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1. 发明申请

US20100079845A1 Reflection-Controllable Electrochromic Device Using A Base Metal As A Transparent Conductor 有权
标题翻译：使用基础金属作为透明导体的可反射控制电致变色装置
公开(公告)号：US20100079845A1
公开(公告)日：2010-04-01
申请号：US12242917
申请日：2008-10-01
申请人： Zhongchun Wang , Paul P. Nguyen
发明人： Zhongchun Wang , Paul P. Nguyen
IPC分类号： G02F1/153
CPC分类号： G02F1/155 , G02F1/19
摘要： An all-solid-state electrochromic device comprises a transparent base material, and an electrochromic multilayer-stack structure formed on the transparent base material. The electrochromic multilayer-stack structure comprises a first transparent-conductive film formed on the transparent base material, an ion-storage layer formed on the first transparent-conductive film, a solid-electrolyte layer formed on the ion-storage layer, and an electrochromic layer formed on the solid-electrolyte layer. The electrochromic layer comprises a reflection-controllable electrochromic layer. In one exemplary embodiment, the electrochromic layer comprises a reflection-controllable layer that comprises at least one of antimony and an antimony-based alloy. A second transparent-conductive film can be formed on the reflection-controllable layer, or between the reflection-controllable layer and the solid-electrolyte layer. In one exemplary embodiment, the second transparent-conductive layer comprises a base metal and/or a base metal alloy.
摘要翻译：全固体电致变色装置包括透明基材和形成在透明基材上的电致变色多层堆叠结构。电致变色多层堆叠结构包括形成在透明基材上的第一透明导电膜，形成在第一透明导电膜上的离子存储层，形成在离子保存层上的固体电解质层和电致变色层，形成在固体电解质层上。电致变色层包括反射可控电致变色层。在一个示例性实施例中，电致变色层包括反射可控层，其包含锑和锑基合金中的至少一种。第二透明导电膜可以形成在反射可控层上，或反射可控层和固体电解质层之间。在一个示例性实施例中，第二透明导电层包括贱金属和/或贱金属合金。

2. 发明授权

US07804635B1 Electrochromic thin-film material 有权
标题翻译：电致变色薄膜材料
公开(公告)号：US07804635B1
公开(公告)日：2010-09-28
申请号：US12407950
申请日：2009-03-20
申请人： Zhongchun Wang , Paul P. Nguyen , Jeremy Alexander Dixon
发明人： Zhongchun Wang , Paul P. Nguyen , Jeremy Alexander Dixon
IPC分类号： G02F1/153 , G02F1/01 , G02F1/15 , C09K9/00
CPC分类号： C09K9/00
摘要： One exemplary embodiment of an electrochromic thin-film material comprises a metal-chalcogen compound; and/or a mixture or solid solution of one or more metal-rich metal-chalcogen compounds and/or lithium. One or more of the metals comprise Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof; and one or more of the chalcogens comprise O, S, Se, or Te, or combinations thereof.
摘要翻译：电致变色薄膜材料的一个示例性实施方案包括金属 - 硫属化合物; 和/或一种或多种富金属金属 - 硫属化合物和/或锂的混合物或固溶体。一种或多种金属包括Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W，Mn，Sb或Bi，或其组合; 并且一个或多个硫属元素包括O，S，Se或Te，或其组合。

3. 发明申请

US20100238535A1 ELECTROCHROMIC THIN-FILM MATERIAL 有权
标题翻译：电致密薄膜材料
公开(公告)号：US20100238535A1
公开(公告)日：2010-09-23
申请号：US12407950
申请日：2009-03-20
申请人： Zhongchun Wang , Paul P. Nguyen , Jeremy A. Dixon
发明人： Zhongchun Wang , Paul P. Nguyen , Jeremy A. Dixon
IPC分类号： G02F1/153 , C09K9/00
CPC分类号： C09K9/00
摘要： One exemplary embodiment of an electrochromic thin-film material comprises a metal-chalcogen compound; and/or a mixture or solid solution of one or more metal-rich metal-chalcogen compounds and/or lithium. One or more of the metals comprise Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof; and one or more of the chalcogens comprise O, S, Se, or Te, or combinations thereof.
摘要翻译：电致变色薄膜材料的一个示例性实施方案包括金属 - 硫属化合物; 和/或一种或多种富金属金属 - 硫属化合物和/或锂的混合物或固溶体。一种或多种金属包括Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W，Mn，Sb或Bi，或其组合; 并且一个或多个硫属元素包括O，S，Se或Te，或其组合。

