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1. 发明授权

US06777267B2 Die singulation using deep silicon etching 失效
公开(公告)号：US06777267B2
公开(公告)日：2004-08-17
申请号：US10286729
申请日：2002-11-01
申请人： Richard C. Ruby , Frank S. Geefay , Cheol Hyun Han , Qing Gan , Andrew T. Barfknecht
发明人： Richard C. Ruby , Frank S. Geefay , Cheol Hyun Han , Qing Gan , Andrew T. Barfknecht
IPC分类号： H01L2144
CPC分类号： H01L21/6836 , H01L21/50 , H01L21/78 , H01L2221/68327
摘要： A method for separating dies on a wafer includes etching channels around the dies on a first side of the wafer, mounting the first side of the wafer to a quartz plate with an UV adhesive, and grinding a second side of the wafer until the channels are exposed on the second side of the wafer. At this point, the dies are separated but held together by the UV adhesive on the quartz plate. The method further includes mounting a second side of the wafer to a tack tape, exposing UV radiation through the quartz plate to the UV adhesive. At this point, the UV adhesive looses its adhesion so the dies are held together by the tack tape. The method further includes dismounting the quartz plate from the first side of the wafer and picking up the individual dies from the tack tape.

2. 发明授权

US06777263B1 Film deposition to enhance sealing yield of microcap wafer-level package with vias 失效
标题翻译：薄膜沉积，以提高具有通孔的微型晶圆级封装的密封产量
公开(公告)号：US06777263B1
公开(公告)日：2004-08-17
申请号：US10647040
申请日：2003-08-21
申请人： Qing Gan , Richard C. Ruby , Frank S. Geefay , Andrew T. Barfknecht
发明人： Qing Gan , Richard C. Ruby , Frank S. Geefay , Andrew T. Barfknecht
IPC分类号： H01L2144
CPC分类号： B81C1/00269 , H01L21/50
摘要： A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.
摘要翻译：一种用于形成晶片封装的方法，包括形成管芯结构，其中管芯结构包括第一晶片，安装在第一晶片上的器件，安装在第一晶片顶部的第二晶片，具有围绕器件的第一密封环，第二密封环绕通道接触。所述方法还包括在所述第二晶片周围形成沟槽，围绕所述第一密封环，用密封剂填充所述沟槽和所述通孔接触，图案化所述第二晶片的顶侧以除去所述过量的密封剂并露出所述第二晶片的接触垫通过接触，并且围绕第一密封环分开模具。

3. 发明授权

US06763702B2 Method and apparatus for hermeticity determination and leak detection in semiconductor packaging 有权
标题翻译：用于半导体封装中的气密性测定和泄漏检测的方法和装置
公开(公告)号：US06763702B2
公开(公告)日：2004-07-20
申请号：US10325356
申请日：2002-12-19
申请人： Allen Chien , Frank S Geefay , Cheol Hyun Han , Qing Gan
发明人： Allen Chien , Frank S Geefay , Cheol Hyun Han , Qing Gan
IPC分类号： G01M316
CPC分类号： G01M3/226
摘要： A method and apparatus for determining the hermeticity of a semiconductor package is disclosed. Gas is introduced into the semiconductor package during packaging. Vacuum suction is then applied to the package. If the package has any leaks, the gas within will escape. The package is next scanned using a spectrometer. If the spectrometer does not detect any gas within the package cavity, the package is not hermetically sealed. In an alternate embodiment, the device is packaged first, and then immersed in a pressurized liquid. If the package has a leak, the pressure on the liquid will force liquid into the package cavity. The cavity of a properly sealed package will remain empty and dry. The package is scanned using a spectrometer. If the spectrometer detects liquid within the package, the package is not hermetically sealed.
摘要翻译：公开了一种用于确定半导体封装的气密性的方法和装置。在包装过程中将气体引入半导体封装。然后将真空吸力施加到包装上。如果包装有任何泄漏，内部的气体将会逸出。然后使用光谱仪扫描包装。如果光谱仪没有检测到封装腔内的任何气体，封装件不会被密封。在替代实施例中，装置首先包装，然后浸入加压液体中。如果包装有泄漏，液体上的压力将迫使液体进入包装腔。正确密封的包装的空腔将保持空且干燥。使用光谱仪扫描包装。如果光谱仪检测到包装内的液体，则封装不是密封的。

