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    • 3. 发明申请
    • Plasma reactor with a multiple zone thermal control feed forward control apparatus
    • 具有多区域热控制前馈控制装置的等离子体反应器
    • US20070089834A1
    • 2007-04-26
    • US11408559
    • 2006-04-21
    • Paul BrillhartRichard FovellHamid TavassoliDouglas BuchbergerDouglas BurnsKallol BeraDaniel Hoffman
    • Paul BrillhartRichard FovellHamid TavassoliDouglas BuchbergerDouglas BurnsKallol BeraDaniel Hoffman
    • C23F1/00C23C16/00
    • H01L21/67248F25B49/02F25B2400/0401F25B2400/0403F25B2400/0411F25B2700/21174F25B2700/21175H01J37/32091H01J37/32183H01J37/32724H01J2237/2001H01L21/67069H01L21/67109H01L21/6831H05H2001/4682
    • A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
    • 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源,用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面,以及静电卡盘的内部和外部区域内的内部和外部蒸发器,以及具有各自的内部和外部膨胀阀的制冷回路,用于控制冷却剂通过内部 和外部蒸发器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型,其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源,该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。
    • 5. 发明申请
    • Capacitively coupled plasma reactor having very agile wafer temperature control
    • 具有非常敏捷的晶片温度控制的电容耦合等离子体反应器
    • US20070081294A1
    • 2007-04-12
    • US11408333
    • 2006-04-21
    • Douglas BuchbergerPaul BrillhartRichard FovellHamid TavassoliDouglas BurnsKallol BeraDaniel Hoffman
    • Douglas BuchbergerPaul BrillhartRichard FovellHamid TavassoliDouglas BurnsKallol BeraDaniel Hoffman
    • H01T23/00
    • H01L21/67248H01L21/67069H01L21/67109H01L21/6831
    • A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
    • 用于加工工件的等离子体反应器包括反应室,腔室内的静电吸盘具有用于支撑工件的顶表面,并且在顶表面上具有凹陷,每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置,RF等离子体偏置功率发生器,其被耦合以向静电卡盘施加RF功率,导热气体的加压气体供应,将加压气体供应连接到 所述凹槽有助于用导热气体填充通道,用于在工件的背面与静电卡盘之间传热,其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路,其包括(a)静电卡盘中的温度探针,和(b)耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器,控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。