4. 发明授权

US07646526B1 Durable reflection-controllable electrochromic thin film material 有权
标题翻译：耐用的反射可控电致变色薄膜材料
公开(公告)号：US07646526B1
公开(公告)日：2010-01-12
申请号：US12242897
申请日：2008-09-30
申请人： Zhongchun Wang , Paul P. Nguyen
发明人： Zhongchun Wang , Paul P. Nguyen
IPC分类号： G02F1/153 , G02F1/03 , G09G3/34
CPC分类号： C03C17/06 , C03C2217/27 , C22C12/00 , C23C14/185 , G02F1/1508 , G02F1/1523 , G02F1/153 , G02F2001/1536 , G02F2201/34
摘要： One exemplary embodiment of an electrochromic thin-film material comprises an alloy of antimony and one or more base metals; and/or an alloy of antimony, one or more base metals, and lithium; and/or an alloy of antimony, one or more base metals, lithium, and one or more noble metals. Another exemplary embodiment of an electrochromic thin-film material comprises a multilayer stack, the multilayer stack comprising at least one layer comprising one of antimony, antimony-lithium alloy, antimony-one or more base metals alloy, antimony-one or more base metals-lithium alloy, antimony-one or more base metals-one or more noble metals alloy, and antimony-one or more base metals-one or more noble metals-lithium alloy; and at least one alternating layer comprising one of a base metal and a base-metal alloy. One or more of the base metals comprise Co, Mn, Ni, Fe, Zn, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Cd, Mg, Al, Ga, In, Sn, Pb, and Bi, and alloys thereof.
摘要翻译：电致变色薄膜材料的一个示例性实施方案包括锑和一种或多种贱金属的合金; 和/或锑，一种或多种贱金属和锂的合金; 和/或锑，一种或多种贱金属，锂和一种或多种贵金属的合金。电致变色薄膜材料的另一示例性实施方案包括多层叠层，所述多层叠层包括至少一层，包括锑，锑 - 锂合金，锑 - 一种或多种贱金属合金，锑 - 一种或多种贱金属 - 锂合金，锑 - 一种或多种贱金属 - 一种或多种贵金属合金和锑 - 一种或多种贱金属 - 一种或多种贵金属 - 锂合金; 以及包含贱金属和贱金属合金之一的至少一个交替层。一种或多种贱金属包括Co，Mn，Ni，Fe，Zn，Ti，V，Cr，Zr，Nb，Mo，Hf，Ta，W，Cd，Mg，Al，Ga，In，Sn，Pb，和Bi及其合金。

