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1. 发明授权

US08596336B2 Substrate support temperature control 有权
标题翻译：基板支持温度控制
公开(公告)号：US08596336B2
公开(公告)日：2013-12-03
申请号：US12132101
申请日：2008-06-03
申请人： Richard Fovell , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
发明人： Richard Fovell , Paul Brillhart , Sang In Yi , Anisul H. Khan , Jivko Dinev , Shane Nevil
IPC分类号： F22B37/00 , G05D9/00 , B05C11/00
CPC分类号： F28D15/00 , F28D2021/0077 , H01L21/67109 , H01L21/67248
摘要： Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.
摘要翻译：用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。第一和第二温度可以相同或不同。可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

2. 发明申请

US20130240144A1 FAST RESPONSE FLUID TEMPERATURE CONTROL SYSTEM 审中-公开
标题翻译：快速响应流体温度控制系统
公开(公告)号：US20130240144A1
公开(公告)日：2013-09-19
申请号：US13418574
申请日：2012-03-13
申请人： Douglas A. Buchberger , Shane Nevil , Kartik Ramaswamy , Kenneth Collins , Richard Fovell
发明人： Douglas A. Buchberger , Shane Nevil , Kartik Ramaswamy , Kenneth Collins , Richard Fovell
IPC分类号： F28F27/02 , F28F27/00 , B05C11/00 , F28D15/00
CPC分类号： H01J37/32522 , G05D23/1393 , H01J37/32724
摘要： A plasma processing apparatus and method to control a temperature of a chamber component therein. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid communication with a heat sink or heat source, and a local heat transfer fluid loop placing the chamber component in fluid communication with a secondary side of the first heat exchanger. The local loop may be of significantly smaller fluid volume than the remote loop(s) and circulated to provide thermal load of uniform temperature. Temperature control of heat transfer fluid in the local loop and temperature control of the chamber component may be implemented with a cascaded control algorithm.
摘要翻译：一种用于控制室内部件的温度的等离子体处理装置和方法。处理室可以包括温度控制室部件和至少一个远程传热流体回路，其包括具有与散热器或热源流体连通的初级侧的第一热交换器和局部传热流体回路，其将腔室部件与第一热交换器的次级侧流体连通。局部回路的流体体积可能远小于远程回路，并循环以提供均匀温度的热负荷。局部回路中传热流体的温度控制和腔室部件的温度控制可以用级联控制算法实现。

3. 发明申请

US20070097580A1 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
标题翻译：在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法
公开(公告)号：US20070097580A1
公开(公告)日：2007-05-03
申请号：US11410782
申请日：2006-04-24
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H02H5/04
CPC分类号： H01L21/67109
摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.
摘要翻译：在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂，工件支撑件的内部流动通道构成制冷回路的蒸发器。该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

4. 发明申请

US20070091540A1 Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control 审中-公开
标题翻译：使用多区域前馈热控制在等离子体反应器中处理工件的方法
公开(公告)号：US20070091540A1
公开(公告)日：2007-04-26
申请号：US11409184
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes inner and outer zone evaporators inside respective inner and outer zones of the electrostatic chuck, while pressurizing inner and outer zones of a workpiece-to-chuck interface with a thermally conductive gas, and sensing conditions in the chamber including inner and outer zone temperatures near the workpiece. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using thermal modeling to estimate respective changes in thermal conditions of the coolant in the inner and outer zone evaporators, respectively, that would hold temperatures measured in the inner and outer electrostatic chuck zones, respectively, nearly constant by compensating for the next scheduled change in RF heat load, and making the respective changes in thermal conditions of the coolant in inner and outer zone evaporators prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
摘要翻译：一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过制冷回路，所述制冷回路在静电吸盘的内部和外部区域内包括内部和外部区域蒸发器同时用导热气体对工件 - 卡盘界面的内部和外部区域加压，以及感测室中包括工件附近的内部和外部区域温度的条件。该方法还包括获得工件上的RF热负荷的下一个预定的改变，并且使用热模型来分别估计在内部和外部区域蒸发器中的冷却剂的热条件的各自变化，其将保持在内部和外部测量的温度通过补偿下一个预定的RF热负荷变化，分别使静电吸盘区域几乎恒定，并且在下一次预定的改变时间之前通过头部开始使得内部和外部区域蒸发器中的冷却剂的热条件的各自变化与通过静电卡盘的热传播延迟有关。