4. 发明授权

US06787897B2 Wafer-level package with silicon gasket 有权
公开(公告)号：US06787897B2
公开(公告)日：2004-09-07
申请号：US10028058
申请日：2001-12-20
申请人： Frank S Geefay , Qing Gan , Ann Mattos , Domingo A Figueredo
发明人： Frank S Geefay , Qing Gan , Ann Mattos , Domingo A Figueredo
IPC分类号： H01L2348
CPC分类号： B81B7/0077 , H01L21/50 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H01L2924/00
摘要： A gasket encloses a hermetically sealed environment between a cap wafer and a base wafer. The gasket is bonded to the base wafer using bonding material. The bonding material can be one or more of many substances that exhibit acceptable adhesion, sealing, and other properties that ensure a hermetically sealed environment. The gasket is carved out from the cap wafer material itself. The cap wafer is typically made of extremely strong and rigid material such as silicon. Since the gasket is made from the cap wafer, the gasket itself is also extremely strong and rigid.

5. 发明授权

US06979597B2 Wafer-level package with silicon gasket 有权
标题翻译：晶圆级封装带硅垫片
公开(公告)号：US06979597B2
公开(公告)日：2005-12-27
申请号：US10615672
申请日：2003-07-08
申请人： Frank S Geefay , Qing Gan , Ann Mattos , Domingo A Figueredo
发明人： Frank S Geefay , Qing Gan , Ann Mattos , Domingo A Figueredo
IPC分类号： H01L23/02 , B81B7/00 , H01L21/50 , H01L23/10 , H01L21/44 , H01L21/30 , H01L21/46 , H01L21/48
CPC分类号： B81B7/0077 , H01L21/50 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H01L2924/00
摘要： A gasket encloses a hermetically sealed environment between a cap wafer and a base wafer. The gasket is bonded to the base wafer using bonding material. The bonding material can be one or more of many substances that exhibit acceptable adhesion, sealing, and other properties that ensure a hermetically sealed environment. The gasket is carved out from the cap wafer material itself. The cap wafer is typically made of extremely strong and rigid material such as silicon. Since the gasket is made from the cap wafer, the gasket itself is also extremely strong and rigid.
摘要翻译：垫圈在盖晶片和基底晶片之间包围密封的环境。垫圈使用接合材料结合到基底晶片。接合材料可以是显示可接受的粘合性，密封性和确保密封环境的其它性质的许多物质中的一种或多种。垫片从盖片材料本身雕刻出来。盖晶片通常由非常坚固和刚性的材料制成，例如硅。由于垫片由盖片制成，所以垫片本身也非常坚固和刚性。

6. 发明授权

US06903012B2 Sloped via contacts 失效
标题翻译：通过联系人倾斜
公开(公告)号：US06903012B2
公开(公告)日：2005-06-07
申请号：US10826803
申请日：2004-04-15
申请人： Frank S Geefay , Qing Gan
发明人： Frank S Geefay , Qing Gan
IPC分类号： H01L21/768 , H01L23/48 , H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2924/09701 , Y10S438/928
摘要： A sloped via contact is used to connect a contact on the front side of a wafer to a contact on the back side of the wafer. The walls of a small (less than 50-80 microns wide) via have typically been difficult to coat with metal. The present invention forms a small via with sloped walls, allowing easy access to the inside walls of the via for metal sputtering or plating. The small via can be formed using a dry etch process such as the well-known deep reactive ion etching (DRIE) process. Using any isotropic plasma etch process, the walls of the via are further etched from the wafer backside to create sloped walls in the via. The via is then coated with metal to make it conductive.
摘要翻译：使用倾斜的通孔触点将晶片正面上的触点连接到晶片背面的触点。小（50-80微米宽）通孔的壁通常难以用金属涂覆。本发明形成具有倾斜壁的小通孔，允许容易地进入用于金属溅射或电镀的通孔的内壁。可以使用诸如公知的深反应离子蚀刻（DRIE）工艺的干蚀刻工艺来形成小通孔。使用任何各向同性等离子体蚀刻工艺，从晶片背面进一步蚀刻通孔的壁，以在通孔中产生倾斜的壁。然后用金属涂覆通孔以使其导电。