5. 发明授权

US08031389B2 Reflection-controllable electrochromic device using a base metal as a transparent conductor 有权
标题翻译：使用贱金属作为透明导体的反射控制电致变色器件
公开(公告)号：US08031389B2
公开(公告)日：2011-10-04
申请号：US12242917
申请日：2008-10-01
申请人： Zhongchun Wang , Paul P. Nguyen
发明人： Zhongchun Wang , Paul P. Nguyen
IPC分类号： G02F1/153
CPC分类号： G02F1/155 , G02F1/19
摘要： An all-solid-state electrochromic device comprises a transparent base material, and an electrochromic multilayer-stack structure formed on the transparent base material. The electrochromic multilayer-stack structure comprises a first transparent-conductive film formed on the transparent base material, an ion-storage layer formed on the first transparent-conductive film, a solid-electrolyte layer formed on the ion-storage layer, and an electrochromic layer formed on the solid-electrolyte layer. The electrochromic layer comprises a reflection-controllable electrochromic layer. In one exemplary embodiment, the electrochromic layer comprises a reflection-controllable layer that comprises at least one of antimony and an antimony-based alloy. A second transparent-conductive film can be formed on the reflection-controllable layer, or between the reflection-controllable layer and the solid-electrolyte layer. In one exemplary embodiment, the second transparent-conductive layer comprises a base metal and/or a base metal alloy.
摘要翻译：全固体电致变色装置包括透明基材和形成在透明基材上的电致变色多层堆叠结构。电致变色多层堆叠结构包括形成在透明基材上的第一透明导电膜，形成在第一透明导电膜上的离子存储层，形成在离子保存层上的固体电解质层和电致变色层，形成在固体电解质层上。电致变色层包括反射可控电致变色层。在一个示例性实施例中，电致变色层包括反射可控层，其包含锑和锑基合金中的至少一种。第二透明导电膜可以形成在反射可控层上，或反射可控层和固体电解质层之间。在一个示例性实施例中，第二透明导电层包括贱金属和/或贱金属合金。

6. 发明授权

US07715082B2 Electrochromic devices based on lithium insertion 有权
标题翻译：基于锂插入的电致变色器件
公开(公告)号：US07715082B2
公开(公告)日：2010-05-11
申请号：US12165292
申请日：2008-06-30
申请人： Zhongchun Wang , Paul P. Nguyen
发明人： Zhongchun Wang , Paul P. Nguyen
IPC分类号： G02F1/153 , G02F1/01 , G09G3/19 , G09G3/38
CPC分类号： G02F1/1523 , G02F1/153
摘要： An electrochromic switching device comprises a counter electrode, an active electrode and an electrolyte layer disposed between the counter electrode and the active electrode. The active electrode comprises at least one of an oxide, a nitride, an oxynitrides, a partial oxide, a partial nitride and a partial oxynitride of at least one of Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb and I. Upon application of a current to the electrochromic switching device, a compound comprising at least one of the alkali and the alkaline earth metal ion and an element of the active electrode is formed as part of the active electrode.
摘要翻译：电致变色开关装置包括对电极，有源电极和设置在对电极和有源电极之间的电解质层。有源电极包括Sb，Bi，Si，Ge，Sn，Te，N，P，As中的至少一种的氧化物，氮化物，氮氧化物，部分氧化物，部分氮化物和部分氧氮化物中的至少一种 Ga，In，Al，C，Pb和I.当向电致变色开关装置施加电流时，将包含碱金属和碱土金属离子中的至少一种的化合物和有源电极的元素形成为部分的活性电极。

7. 发明申请

US20090323158A1 Electrochromic Devices Based on Lithium Insertion 有权
标题翻译：基于锂插入的电致变色器件
公开(公告)号：US20090323158A1
公开(公告)日：2009-12-31
申请号：US12165292
申请日：2008-06-30
申请人： Zhongchun Wang , Paul P. Nguyen
发明人： Zhongchun Wang , Paul P. Nguyen
IPC分类号： G02F1/153
CPC分类号： G02F1/1523 , G02F1/153
摘要： An electrochromic switching device comprises a counter electrode, an active electrode and an electrolyte layer disposed between the counter electrode and the active electrode. The active electrode comprises at least one of an oxide, a nitride, an oxynitrides, a partial oxide, a partial nitride and a partial oxynitride of at least one of Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb and I. Upon application of a current to the electrochromic switching device, a compound comprising at least one of the alkali and the alkaline earth metal ion and an element of the active electrode is formed as part of the active electrode.
摘要翻译：电致变色开关装置包括对电极，有源电极和设置在对电极和有源电极之间的电解质层。有源电极包括Sb，Bi，Si，Ge，Sn，Te，N，P，As中的至少一种的氧化物，氮化物，氮氧化物，部分氧化物，部分氮化物和部分氧氮化物中的至少一种 Ga，In，Al，C，Pb和I.当向电致变色开关装置施加电流时，将包含碱金属和碱土金属离子中的至少一种的化合物和有源电极的元素形成为部分的活性电极。