5. 发明申请

US20070091538A1 Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops 有权
标题翻译：具有晶片背面热循环的等离子体反应器，两相内部基座热回路和控制两个回路的控制处理器
公开(公告)号：US20070091538A1
公开(公告)日：2007-04-26
申请号：US11408567
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在腔室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于将选定压力下的导热气体施加到每次形成的工件表面界面中工件被保持在表面上，并且蒸发器位于静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电吸盘中的温度传感器，能够模拟蒸发器和表面之间的热传递的热模型，其基于来自温度传感器和耦合到热模型的敏捷控制处理器的测量，并控制背侧气体压力源响应于来自所选压力的变化模型的预测，其将使由传感器测量的温度更接近所需温度。

6. 发明申请

US20070091537A1 Method for agile workpiece temperature control in a plasma reactor using a thermal model 有权
标题翻译：使用热模型的等离子体反应器中敏捷工件温度控制的方法
公开(公告)号：US20070091537A1
公开(公告)日：2007-04-26
申请号：US11408558
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.
摘要翻译：在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力从热模型。

7. 发明申请

US20070089834A1 Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
标题翻译：具有多区域热控制前馈控制装置的等离子体反应器
公开(公告)号：US20070089834A1
公开(公告)日：2007-04-26
申请号：US11408559
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和外部膨胀阀的制冷回路，用于控制冷却剂通过内部和外部蒸发器。反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和外部温度传感器。耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度传感器分别更接近所需的温度。

8. 发明申请

US20070081295A1 Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution 有权
标题翻译：具有均匀温度分布的冷却/加热晶片支架的电容耦合等离子体反应器
公开(公告)号：US20070081295A1
公开(公告)日：2007-04-12
申请号：US11409292
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67069 , H01L21/67248 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.
摘要翻译：用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路，制冷剂入口和制冷剂出口。优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。优选地，蒸发器内的制冷剂在气相和液相之间分配。结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。该特征改善了静电卡盘的直径上的温度分布的均匀性。

9. 发明申请

US20070081294A1 Capacitively coupled plasma reactor having very agile wafer temperature control 有权
标题翻译：具有非常敏捷的晶片温度控制的电容耦合等离子体反应器
公开(公告)号：US20070081294A1
公开(公告)日：2007-04-12
申请号：US11408333
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
摘要翻译：用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制气体阀响应于温度探头的输出与所需温度之间的差异。

10. 发明申请

US20070091541A1 Method of processing a workpiece in a plasma reactor using feed forward thermal control 审中-公开
标题翻译：使用前馈热控制在等离子体反应器中处理工件的方法
公开(公告)号：US20070091541A1
公开(公告)日：2007-04-26
申请号：US11409326
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using the model to estimate a change in thermal conditions of the coolant in the evaporator that would hold the temperature nearly constant by compensating for the next scheduled change in RF heat load, and making the change in thermal conditions of the coolant in the evaporator prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
摘要翻译：一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过包括静电卡盘内的蒸发器的制冷回路，同时对工件 - 卡盘与导热气体接触，基于条件，感测室内的条件，包括工件附近的温度，并模拟卡盘热模型中通过静电卡盘的热流。该方法还包括获得在工件上的RF热负荷的下一个预定的改变，并且使用该模型来估计蒸发器中的冷却剂的热条件的变化，该变化将通过补偿下一个预定的RF热变化来保持温度几乎恒定在通过静电卡盘的热传播延迟的头开始的下一次预定改变之前，在蒸发器中的冷却剂的热条件的变化。

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