7. 发明授权

US07629201B2 Method for fabricating a wafer level package with device wafer and passive component integration 有权
标题翻译：用于制造具有器件晶片和无源部件集成的晶片级封装的方法
公开(公告)号：US07629201B2
公开(公告)日：2009-12-08
申请号：US11899926
申请日：2007-09-07
申请人： Qing Gan , Robert W. Warren , Anthony J. Lobianco , Steve X. Liang
发明人： Qing Gan , Robert W. Warren , Anthony J. Lobianco , Steve X. Liang
IPC分类号： H01L21/44 , H01L21/48
CPC分类号： H01L23/49822 , B81C1/00269 , H01L21/4857 , H01L21/6835 , H01L23/49816 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2221/68345 , H01L2224/0401 , H01L2224/04026 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2224/1146 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13144 , H01L2224/16235 , H01L2224/2746 , H01L2224/29011 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32235 , H01L2224/73103 , H01L2224/81005 , H01L2224/81192 , H01L2224/81801 , H01L2224/83005 , H01L2224/83192 , H01L2224/9211 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/14 , H01L2924/1461 , H01L2924/15151 , H01L2924/15159 , H01L2924/15184 , H01L2924/15311 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2224/81 , H01L2224/83 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： According to an exemplary embodiment, a wafer level package includes a device wafer including at least one device wafer contact pad and a device, and where the at least one device wafer contact pad is electrically connected to the device. The wafer level package includes a first polymer layer situated over the device wafer. The wafer level package includes at least one passive component situated over the first polymer layer and having a first terminal and a second terminal. The first terminal of the at least one passive component is electrically connected to the at least one device wafer contact pad. The wafer level package includes a second polymer layer situated over the at least one passive component. The wafer level package includes at least one polymer layer contact pad situated over the second polymer layer and electrically connected to the second terminal of the at least one passive component.
摘要翻译：根据示例性实施例，晶片级封装包括包括至少一个器件晶片接触焊盘和器件的器件晶片，并且其中所述至少一个器件晶片接触焊盘电连接到所述器件。晶片级封装包括位于器件晶片上方的第一聚合物层。晶片级封装包括位于第一聚合物层之上并具有第一端子和第二端子的至少一个无源部件。所述至少一个无源部件的第一端子电连接到所述至少一个器件晶片接触焊盘。晶片级封装包括位于至少一个无源部件上的第二聚合物层。晶片级封装包括位于第二聚合物层之上并电连接至至少一个无源元件的第二端子的至少一个聚合物层接触焊盘。

8. 发明申请

US20060220173A1 Wafer level package including a device wafer integrated with a passive component 有权
公开(公告)号：US20060220173A1
公开(公告)日：2006-10-05
申请号：US11097646
申请日：2005-04-01
申请人： Qing Gan , Robert Warren , Anthony Lobianco , Steve Liang
发明人： Qing Gan , Robert Warren , Anthony Lobianco , Steve Liang
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L23/49822 , B81C1/00269 , H01L21/4857 , H01L21/6835 , H01L23/49816 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2221/68345 , H01L2224/0401 , H01L2224/04026 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2224/1146 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13144 , H01L2224/16235 , H01L2224/2746 , H01L2224/29011 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32235 , H01L2224/73103 , H01L2224/81005 , H01L2224/81192 , H01L2224/81801 , H01L2224/83005 , H01L2224/83192 , H01L2224/9211 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/14 , H01L2924/1461 , H01L2924/15151 , H01L2924/15159 , H01L2924/15184 , H01L2924/15311 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2224/81 , H01L2224/83 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： According to an exemplary embodiment, a wafer level package includes a device wafer including at least one device wafer contact pad and a device, and where the at least one device wafer contact pad is electrically connected to the device. The wafer level package includes a first polymer layer situated over the device wafer. The wafer level package includes at least one passive component situated over the first polymer layer and having a first terminal and a second terminal. The first terminal of the at least one passive component is electrically connected to the at least one device wafer contact pad. The wafer level package includes a second polymer layer situated over the at least one passive component. The wafer level package includes at least one polymer layer contact pad situated over the second polymer layer and electrically connected to the second terminal of the at least one passive component.

