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    • 4. 发明授权
    • Integrated sample and hold circuit with feedback circuit to increase
storage time
    • 集成样本和保留电路与反馈电路增加存储时间
    • US5164616A
    • 1992-11-17
    • US459096
    • 1989-12-29
    • Alan LewisRichard H. BruceWilliam F. Gunning
    • Alan LewisRichard H. BruceWilliam F. Gunning
    • G11C27/02
    • G11C27/024
    • An integrated sample and hold circuit includes a capacitor that is charged through a channel, such as a first input transistor's channel. Feedback circuitry connected to the first transistor's channel leads maintains approximately zero voltage difference between the channel leads to prevent leakage current when the first transitor is turned off. Isolation circuitry, such as a second input transistor, isolates the first transistor from the input voltage while a voltage level is being stored, and the gates of both input transistors can be connected to receive the same store signal. The feedback circuitry can include a follower transistor with its gate connected to the first transistor's output lead and a first channel lead connected to the first transistor's input lead and to load circuitry that maintains current flow through the follower transistor. To ensure that it does not pass current to or from the capacitive element, the follower transistor can be an MOS device or other insulated gate transistor. The follower transistor's other channel lead can be connected to a bias voltage that, together with the current flow, keeps the follower transistor's gate and first channel lead at the stored voltage level. The load circuitry can include a transistor identical to the follower transistor, with one of its channel leads connected to the follower transistor's first channel lead and with its other channel lead and its gate lead connected to a bias voltage that maintains sufficient current flow through the follower transistor. The substrate can be an insulating material such as glass, quartz, sapphire, silicon dioxide, or silicon nitride, and the circuitry can be thin film structures, amorphous silicon, polysilicon, or single crystal devices, so that the only significant leakage path to and from the capacitive element is through the first input transistor's channel.
    • 5. 发明授权
    • Method of detecting the concentration of an analyte
    • 检测分析物浓度的方法
    • US07961326B2
    • 2011-06-14
    • US12195997
    • 2008-08-21
    • Joerg MartiniRichard H. BruceFrancisco E. TorresPeter KieselMichael I. RechtJeffrey N. Roe
    • Joerg MartiniRichard H. BruceFrancisco E. TorresPeter KieselMichael I. RechtJeffrey N. Roe
    • A61B5/00G01J3/46
    • A61B5/1459A61B5/0031A61B5/14532G01N21/33G01N21/359
    • A system and method is provided for detecting concentration of an analyte in a fluid. The method comprises detecting an optical property of a first region of two or more regions in a system, the first region located in a container having a reservoir for one or more modifiers of one or more optical properties of the first region. The movement of the one or more modifiers is responsive to changes in concentration of the analyte. A next step detects an optical property of a second region of the two or more regions in the system, the second region located in a container having a reservoir for one or more modifiers of one or more optical properties of the second region. The movement of the one or more modifiers is responsive to changes in concentration of a compound, where the compound is something other than the analyte. The detected optical property of the first region and the detected optical property of the second region are used in embodiments to separate the effect of the analyte on the detected optical property of the first region from the effect of the compound, where the compound is an interfering compound.
    • 提供了用于检测流体中分析物的浓度的系统和方法。 该方法包括检测系统中两个或更多个区域的第一区域的光学性质,位于容器中的第一区域具有用于一个或多个第一区域的一个或多个光学特性的改性剂的储存器。 一种或多种改性剂的运动响应于分析物浓度的变化。 下一步骤检测系统中两个或更多个区域的第二区域的光学性质,位于容器中的第二区域具有用于一个或多个第二区域的一个或多个光学特性的改性剂的储存器。 一种或多种改性剂的运动响应化合物浓度的变化,其中化合物是除分析物以外的物质。 检测到的第一区域的光学特性和第二区域的检测光学特性用于实施例中以将分析物对第一区域的检测光学性质的影响与化合物的影响分开,其中化合物是干扰 复合。