8. 发明申请

US20090323161A1 ELECTRICAL CHARACTERISTICS OF ELECTROCHROMIC DEVICES 有权
标题翻译：电光器件的电气特性
公开(公告)号：US20090323161A1
公开(公告)日：2009-12-31
申请号：US12165598
申请日：2008-06-30
申请人： Eugene Anthony Fuss , Roger W. Phillips , Paul P. Nguyen
发明人： Eugene Anthony Fuss , Roger W. Phillips , Paul P. Nguyen
IPC分类号： G02F1/153
CPC分类号： G02F1/1533 , G02F1/155 , G02F2001/1536 , G02F2001/1555 , G02F2201/07
摘要： One exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and an electrochromic layer. Another exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and a counter electrode. Yet another exemplary embodiment of an electrochromic device comprises a type-2 ion-blocking layer formed on a transparent conductive layer as an ion diffusion barrier overlayer. Still another exemplary embodiment of an electrochromic device comprises a transparent conductive layer formed from tantalum nitride.
摘要翻译：电致变色器件的一个示例性实施例包括形成在透明导电层和电致变色层之间的氮化钽 - 氮化物离子阻挡层。电致变色器件的另一示例性实施例包括在透明导电层和对电极之间形成的氮化钽 - 氮化物离子阻挡层。电致变色器件的另一示例性实施例包括形成在作为离子扩散阻挡层的透明导电层上的2型离子阻挡层。电致变色器件的另一示例性实施例包括由氮化钽形成的透明导电层。

9. 发明申请

US20090302403A1 SPIN TORQUE TRANSFER MAGNETIC MEMORY CELL 审中-公开
标题翻译：旋转转矩磁记忆细胞
公开(公告)号：US20090302403A1
公开(公告)日：2009-12-10
申请号：US12176295
申请日：2008-07-18
申请人： Paul P. Nguyen
发明人： Paul P. Nguyen
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161
摘要： A spin-torque magnetic memory element comprises a large magnetic volume, and a thick magnetic layer. The magnetic layer comprises a nearly round shape, a small intrinsic anisotropy and a uniaxial anisotropy that is substantially based on the shape. In one exemplary embodiment, the nearly round shape substantially comprises about a 60 nm by about a 40 nm ellipse shape, and the thick magnetic layer comprises a thickness of about 20 nm to about 100 nm, preferably about 40 nm. In another exemplary embodiment, the thick magnetic layer comprises a first layer of magnetic material that comprises a reasonably high unaxial magnetic anisotropy; and a second layer of magnetic material comprises between about no anisotropy (i.e., 0 anisotropy) and a much lower unaxial magnetic anisotropy than the first layer of magnetic material.
摘要翻译：自旋扭矩磁存储元件包括大的磁体积和厚的磁性层。磁性层包括基本上基于形状的近似圆形，小的本征各向异性和单轴各向异性。在一个示例性实施例中，近似圆形基本上包括约60nm至约40nm的椭圆形状，厚磁层包括约20nm至约100nm，优选约40nm的厚度。在另一示例性实施例中，厚磁性层包括第一层磁性材料，其包含相当高的单轴磁各向异性; 并且第二层磁性材料包括与第一层磁性材料相比几乎不具有各向异性（即，各向异性）和低的单轴磁各向异性。

10. 发明授权

US07531882B2 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization 有权
标题翻译：具有高垂直各向异性和面内平衡磁化的自由层的自旋转移磁性元件
公开(公告)号：US07531882B2
公开(公告)日：2009-05-12
申请号：US11239969
申请日：2005-09-30
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： H01L43/00
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。至少一个自由层具有高的垂直各向异性。高垂直各向异性具有垂直各向异性能，其至少为平面外退磁能的百分之二十。

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