：2007-08-22
申请人： Hide Nagai , Zhitao Diao , Yiming Huai
发明人： Hide Nagai , Zhitao Diao , Yiming Huai
IPC分类号： G11B5/33
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials
摘要翻译：描述包括磁性元件的磁性装置。磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。自由层包括低饱和磁化材料

6. 发明授权

US07430135B2 Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density 有权
标题翻译：具有降低的自旋转移开关电流密度的电流切换自旋转移磁性器件
公开(公告)号：US07430135B2
公开(公告)日：2008-09-30
申请号：US11318337
申请日：2005-12-23
申请人： Yiming Huai , Zhitao Diao , Alex Panchula , Eugene Youjun Chen , Lien-Chang Wang
发明人： Yiming Huai , Zhitao Diao , Alex Panchula , Eugene Youjun Chen , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
摘要翻译：诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

7. 发明申请

US20080061388A1 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier 有权
标题翻译：基于利用多层屏障的磁隧道结的装置和电路
公开(公告)号：US20080061388A1
公开(公告)日：2008-03-13
申请号：US11520868
申请日：2006-09-13
申请人： Zhitao Diao , Yiming Huai
发明人： Zhitao Diao , Yiming Huai
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/16
摘要： Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.
摘要翻译：具有磁或磁阻隧道结（MTJS）的器件具有多层绝缘体阻挡层，以在器件电路中产生平衡的写入开关电流，或者产生具有自旋转矩传递感应开关磁化所需的平衡临界自旋电流的磁性器件，或对于正向和反向偏置方向的MTJ都是这样。

8. 发明申请

US20050184839A1 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US20050184839A1
公开(公告)日：2005-08-25
申请号：US10783416
申请日：2004-02-19
申请人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

9. 发明授权

US07916433B2 Magnetic element utilizing free layer engineering 有权
标题翻译：使用自由层工程的磁性元件
公开(公告)号：US07916433B2
公开(公告)日：2011-03-29
申请号：US12816108
申请日：2010-06-15
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/127 , G11C11/14
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/161 , H01L43/10 , Y10T428/115
摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。阻挡层位于被钉扎层和自由层之间，并且包括MgO。第一铁磁层位于阻挡层和中间层之间。第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子百分。第一铁磁层与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

10. 发明授权

US07821087B2 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US07821087B2
公开(公告)日：2010-10-26
申请号：US11685723
申请日：2007-03-13
申请人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

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