9. 发明授权

US07576426B2 Wafer level package including a device wafer integrated with a passive component 有权
标题翻译：晶圆级封装，包括与无源元件集成的器件晶片
公开(公告)号：US07576426B2
公开(公告)日：2009-08-18
申请号：US11097646
申请日：2005-04-01
申请人： Qing Gan , Robert W. Warren , Anthony J. Lobianco , Steve X. Liang
发明人： Qing Gan , Robert W. Warren , Anthony J. Lobianco , Steve X. Liang
IPC分类号： H01L23/10 , H01L23/48
CPC分类号： H01L23/49822 , B81C1/00269 , H01L21/4857 , H01L21/6835 , H01L23/49816 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2221/68345 , H01L2224/0401 , H01L2224/04026 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2224/1146 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13144 , H01L2224/16235 , H01L2224/2746 , H01L2224/29011 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32235 , H01L2224/73103 , H01L2224/81005 , H01L2224/81192 , H01L2224/81801 , H01L2224/83005 , H01L2224/83192 , H01L2224/9211 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/14 , H01L2924/1461 , H01L2924/15151 , H01L2924/15159 , H01L2924/15184 , H01L2924/15311 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2224/81 , H01L2224/83 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： According to an exemplary embodiment, a wafer level package includes a device wafer including at least one device wafer contact pad and a device, and where the at least one device wafer contact pad is electrically connected to the device. The wafer level package includes a first polymer layer situated over the device wafer. The wafer level package includes at least one passive component situated over the first polymer layer and having a first terminal and a second terminal. The first terminal of the at least one passive component is electrically connected to the at least one device wafer contact pad. The wafer level package includes a second polymer layer situated over the at least one passive component. The wafer level package includes at least one polymer layer contact pad situated over the second polymer layer and electrically connected to the second terminal of the at least one passive component.
摘要翻译：根据示例性实施例，晶片级封装包括包括至少一个器件晶片接触焊盘和器件的器件晶片，并且其中所述至少一个器件晶片接触焊盘电连接到所述器件。晶片级封装包括位于器件晶片上方的第一聚合物层。晶片级封装包括位于第一聚合物层之上并具有第一端子和第二端子的至少一个无源部件。所述至少一个无源部件的第一端子电连接到所述至少一个器件晶片接触焊盘。晶片级封装包括位于至少一个无源部件上的第二聚合物层。晶片级封装包括位于第二聚合物层之上并电连接至至少一个无源元件的第二端子的至少一个聚合物层接触焊盘。

10. 发明申请

US20060211233A1 Method for fabricating a wafer level package having through wafer vias for external package connectivity and related structure 审中-公开
标题翻译：用于制造具有通过用于外部封装连接和相关结构的晶片通孔的晶片级封装的方法
公开(公告)号：US20060211233A1
公开(公告)日：2006-09-21
申请号：US11085968
申请日：2005-03-21
申请人： Qing Gan , Anthony Lobianco , Robert Warren
发明人： Qing Gan , Anthony Lobianco , Robert Warren
IPC分类号： H01L21/44
CPC分类号： B81C1/00301 , B81B2207/095 , H01L23/10 , H01L23/3114 , H01L2924/0002 , H01L2924/01079 , H01L2924/00
摘要： According to an exemplary embodiment, a method for fabricating a wafer level package includes forming a polymer layer on a device wafer, where the device wafer includes at least one device wafer contact pad and a device, and where the at least one device wafer contact pad is electrically connected to the device. The method further includes bonding a protective wafer to the device wafer. The method further includes forming at least one via in the protective wafer, where the at least one via extends through the protective wafer and is situated over the at least one device wafer contact pad. The method further includes forming at least one protective wafer contact pad on the protective wafer, where the at least one protective wafer contact pad is situated over the at least one via and electrically connected to the at least one device wafer contact pad.
摘要翻译：根据示例性实施例，用于制造晶片级封装的方法包括在器件晶片上形成聚合物层，其中器件晶片包括至少一个器件晶片接触焊盘和器件，并且其中至少一个器件晶片接触焊盘电连接到设备。该方法还包括将保护晶片接合到器件晶片。该方法还包括在保护晶片中形成至少一个通孔，其中至少一个通孔延伸穿过保护晶片并且位于至少一个器件晶片接触焊盘上方。所述方法还包括在所述保护晶片上形成至少一个保护性晶片接触焊盘，其中所述至少一个保护性晶片接触焊盘位于所述至少一个通孔上并电连接至所述至少一个器件晶片接触焊盘。

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